公开(公告)号：US08882971B2

公开(公告)日：2014-11-11

申请号：US12987828

申请日：2011-01-10

申请人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

发明人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki

IPC分类号： C23C14/06 ,  C23C14/34 ,  H01L33/00 ,  C23C14/54

CPC分类号： C23C14/34 ,  C23C14/0647 ,  C23C14/541 ,  H01L33/007

摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

摘要翻译： 溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。 基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。 目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。 溅射装置（1）包括用于加热基板（110）的加热器（65）。 通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。 还公开了使用溅射装置制造半导体发光元件的方法。

公开(公告)号：US20110084307A1

公开(公告)日：2011-04-14

申请号：US12996329

申请日：2009-06-03

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L33/40 ,  H01L33/32

CPC分类号： H01L21/02458 ,  C23C14/022 ,  C23C14/0617 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x

摘要翻译： 本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法 在基板（11）上层叠由III族氮化物构成的缓冲层（12）的n型半导体层（14）的发光装置，其特征在于，包括：基底层（14a），发光层 （15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0＆nlE; x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料 和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

公开(公告)号：US20100301379A1

公开(公告)日：2010-12-02

申请号：US12745304

申请日：2008-11-21

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/30 ,  H01L33/02 ,  C23C14/34

CPC分类号： C30B29/403 ,  C30B23/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/06 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

摘要翻译： 本发明的III族氮化物半导体的制造方法包括溅射工序，在基板和含Ga元素的靶的室中通过反应溅射法在基板上形成单晶III族氮化物半导体 其中所述溅射步骤包括各自的子步骤：在将衬底的温度设定为温度T1的同时进行III族氮化物半导体的成膜的第一溅射步骤; 以及在将衬底的温度降低到低于温度T1的温度T2的同时继续进行III族氮化物半导体的成膜的第二溅射步骤。

公开(公告)号：US20100219445A1

公开(公告)日：2010-09-02

申请号：US12680445

申请日：2008-09-09

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/30 ,  H01L33/00

CPC分类号： H01L33/12 ,  H01L33/025 ,  H01L33/06 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A buffer layer 12 composed of at least a Group III nitride compound is laminated on a substrate 11 composed of sapphire, and an n-type semiconductor layer 14, a light-emitting layer 15, and a p-type semiconductor layer 16 are laminated in a sequential manner on the buffer layer 12. The buffer layer 12 is formed by means of a reactive sputtering method, the buffer layer 12 contains oxygen, and the oxygen concentration in the buffer layer 12 is 1 atomic percent or lower. There are provided a Group III nitride compound semiconductor light-emitting device that comprises the buffer layer formed on the substrate by means of the reactive sputtering method, enables formation of a Group III nitride semiconductor having favorable crystallinity thereon, and has a superior light emission property, and a manufacturing method thereof, and a lamp.

摘要翻译： 在由蓝宝石构成的基板11上层叠由至少III族氮化物化合物构成的缓冲层12，并且将n型半导体层14，发光层15和p型半导体层16层叠在 缓冲层12的顺序方式。缓冲层12通过反应溅射法形成，缓冲层12含有氧，缓冲层12中的氧浓度为1原子％以下。 提供了通过反应溅射法形成在衬底上的缓冲层的III族氮化物化合物半导体发光器件，能够在其上形成具有良好结晶性的III族氮化物半导体，并且具有优异的发光特性 及其制造方法以及灯。

公开(公告)号：US20090146161A1

公开(公告)日：2009-06-11

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

公开(公告)号：US08765507B2

公开(公告)日：2014-07-01

申请号：US12745304

申请日：2008-11-21

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/04

CPC分类号： C30B29/403 ,  C30B23/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/06 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

摘要翻译： 本发明的III族氮化物半导体的制造方法包括溅射工序，在基板和含Ga元素的靶的室中通过反应溅射法在基板上形成单晶III族氮化物半导体 其中所述溅射步骤包括各自的子步骤：在将衬底的温度设定为温度T1的同时进行III族氮化物半导体的成膜的第一溅射步骤; 以及在将衬底的温度降低到低于温度T1的温度T2的同时继续进行III族氮化物半导体的成膜的第二溅射步骤。

公开(公告)号：US08669129B2

公开(公告)日：2014-03-11

申请号：US12996329

申请日：2009-06-03

申请人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

发明人： Hisayuki Miki ,  Yasunori Yokoyama ,  Takehiko Okabe ,  Kenzo Hanawa

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L21/02458 ,  C23C14/022 ,  C23C14/0617 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x

摘要翻译： 本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法 在基板（11）上层压由III族氮化物构成的缓冲层（12）的发光装置，包括基底层（14a）的发光层 （15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0 @ x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料 和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

公开(公告)号：US08383439B2

公开(公告)日：2013-02-26

申请号：US12257065

申请日：2008-10-23

申请人： Yasunori Yokoyama ,  Takehiko Okabe ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Takehiko Okabe ,  Hisayuki Miki

IPC分类号： H01L21/20

CPC分类号： H01L33/007 ,  C23C14/0078 ,  C23C14/0641 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate 11 using a sputtering method. The apparatus includes: a chamber 41; a target 47 that is arranged in the chamber 41 and includes a group-III element; a first plasma generating means 51 that generates a first plasma for sputtering the target 47 to supply raw material particles to the substrate 11; a second plasma generating means 52 that generates a second plasma including a nitrogen element; and a control means that controls the first plasma generating means 51 and the second plasma generating means 52 to alternately generate the first plasma and the second plasma in the chamber 41.

摘要翻译： 本发明提供一种具有高结晶度的III族氮化物半导体层的制造装置。 本发明的实施例提供一种使用溅射法在基板11上制造III族氮化物半导体层的装置。 该装置包括：室41; 设置在室41中并包括III族元件的靶47; 第一等离子体产生装置51，其产生用于溅射靶47以将原料颗粒供应到基板11的第一等离子体; 第二等离子体产生装置52，其产生包括氮元素的第二等离子体; 以及控制装置，其控制第一等离子体产生装置51和第二等离子体产生装置52，以在腔室41中交替地产生第一等离子体和第二等离子体。

公开(公告)号：US08106419B2

公开(公告)日：2012-01-31

申请号：US12377522

申请日：2007-11-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。

公开(公告)号：US20100065855A1

公开(公告)日：2010-03-18

申请号：US12513595

申请日：2007-12-05

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L33/12

CPC分类号： H01L33/007 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/181 ,  H01S5/0206 ,  H01S5/32341 ,  H01S2304/04 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device. The present invention provides a method of manufacturing a Group-III nitride semiconductor light-emitting device, comprising the steps of: activating a gas including a Group-V element and a metal material with plasma, thereby reacting the gas with the metal material; forming on a substrate an intermediate layer that is made of a Group-III nitride compound; and stacking an n-type semiconductor layer that is made of a Group-III nitride semiconductor, a light-emitting layer, and a p-type semiconductor layer, sequentially on the intermediate layer, wherein the Group-V element is nitrogen, the gas fraction of nitrogen in the gas is within a range of more than 20% to less than 99% during forming of the intermediate layer, and the intermediate layer is formed into a single crystal structure.

摘要翻译： 本发明的目的是提供一种制造高生产率的III族氮化物半导体发光器件的方法，并且能够制造具有优异的发光特性的器件; III族氮化物半导体发光器件; 以及使用该发光装置的灯。 本发明提供一种制造III族氮化物半导体发光器件的方法，包括以下步骤：用等离子体激活包括V族元素和金属材料的气体，从而使气体与金属材料反应; 在基板上形成由III族氮化物化合物制成的中间层; 并且在中间层上依次堆叠由III族氮化物半导体，发光层和p型半导体层制成的n型半导体层，其中V族元素为氮，气体 在形成中间层期间，气体中氮的分数在大于20％至小于99％的范围内，并且中间层形成为单晶结构。