公开(公告)号：US20140264890A1

公开(公告)日：2014-09-18

申请号：US13834058

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES INC.

Inventor： Dirk Breuer ,  Frank Kuechenmeister ,  Jens Paul ,  Kashi Vishwanath Machani

IPC: H01L23/488 ,  H01L23/00

CPC classification number: H01L24/11 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/1146 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/207 ,  H01L2924/00

Abstract: One illustrative pillar disclosed herein includes a bond pad conductively coupled to an integrated circuit and a pillar comprising a base that is conductively coupled to the bond pad, wherein the base has a first lateral dimension, and an upper portion that is conductively coupled to the base, wherein the upper portion has a second lateral dimension that is less than the first lateral dimension. A method disclosed herein of forming a pillar includes forming a base such that it is conductively coupled to a bond pad on an integrated circuit product and, after forming the base, forming an upper portion such that it is conductively coupled to the base.

Abstract translation: 本文公开的一个说明性支柱包括导电耦合到集成电路的接合焊盘和包括导体耦合到接合焊盘的基座的支柱，其中基部具有第一横向尺寸，并且导电耦合到基座 ，其中所述上部具有小于所述第一横向尺寸的第二横向尺寸。 本文公开的形成柱的方法包括形成基底，使得其与集成电路产品上的接合焊盘导电耦合，并且在形成基底之后，形成上部，使得其与基底导电耦合。

公开(公告)号：US09570430B2

公开(公告)日：2017-02-14

申请号：US14709924

申请日：2015-05-12

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Frank Kuechenmeister ,  Christian Klewer ,  Jens Oswald

IPC: H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/31

CPC classification number: H01L25/50 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/03009 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/08147 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/48097 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81002 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/85002 ,  H01L2224/92127 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Articles including bonded metal structures and methods of preparing the same are provided herein. In an embodiment, a method of preparing an article that includes bonded metal structures includes providing a first substrate. A first metal structure and a second metal structure are formed on the first substrate. The first metal structure and the second metal structure each include an exposed contact surface. A bond mask is formed over the contact surface of the first metal structure. A second substrate is bonded to the first substrate through the exposed contact surface of the second metal structure. The bond mask remains disposed over the exposed contact surface of the second metal structure during bonding of the second substrate to the first substrate. A wire is bonded to the exposed contact surface of the first metal structure.

Abstract translation: 本文提供了包含粘结金属结构的物质及其制备方法。 在一个实施方案中，制备包含粘合金属结构的制品的方法包括提供第一基底。 在第一基板上形成第一金属结构和第二金属结构。 第一金属结构和第二金属结构各自包括暴露的接触表面。 在第一金属结构的接触表面上形成接合掩模。 第二衬底通过第二金属结构的暴露的接触表面结合到第一衬底。 在第二衬底与第一衬底接合期间，接合掩模保持设置在第二金属结构的暴露的接触表面上。 线接合到第一金属结构的暴露的接触表面。

公开(公告)号：US20140021604A1

公开(公告)日：2014-01-23

申请号：US14039726

申请日：2013-09-27

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Frank Kuechenmeister ,  Lothar Lehmann ,  Alexander Platz ,  Gotthard Jungnickel ,  Sven Kosgalwies

IPC: H01L23/498

CPC classification number: H01L23/49811 ,  H01L23/291 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03009 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2224/05552

Abstract: Disclosed herein is a device that includes first and second spaced-apart conductive pads positioned in a layer of insulating material, first and second under-bump metallization layers that are conductively coupled to the first and second conductive pads, respectively, and first and second spaced-apart conductive bumps that are conductively coupled to the first and second under-bump metallization layers, respectively. Additionally, the device includes, among other things, a passivation layer positioned above the layer of insulating material between the first and second spaced-apart conductive bumps, and a protective layer positioned on the passivation layer, wherein the protective layer extends between and contacts the first and second under-bump metallization layers, the material of the protective layer being one of silicon dioxide, silicon oxyfluoride (SiOF), silicon nitride (SiN), and silicone carbon nitride (SiCN).

Abstract translation: 本文公开了一种装置，其包括位于绝缘材料层中的第一和第二间隔开的导电焊盘，分别与第一和第二导电焊盘导电耦合的第一和第二凸块下金属化层，以及第一和第二间隔开的 分别导电地连接到第一和第二凸块下金属化层的导电凸块。 另外，该装置尤其包括位于第一和第二间隔开的导电凸块之间的绝缘材料层上方的钝化层和位于钝化层上的保护层，其中保护层在第一和第二间隔开的导电凸块之间延伸并且接触 第一和第二凸块下金属化层，保护层的材料是二氧化硅，氟氧化硅（SiOF），氮化硅（SiN）和硅氮化碳（SiCN）之一。

公开(公告)号：US09478489B2

公开(公告)日：2016-10-25

申请号：US14138881

申请日：2013-12-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Daniel Richter ,  Frank Kuechenmeister

IPC: H01L23/13 ,  H01L23/522 ,  H01L29/06 ,  H01L21/78 ,  H01L21/683 ,  H01L23/00

CPC classification number: H01L23/522 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The width of scribe lines may be reduced in semiconductor devices by applying a process technique in which trenches may be formed first from the rear side on the basis of a required width of the corresponding trenches, while subsequently it may be cut into the substrate from the front side on the basis of a reduced thickness of the corresponding saw blades, thereby also enabling a reduction of the scribe line width. Furthermore, contamination of the front side, i.e., of the metallization system, may be reduced, for instance, by performing an optional intermediate cleaning process.

Abstract translation: 可以通过施加一种工艺技术来减少划线的宽度，其中可以基于相应沟槽的所需宽度从后侧首先形成沟槽，然后可以从其中切割出衬底 基于相应锯片的厚度减小的前侧，从而也能够减少划线宽度。 此外，例如，通过执行任选的中间清洁处理，可以减少前侧，即金属化系统的污染。

公开(公告)号：US20150333035A1

公开(公告)日：2015-11-19

申请号：US14709924

申请日：2015-05-12

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Frank Kuechenmeister ,  Christian Klewer ,  Jens Oswald

IPC: H01L23/00

CPC classification number: H01L25/50 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/03009 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05572 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/08147 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/48097 ,  H01L2224/48227 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81002 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/85002 ,  H01L2224/92127 ,  H01L2224/94 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Articles including bonded metal structures and methods of preparing the same are provided herein. In an embodiment, a method of preparing an article that includes bonded metal structures includes providing a first substrate. A first metal structure and a second metal structure are formed on the first substrate. The first metal structure and the second metal structure each include an exposed contact surface. A bond mask is formed over the contact surface of the first metal structure. A second substrate is bonded to the first substrate through the exposed contact surface of the second metal structure. The bond mask remains disposed over the exposed contact surface of the second metal structure during bonding of the second substrate to the first substrate. A wire is bonded to the exposed contact surface of the first metal structure.

Abstract translation: 本文提供了包含粘结金属结构的物质及其制备方法。 在一个实施方案中，制备包含粘合金属结构的制品的方法包括提供第一基底。 在第一基板上形成第一金属结构和第二金属结构。 第一金属结构和第二金属结构各自包括暴露的接触表面。 在第一金属结构的接触表面上形成接合掩模。 第二衬底通过第二金属结构的暴露的接触表面结合到第一衬底。 在第二衬底与第一衬底接合期间，接合掩模保持设置在第二金属结构的暴露的接触表面上。 线接合到第一金属结构的暴露的接触表面。

公开(公告)号：US08957524B2

公开(公告)日：2015-02-17

申请号：US13834058

申请日：2013-03-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Dirk Breuer ,  Frank Kuechenmeister ,  Jens Paul ,  Kashi Vishwanath Machani

IPC: H01L23/488 ,  H01L23/00

CPC classification number: H01L24/11 ,  H01L23/3192 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05572 ,  H01L2224/1146 ,  H01L2224/11474 ,  H01L2224/11849 ,  H01L2224/11906 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/1308 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/12042 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/207 ,  H01L2924/00

Abstract: One illustrative pillar disclosed herein includes a bond pad conductively coupled to an integrated circuit and a pillar comprising a base that is conductively coupled to the bond pad, wherein the base has a first lateral dimension, and an upper portion that is conductively coupled to the base, wherein the upper portion has a second lateral dimension that is less than the first lateral dimension. A method disclosed herein of forming a pillar includes forming a base such that it is conductively coupled to a bond pad on an integrated circuit product and, after forming the base, forming an upper portion such that it is conductively coupled to the base.

Abstract translation: 本文公开的一个说明性支柱包括导电耦合到集成电路的接合焊盘和包括导体耦合到接合焊盘的基座的支柱，其中基部具有第一横向尺寸，并且导电耦合到基座 ，其中所述上部具有小于所述第一横向尺寸的第二横向尺寸。 本文公开的形成柱的方法包括形成基底，使得其与集成电路产品上的接合焊盘导电耦合，并且在形成基底之后，形成上部，使得其与基底导电耦合。

公开(公告)号：US20140110854A1

公开(公告)日：2014-04-24

申请号：US14138881

申请日：2013-12-23

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Daniel Richter ,  Frank Kuechenmeister

IPC: H01L23/522

CPC classification number: H01L23/522 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/13 ,  H01L24/16 ,  H01L24/48 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/81815 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The width of scribe lines may be reduced in semiconductor devices by applying a process technique in which trenches may be formed first from the rear side on the basis of a required width of the corresponding trenches, while subsequently it may be cut into the substrate from the front side on the basis of a reduced thickness of the corresponding saw blades, thereby also enabling a reduction of the scribe line width. Furthermore, contamination of the front side, i.e., of the metallization system, may be reduced, for instance, by performing an optional intermediate cleaning process.

Abstract translation: 可以通过施加一种工艺技术来减少划线的宽度，其中可以基于相应沟槽的所需宽度从后侧首先形成沟槽，然后可以从其中切割出衬底 基于相应锯片的厚度减小的前侧，从而也能够减少划线宽度。 此外，例如，通过执行任选的中间清洁处理，可以减少前侧，即金属化系统的污染。