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    OLIGONUCLEOTIDE PROBE AND USE THEREOF
    1.
    发明申请
    OLIGONUCLEOTIDE PROBE AND USE THEREOF 审中-公开
    寡核苷酸探针及其用途

    公开(公告)号：US20110229980A1

    公开(公告)日：2011-09-22

    申请号：US12982931

    申请日：2010-12-31

    申请人： Hiroyuki ASANUMA ,  Xingguo Liang ,  Hiromu Kashida ,  Yasuko Yoshida ,  Tomokazu Takase ,  Kousuke Niwa

    发明人： Hiroyuki ASANUMA ,  Xingguo Liang ,  Hiromu Kashida ,  Yasuko Yoshida ,  Tomokazu Takase ,  Kousuke Niwa

    IPC分类号： G01N33/53 ,  C07H21/00

    CPC分类号： C12Q1/6816 ,  C12Q2525/301 ,  C12Q2565/501

    摘要： The present teaching provides a fluorescent oligonucleotide probe having a high degree of design flexibility and wide applicability, as well as the use thereof. This is an oligonucleotide probe capable of forming a stem and loop, comprising at least one fluorophore located between adjacent nucleotides in the stem and is linked to a unit represented by Formula (1) and at least one quencher located at a site capable of pairing up with the at least one fluorophore located between the adjacent nucleotides in the stem and is linked to a unit represented by Formula (2). (In the formulae, X represents the fluorophore, Y represents the quencher, R1 represents an optionally substituted C2 or C3 alkylene chain, R2 represents an optionally substituted C0-2 alkylene chain, and Z represents a direct bond or linker.)

    摘要翻译： 本教导提供具有高设计灵活性和广泛适用性的荧光寡核苷酸探针及其用途。 这是能够形成茎和环的寡核苷酸探针，其包含位于茎中相邻核苷酸之间的至少一个荧光团，并连接到由式（1）表示的单元和位于能够配对的位点处的至少一个猝灭剂 其中所述至少一个荧光团位于茎中相邻核苷酸之间，并与由式（2）表示的单元连接。 （式中，X表示荧光团，Y表示猝灭剂，R 1表示任选取代的C 2或C 3亚烷基链，R 2表示任选取代的C 0-2亚烷基链，Z表示直接键或连接基。

    Nucleotide derivative and DNA microarray
    2.
    发明授权
    Nucleotide derivative and DNA microarray 有权
    核苷酸衍生物和DNA微阵列

    公开(公告)号：US07414117B2

    公开(公告)日：2008-08-19

    申请号：US10795436

    申请日：2004-03-09

    申请人： Isao Saito ,  Akimitsu Okamoto ,  Yoshio Saito ,  Yasuko Yoshida ,  Kousuke Niwa

    发明人： Isao Saito ,  Akimitsu Okamoto ,  Yoshio Saito ,  Yasuko Yoshida ,  Kousuke Niwa

    IPC分类号： C07H21/02 ,  C07H19/04 ,  C12Q1/68 ,  G01N33/53 ,  C07H21/00

    CPC分类号： C07H19/04 ,  C07H19/06 ,  C07H19/067 ,  C07H19/16 ,  C07H21/00 ,  C07H21/04 ,  C12Q1/6837 ,  Y10S436/809 ,  C12Q2565/549

    摘要： A novel nucleotide derivative, in case of existing as a member of a single-stranded sequence, undergoing a change in the fluorescent signal intendity depending on the corresponding base type in the partner strand with which the single-stranded sequence is hybridized, and which is a thymin/uracil derivative (1) emitting light most intensely when a confronting base in the partner strand with which the single-stranded nucleotide sequence is hybridized is adenine; a cytosine derivative (2) emitting light most intensely when the confronting base is guanine; an adenine derivative (3) emitting light most intensely when the confronting base is cytosine; a guanine derivative (4) emitting light most intensely when the confronting base is cytosine or thymine/uracil; and an adrnine derivative (5) emitting light most intensely when the confronting base is thymine/uracil/.

    摘要翻译： 在存在单链序列成员的情况下，新的核苷酸衍生物依赖于与单链序列杂交的伴侣链中的相应碱基类型而经历荧光信号意图的变化，并且其是 当与单链核苷酸序列杂交的伴侣链中的相对的碱基是腺嘌呤时，最强烈地发射光的甲氨喋呤/尿嘧啶衍生物（1） 当相对的碱是鸟嘌呤时，胞嘧啶衍生物（2）最强地发射光; 当面对的碱基是胞嘧啶时，腺苷衍生物（3）最强地发光; 当面对的碱基是胞嘧啶或胸腺嘧啶/尿嘧啶时，最强烈地发射光的鸟嘌呤衍生物（4） 和当相对底物是胸腺嘧啶/尿嘧啶时最强烈地发光的腺苷衍生物（5）。

    Nucleotide derivative and DNA microarray
    3.
    发明申请
    Nucleotide derivative and DNA microarray 有权
    核苷酸衍生物和DNA微阵列

    公开(公告)号：US20050059037A1

    公开(公告)日：2005-03-17

    申请号：US10795436

    申请日：2004-03-09

    申请人： Isao Saito ,  Akimitsu Okamoto ,  Yoshio Saito ,  Yasuko Yoshida ,  Kousuke Niwa

    发明人： Isao Saito ,  Akimitsu Okamoto ,  Yoshio Saito ,  Yasuko Yoshida ,  Kousuke Niwa

    IPC分类号： C07H19/04 ,  C07H19/067 ,  C07H21/00 ,  C07H21/04 ,  C12N15/09 ,  C12Q1/68 ,  G01N33/58

    CPC分类号： C07H19/04 ,  C07H19/06 ,  C07H19/067 ,  C07H19/16 ,  C07H21/00 ,  C07H21/04 ,  C12Q1/6837 ,  Y10S436/809 ,  C12Q2565/549

    摘要： A novel nucleotide derivative, in case of existing as a member of a single-stranded sequence, undergoing a change in the fluorescent signal intensity depending on the corresponding base type in the partner strand with which the single-stranded sequence is hybridized, and which is a thymine/uracil derivative (1) emitting light most intensely when a confronting base in the partner strand with which the single-stranded nucleotide sequence is hybridized is adenine; a cytosine derivative (2) emitting light most intensely when the confronting base is guanine; an adenine derivative (3) emitting light most intensely when the confronting base is cytosine; a guanine derivative (4) emitting light most intensely when the confronting base is cytosine or thymine/uracil; and an adenine derivative (5) emitting light most intensely when the confronting base is thymine/uracil.

    摘要翻译： 在存在单链序列成员的情况下，新的核苷酸衍生物根据与单链序列杂交的伴侣链中的相应碱基类型经历荧光信号强度的变化，并且其是 当与单链核苷酸序列杂交的伴侣链中的相对的碱基是腺嘌呤时，最强烈地发射光的胸腺嘧啶/尿嘧啶衍生物（1） 当相对的碱是鸟嘌呤时，胞嘧啶衍生物（2）最强地发射光; 当面对的碱基是胞嘧啶时，腺苷衍生物（3）最强地发光; 当面对的碱基是胞嘧啶或胸腺嘧啶/尿嘧啶时，最强烈地发射光的鸟嘌呤衍生物（4） 和当面对的碱是胸腺嘧啶/尿嘧啶时最强烈地发光的腺嘌呤衍生物（5）。

    Hybridization Device and Hybridization Method
    5.
    发明申请
    Hybridization Device and Hybridization Method 审中-公开
    杂交装置和杂交方法

    公开(公告)号：US20070238870A1

    公开(公告)日：2007-10-11

    申请号：US11572506

    申请日：2005-07-29

    申请人： Mitsuo Kawase ,  Yasuko Yoshida ,  Kazunari Yamada ,  Tomokazu Takase

    发明人： Mitsuo Kawase ,  Yasuko Yoshida ,  Kazunari Yamada ,  Tomokazu Takase

    IPC分类号： C12M1/00

    CPC分类号： B01L3/502746 ,  B01L3/502707 ,  B01L2300/0636 ,  B01L2300/0822 ,  B01L2300/0877 ,  B01L2300/0887 ,  B01L2300/165

    摘要： The hybridization device of the invention aims to attain a hybridization reaction of high reproducibility. A hybridization device 2 for a hybridization reaction of nucleic acid has a cover member 10 that defines a cavity 12, which includes a nucleic acid fixation area 6 of a substrate 4 for fixation of a nucleic acid probe and has capacity for storage of a liquid for the hybridization reaction therein. At least part of an area exposed to inside of the cavity 12 forms a hydrophobic region 18. Adequate control of the surface characteristic of the area exposed to the cavity for implementing the hybridization reaction desirably enhances the signal intensity and reduces a variation in signal intensity, thus attaining the hybridization reaction of high reproducibility.

    摘要翻译： 本发明的杂交装置旨在实现高再现性的杂交反应。 用于核酸杂交反应的杂交装置2具有限定空腔12的覆盖构件10，其包括用于固定核酸探针的基底4的核酸固定区域6，并且具有用于储存用于 其中的杂交反应。 暴露于空腔12内部的区域的至少一部分形成疏水区域18。 为了实现杂交反应，暴露于空腔的区域的表面特性的适当控制期望增强信号强度并降低信号强度的变化，从而实现高再现性的杂交反应。

    Manufacturing method of semiconductor device
    8.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07666728B2

    公开(公告)日：2010-02-23

    申请号：US12028593

    申请日：2008-02-08

    申请人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    发明人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/302

    CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842

    摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

    摘要翻译： 半导体器件的制造方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅电极和半导体区域; 进行退火以引起CoSi层与栅极电极和半导体区域之间的反应以形成CoSi 2层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。

    Manufacturing method of semiconductor device
    9.
    发明授权
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07348230B2

    公开(公告)日：2008-03-25

    申请号：US11008276

    申请日：2004-12-10

    申请人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    发明人： Shuji Matsuo ,  Katsuhiro Uchimura ,  Yasuko Yoshida ,  Kota Funayama ,  Yutaka Takeshima

    IPC分类号： H01L21/336

    CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/823814 ,  H01L21/823835 ,  H01L21/823842 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842

    摘要： A method of manufacture of a semiconductor device includes forming a gate insulating film and a gate electrode made of polycrystalline silicon over a semiconductor substrate; implanting ions into the semiconductor substrate to form a semiconductor region as a source or drain; forming a cobalt film and a titanium nitride film over the semiconductor substrate to cover the gate electrode; carrying out annealing to cause a reaction between Co and Si and the semiconductor region to form a CoSi layer; carrying out wet cleaning to remove the titanium nitride film and unreacted cobalt film to leave the CoSi layer over the gate electrode and semiconductor region; carrying out annealing to cause a reaction between the CoSi layer and the gate electrode and semiconductor region to form a CoSi2 layer; carrying out HPM cleaning; and forming over the semiconductor substrate a silicon nitride film by low-pressure CVD to cover the gate electrode.

    摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成栅极绝缘膜和由多晶硅制成的栅电极; 将离子注入到半导体衬底中以形成作为源极或漏极的半导体区域; 在所述半导体衬底上形成钴膜和氮化钛膜以覆盖所述栅电极; 进行退火以引起Co和Si之间的反应以及半导体区域以形成CoSi层; 进行湿式清洗以除去氮化钛膜和未反应的钴膜，使CoSi层离开栅极电极和半导体区域; 进行退火以引起CoSi层和栅极电极和半导体区域之间的反应以形成CoSi 2 O 3层; 进行HPM清洗; 以及通过低压CVD在半导体衬底上形成氮化硅膜以覆盖栅电极。