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    Electrode/electrolyte interfaces in solid oxide fuel cells
    1.
    发明申请
    Electrode/electrolyte interfaces in solid oxide fuel cells 审中-公开
    固体氧化物燃料电池中的电极/电解质界面

    公开(公告)号：US20090011314A1

    公开(公告)日：2009-01-08

    申请号：US12217503

    申请日：2008-07-03

    申请人： Cheng-Chieh Chao ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    发明人： Cheng-Chieh Chao ,  Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    IPC分类号： H01M8/10

    CPC分类号： H01M8/1213 ,  H01M4/8642 ,  H01M4/8657 ,  H01M4/9066 ,  H01M8/1231 ,  H01M8/1246 ,  H01M8/1253 ,  H01M8/126 ,  H01M2300/0074 ,  H01M2300/0094 ,  Y02E60/525 ,  Y02P70/56

    摘要： A solid oxide fuel cell (SOFC) with reduced electrical resistance and greater vacancy density control is provided. The SOFC includes an interfacial layer deposited, preferably by atomic layer deposition (ALD), between an electrode layer and an electrolyte layer. The interfacial layer includes an ion-conductive material. By use of ALD, the interfacial layer can have a very small thickness and can include layered structures of alternating materials. The interfacial layer can also include doping gradient structures of doped ion-conductive materials. Ultra-thin film platinum layers for high current density and cermet layers at the electrode/electrolyte interface are also provided.

    摘要翻译： 提供具有降低的电阻和更大的空位密度控制的固体氧化物燃料电池（SOFC）。 SOFC包括优选通过原子层沉积（ALD）沉积在电极层和电解质层之间的界面层。 界面层包括离子传导材料。 通过使用ALD，界面层可以具有非常小的厚度并且可以包括交替材料的分层结构。 界面层还可以包括掺杂离子传导材料的掺杂梯度结构。 还提供了用于高电流密度的超薄膜铂层和电极/电解质界面处的金属陶瓷层。

    Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadiendyl precursor
    4.
    发明申请
    Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadiendyl precursor 有权
    通过正丙基四甲基环戊二烯基前体原子层沉积氧化锶

    公开(公告)号：US20080242111A1

    公开(公告)日：2008-10-02

    申请号：US12070376

    申请日：2008-02-14

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    IPC分类号： C23C16/06 ,  H01L21/314

    CPC分类号： C23C16/30 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/3141

    摘要： A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.

    摘要翻译： 提供了一种在衬底上沉积氧化物材料的方法。 沉积室保持衬底，其中衬底处于特定温度，并且腔室具有室压力和壁温度。 将含有阳离子材料原子的前体分子提供到室，其中前体具有线路温度和源温度。 氧化剂被提供到室，其中氧化剂具有源流速。 水被提供到室，其中水具有源温度。 通过交替的前体脉冲，水和氧化剂与腔室的清洗相结合，以提供基底上氧化物材料的低污染水平和高生长速率，其中脉冲和吹扫具有持续时间和流速。 可重复的生长周期包括脉冲前体，清洗室，脉冲水，脉冲氧化剂和清洗室。

    Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor
    5.
    发明授权
    Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor 有权
    通过N-丙基四甲基环戊二烯基前体原子层沉积氧化锶

    公开(公告)号：US07790629B2

    公开(公告)日：2010-09-07

    申请号：US12070376

    申请日：2008-02-14

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    IPC分类号： H01L21/31

    CPC分类号： C23C16/30 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/3141

    摘要： A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.

    摘要翻译： 提供了一种在衬底上沉积氧化物材料的方法。 沉积室保持衬底，其中衬底处于特定温度，并且腔室具有室压力和壁温度。 将含有阳离子材料原子的前体分子提供到室，其中前体具有线路温度和源温度。 氧化剂被提供到室，其中氧化剂具有源流速。 水被提供到室，其中水具有源温度。 通过交替的前体脉冲，水和氧化剂与腔室的清洗相结合，以提供基底上氧化物材料的低污染水平和高生长速率，其中脉冲和吹扫具有持续时间和流速。 可重复的生长周期包括脉冲前体，清洗室，脉冲水，脉冲氧化剂和清洗室。

    Precursor selection method for chemical vapor deposition techniques
    6.
    发明授权
    Precursor selection method for chemical vapor deposition techniques 失效
    化学气相沉积技术的前体选择方法

    公开(公告)号：US08163338B2

    公开(公告)日：2012-04-24

    申请号：US12070389

    申请日：2008-02-14

    申请人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    发明人： Timothy P. Holme ,  Friedrich B. Prinz ,  Masayuki Sugawara

    IPC分类号： C23C16/00 ,  G06G7/58

    CPC分类号： C23C16/404 ,  C23C16/409 ,  C23C16/44 ,  C30B23/02 ,  C30B25/02

    摘要： A method of precursor selection for thin film deposition is provided, that includes a group of precursors, using a rule-set for selecting one or more candidate precursors for thermal stability, high growth rate, and low contamination. Candidate geometries and constituent geometries are simulated and optimized, and bond strengths of the candidates and constituents are determined. The rule-set is based on bond strength that compares molecule and constituent energies between a set of bond strengths within a candidate ligand or between a metal atom and one ligand. The rule-set requires metal atom-ligand bonds are between 0.2 and 3 eV, metal atom-ligand bond strengths are less than metal atom-ligand bond strengths of other candidates. The metal atom-ligand bond strength is >TΔS, where T is a reaction temperature and ΔS is the reaction entropy change and the bond within a ligand, where (ligand bond)>(metal atom and ligand bond).

    摘要翻译： 提供了一种用于薄膜沉积的前体选择方法，其包括一组前体，使用规则集来选择用于热稳定性，高生长速率和低污染的一种或多种候选前体。 模拟和优化候选几何和组成几何，确定候选人和组成部分的债券强度。 规则集是基于结合强度，其比较候选配体之间或金属原子与一个配体之间的一组键强度之间的分子和组分能量。 规则集要求金属原子 - 配体键的介于0.2和3eV之间，金属原子 - 配体键强度小于其他候选物的金属原子 - 配体键强度。 金属原子 - 配体键合强度> T＆Dgr; S，其中T是反应温度，Dgr; S是反应熵变和配体内的键（配体键）>（金属原子和配体键）。

    Field-aided preferential deposition of precursors
    7.
    发明授权
    Field-aided preferential deposition of precursors 失效
    现场辅助优先沉积前体

    公开(公告)号：US08496999B2

    公开(公告)日：2013-07-30

    申请号：US12383588

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  Stephen Walch ,  Wonyoung Lee ,  James F. Mack

    IPC分类号： C23C16/02

    CPC分类号： C23C16/047 ,  C23C16/45536 ,  C23C16/45544 ,  G01Q30/02 ,  G01Q80/00

    摘要： Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.

    摘要翻译： 通过包括以下步骤的方法提供区域选择性原子层沉积。 首先，提供基板。 其次，扫描探针显微镜（SPM）的尖端设置在基板的表面附近。 然后在尖端和表面之间建立电位，导致在尖端附近产生一个或多个局部电效应。 提供用于原子层沉积（ALD）的沉积反应物，并且由于局部增强的ALD反应速率，由局部电效应限定的图案沉积。

    Quantum dot ultracapacitor and electron battery
    8.
    发明申请
    Quantum dot ultracapacitor and electron battery 有权
    量子点超级电容器和电子电池

    公开(公告)号：US20100183919A1

    公开(公告)日：2010-07-22

    申请号：US12657198

    申请日：2010-01-15

    申请人： Timothy P. Holme ,  Friedrich B. Prinz

    发明人： Timothy P. Holme ,  Friedrich B. Prinz

    IPC分类号： H01M4/02

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L28/40 ,  H01L29/127

    摘要： The present invention provides a solid-state energy storage device having at least one quantum confinement species (QCS), where the QCS can include a quantum dot (QD), quantum well, or nanowire. The invention further includes at least one layer of a dielectric material with at least one QCS incorporated there to, and a first conductive electrode disposed on a top surface of the at least one layer of the dielectric material, and a second conductive electrode is disposed on a bottom surface of the at least one layer of dielectric material, where the first electrode and the second electrode are disposed to transfer a charge to the at least one QCS, where when an electrical circuit is disposed to provide an electric potential across the first electrode and the second electrode, the electric potential discharges the transferred charge from the at least one QCS to the electrical circuit.

    摘要翻译： 本发明提供一种具有至少一个量子限制物质（QCS）的固态储能装置，其中QCS可以包括量子点（QD），量子阱或纳米线。 本发明还包括至少一层电介质材料，其中结合有至少一个QCS，以及设置在电介质材料的至少一层的顶表面上的第一导电电极，第二导电电极设置在 所述至少一层介电材料的底表面，其中所述第一电极和所述第二电极被设置成将电荷转移到所述至少一个QCS，其中当设置电路以在所述第一电极上提供电位时 和所述第二电极，所述电位将所传送的电荷从所述至少一个QCS放电至所述电路。

    Quantum dot solar cell with quantum dot bandgap gradients
    9.
    发明申请
    Quantum dot solar cell with quantum dot bandgap gradients 有权
    量子点带隙量子点太阳能电池

    公开(公告)号：US20090255580A1

    公开(公告)日：2009-10-15

    申请号：US12383584

    申请日：2009-03-24

    申请人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  James F. Mack

    发明人： Neil Dasgupta ,  Friedrich B. Prinz ,  Timothy P. Holme ,  James F. Mack

    IPC分类号： H01L31/0216

    CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/0384

    摘要： Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.

    摘要翻译： 提供了带有量子点的高效光伏器件。 量子点具有许多可用于太阳能电池的理想特性，包括容易选择的带隙和费米能级。 特别地，量子点的尺寸和组成可以确定其带隙和费米能级。 通过在太阳能电池的有源层中精确沉积量子点，可以存在带隙梯度以有效的阳光吸收，激子解离和电荷传输。 不匹配费米等级也存在于相邻量子点之间，允许内置的电场形成并有助于电荷传输和预防激子重组。