公开(公告)号：US07879711B2

公开(公告)日：2011-02-01

申请号：US11563973

申请日：2006-11-28

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Jean Wang

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Jean Wang

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  H01L23/3114 ,  H01L23/3185 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13025 ,  H01L2224/14051 ,  H01L2224/14135 ,  H01L2224/14155 ,  H01L2224/14179 ,  H01L2224/17517 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29035 ,  H01L2224/29075 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/29169 ,  H01L2224/29184 ,  H01L2224/29186 ,  H01L2224/3003 ,  H01L2224/30155 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81193 ,  H01L2224/83193 ,  H01L2224/9202 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  Y10S438/926 ,  H01L2924/00 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method includes: forming a transistor gate over a first substrate and at least one first dummy structure within the first substrate; forming an interlayer dielectric (ILD) layer over the gate transistor, the ILD layer including at least one contact structure formed therein and making electrical contact with the transistor gate and at least one first conductive structure formed therethrough at least partially over a surface of the dummy structure; forming a passivation layer over the ILD layer, the passivation layer comprising at least one first pad structure formed therein and making electrical contact with the conductive structure; bonding the first substrate with a second substrate; removing at least a portion of the first dummy structure, thereby forming a first opening; and forming a conductive material within the first opening for formation of a second conductive structure, the second conductive structure being electrically coupled to the first conductive structure.

摘要翻译： 一种方法包括：在第一衬底和第一衬底内的至少一个第一虚拟结构之上形成晶体管栅极; 在所述栅极晶体管上形成层间电介质层（ILD）层，所述ILD层包括形成在其中的至少一个接触结构，并与所述晶体管栅极形成电接触;以及至少一个第一导电结构，其至少部分地形成在所述虚拟 结构体; 在所述ILD层上形成钝化层，所述钝化层包括形成在其中并与所述导电结构电接触的至少一个第一焊盘结构; 用第二衬底接合第一衬底; 去除所述第一虚设结构的至少一部分，从而形成第一开口; 以及在所述第一开口内形成导电材料以形成第二导电结构，所述第二导电结构电耦合到所述第一导电结构。

公开(公告)号：US20090142903A1

公开(公告)日：2009-06-04

申请号：US12054097

申请日：2008-03-24

申请人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

IPC分类号： H01L21/30 ,  B29C65/00

CPC分类号： H01L25/50 ,  H01L21/67051 ,  H01L24/28 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/8301 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01094 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/19042 ,  Y10T156/14 ,  H01L2924/00

摘要： The present disclosure provides a bonding apparatus. The bonding apparatus includes a cleaning module designed for cleaning chips; and a chip-to-wafer bonding chamber configured to receive the chips from the cleaning module and designed for bonding the chips to a wafer.

摘要翻译： 本公开提供了一种接合装置。 接合装置包括设计用于清洁芯片的清洁模块; 以及芯片到晶片接合室，其被配置为从所述清洁模块接收所述芯片并被设计用于将所述芯片接合到晶片。

公开(公告)号：US08387674B2

公开(公告)日：2013-03-05

申请号：US12054097

申请日：2008-03-24

申请人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

发明人： Chen-Hua Yu ,  Jui-Pin Hung ,  Weng-Jin Wu ,  Jean Wang ,  Wen-Chih Chiou

IPC分类号： B29C65/00

CPC分类号： H01L25/50 ,  H01L21/67051 ,  H01L24/28 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/8301 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01094 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/19042 ,  Y10T156/14 ,  H01L2924/00

摘要： The present disclosure provides a bonding apparatus. The bonding apparatus includes a cleaning module designed for cleaning chips; and a chip-to-wafer bonding chamber configured to receive the chips from the cleaning module and designed for bonding the chips to a wafer.

公开(公告)号：US07956448B2

公开(公告)日：2011-06-07

申请号：US12878060

申请日：2010-09-09

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Jean Wang

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Jean Wang

IPC分类号： H01L23/06

CPC分类号： H01L21/76898 ,  H01L23/3114 ,  H01L23/3185 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13025 ,  H01L2224/14051 ,  H01L2224/14135 ,  H01L2224/14155 ,  H01L2224/14179 ,  H01L2224/17517 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29035 ,  H01L2224/29075 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/29169 ,  H01L2224/29184 ,  H01L2224/29186 ,  H01L2224/3003 ,  H01L2224/30155 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81193 ,  H01L2224/83193 ,  H01L2224/9202 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  Y10S438/926 ,  H01L2924/00 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A stacked structure includes a first substrate bonded to a second substrate such that a first pad structure of the first substrate contacts a second pad structure of the second substrate. A transistor gate is formed over the second substrate, and a first conductive structure extends through the second substrate and has a top surface that is substantially planar with a top surface of the second substrate. An interlayer dielectric (ILD) layer is disposed over the transistor gate, and a passivation layer is disposed over the ILD layer and includes a second pad structure that makes electrical contact with the second conductive structure. The ILD layer includes at least one contact structure that extends through the ILD layer and makes electrical contact with the transistor gate. A second conductive structure is disposed in the ILD layer and is at least partially disposed over a surface of the first conductive structure.

摘要翻译： 层叠结构包括结合到第二基板的第一基板，使得第一基板的第一焊盘结构接触第二基板的第二焊盘结构。 晶体管栅极形成在第二衬底上，并且第一导电结构延伸穿过第二衬底并且具有与第二衬底的顶表面基本平坦的顶表面。 在晶体管栅极上设置层间绝缘层（ILD）层，钝化层设置在ILD层之上，并且包括与第二导电结构电接触的第二焊盘结构。 ILD层包括延伸穿过ILD层并与晶体管栅极电接触的至少一个接触结构。 第二导电结构设置在ILD层中并且至少部分地设置在第一导电结构的表面上。

公开(公告)号：US20080124845A1

公开(公告)日：2008-05-29

申请号：US11563973

申请日：2006-11-28

申请人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Jean Wang

发明人： Chen-Hua Yu ,  Wen-Chih Chiou ,  Weng-Jin Wu ,  Jean Wang

IPC分类号： H01L21/335

CPC分类号： H01L21/76898 ,  H01L23/3114 ,  H01L23/3185 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/13009 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13025 ,  H01L2224/14051 ,  H01L2224/14135 ,  H01L2224/14155 ,  H01L2224/14179 ,  H01L2224/17517 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29035 ,  H01L2224/29075 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/29169 ,  H01L2224/29184 ,  H01L2224/29186 ,  H01L2224/3003 ,  H01L2224/30155 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/81193 ,  H01L2224/83193 ,  H01L2224/9202 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/12041 ,  H01L2924/14 ,  Y10S438/926 ,  H01L2924/00 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A method includes: forming a transistor gate over a first substrate and at least one first dummy structure within the first substrate; forming an interlayer dielectric (ILD) layer over the gate transistor, the ILD layer including at least one contact structure formed therein and making electrical contact with the transistor gate and at least one first conductive structure formed therethrough at least partially over a surface of the dummy structure; forming a passivation layer over the ILD layer, the passivation layer comprising at least one first pad structure formed therein and making electrical contact with the conductive structure; bonding the first substrate with a second substrate; removing at least a portion of the first dummy structure, thereby forming a first opening; and forming a conductive material within the first opening for formation of a second conductive structure, the second conductive structure being electrically coupled to the first conductive structure.

摘要翻译： 一种方法包括：在第一衬底和第一衬底内的至少一个第一虚拟结构之上形成晶体管栅极; 在所述栅极晶体管上形成层间电介质层（ILD）层，所述ILD层包括形成在其中的至少一个接触结构，并与所述晶体管栅极形成电接触;以及至少一个第一导电结构，其至少部分地形成在所述虚拟 结构体; 在所述ILD层上形成钝化层，所述钝化层包括形成在其中并与所述导电结构电接触的至少一个第一焊盘结构; 用第二衬底接合第一衬底; 去除所述第一虚设结构的至少一部分，从而形成第一开口; 以及在所述第一开口内形成导电材料以形成第二导电结构，所述第二导电结构电耦合到所述第一导电结构。

公开(公告)号：US20080108223A1

公开(公告)日：2008-05-08

申请号：US11552364

申请日：2006-10-24

申请人： Ching-Ya Wang ,  Weng-Jin Wu ,  Henry Lo ,  Jean Wang

发明人： Ching-Ya Wang ,  Weng-Jin Wu ,  Henry Lo ,  Jean Wang

IPC分类号： H01L21/311

CPC分类号： H01L21/31133 ,  G03F7/422 ,  G03F7/423

摘要： A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photoresist mask, treating a portion of the photoresist mask with an etching species, and removing the treated photoresist mask with a supercritical fluid. The etching, treating, and removing can be performed in one chamber.

摘要翻译： 一种方法和装置，包括提供其上形成有电介质层的衬底，在电介质层上形成光致抗蚀剂掩模，光刻胶掩模限定开口，通过光致抗蚀剂掩模中的至少一个开口蚀刻电介质层， 具有蚀刻物质的光致抗蚀剂掩模，并用超临界流体去除经处理的光致抗蚀剂掩模。 蚀刻，处理和去除可以在一个室中进行。

公开(公告)号：US07951723B2

公开(公告)日：2011-05-31

申请号：US11552364

申请日：2006-10-24

申请人： Ching-Ya Wang ,  Weng-Jin Wu ,  Henry Lo ,  Jean Wang

发明人： Ching-Ya Wang ,  Weng-Jin Wu ,  Henry Lo ,  Jean Wang

IPC分类号： H01L21/461

CPC分类号： H01L21/31133 ,  G03F7/422 ,  G03F7/423

摘要： A method and apparatus involve providing a substrate having a dielectric layer formed thereon, forming a photoresist mask over the dielectric layer, the photoresist mask defining an opening, etching the dielectric layer through the at least one opening in the photoresist mask, treating a portion of the photoresist mask with an etching species, and removing the treated photoresist mask with a supercritical fluid. The etching, treating, and removing can be performed in one chamber.

摘要翻译： 一种方法和装置，包括提供其上形成有电介质层的衬底，在电介质层上形成光致抗蚀剂掩模，光刻胶掩模限定开口，通过光致抗蚀剂掩模中的至少一个开口蚀刻电介质层， 具有蚀刻物质的光致抗蚀剂掩模，并用超临界流体去除经处理的光致抗蚀剂掩模。 蚀刻，处理和去除可以在一个室中进行。

公开(公告)号：US08109407B2

公开(公告)日：2012-02-07

申请号：US11755508

申请日：2007-05-30

申请人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Jui-Pin Hung ,  Ming-Shih Yeh

发明人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Jui-Pin Hung ,  Ming-Shih Yeh

IPC分类号： B65D45/28 ,  B65D53/06

CPC分类号： H01L21/67373 ,  H01L21/67376 ,  H01L21/67389

摘要： An apparatus includes an enclosure and a door configured to seal the enclosure. The door includes a plate. A rotational apparatus is disposed over the plate. At least one first member with a first arm extends from a first rib of the first member. At least one second member with a second arm extends from a second rib of the second member. The first and second arms are connected to the rotational apparatus. At least one corner member has a first edge. The first edge has a shape corresponding to a shape of a corner of the frame. The corner member is connected to a first end of the third arm. A second end of the third arm is connected to the rotational apparatus. A sealing material is disposed along a first longitudinal side of the first rib and a second longitudinal side of the second rib.

摘要翻译： 一种装置包括外壳和构造成密封外壳的门。 门包括一个板。 旋转装置设置在板上。 具有第一臂的至少一个第一构件从第一构件的第一肋延伸。 具有第二臂的至少一个第二构件从第二构件的第二肋延伸。 第一和第二臂连接到旋转装置。 至少一个角部件具有第一边缘。 第一边缘具有与框架的角部的形状对应的形状。 角部件连接到第三臂的第一端。 第三臂的第二端连接到旋转装置。 密封材料沿着第一肋的第一纵向侧面和第二肋的第二纵向侧面设置。

公开(公告)号：US20080298933A1

公开(公告)日：2008-12-04

申请号：US11754789

申请日：2007-05-29

申请人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Fu-Kang Tien ,  Jui-Pin Hung

发明人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Fu-Kang Tien ,  Jui-Pin Hung

IPC分类号： H01L21/00

CPC分类号： H01L21/67017 ,  H01L21/67393 ,  H01L21/67772

摘要： An apparatus includes a first enclosure, a first door, at least one first valve, at least one inlet diffuser and at least one substrate holder. The first enclosure has a first opening. The first door is configured to seal the first opening. The first valve is coupled to the first enclosure. The inlet diffuser is coupled to the first valve and configured to provide a first gas with a temperature substantially higher than a temperature of an environment around the first enclosure. Each substrate holder disposed within the first enclosure supports at least one substrate.

摘要翻译： 一种装置包括第一外壳，第一门，至少一个第一阀，至少一个入口扩散器和至少一个基板支架。 第一个外壳具有第一个开口。 第一个门被配置为密封第一个开口。 第一阀联接到第一外壳。 入口扩散器联接到第一阀并且被配置为提供具有基本上高于围绕第一外壳的环境的温度的温度的第一气体。 设置在第一外壳内的每个衬底保持器支撑至少一个衬底。

公开(公告)号：US20080121526A1

公开(公告)日：2008-05-29

申请号：US11563515

申请日：2006-11-27

申请人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Lawrance Sheu

发明人： Yi-Li Hsiao ,  Chen-Hua Yu ,  Jean Wang ,  Lawrance Sheu

IPC分类号： C25D5/04 ,  C25D17/10 ,  C25D17/00

CPC分类号： C25D17/12 ,  C25D7/123 ,  C25D17/001

摘要： An adjustable anode assembly for a wet processing apparatus to allow selective tuning of the electrical field density distribution within a wet process chemical of the apparatus, which in turn allows the process specification or specifications to be selectively varied across the process surface of a wafer when processed by the apparatus. The adjustable anode assembly includes an anode which may be divided into several plates, at least one of which is capable of being moved from a first plane to at least a second plane.

摘要翻译： 一种用于湿处理设备的可调节阳极组件，用于允许选择性地调节设备的湿法化学品中的电场密度分布，这又允许在处理过程中跨过晶片的工艺表面选择性地改变工艺规格或规格 通过该装置。 可调节阳极组件包括阳极，该阳极可分为多个板，其中至少一个能够从第一平面移动到至少第二平面。