摘要:
An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要:
An inspection apparatus by an electron beam comprises: an electron-optical device 70 having an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical system; a stage system 50 for holding and moving the object relative to the electron-optical system; a mini-environment chamber 20 for supplying a clean gas to the object to prevent dust from contacting to the object; a working chamber 31 for accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambers 41, 42 disposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loader 60 for transferring the object to the stage system through the loading chambers.
摘要:
In accordance with an embodiment, a sample structure analyzing method includes generating a beam and then applying the beam to a plurality of observation regions on a sample, and acquiring a plurality of diffraction images from the beam which has passed through the sample; and comparing the acquired diffraction images, and judging the difference between the observation regions from the comparison result, or identifying the grain boundary of crystal constituting the sample.
摘要:
In accordance with an embodiment, an analysis apparatus includes a secondary electron optical system, at least one detector, and a composition analysis unit. The secondary electron optical system includes a charged particle beam source and a lens. The charged particle beam source generates a charged particle beam and irradiates a sample with it. The lens controls a focal position and a trajectory of the charged particle beam using an electric field or a magnetic field. The detector detects a characteristic X-ray from the sample. The composition analysis unit analyzes a composition of a material constituting the sample from the detected characteristic X-ray. Each detector is arranged in such a manner that at least part of a detection surface thereof is placed on the same plane as an exit surface of the secondary electron optical system, or placed on the charged particle beam side of the same plane.
摘要:
An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.
摘要:
An electro-optical inspection apparatus is provided that is capable of preventing adhesion of dust or particles to the sample surface as much as possible. A stage (100) on which a sample (200) is placed is disposed inside a vacuum chamber (112) that can be evacuated to vacuum, and a dust collecting electrode (122) is disposed to surround a periphery of the sample (200). The dust collecting electrode (122) is applied with a voltage having the same polarity as a voltage applied to the sample (200) and an absolute value that is the same or larger than an absolute value of the voltage. Thus, because dust or particles such as particles adhere to the dust collecting electrode (122), adhesion of the dust or particles to the sample surface can be reduced. Instead of using the dust collecting electrode, it is possible to form a recess on a wall of the vacuum chamber containing the stage, or to dispose on the wall a metal plate having a mesh structure to which a predetermined voltage is applied. In addition, adhesion of dust or particles can be further reduced by disposing a gap control plate (124) having a through hole (124a) at the center above the sample (200) and the dust collecting electrode (122).
摘要:
A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.
摘要:
A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.
摘要:
There is provided a substrate inspection method. The method includes: maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; positioning the substrate on a stage in the inspection chamber; selecting an evaluation parameter according to a kind of said processing apparatus; and determining inspection regions of the substrate so that an inspection time required per a lot of the substrate is equal to a processing time spent for said processing step required per a lot of the substrate. The method also includes radiating a primary electron beam from an electron gun; deflecting the primary electron beam with an E*B unit; irradiating said inspection regions of the substrate with the deflected primary electron beam; and projecting secondary electrons emitted from said substrate through the E*B unit onto a detector with a secondary optical system.
摘要:
An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.