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1.发明授权Electrostatically tunable optical device and optical interconnect for processors 失效用于处理器的静电可调谐光学器件和光学互连
公开(公告)号：US5291502A
公开(公告)日：1994-03-01
申请号：US939903
申请日：1992-09-04
CPC分类号： G02B26/0816 , G02B26/001 , H01S5/18366 , G01N21/39 , H01S5/0207 , H01S5/0264 , H01S5/0687 , H01S5/18308 , H01S5/18361 , H01S5/18375 , H01S5/18388 , H01S5/2063
摘要： A microlaser is described which is electrostatically tunable. One of the reflectors includes at least one reflecting part whose distance from the other reflector can be adjusted to change the effective optical distance between the reflectors and thus tune the optical frequency at which lasing occurs. The disclosure brings out that the inventive aspect is also applicable to other optical devices having reflectors defining a Fabry-Perot cavity. An optical interconnecting scheme for processors using the microlaser is also described.
摘要翻译： 描述了可以静电调节的微型激光器。 其中一个反射器包括至少一个反射部分，其距离另一个反射器的距离可以被调节以改变反射器之间的有效光学距离，并且因此调谐发生激光的光学频率。 本公开内容提出，本发明的方面也可应用于具有限定法布里 - 珀罗腔的反射器的其它光学装置。 还描述了使用微型激光器的处理器的光学互连方案。
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公开(公告)号：US5222071A
公开(公告)日：1993-06-22
申请号：US660203
申请日：1991-02-21
CPC分类号： B82Y20/00 , G02F1/292 , G02F1/017 , G02F2203/22 , G02F2203/24
摘要： The invention relates to an apparatus including a semiconductor grating whose optical properties can be changed electrically in order to steer a diffracted laser beam with no moving parts. Lithographically defined portions, stripes or areas formed in a semiconductor quantum well region used in association with selectable voltage supply means enable control of the optical characteristics of the grating. The optical properties of the semiconductor quantum well region vary in response to variations in voltage applied to the areas which in turn change the transmissivity or reflectivity of the areas. By selectively applying voltages, the diffraction pattern obtained in the far-field from illuminating the areas is thus controlled and beam steering results. By using a two-dimensional array of areas, or alternatively using two such one dimensional arrays, beam steering in two dimensions may be accomplished. Using a Fabry-Perot cavity allows large reflectivity changes to occur from the absorption changes, and another external Fabry-Perot cavity increases the optical power steered into the diffracted modes. Electronically addressing a large number of areas can be achieved using a number of standard methods.
摘要翻译： 本发明涉及一种包括半导体光栅的装置，其光学特性可以电性地改变，以便转向没有运动部件的衍射激光束。 在与可选择的电压供应装置相关联使用的半导体量子阱区域中形成的光刻限定的部分，条纹或区域使得能够控制光栅的光学特性。 半导体量子阱区的光学特性响应于施加到区域的电压的变化而变化，这些区域又改变了区域的透射率或反射率。 通过选择性地施加电压，由此控制在远场中获得的衍射图案照射该区域，并且导致光束转向。 通过使用二维阵列的区域，或者可选地使用两个这样的一维阵列，可以实现二维波束转向。 使用法布里 - 珀罗腔可以从吸收变化发生较大的反射率变化，而另一个外部法布里 - 珀罗腔增加转向衍射模式的光功率。 使用多种标准方法可以实现电子寻址大量的领域。
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公开(公告)号：US07515776B1
公开(公告)日：2009-04-07
申请号：US11524035
申请日：2006-09-19
CPC分类号： G02F1/017 , B82Y20/00 , G02F1/0147 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators including such SiGe quantum wells can be operated at temperatures other than room temperature. Such temperature control is preferred for providing optical modulators that operate in the telecommunication C band (˜1530 nm to ˜1565 nm).
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。 满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。 在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。 量子阱屏障组合物可以具有或不具有凯恩样条带。 包括这种SiGe量子阱的光学调制器可以在室温以外的温度下操作。 这样的温度控制优选用于提供在通信C带（〜1530nm至〜〜〜〜6565nm）内工作的光调制器。
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公开(公告)号：US4285000A
公开(公告)日：1981-08-18
申请号：US19807
申请日：1979-03-12
IPC分类号： H01L29/765 , H01L29/78 , G11C19/28 , H01L29/06 , H01L29/56
CPC分类号： H01L29/765
摘要： A charge coupled device has a semi-insulating semiconductor for a substrate. Resistivity of the semiconductor is at least 10.sup.6 ohm cm. A semi-conductive layer is grown epitaxially or is implanted on the substrate to form a thin, active, charge transport layer. A row of parallel, closely spaced gates on the charge transport layer provides individual storage wells in the charge transport layer. In a preferred embodiment, ohmic contacts adjacent the first and last gates in the row of gates provide a means for injecting a signal into the charge transport layer and a means for detecting the signal. Preferably, the substrate is semi-insulating GaAs and the gates are Schottky barrier gates.
摘要翻译： 电荷耦合器件具有用于衬底的半绝缘半导体。 半导体的电阻率至少为106欧姆厘米。 半导体层外延生长或植入到衬底上以形成薄的，有活性的电荷传输层。 在电荷传输层上的一排平行的，紧密间隔的栅极提供电荷输送层中的各个存储阱。 在优选实施例中，邻近栅极行中的第一和第二栅极的欧姆接触提供用于将信号注入电荷传输层的装置和用于检测信号的装置。 优选地，衬底是半绝缘GaAs，栅极是肖特基势垒栅极。
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5.发明授权Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication 失效使用具有降低的相分离的III族氮化物材料体系和制造方法的半导体结构公开(公告)号：US07391062B2
公开(公告)日：2008-06-24
申请号：US11073872
申请日：2005-03-08
IPC分类号： H01L29/06
CPC分类号： H01L29/201 , B82Y20/00 , H01L31/1035 , H01L33/32 , H01S5/22 , H01S5/32 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BInGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BInGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BInGaAlN material system of an opposite conduction type formed substantially without phase separation.
摘要翻译： 公开了用于半导体结构（包括激光二极管，晶体管和光电检测器）的III族 - 氮化物四元和五元材料体系和方法，其减少或消除相分离并提供增加的发射效率。 在一个示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的BInGaAlN材料体系的第一三元，四元或五元素材料层，以及基本上不相分离的BInGaAlN材料体系的四元或五元素材料活性层，以及 使用基本上不相分离形成的相反导电类型的BInGaAlN材料体系的第三三元，四价或五元素材料层。
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6.发明授权Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL) 失效单片集成锁模垂直腔面发射激光器（VCSEL）公开(公告)号：US06628695B1
公开(公告)日：2003-09-30
申请号：US10175659
申请日：2002-06-19
申请人： Rafael I. Aldaz , Gordon A. Keeler , Vijit A. Sabnis , James S. Harris, Jr. , David A.B. Miller
发明人： Rafael I. Aldaz , Gordon A. Keeler , Vijit A. Sabnis , James S. Harris, Jr. , David A.B. Miller
IPC分类号： H01S308
CPC分类号： H01S5/18388 , H01S5/02 , H01S5/0207 , H01S5/0601 , H01S5/0657 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358
摘要： A monolithically integrated, mode-locked vertical cavity surface emitting laser (VCSEL) for emitting ultrafast high power pulses. The resonator of the VCSEL has an active medium for emitting a radiation, a spacer for extending the resonator to a length L at which a significant number N of axial modes of the radiation are supported in the resonator and a saturable absorber for mode-locking. The VCSEL has an arrangement for stabilizing the resonator such that one transverse mode of the radiation is supported within the resonator. The VCSEL also has an arrangement for compensating dispersion of the radiation occurring in the resonator.
摘要翻译： 用于发射超高功率脉冲的单片集成的锁模垂直腔表面发射激光器（VCSEL）。 VCSEL的谐振器具有用于发射辐射的有源介质，用于将谐振器延伸到长度L的间隔物，在该长度L处辐射的大量N个轴向模式被支撑在谐振器中，以及可饱和吸收器用于锁模。 VCSEL具有用于稳定谐振器的布置，使得辐射的一个横向模式被支撑在谐振器内。 VCSEL还具有用于补偿在谐振器中发生的辐射的色散的布置。
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7.发明授权Optical imaging system having an illumination source between object and image 有权光学成像系统具有物体和图像之间的照明源公开(公告)号：US07504613B2
公开(公告)日：2009-03-17
申请号：US11078648
申请日：2005-03-11
CPC分类号： G02B3/0056 , G02B3/00 , G02B21/0008 , G02B21/06 , G02B21/364
摘要： An optical imaging system having an optical source located between the object being imaged and the sensor is provided. Such positioning of the source enables provision of compact optical imaging systems. In particular, such systems can have image widths significantly larger than the object to sensor separation. The arrangement of source, imaging assembly and sensor is such that an image of the source is not formed at the sensor. Therefore, the effect of this source positioning on the image of the object at the sensor is a reduction of intensity, as opposed to more objectionable imaging artifacts, such as spurious shadows and/or bright spots. Thus compact optical imaging systems having good image quality are provided, which enables high-fidelity imaging of object to sensor for a wide variety of applications.
摘要翻译： 提供了一种光学成像系统，其具有位于被成像对象和传感器之间的光源。 源的这种定位使得能够提供紧凑的光学成像系统。 特别地，这样的系统可以具有显着大于传感器分离对象的图像宽度。 源，成像组件和传感器的布置使得源不会在传感器处形成图像。 因此，与诸如假阴影和/或亮点的更令人反感的成像伪像相反，该源定位对传感器处的物体的图像的影响是强度的降低。 因此，提供了具有良好图像质量的紧凑型光学成像系统，其能够实现用于各种应用的物体对传感器的高保真成像。
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8.发明授权Semiconductor structures using a group III-nitride quaternary material system with reduced phase separation and method of fabrication 有权使用具有降低的相分离的III族氮化物四元体系的半导体结构和制造方法公开(公告)号：US06472679B1
公开(公告)日：2002-10-29
申请号：US09476017
申请日：1999-12-31
IPC分类号： H01L2906
CPC分类号： H01L33/32
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduces or eliminates phase separation and provides increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using an InGaAlNP layer of a first conduction type formed substantially without phase separation, a quaternary or pentenary material active layer using an InGaAlNP active layer substantially without phase separation, and a third ternary, quaternary or pentenary InGaAlNP material layer of an opposite conduction type formed substantially without phase separation.
摘要翻译： III族氮化物四元和五元系材料系统和方法被公开用于半导体结构，包括激光二极管，晶体管和光电检测器，其减少或消除相分离并提供增加的发射效率。 在示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的InGaAlNP层的第一三元，四元或五元层材料层，使用基本上不相分离的InGaAlNP活性层的四元或五元素材料活性层，以及 基本上没有相分离形成的相反导电类型的第三三元，四元或五元组InGaAlNP材料层。
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公开(公告)号：US4110661A
公开(公告)日：1978-08-29
申请号：US783882
申请日：1977-04-01
CPC分类号： H01L33/38 , G02B6/4202 , H01L33/0025 , H01L33/405
摘要： A high-speed, light emitting device which utilizes a solid state source for generating light for use in fiber optical communications. The source is an active, narrow band gap layer of semiconductive material between heterojunctions formed with a p.sup.+ -type material on one side of an n.sup.+ -type material on the other side. A mirror on the back of the source reflects light toward an optical fiber abutting the substrate on the front of the source. A side mirror traverses the edge of the active layer at an angle of about 45.degree. and reflects light traveling parallel to the active layer toward the optical fiber. Contacts are coupled to the semiconductor material for applying an electrical signal across the active layer to generate light. In a preferred embodiment, the active layer is GaAsSb joined to GaAlAsSb and the substrate is GaAs.
摘要翻译： 一种利用固态光源产生用于光纤通信的光的高速发光装置。 源是在另一侧的n +型材料的一侧上由p +型材料形成的异质结之间的半导体材料的有源窄带隙层。 源的背面上的反射镜将光反射到邻近源的前面的基板的光纤。 侧镜以约45°的角度横越有源层的边缘，并将平行于有源层的光朝向光纤反射。 触点耦合到半导体材料，用于跨有源层施加电信号以产生光。 在优选实施例中，有源层是连接到GaAlAsSb的GaAsSb，衬底是GaAs。
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公开(公告)号：US07902046B2
公开(公告)日：2011-03-08
申请号：US11524499
申请日：2006-09-19
申请人： Yu-Hsuan Kuo , James S. Harris, Jr.
发明人： Yu-Hsuan Kuo , James S. Harris, Jr.
CPC分类号： C30B33/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532
摘要： Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is significantly lattice mismatched with respect to the substrate, and is preferably substantially lattice matched with a SiGe device to be grown on top of the buffer. The resulting buffer structure is relatively thin and provides low defect density, and low surface roughness. Disadvantages of thick graded buffer layers, such as high cost, high surface roughness, mechanical fragility, and CTE mismatch, are thereby avoided.
摘要翻译： 通过在生长温度下沉积SiGe缓冲层，然后在高于生长温度的温度下对所得到的结构进行退火来提供SiGe在显着晶格错配衬底（例如Si）上的生长。 可以按照相同的步骤包括附加的缓冲层。 SiGe缓冲液相对于衬底显着地晶格失配，并且优选地与要在缓冲器顶部生长的SiGe器件基本上晶格匹配。 得到的缓冲结构相对较薄，提供低缺陷密度和低表面粗糙度。 从而避免了诸如高成本，高表面粗糙度，机械脆性和CTE不匹配等厚梯度缓冲层的缺点。
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