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    Nonvolatile semiconductor memory device
    4.
    发明申请
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US20050151277A1

    公开(公告)日：2005-07-14

    申请号：US11035592

    申请日：2005-01-13

    申请人： Hidechika Kawazoe ,  Yukio Tamai ,  Atsushi Shimaoka ,  Naoto Hagiwara ,  Hidetoshi Masuda ,  Toshimasa Suzuki

    发明人： Hidechika Kawazoe ,  Yukio Tamai ,  Atsushi Shimaoka ,  Naoto Hagiwara ,  Hidetoshi Masuda ,  Toshimasa Suzuki

    IPC分类号： H01L27/105 ,  G11C13/00 ,  G11C16/02 ,  H01L27/115 ,  H01L27/24 ,  H01L45/00 ,  H01L27/11

    CPC分类号： H01L27/2436 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/78 ,  G11C2213/79 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1641

    摘要： A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.

    摘要翻译： 通过依次层叠下电极，可变电阻器和上电极来形成非易失性存储元件。 形成结晶性和非晶态混合的可变电阻器。 因此，形成非易失性存储元件。 更优选地，可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物， 在350℃至500℃的成膜温度下形成的可变电阻器。或者，可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜 并且将非晶化混合，然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内，在高于成膜温度的温度下进行退火处理。

    Nonvolatile semiconductor memory device
    5.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US07259387B2

    公开(公告)日：2007-08-21

    申请号：US11035592

    申请日：2005-01-13

    申请人： Hidechika Kawazoe ,  Yukio Tamai ,  Atsushi Shimaoka ,  Naoto Hagiwara ,  Hidetoshi Masuda ,  Toshimasa Suzuki

    发明人： Hidechika Kawazoe ,  Yukio Tamai ,  Atsushi Shimaoka ,  Naoto Hagiwara ,  Hidetoshi Masuda ,  Toshimasa Suzuki

    IPC分类号： H01L47/00

    CPC分类号： H01L27/2436 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/78 ,  G11C2213/79 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1641

    摘要： A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More preferably, the variable resistor is a praseodymium-calcium-manganese oxide represented by a general formula, Pr1-xCaxMnO3, that has been formed at a film forming temperature from 350° C. to 500° C. Alternatively, the variable resistor is formed as a film at a film forming temperature that allows the variable resistor to become of an amorphous state or a state where crystallinity and amorphism are mixed and, then, is subjected to an annealing process at a temperature higher than the film forming temperature, in a temperature range where the variable resistor can maintain the state where crystallinity and amorphism are mixed.

    摘要翻译： 通过依次层叠下电极，可变电阻器和上电极来形成非易失性存储元件。 形成结晶性和非晶态混合的可变电阻器。 因此，形成非易失性存储元件。 更优选地，可变电阻器是由通式为Pr 1-x M x MnO 3 N 3表示的镨 - 钙 - 锰氧化物， 在350℃至500℃的成膜温度下形成的可变电阻器。或者，可变电阻器以允许可变电阻器变为非晶态的成膜温度或结晶度的状态形成为膜 并且将非晶化混合，然后在可变电阻器可以保持结晶性和非晶态混合的状态的温度范围内，在高于成膜温度的温度下进行退火处理。

    Electrochemical device
    6.
    发明授权
    Electrochemical device 有权
    电化学装置

    公开(公告)号：US09023510B2

    公开(公告)日：2015-05-05

    申请号：US13635288

    申请日：2011-03-11

    申请人： Kyotaro Goto ,  Naoto Hagiwara ,  Yuki Kawai ,  Katsuei Ishida

    发明人： Kyotaro Goto ,  Naoto Hagiwara ,  Yuki Kawai ,  Katsuei Ishida

    IPC分类号： H01M2/02 ,  H01G11/22 ,  H01G11/08 ,  H01G11/78 ,  H01M2/06 ,  H01M2/10 ,  H01M10/04 ,  H01G11/82 ,  H01M2/22 ,  H01M10/0525 ,  H01M10/0583 ,  H01M10/42

    CPC分类号： H01M2/0277 ,  H01G11/08 ,  H01G11/22 ,  H01G11/78 ,  H01G11/82 ,  H01M2/021 ,  H01M2/0212 ,  H01M2/06 ,  H01M2/1094 ,  H01M2/22 ,  H01M10/0436 ,  H01M10/045 ,  H01M10/0525 ,  H01M10/0583 ,  H01M10/425 ,  Y02E60/13

    摘要： [Object] To provide an electrochemical device that permits a thin package, as well as securely prevents an electrolyte or gas in an internal space from leaking outside even when temperature rise occurs in the electrochemical device during the process where the electrochemical device is reflow soldered to a circuit board or encapsulated into an IC card.[Solution] In the electrochemical device RB1, the main body of the package PA includes first cover plate 15, first terminal plate 12, frame plate 14, second terminal plate 13, and second cover plate 16 stacked in this order and bonded at the facing surfaces. The electric storage element SD is encapsulated in internal space IS formed, between the cover plates 15, 16, by the through holes 12a1, 13a1 in the frame sections 12a, 13a of the terminal plates 12, 13 and the through hole 14a in the frame plate 14.

    摘要翻译： 本发明提供允许薄封装的电化学装置，并且即使在电化学装置回流焊接到电化学装置期间在电化学装置中发生温度上升时，也可以可靠地防止内部空间中的电解质或气体泄漏到外部 电路板或封装在IC卡中。 [解决方案]在电化学装置RB1中，封装PA的主体包括依次层叠的第一盖板15，第一端子板12，框架板14，第二端子板13和第二盖板16， 表面。 蓄电元件SD被封装在通过端子板12,13的框架部分12a，13a中的通孔12a1，13a1和框架中的通孔14a之间形成在盖板15,16之间的内部空间IS中 板14。

    ELECTROCHEMICAL DEVICE
    7.
    发明申请
    ELECTROCHEMICAL DEVICE 失效
    电化学装置

    公开(公告)号：US20110176254A1

    公开(公告)日：2011-07-21

    申请号：US13122139

    申请日：2009-09-30

    申请人： Kazushi Yawata ,  Naoto Hagiwara ,  Katsuei Ishida

    发明人： Kazushi Yawata ,  Naoto Hagiwara ,  Katsuei Ishida

    IPC分类号： H01G9/00

    CPC分类号： H01G9/0003 ,  H01G9/016 ,  H01G9/10 ,  H01G9/155 ,  H01G11/18 ,  H01G11/74 ,  H01G11/80 ,  H01M2/0212 ,  H01M2/06 ,  H01M2/30 ,  Y02E60/13

    摘要： Provided is an electrochemical device applicable to high-temperature reflow soldering wherein a lead-free solder is used. An electric double layer capacitor (10) is provided with a capacitor element (11), a package (14) having the capacitor element (11) sealed therein, and a positive electrode terminal (12) and a negative electrode terminal (13), each of which is led out from the capacitor element and is provided with a part sealed in the package (14) with the capacitor element and other part led out to the outside the package. On a part of the positive electrode terminal (12) and on a part of the negative electrode terminal (13), increased thermal resistance sections (HR1) for suppressing heat transfer to the capacitor element (11) via the terminals (12, 13) from other parts of the positive electrode terminal (12) and other parts of the negative electrode terminal (13) are arranged, respectively.

    摘要翻译： 提供了适用于使用无铅焊料的高温回流焊接的电化学装置。 双电层电容器（10）具有电容器元件（11），密封有电容器元件（11）的封装（14）和正极端子（12）和负极端子（13）， 其中的每一个从电容器元件引出并且设置有密封在封装（14）中的部分，电容器元件和其它部分被引出到封装的外部。 在正极端子（12）的一部分和负极端子（13）的一部分上，经由端子（12,13）抑制向电容器元件（11）的热传递的增加的热阻部（HR1） 从正极端子（12）的其他部分和负极端子（13）的其他部分分别配置。

    Electrochemical device
    9.
    发明授权
    Electrochemical device 失效
    电化学装置

    公开(公告)号：US08619409B2

    公开(公告)日：2013-12-31

    申请号：US13122139

    申请日：2009-09-30

    申请人： Kazushi Yawata ,  Naoto Hagiwara ,  Katsuei Ishida

    发明人： Kazushi Yawata ,  Naoto Hagiwara ,  Katsuei Ishida

    IPC分类号： H01G4/228 ,  H01G9/00 ,  H01G5/01 ,  H01G5/38 ,  H01G5/06 ,  H01M8/04 ,  H01M10/50

    CPC分类号： H01G9/0003 ,  H01G9/016 ,  H01G9/10 ,  H01G9/155 ,  H01G11/18 ,  H01G11/74 ,  H01G11/80 ,  H01M2/0212 ,  H01M2/06 ,  H01M2/30 ,  Y02E60/13

    摘要： An electrochemical device, e.g., an electric double layer capacitor, is applicable to high-temperature reflow soldering wherein a lead-free solder is used, and is provided with an electric storage element, a package having the electric storage element sealed therein, and a positive electrode terminal and a negative electrode terminal, each of which is led out from the electric storage element and is provided with a part sealed in the package with the electric storage element and other part led out to the outside the package. On a part of the positive electrode terminal and on a part of the negative electrode terminal, increased thermal resistance sections for suppressing heat transfer to the electric storage element via the terminals from other parts of the positive electrode terminal and other parts of the negative electrode terminal are arranged, respectively.

    摘要翻译： 诸如双电层电容器的电化学装置适用于使用无铅焊料的高温回流焊接，并且设置有蓄电元件，其中密封有蓄电元件的封装和 正极端子和负极端子，每个从蓄电元件引出，并且设置有封装在封装中的部分，其中蓄电元件和其它部分被引出到封装外部。 在正极端子的一部分和负极端子的一部分上，增加了用于抑制从正极端子的其他部分和负极端子的其他部分经由端子对蓄电元件的热传递的热阻部分 分别布置。