公开(公告)号：US09536848B2

公开(公告)日：2017-01-03

申请号：US14515969

申请日：2014-10-16

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Luke England ,  Christian Klewer

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L23/522

CPC classification number: H01L24/05 ,  H01L23/522 ,  H01L24/03 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/80 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/03011 ,  H01L2224/03616 ,  H01L2224/05551 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06133 ,  H01L2224/08121 ,  H01L2224/08123 ,  H01L2224/08145 ,  H01L2224/80013 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2224/80986 ,  H01L2224/94 ,  H01L2225/06527 ,  H01L2224/80001 ,  H01L2924/00014

Abstract: Methods for preparing 3D integrated semiconductor devices and the resulting devices are disclosed. Embodiments include forming a first and a second bond pad on a first and a second semiconductor device, respectively, the first and the second bond pads each having plural metal segments, the metal segments of the first bond pad having a configuration different from a configuration of the metal segments of the second bond pad or having the same configuration as a configuration of the metal segments of the second bond pad but rotated with respect to the second bond pad; and bonding the first and second semiconductor devices together through the first and second bond pads.

Abstract translation: 公开了用于制备3D集成半导体器件和所得到的器件的方法。 实施例包括分别在第一和第二半导体器件上形成第一和第二接合焊盘，第一和第二接合焊盘分别具有多个金属段，第一接合焊盘的金属段具有不同于 第二接合焊盘的金属段或者具有与第二接合焊盘的金属段的构造相同的配置，但是相对于第二接合焊盘旋转; 以及通过所述第一和第二接合焊盘将所述第一和第二半导体器件接合在一起。

公开(公告)号：US10068835B2

公开(公告)日：2018-09-04

申请号：US15461538

申请日：2017-03-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Christian Klewer

IPC: H01L21/768 ,  H01L23/48 ,  H01L29/06 ,  H01L23/532 ,  H01L23/528 ,  H01L29/78

Abstract: A method of forming a TSV isolation layer and a transistor-to-BEOL isolation layer during a single deposition process and the resulting device are disclosed. Embodiments include providing a gate stack, with source/drain regions at opposite sides thereof, and an STI layer on a silicon substrate; forming a TSV trench, laterally separated from the gate stack, through the STI layer and the silicon substrate; forming an isolation layer on sidewalls and a bottom surface of the TSV trench and over the gate stack, the STI layer, and the silicon substrate; forming a TSV in the TSV trench; forming a dielectric cap over the isolation layer and the TSV; and forming a source/drain contact through the dielectric cap and the isolation layer down to the source/drain contract regions.

公开(公告)号：US09570430B2

公开(公告)日：2017-02-14

申请号：US14709924

申请日：2015-05-12

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Frank Kuechenmeister ,  Christian Klewer ,  Jens Oswald

IPC: H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/31

CPC classification number: H01L25/50 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/03009 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/08147 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/48097 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81002 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/85002 ,  H01L2224/92127 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Articles including bonded metal structures and methods of preparing the same are provided herein. In an embodiment, a method of preparing an article that includes bonded metal structures includes providing a first substrate. A first metal structure and a second metal structure are formed on the first substrate. The first metal structure and the second metal structure each include an exposed contact surface. A bond mask is formed over the contact surface of the first metal structure. A second substrate is bonded to the first substrate through the exposed contact surface of the second metal structure. The bond mask remains disposed over the exposed contact surface of the second metal structure during bonding of the second substrate to the first substrate. A wire is bonded to the exposed contact surface of the first metal structure.

Abstract translation: 本文提供了包含粘结金属结构的物质及其制备方法。 在一个实施方案中，制备包含粘合金属结构的制品的方法包括提供第一基底。 在第一基板上形成第一金属结构和第二金属结构。 第一金属结构和第二金属结构各自包括暴露的接触表面。 在第一金属结构的接触表面上形成接合掩模。 第二衬底通过第二金属结构的暴露的接触表面结合到第一衬底。 在第二衬底与第一衬底接合期间，接合掩模保持设置在第二金属结构的暴露的接触表面上。 线接合到第一金属结构的暴露的接触表面。

公开(公告)号：US09659840B2

公开(公告)日：2017-05-23

申请号：US14186360

申请日：2014-02-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Christian Klewer

IPC: H01L21/76 ,  H01L23/48 ,  H01L21/768 ,  H01L29/772

CPC classification number: H01L23/481 ,  H01L21/76801 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/528 ,  H01L23/53238 ,  H01L29/0649 ,  H01L29/772 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a TSV isolation layer and a transistor-to-BEOL isolation layer during a single deposition process and the resulting device are disclosed. Embodiments include providing a gate stack, with source/drain regions at opposite sides thereof, and an STI layer on a silicon substrate; forming a TSV trench, laterally separated from the gate stack, through the STI layer and the silicon substrate; forming an isolation layer on sidewalls and a bottom surface of the TSV trench and over the gate stack, the STI layer, and the silicon substrate; forming a TSV in the TSV trench; forming a dielectric cap over the isolation layer and the TSV; and forming a source/drain contact through the dielectric cap and the isolation layer down to the source/drain contract regions.

公开(公告)号：US20150333035A1

公开(公告)日：2015-11-19

申请号：US14709924

申请日：2015-05-12

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Frank Kuechenmeister ,  Christian Klewer ,  Jens Oswald

IPC: H01L23/00

CPC classification number: H01L25/50 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/03009 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/08147 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/48097 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81002 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/85002 ,  H01L2224/92127 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Articles including bonded metal structures and methods of preparing the same are provided herein. In an embodiment, a method of preparing an article that includes bonded metal structures includes providing a first substrate. A first metal structure and a second metal structure are formed on the first substrate. The first metal structure and the second metal structure each include an exposed contact surface. A bond mask is formed over the contact surface of the first metal structure. A second substrate is bonded to the first substrate through the exposed contact surface of the second metal structure. The bond mask remains disposed over the exposed contact surface of the second metal structure during bonding of the second substrate to the first substrate. A wire is bonded to the exposed contact surface of the first metal structure.

Abstract translation: 本文提供了包含粘结金属结构的物质及其制备方法。 在一个实施方案中，制备包含粘合金属结构的制品的方法包括提供第一基底。 在第一基板上形成第一金属结构和第二金属结构。 第一金属结构和第二金属结构各自包括暴露的接触表面。 在第一金属结构的接触表面上形成接合掩模。 第二衬底通过第二金属结构的暴露的接触表面结合到第一衬底。 在第二衬底与第一衬底接合期间，接合掩模保持设置在第二金属结构的暴露的接触表面上。 线接合到第一金属结构的暴露的接触表面。