公开(公告)号：US20060118132A1

公开(公告)日：2006-06-08

申请号：US11005553

申请日：2004-12-06

申请人： Eric Bergman ,  Dana Scranton ,  Brian Aegerter

发明人： Eric Bergman ,  Dana Scranton ,  Brian Aegerter

IPC分类号： B08B3/12 ,  B08B3/00

CPC分类号： B08B3/02 ,  B08B3/10 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02052 ,  H01L21/67051

摘要： In a method for cleaning a wafer, the wafer is placed a processing chamber. A layer or film of liquid is provided on the wafer. Electrically charged aerosol droplets of a liquid are formed and directed to the workpiece. The charged aerosol particles accumulate on the workpiece. This creates an electrical charge on the workpiece. Contaminant particles on the workpiece are released and/or repelled by the electrical charge and are carried away in the liquid layer. The liquid layer is optionally continuously replenished with fresh liquid. The liquid layer may be thinned out in a localized aerosol impingement area, via a jet of gas, to allow the electrical charge of the aerosol to better collect on or near the surface of the workpiece.

摘要翻译： 在清洁晶片的方法中，将晶片放置在处理室中。 在晶片上设置一层或多层液体。 形成液体的带电气溶胶液滴并将其导向工件。 带电气溶胶颗粒聚集在工件上。 这会在工件上产生电荷。 工件上的污染物颗粒被电荷释放和/或排斥，并在液体层中被带走。 任选地用新鲜液体连续补充液体层。 液体层可以通过气体喷射在局部气溶胶冲击区域中变薄，以允许气溶胶的电荷更好地收集在工件的表面上或附近。

公开(公告)号：US20050034745A1

公开(公告)日：2005-02-17

申请号：US10917094

申请日：2004-08-11

申请人： Eric Bergman ,  Brian Aegerter ,  Mark Herron

发明人： Eric Bergman ,  Brian Aegerter ,  Mark Herron

IPC分类号： B08B3/02 ,  B08B3/08 ,  B08B7/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  B08B3/00

CPC分类号： H01L23/49582 ,  B08B3/00 ,  B08B3/02 ,  B08B3/044 ,  B08B3/08 ,  B08B7/00 ,  B08B2203/005 ,  B08B2203/007 ,  B08B2230/01 ,  H01L21/02052 ,  H01L21/02054 ,  H01L21/3065 ,  H01L21/6704 ,  H01L21/67051 ,  H01L2924/0002 ,  H05K3/3426 ,  Y02P70/613 ,  H01L2924/00

摘要： In a process for removing an anti-reflective coating, a workpiece such as a semiconductor wafer is placed in a support in a process chamber. A heated liquid including a halogenated additive is applied onto the workpiece, forming a liquid layer on the workpiece. The thickness of the liquid layer is controlled. Ozone is introduced into the process chamber by injection into the liquid or directly into the process chamber. Ozone oxidizes and removes the film on the workpiece. The methods are especially useful for anti-reflective coating or sacrificial light absorbing layers.

摘要翻译： 在去除抗反射涂层的工艺中，将诸如半导体晶片的工件放置在处理室中的支撑体中。 将包含卤化添加剂的加热液施加到工件上，在工件上形成液体层。 控制液体层的厚度。 通过注入液体或直接进入处理室将臭氧引入处理室。 臭氧氧化并去除工件上的膜。 该方法对抗反射涂层或牺牲光吸收层特别有用。

公开(公告)号：US06774056B2

公开(公告)日：2004-08-10

申请号：US10200043

申请日：2002-07-19

申请人： Jon Kuntz ,  Steven Peace ,  Ed Derks ,  Brian Aegerter

发明人： Jon Kuntz ,  Steven Peace ,  Ed Derks ,  Brian Aegerter

IPC分类号： H01L2131

CPC分类号： H01L21/68785 ,  H01L21/67057 ,  H01L21/67086 ,  H01L21/6715 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/14 ,  Y10S438/906 ,  Y10S438/913

摘要： A process system for processing a semiconductor wafer or other similar flat workpiece has a head including a workpiece holder. A motor in the head spins the workpiece. A head lifter lowers the head to move the workpiece into a bath of liquid in a bowl. Sonic energy is introduced into the liquid and travels through the liquid to the workpiece, to assist in processing. The head is lifted to bring the workpiece to a rinse position. The bath liquid is drained. The workpiece is rinsed via radial spray nozzles in the base. The head is lifted to a dry position. A reciprocating swing arm sprays a drying fluid onto the bottom surface of the spinning wafer, to dry the wafer.

摘要翻译： 用于处理半导体晶片或其它类似的平坦工件的处理系统具有包括工件保持器的头部。 头部的电机旋转工件。 头部升降器降低头部以将工件移动到碗中的液体浴中。 声能被引入到液体中并通过液体传送到工件，以帮助加工。 抬起头部以使工件进入冲洗位置。 浴液被排出。 工件通过基座中的径向喷嘴冲洗。 头部被抬起到干燥的位置。 往复摇摆臂将干燥流体喷射到旋转晶片的底表面上，以干燥晶片。

公开(公告)号：US20070000527A1

公开(公告)日：2007-01-04

申请号：US11172162

申请日：2005-06-30

申请人： Brian Aegerter ,  Daniel Woodruff ,  Coby Grove ,  Gregory Wilson

发明人： Brian Aegerter ,  Daniel Woodruff ,  Coby Grove ,  Gregory Wilson

IPC分类号： B08B3/00

CPC分类号： H01L21/68728 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67751 ,  H01L21/68785

摘要： A workpiece support apparatus for use in a process vessel and process system for treating semiconductor workpieces. The process vessel is to be utilized in an integrated tool for wet chemical treatment of a semiconductor workpiece. The workpiece support apparatus includes a rotor having a central cavity and guide pins mounted at an outer perimeter. A workpiece support having extendable workpiece support fingers is connected to the rotor. The extendable workpiece support fingers are moveable from a first position to a second position. A bellows seal connects the workpiece support to the rotor. A fluid delivery tube is positioned in the central cavity of the rotor and connected to a supply of fluid. When the extendable workpiece support fingers are in the first position, the guide pins of the rotor cannot interfere with the loading of a workpiece onto the extendable workpiece support fingers, and when the extendable workpiece support fingers are in the second position, a pressurized fluid is delivered through the delivery tube to create a low pressure region adjacent an inner surface of the workpiece, lifting the workpiece off the extendable workpiece support fingers, exposing the entire backside of the workpiece for processing.

摘要翻译： 用于处理容器的工件支撑装置和用于处理半导体工件的处理系统。 该处理容器用于半导体工件的湿化学处理的集成工具中。 工件支撑装置包括具有安装在外周的中心腔和导销的转子。 具有可延伸的工件支撑指的工件支撑件连接到转子。 可伸展工件支撑指可从第一位置移动到第二位置。 波纹管密封将工件支撑件连接到转子。 流体输送管定位在转子的中心空腔中并连接到流体供应源。 当可延伸的工件支撑指状件处于第一位置时，转子的引导销不会干扰工件对可延伸的工件支撑指的加载，并且当可延伸的工件支撑指状件处于第二位置时，加压流体是 通过输送管输送以产生邻近工件的内表面的低压区域，将工件从可延伸的工件支撑指状物上提起，暴露工件的整个背面进行处理。

公开(公告)号：US20050233589A1

公开(公告)日：2005-10-20

申请号：US11151896

申请日：2005-06-14

申请人： Brian Aegerter ,  Curt Dundas ,  Tom Ritzdorf ,  Gary Curtis ,  Michael Jolley

发明人： Brian Aegerter ,  Curt Dundas ,  Tom Ritzdorf ,  Gary Curtis ,  Michael Jolley

IPC分类号： B08B3/00 ,  B44C1/22 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31111 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708

摘要： In a process for removing etch residue, liquid including an acid and an oxidizer is applied to the back side and peripheral edge of a wafer. The front or device side of the wafer is left unprocessed, or may be exposed to an inert fluid such as a purge gas (e.g., nitrogen or helium), to a rinse such as deionized water, or to another processing fluid such as a more highly diluted etchant. The front side of the wafer is either left unprocessed, or is processed to a lesser degree without damage to the underlying devices, metal interconnects or semiconductor layers.

摘要翻译： 在去除蚀刻残留物的方法中，将包含酸和氧化剂的液体施加到晶片的背面和周缘。 晶片的前部或装置侧未被处理，或者可以暴露于诸如清除气体（例如氮气或氦气）的惰性流体到漂洗液如去离子水，或者暴露于另一种处理流体，例如更多 高度稀释的蚀刻剂。 晶片的前侧要么是未加工的，要么被加工程度较小，而不会损坏底层器件，金属互连或半导体层。

公开(公告)号：US20070193607A1

公开(公告)日：2007-08-23

申请号：US11739201

申请日：2007-04-24

申请人： John Ghekiere ,  Aaron Arvidson ,  Bruce Fender ,  Craig Meuchel ,  Raoul Schroder ,  Brian Aegerter ,  Ron Flink ,  Jason Rye

发明人： John Ghekiere ,  Aaron Arvidson ,  Bruce Fender ,  Craig Meuchel ,  Raoul Schroder ,  Brian Aegerter ,  Ron Flink ,  Jason Rye

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67051 ,  C23G5/00 ,  H01L21/02052

摘要： In methods and apparatus for cleaning a wafer, a cleaning liquid is sprayed or jetted in a direction generally tangent to the circular edge of a spinning wafer. This enhances removal of contaminants from areas near the edge. Re-deposition of contaminant pieces or particles back onto the wafer is reduced because the direction of the spray carries the contaminant off of the wafer. Insoluble contaminant films, such as post etch residue, may be removed via one or more of the pressure of the cleaning liquid, the effects of higher process temperatures from heating the cleaning liquid, and by the chemical composition of the cleaning liquid.

摘要翻译： 在清洗晶片的方法和装置中，清洗液体在与旋转晶片的圆形边缘大致相切的方向上喷射或喷射。 这增强了从边缘附近的区域去除污染物。 由于喷射方向将污染物从晶片上脱落，所以将污染物片或颗粒重新沉积回到晶片上被减少。 可以通过清洗液体的一个或多个压力，加热清洗液体中较高工艺温度的影响以及清洗液体的化学成分来除去不溶性污染物膜，例如后蚀刻残留物。

公开(公告)号：US06692613B2

公开(公告)日：2004-02-17

申请号：US10223974

申请日：2002-08-20

申请人： Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson ,  Brian Aegerter ,  Curt T. Dundas

发明人： Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson ,  Brian Aegerter ,  Curt T. Dundas

IPC分类号： H01L2348

CPC分类号： H01L21/6715 ,  B08B3/04 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S118/90 ,  Y10S438/906 ,  Y10S438/913

摘要： A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

摘要翻译： 用于处理半导体晶片或类似物品的方法包括在旋转晶片时旋转晶片并将其施加到晶片的第一侧的步骤。 流体通过离心力在晶片的第一侧上在所有方向上径向向外流动。 当流体从晶片的圆周边缘流出时，其被包含在环形储存器中，使得流体也流到晶片的第二侧的外部环形区域。 开口允许流体从储存器流出。 开口限定分流线的位置，超过该分隔线，流体不会在晶片的第二侧上行进。 用于处理半导体晶片或类似物品的装置包括具有由上下转子形成的处理室的反应器。 晶片支撑在转子之间。 转子由旋转电机旋转。 处理流体在中心位置被引入到晶片的顶表面或底表面上，或在两个表面上。 流体向外均匀地向各个方向流动。 晶片支架自动提升晶片，从而当转子在加工后彼此分离时，可以通过机器人将其从反应器中移除。

公开(公告)号：US06423642B1

公开(公告)日：2002-07-23

申请号：US09437711

申请日：1999-11-10

申请人： Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson ,  Brian Aegerter ,  Curt T. Dundas

发明人： Steven L. Peace ,  Gary L. Curtis ,  Raymon F. Thompson ,  Brian Aegerter ,  Curt T. Dundas

IPC分类号： H01L21311

CPC分类号： H01L21/6715 ,  B08B3/04 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S118/90 ,  Y10S438/906 ,  Y10S438/913

摘要： A method for processing a semiconductor wafer or similar article includes the step of spinning the wafer and applying a fluid to a first side of the wafer, while it is spinning. The fluid flows radially outwardly in all directions, over the first side of the wafer, via centrifugal force. As the fluid flows off of the circumferential edge of the wafer, it is contained in an annular reservoir, so that the fluid also flows onto an outer annular area of the second side of the wafer. An opening allows fluid to flow out of the reservoir. The opening defines the location of a parting line beyond which the fluid will not travel on the second side of the wafer. An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The rotors are rotated by a spin motor. A processing fluid is introduced onto the top or bottom surface of the wafer, or onto both surfaces, at a central location. The fluid flows outwardly uniformly and in all directions. A wafer support automatically lifts the wafer, so that it can be removed from the reactor by a robot, when the rotors separate from each other after processing.

公开(公告)号：US20080029123A1

公开(公告)日：2008-02-07

申请号：US11461938

申请日：2006-08-02

申请人： Brian Aegerter ,  Nolan L. Zimmerman ,  Chris Lee Gentry ,  Kyle M. Hanson

发明人： Brian Aegerter ,  Nolan L. Zimmerman ,  Chris Lee Gentry ,  Kyle M. Hanson

IPC分类号： B08B3/12 ,  B08B7/00 ,  B08B3/00

CPC分类号： H01L21/67051

摘要： A workpiece processor has a process chamber for holding a liquid. A sonic element, such as a megasonic transducer, is positioned to provide sonic energy into the liquid. A workpiece holder is moveable from a first position, wherein a workpiece is held immersed in the liquid, for sonic processing, to a second position where the workpiece is generally aligned with spray nozzles. Process liquids and gases may be sprayed or otherwise provided onto the workpiece, optionally while the workpiece is rotating within the process chamber. A process chamber gas or vapor exhaust assembly prevents escape of process gases or vapors from the processor. The processor can provide both sonic processing, as well as liquid and/or gas chemical processing.

摘要翻译： 工件处理器具有用于保持液体的处理室。 定位声音元件，例如兆声换能器，以向液体提供声能。 工件保持器可从第一位置移动，其中将工件浸入液体中进行声波处理，其中工件通常与喷嘴对准。 处理液体和气体可以喷涂或以其他方式提供到工件上，任选地，当工件在处理室内旋转时。 处理室气体或蒸汽排气组件防止处理气体或蒸汽从处理器逸出。 处理器可以提供声音处理以及液体和/或气体化学处理。

公开(公告)号：US06900132B2

公开(公告)日：2005-05-31

申请号：US10691688

申请日：2003-10-22

申请人： Raymon F. Thompson ,  Jeffry A. Davis ,  Randy Harris ,  Dana R. Scranton ,  Ryan Pfeifle ,  Steven A. Peace ,  Brian Aegerter

发明人： Raymon F. Thompson ,  Jeffry A. Davis ,  Randy Harris ,  Dana R. Scranton ,  Ryan Pfeifle ,  Steven A. Peace ,  Brian Aegerter

IPC分类号： H01L21/00 ,  H01L21/3213 ,  H01L21/311

CPC分类号： H01L21/6715 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/6708 ,  Y10S438/913

摘要： A system for processing semiconductor wafers has process units on a deck of a frame. The process units and the deck have precision locating features, such as tapered pins, for precisely positioning the process units on the deck. Process units can be removed and replacement process units installed on the deck, without the need for recalibrating the load/unload robot. This reduces the time needed to replace process units and restart processing operations. Liquid chemical consumption during processing is reduced by drawing unused liquid out of supply lines and pumping it back to storage.

摘要翻译： 用于处理半导体晶片的系统在框架的台面上具有处理单元。 过程单元和甲板具有精确的定位特征，例如锥形销，用于将处理单元精确地定位在甲板上。 可以拆卸加工单元并安装在甲板上的更换过程单元，而无需重新校准装载/卸载机器人。 这减少了更换过程单元并重新启动处理操作所需的时间。 通过将未使用的液体从供应管线中抽出并将其抽回储存器来减少加工过程中的液体化学品消耗。