Method and device for electrostatic fixing of substrates with polarized molecules
    2.
    发明授权
    Method and device for electrostatic fixing of substrates with polarized molecules 有权
    用极化分子静电固定底物的方法和装置

    公开(公告)号:US07733624B2

    公开(公告)日:2010-06-08

    申请号:US12089972

    申请日:2007-03-22

    IPC分类号: H01T23/0012

    CPC分类号: H01L21/6833

    摘要: Method for handling a substrate with polarizable molecules including providing a carrier with a first junction electrode and disposing the substrate between the first junction electrode and a second junction electrode. Fixing the substrate on the carrier is achieved by applying a voltage between the first junction electrode and the second junction electrode, so that the polarizable molecules are polarized. After removing the second junction electrode, the substrate remains fixed on the carrier.

    摘要翻译: 用于处理具有可极化分子的衬底的方法,包括提供具有第一接合电极的载体并将衬底设置在第一接合电极和第二接合电极之间。 通过在第一接合电极和第二接合电极之间施加电压来实现将衬底固定在载体上,使得可极化分子被极化。 在去除第二接合电极之后,衬底保持固定在载体上。

    Mobile holder for a wafer
    3.
    发明授权
    Mobile holder for a wafer 有权
    移动支架用于晶圆

    公开(公告)号:US07027283B2

    公开(公告)日:2006-04-11

    申请号:US10343688

    申请日:2001-07-30

    IPC分类号: H01T23/00

    CPC分类号: H01L21/6831 H01L21/6833

    摘要: The present invention provides a mobile holder for a wafer, which comprises a base element, a first fixing means and a second fixing means. The first fixing means is configured to allow a wafer to be fixed to the base element. The second fixing means is configured to fix the mobile holder to a support for said mobile holder.

    摘要翻译: 本发明提供了一种用于晶片的移动支架,其包括基座元件,第一固定装置和第二固定装置。 第一固定装置构造成允许晶片固定到基体元件。 第二固定装置被配置成将移动支架固定到所述移动支架的支撑件上。

    Method and Device for Electrostatic Fixing of Substrates With Polarizable Molecules
    4.
    发明申请
    Method and Device for Electrostatic Fixing of Substrates With Polarizable Molecules 有权
    用极化分子静电固定底物的方法和装置

    公开(公告)号:US20080232022A1

    公开(公告)日:2008-09-25

    申请号:US12089972

    申请日:2007-03-22

    IPC分类号: H01L21/683

    CPC分类号: H01L21/6833

    摘要: Method for handling a substrate with polarizable molecules including providing a carrier with a first junction electrode and disposing the substrate between the first junction electrode and a second junction electrode. Fixing the substrate on the carrier is achieved by applying a voltage between the first junction electrode and the second junction electrode, so that the polarizable molecules are polarized. After removing the second junction electrode, the substrate remains fixed on the carrier.

    摘要翻译: 用于处理具有可极化分子的衬底的方法,包括提供具有第一接合电极的载体并将衬底设置在第一接合电极和第二接合电极之间。 通过在第一接合电极和第二接合电极之间施加电压来实现将衬底固定在载体上,使得可极化分子被极化。 在去除第二接合电极之后,衬底保持固定在载体上。

    Method for handling a plurality of circuit chips
    5.
    发明授权
    Method for handling a plurality of circuit chips 有权
    用于处理多个电路芯片的方法

    公开(公告)号:US06514790B1

    公开(公告)日:2003-02-04

    申请号:US09786330

    申请日:2001-05-29

    IPC分类号: H01L2144

    CPC分类号: H01L21/67132

    摘要: In a method for handling in parallel a plurality of circuit chips, which are arranged in a first arrangement, which corresponds to their arrangement in the original wafer, on the surface of an auxiliary carrier, the plurality of circuit chips is picked up by a plurality of pick up devices. The plurality of pick up devices with the picked up circuit chips is moved simultaneously to one or several carriers, in such a way that, simultaneously with the motion, the first arrangement of the circuit chips is changed into a second arrangement, which is different from the first arrangement. Then the circuit chips are simultaneously placed in the second arrangement on the one or several carriers.

    摘要翻译: 在辅助载体的表面上并行处理以与原始晶片中的布置相对应的第一布置的多个电路芯片并行处理的方法,多个电路芯片被多个 的拾起装置。 具有拾取电路芯片的多个拾取装置同时移动到一个或多个载体,使得在运动的同时,将电路芯片的第一布置改变为第二布置,其不同于 第一个安排。 然后将电路芯片同时放置在一个或多个载体上的第二布置中。

    Process for joining inorganic substrates in a permanent manner
    7.
    发明授权
    Process for joining inorganic substrates in a permanent manner 失效
    以永久方式连接无机基材的方法

    公开(公告)号:US06328841B1

    公开(公告)日:2001-12-11

    申请号:US09269391

    申请日:1999-11-05

    IPC分类号: B32B3112

    CPC分类号: H01L21/2007

    摘要: In a method of connecting a first and a second silicon wafer, the first silicon wafer is first provided with a polyimide layer on a main surface thereof. Subsequently, a plasma-induced reaction between the polyimide layer and water is performed. A plasma-induced reaction is also performed between a main surface of the second silicon wafer and chlorine. The main surface of the second silicon wafer is then subjected to a treatment with hydrolyzed triethoxysilylpropanamine. Following this, the surfaces of the two silicon wafers, which have been subjected to the plasma-induced reactions, are joined together so as connect the silicon wafers permanently.

    摘要翻译: 在连接第一和第二硅晶片的方法中,第一硅晶片首先在其主表面上设置有聚酰亚胺层。 随后,进行聚酰亚胺层和水之间的等离子体诱导反应。 还在第二硅晶片的主表面和氯之间进行等离子体诱导反应。 然后将第二硅晶片的主表面用水解的三乙氧基甲硅烷基丙胺进行处理。 接下来,已经经受等离子体诱导反应的两个硅晶片的表面被连接在一起,以便永久地连接硅晶片。

    Method of subdividing a wafer
    9.
    发明授权
    Method of subdividing a wafer 有权
    细分晶圆的方法

    公开(公告)号:US06756288B1

    公开(公告)日:2004-06-29

    申请号:US10019138

    申请日:2002-06-03

    IPC分类号: H01L21301

    摘要: In a method of dicing a wafer, which comprises a plurality of individual circuit structures, a trench is first defined between at least two circuit structures on one face of the wafer. Subsequently, the trench is deepened down to a defined depth. Following this, one face of the wafer has fixed thereto a re-detachable intermediate support composed of a fixed intermediate support substrate and an adhesive medium which is applied to said intermediate support substrate and which can specifically be modified in terms of its adhesive strength, whereupon the wafer is dry-etched from the opposite face so that circuit chips are obtained which are connected to one another only via the intermediate support. Subsequently, the circuit chips are removed from the intermediate support. This method substantially reduces mechanical impairments that may occur during dicing of the circuit chips; on the one hand, this permits the production of circuit chips with a thickness of less than 50 &mgr;m and, on the other hand, it leads to mechanically substantially undamaged circuit chips.

    摘要翻译: 在包括多个单独电路结构的晶片切割的方法中,首先在晶片的一个面上的至少两个电路结构之间限定沟槽。 随后,将沟槽加深到限定的深度。 此后,晶片的一个面固定有由固定的中间支撑基板和粘合剂介质组成的可再拆卸的中间支撑件,该中间支撑件施加到所述中间支撑基板上,并且可以根据其粘合强度具体地进行修改, 从相对面干蚀刻晶片,从而获得仅通过中间支撑件相互连接的电路芯片。 随后,将电路芯片从中间支撑件移除。 该方法基本上减少了在电路芯片切割期间可能发生的机械损伤; 一方面,这允许生产厚度小于50um的电路芯片,另一方面它导致机械上基本上未损坏的电路芯片。

    Method for vertically integrating active circuit planes and vertically integrated circuit produced using said method
    10.
    发明授权
    Method for vertically integrating active circuit planes and vertically integrated circuit produced using said method 有权
    用于使用所述方法产生的垂直积分有源电路平面和垂直集成电路的方法

    公开(公告)号:US06444493B1

    公开(公告)日:2002-09-03

    申请号:US09857373

    申请日:2001-09-21

    IPC分类号: H01L2144

    摘要: In a method for vertically integrating active circuit planes, a first substrate having at least one integrated circuit in a first main surface thereof and further having connecting areas for the integrated circuit as well as outer connecting areas on the first main surface is provided in a first step. A second substrate having at least one integrated circuit in a first main surface thereof and further having connecting areas for the integrated circuit as well as open or openable areas on the first main surface is provided. The first main surfaces of the first and second substrates are joined in such a way that the connecting areas of the first substrate are connected to those of the second substrate in an electrically conductive manner in such a way that the outer connecting areas of the first substrate are in alignment with the open or openable areas of the second substrate. Subsequently, the second substrate is thinned and the outer connecting areas are exposed through the open or openable areas. The resultant chips can be further processed making use of standard methods.

    摘要翻译: 在用于垂直积分有源电路平面的方法中,在其第一主表面中具有至少一个集成电路并且还具有集成电路的连接区域以及第一主表面上的外连接区域的第一基板设置在第一 步。 第二基板在其第一主表面中具有至少一个集成电路,并且还具有用于集成电路的连接区域以及第一主表面上的打开或可打开区域。 第一和第二基板的第一主表面以这样的方式接合,使得第一基板的连接区域以导电方式连接到第二基板的连接区域,使得第一基板的外部连接区域 与第二基板的打开或可打开的区域对齐。 随后,第二基板变薄并且外部连接区域通过打开或可打开的区域露出。 所得到的芯片可以使用标准方法进一步加工。