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1.发明授权Energy device, method for manufacturing the same, and apparatus including the same 有权能量装置及其制造方法以及包括该能量装置的装置公开(公告)号：US08277967B2
公开(公告)日：2012-10-02
申请号：US12441504
申请日：2008-01-22
IPC分类号： H01M6/10
CPC分类号： H01M4/583 , H01G9/0029 , H01G11/26 , H01G11/36 , H01M4/0428 , H01M4/133 , H01M4/1393 , H01M4/587 , H01M4/62 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M10/0587 , Y02E60/13 , Y10T29/49115
摘要： The present invention provides an energy device including a carbon nanotube electrode which prevents a carbon nanotube from peeling from an electric conductor. The energy device includes rolled electrode bodies, wherein at least one of the electrode bodies is formed such that a carbon nanotube layer is formed on the electric conductor, and concave regions are formed in a stripe shape on the carbon nanotube layer so as to extend in a direction parallel to a roll axis.
摘要翻译： 本发明提供一种能量装置，其包括防止碳纳米管从导电体剥离的碳纳米管电极。 能量器件包括卷绕的电极体，其中至少一个电极体形成为在导电体上形成碳纳米管层，并且在碳纳米管层上形成条形状的凹陷区域，以便在 平行于辊轴的方向。
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2.发明申请ENERGY DEVICE, METHOD FOR MANUFACTURING THE SAME, AND APPARATUS INCLUDING THE SAME 有权能量装置，其制造方法以及包括其的装置公开(公告)号：US20100086837A1
公开(公告)日：2010-04-08
申请号：US12441504
申请日：2008-01-22
IPC分类号： H01M6/10
CPC分类号： H01M4/583 , H01G9/0029 , H01G11/26 , H01G11/36 , H01M4/0428 , H01M4/133 , H01M4/1393 , H01M4/587 , H01M4/62 , H01M4/661 , H01M4/667 , H01M10/0525 , H01M10/0587 , Y02E60/13 , Y10T29/49115
摘要： The present invention provides an energy device including a carbon nanotube electrode which prevents a carbon nanotube from peeling from an electric conductor. The energy device includes rolled electrode bodies, wherein at least one of the electrode bodies is formed such that a carbon nanotube layer is formed on the electric conductor, and concave regions are formed in a stripe shape on the carbon nanotube layer so as to extend in a direction parallel to a roll axis.
摘要翻译： 本发明提供一种能量装置，其包括防止碳纳米管从导电体剥离的碳纳米管电极。 能量器件包括卷绕的电极体，其中至少一个电极体形成为在导电体上形成碳纳米管层，并且在碳纳米管层上形成条形状的凹陷区域，以便在 平行于辊轴的方向。
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公开(公告)号：US20090317597A1
公开(公告)日：2009-12-24
申请号：US12520959
申请日：2008-01-16
CPC分类号： C25D11/02 , B01J23/745 , B01J23/8906 , B01J35/006 , B01J37/0226 , B01J37/0244 , B82Y30/00 , C25D11/04 , C25D11/045 , Y10T29/417 , Y10T29/49108 , Y10T29/49115 , Y10T428/1352 , Y10T428/2462
摘要： The present invention provides a nanostructure on an upper surface of which a small-diameter carbon nanotube (CNT) is formed and which improves an adhesive strength between a substrate and the CNT while controlling an orientation of the CNT, and a method for manufacturing the nanostructure. The nanostructure includes a substrate 101, a porous layer 102 formed on the substrate 101 to have a fine pore, a fine pore diameter control layer 103 formed on the porous layer 102, and a carbon nanotube 701 formed to extend from the fine pore defined by the fine pore diameter control layer 103, and one end of the carbon nanotube is fixed by the fine pore diameter control layer 103. It is preferable that the substrate 101 and the fine pore diameter control layer 103 be electrically conductive. It is preferable that the porous layer 102 be an anode oxide film. It is preferable that a melting point of the fine pore diameter control layer 103 be 600° C. or higher.
摘要翻译： 本发明提供了在上表面上形成小直径碳纳米管（CNT）的纳米结构，并且在控制CNT的取向的同时改善了基板和CNT之间的粘合强度，以及纳米结构的制造方法 。 纳米结构包括基板101，形成在基板101上的具有细孔的多孔层102，形成在多孔层102上的细孔径控制层103和形成为从由多孔层102限定的细孔延伸的细孔 微细孔径控制层103和碳纳米管的一端由细孔直径控制层103固定。优选的是，基板101和细孔直径控制层103是导电的。 多孔层102优选为阳极氧化膜。 优选细孔径控制层103的熔点为600℃以上。
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公开(公告)号：US08822000B2
公开(公告)日：2014-09-02
申请号：US12520959
申请日：2008-01-16
IPC分类号： H01M4/583 , H01M10/04 , B05D3/00 , B01J35/00 , B01J23/745 , B01J37/02 , B82Y30/00 , C25D11/02 , C25D11/04 , B01J23/89
CPC分类号： C25D11/02 , B01J23/745 , B01J23/8906 , B01J35/006 , B01J37/0226 , B01J37/0244 , B82Y30/00 , C25D11/04 , C25D11/045 , Y10T29/417 , Y10T29/49108 , Y10T29/49115 , Y10T428/1352 , Y10T428/2462
摘要： The present invention provides a nanostructure on an upper surface of which a small-diameter carbon nanotube (CNT) is formed and which improves an adhesive strength between a substrate and the CNT while controlling an orientation of the CNT, and a method for manufacturing the nanostructure. The nanostructure includes a substrate 101, a porous layer 102 formed on the substrate 101 to have a fine pore, a fine pore diameter control layer 103 formed on the porous layer 102, and a carbon nanotube 701 formed to extend from the fine pore defined by the fine pore diameter control layer 103, and one end of the carbon nanotube is fixed by the fine pore diameter control layer 103. It is preferable that the substrate 101 and the fine pore diameter control layer 103 be electrically conductive. It is preferable that the porous layer 102 be an anode oxide film. It is preferable that a melting point of the fine pore diameter control layer 103 be 600° C. or higher.
摘要翻译： 本发明提供了在上表面上形成小直径碳纳米管（CNT）的纳米结构，并且在控制CNT的取向的同时改善了基板和CNT之间的粘合强度，以及纳米结构的制造方法 。 纳米结构包括基板101，形成在基板101上的具有细孔的多孔层102，形成在多孔层102上的细孔径控制层103和形成为从由多孔层102限定的细孔延伸的细孔 微细孔径控制层103和碳纳米管的一端由细孔直径控制层103固定。优选的是，基板101和细孔直径控制层103是导电的。 多孔层102优选为阳极氧化膜。 优选细孔径控制层103的熔点为600℃以上。
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5.发明授权Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag 有权具有m面成角度半导体区域的氮化物半导体元件和包含Mg和Ag的电极公开(公告)号：US08933543B2
公开(公告)日：2015-01-13
申请号：US13503972
申请日：2011-03-15
IPC分类号： H01L33/16 , H01L21/02 , H01L33/40 , H01L23/532 , H01L33/00 , H01L33/32 , H01S5/042 , H01S5/32 , H01S5/323
CPC分类号： H01L21/02579 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L23/53247 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2224/13 , H01L2924/12032 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341 , H01L2924/00
摘要： A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 本发明的氮化物系半导体器件包括：氮化物系半导体多层结构体20，其具有p型半导体区域，表面12从m面倾斜不小于1°的角度， 超过5°; 以及设置在p型半导体区域上的电极30。 p型半导体区域由Al x In y Ga z N（其中x + y + z = 1，x≥0，y≥0和z≥0）层26形成。电极30包括Mg层32和Ag层34 设置在Mg层32上.Mg层32与半导体多层结构体20的p型半导体区域的表面12接触。
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公开(公告)号：US08729587B2
公开(公告)日：2014-05-20
申请号：US13596849
申请日：2012-08-28
申请人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
发明人： Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Ryou Kato
CPC分类号： H01L33/40 , B82Y20/00 , H01L29/045 , H01L33/0075 , H01L33/0079 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/32341
摘要： An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 示例性的基于氮化物的半导体器件包括：氮化物基半导体多层结构20，其具有p型GaN基半导体区域，其表面12从m面倾斜不小于1°的角度，而不是更多 超过5°或主表面具有多个m平面步骤; 以及布置在p型GaN基半导体区域上的电极30。 电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型GaN类半导体区域的表面12接触。
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7.发明授权Method for fabricating nitride-based semiconductor device having electrode on m-plane 有权一种在m面上具有电极的氮化物基半导体器件的制造方法公开(公告)号：US08334199B2
公开(公告)日：2012-12-18
申请号：US12937758
申请日：2010-03-17
IPC分类号： H01L21/3205
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译： 氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触 半导体多层结构20。
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公开(公告)号：US08306085B2
公开(公告)日：2012-11-06
申请号：US13234326
申请日：2011-09-16
IPC分类号： H01S5/10
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/78 , H01L33/0095 , H01S5/0202 , H01S5/22 , H01S5/2201 , Y10S148/028
摘要： The present invention is directed to a production method for a nitride compound semiconductor element including a substrate and a multilayer structure 40 supported by an upper face of the substrate. First, a wafer 1 to be split into individual substrates is provided. A plurality of semiconductor layers composing the multilayer structure 40 are grown on the wafer 1. By cleaving the wafer 1 and the semiconductor layers, a cleavage plane in the multilayer structure 40 is formed. In the present invention, a plurality of voids are arranged at positions in the multilayer structure at which a cleavage plane is to be formed. Thus, cleavage can be performed with a good yield.
摘要翻译： 本发明涉及一种氮化物化合物半导体元件的制造方法，所述氮化物化合物半导体元件包括由所述基板的上表面支撑的基板和多层结构体40。 首先，设置分割成各个基板的晶片1。 构成多层结构40的多个半导体层在晶片1上生长。通过切割晶片1和半导体层，形成多层结构40中的解理面。 在本发明中，在形成有解理面的多层结构体的位置配置多个空隙。 因此，可以以良好的产率进行裂解。
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公开(公告)号：US20110215340A1
公开(公告)日：2011-09-08
申请号：US13109213
申请日：2011-05-17
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。
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公开(公告)号：US20110037089A1
公开(公告)日：2011-02-17
申请号：US12937758
申请日：2010-03-17
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
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