摘要:
A semiconductor device includes a first semiconductor package and a second semiconductor package which is mounted onto the first semiconductor package. The first semiconductor package has lands on an upper surface for mounting the second semiconductor package and lands on the lower surface for external connection, which are used for connection with a mounting substrate. The second semiconductor package has external leads which are connected to the lands for mounting the second semiconductor package.
摘要:
A semiconductor package includes an upper substrate having an opening portion, a solder ball for connection between substrates arranged on the lower side of the upper substrate, a lower substrate arranged on the further lower side and having an opening portion, a solder ball for external connection connected on the lower surface of the lower substrate, and a semiconductor chip affixed on each substrate. The semiconductor chip is electrically connected to the solder ball through the opening portion of each substrate. The solder ball for connection between substrates is electrically connected to the solder ball for external connection.
摘要:
The present invention relates to a compound represented by Formula [I]: wherein X is O, S, NH or CH2; Y1, Y2, Y3, Y4 and Y5, which may be identical or different, are each CH or N; however, at least one of Y1, Y2, Y3, Y4 and Y5 is N; Z1 and Z2, which may be identical or different, are each CH or N; n is an integer from 1 to 3; R1 is a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aliphatic heterocyclic ring or an aromatic heterocyclic ring, or a bicyclic aliphatic saturated hydrocarbon group; R2 and R3, which may be identical or different, are each a hydrogen atom, a lower alkyl group, a lower alkenyl group, a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aromatic heterocyclic ring, or the like; and R4 is a hydrogen atom, a lower alkyl group, a C3-C6 cycloalkyl group or the like, or a pharmaceutically acceptable salt or ester thereof, and a selective inhibitor against Cdk4 and/or Cdk6 or an anticancer agent containing the compound or a pharmaceutically acceptable salt or ester thereof.
摘要:
While a spectrum waveform of an output signal from a subtracter (207) is visibly monitored, an operator controls a variable phases shifter (208) based upon a second control signal (CL2) so that a shape of a spectrum waveform of an output signal from a subtracter (207) is approximated to a spectrum waveform of a desirable wave to change a phase of a local oscillation frequency signal from a local oscillator (206). As a result, a phase of a duplicated loop signal is changed. Also, the operator controls a variable attenuator (209) based upon a first control signal (CL1) so that a shape of this spectrum waveform is approximated to a spectrum waveform of a desirable wave (20) to change a signal level of the duplicated loop signal.
摘要:
A resin-sealed chip stack type semiconductor device comprises a substrate placed on many balls, a bottom chip to which wires are connected, a top chip to which wires are connected and mounted above the bottom chip, a non-conductive bonding layer which functions to bond and fix the two chips to each other, and a sealing resin which covers and protects all the components mounted on the substrate. The non-conductive bonding layer is provided by die bonding in such a manner that is at least covers the portion of the bottom chip where the corresponding wires are connected and does not allow generation of a gap between the two chips.
摘要:
A pad electrode is formed on a main surface of a semiconductor chip. A passivation film, which covers a surface portion of the pad electrode, is formed on the main surface of the semiconductor chip. An internal connection conductor is formed on a surface portion of the pad electrode. The semiconductor chip is covered with a molding resin which exposes only a top surface of the internal connection conductor. An external connection conductor is formed on a top surface of the internal connection conductor. The external connection conductor has a substantially flat top surface. Thereby, a plastic molded semiconductor package can be easily mounted on a printed board, and can have improved reliability after being joined on the printed board.
摘要:
A pad electrode is formed on a main surface of a semiconductor chip. A passivation film, which covers a surface portion of the pad electrode, is formed on the main surface of the semiconductor chip. An internal connection conductor is formed on a surface portion of the pad electrode. The semiconductor chip is covered with a molding resin which exposes only a top surface of the internal connection conductor. An external connection conductor is formed on a top surface of the internal connection conductor. The external connection conductor has a substantially flat top surface. Thereby, a plastic molded semiconductor package can be easily mounted on a printed board, and can have improved reliability after being joined on the printed board.
摘要:
An optoelectronic memory, logic, and interconnection device having an optical bistable circuit as an essential element. The optical bistable circuit includes an optical bistable switch which is a light emitting device and a first phototransistor detecting the light emitted from the light emitting device, connected in series, a second phototransistor connected in parallel to the optical bistable switch which does not detect the light emitted from the light emitting device, and a load resistor connected in series to the optical bistable switch. The optoelectronic memory, logic, and interconnection device operates as an optoelectronic memory device turned on and off with the same light source, as an optoelectronic logic device executing exclusive OR operation, or as a light source for reconfigurable optical interconnection.
摘要:
In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.
摘要:
A quinoxalinone derivative of the formula (I): or a pharmaceutically acceptable salt or ester thereof, wherein; X is NH, S or the like; Y is O or the like; the partial structure is, for example, the formula: B1, B2, . . . , Bn-1 and Bn, (in which n is 4, 5 or 6) are each independently CH, N or the like; B′1, B′2, . . . , B′n-1 and B′n (in which n is 4, 5 or 6) are each independently hydrogen or the like; and R is hydrogen, lower alkyl or the like.