摘要:
Disclosed are a highly reliable circuit board and a method of stably manufacturing the circuit board, wherein an insulator made from a specific organic insulating material is provided under a highly stressed conductor for preventing occurrence of cracks in the insulator. In addition, a method of correcting a wiring of a ceramic board is additionally adopted. The circuit board includes a thick film wiring board 1 having a first conductor pattern 2 and a thin film layer laminated on the first conductor pattern 2. The thin film layer includes a first insulator 5 on the first conductor pattern 2; a second insulator 10 on the first insulator 5; a second conductor pattern 8 formed on the first insulator 5 in such a manner as to partially pass through the first insulator 5 and to be electrically connected to the first conductor pattern 2; a wiring pattern 9 for circuit correction formed on the first insulator 5; and a third conductor pattern 11 passing through the first insulator 5 and the second insulator 10 and electrically connected to the second conductor pattern 8.
摘要:
A multilayer wiring system for preventing the generation of fixing failure due to an organic residue, eliminating an increase in the number of processes and reducing an area necessary for bonding of the cap and its fabrication method. The multilayer wiring board includes at least one wiring layer made of a conductor, at least one insulating layer made of an organic matter and a board. The wiring layer and the insulating layer are alternately laminated on the board and a cap is provided for covering the insulating layer and the wiring layer. The wiring layer has a wiring pattern for forming a wiring and a frame pattern for surrounding the wiring pattern. This frame pattern includes vent holes. The insulating layer has a shield structure made of an inorganic matter around the outer peripheral portion thereof and/or in the interior thereof. The shield structure is formed of the frame patterns continuously connected to each other and the cap is joined to an uppermost layer of the shield structure.
摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
摘要:
In the connecting apparatus for inspecting the semiconductor chip, in which contact terminals are electrically connected to each of the plurality of electrode pads formed on the semiconductor chips, a part of metal projections in the shape of quadrangular pyramid which constitute the contact terminals is composed of insulator in the present invention. Therefore, the inspection of semiconductor chips performed by simultaneously transmitting high-speed signals to the plurality of minute electrode pads arranged at a narrow pitch on the semiconductor chips can be realized.
摘要:
To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.
摘要:
To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.
摘要:
In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.
摘要:
A circuit substrate, such as a thermal printing head, having electrodes made of a material suitable for soldering. The electrode to be soldered, at least in part, is composed of an alloy of Ni and Cu, whose composition ranges from 65 mol % Ni - 35 mol % Cu to 75 mol % Ni - 25 mol % Cu.
摘要:
A semiconductor chip inspection apparatus largely reduces occurrence of damage due to foreign matter in an inspection process and improves durability at the same time of miniaturization is provided. As to a highly accurate thin-film probe sheet which performs: a contact to electrode pads arranged at a narrow pitch and a high density along with integration of semiconductor chip; and an inspection of semiconductor chips, by providing two layers of metal films selectively removable in a step-like shape in a periphery region of fine contact terminal having sharp tips and arranged at a high density and a narrow pitch at the same level as electrode pads, an upper periphery of the contact terminals is covered with an insulating film, and a large space region is formed.
摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.