Abstract:
A charged particle beam apparatus includes: a charged particle beam column; a detector configured to detect secondary charged particles; an image processor; a display device; a needle arranged in an irradiation area of charged particle beam; a needle actuator; a user interface; and a controller configured to control the needle actuator to actuate the needle in accordance with a target position that is set by the user interface. The controller controls the needle actuator to move the needle to track a change of the target position that is set by the user interface.
Abstract:
A composite charged particle beam apparatus includes a FIB column for irradiating a thin sample with a FIB and a GIB column for irradiating the thin sample with a GIB. The thin sample is placed on a sample stage, and a tilt unit tilts the thin sample about a tilt axis of the sample stage, the tilt axis being orthogonal to the FIB irradiation axis and being located inside a plane formed by the FIB irradiation axis and the GIB irradiation axis. A tilt sample holder is mounted on the sample stage and fixes the thin sample such that a cross-sectional surface of the thin sample is tilted at a constant angle with respect to the GIB irradiation axis and the azimuth angle of the GIB column can be changed by rotation of the sample stage.
Abstract:
A charged particle beam apparatus includes: an irradiation unit that irradiates a sample with a charged particle beam; an image formation section that detects a charged particle generated from the sample due to the irradiation with the charged particle beam and forms an image based on a signal obtained by detecting the charged particle; an input reception unit that receives an observation condition; a derivation section that derives second observation parameters proper for the observation condition based on the received observation condition and first observation parameters stored in a storage unit; and a control unit that controls the irradiation unit based on the second observation parameters.
Abstract:
A cross section processing method and a cross section processing apparatus are provided in which it is possible to form a flat cross section in a sample composed of a plurality of substances having different hardness by a focused ion beam. The etching of a processing area is performed while variably controlling the irradiation interval, the irradiation time, or the like of a focused ion beam based on cross section information of an SEM image obtained by the observation of a cross section. In this way, even if a sample is composed of a plurality of substances having different hardness, it is possible to form a flat observation surface with a uniform etching rate.
Abstract:
Disclosed are a charged particle beam apparatus and a sample processing observation method, the method including: a sample piece formation process in which a sample is irradiated with a focused ion beam such that a sample piece is cut out from the sample; a cross-section processing process in which the sample piece support holds the sample piece and a cross section thereof is irradiated with the ion beam to process the cross section; a sample piece approach movement process in which the sample piece support holds the sample piece and the sample piece is moved to a position that is closer to an electron beam column than an intersection point of beam optical axes of the ion beam and an electron beam is; and a SEM image acquisition process in which the cross section is irradiated with the electron beam to acquire the SEM image of the cross section.
Abstract:
A TEM sample preparation method including: placing a thin sample on a sample holder so that a first side surface of the thin sample which is closer to a desired observation target is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a thin film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the thin sample, to a region of the first side surface that is adjacent to the thin film portion; and performing the etching processing to a portion of the thin sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column.
Abstract:
A charged particle beam apparatus includes: a charged particle beam column configured to irradiate an irradiation target with a charged particle beam; a detector configured to detect secondary charged particles emitted from the irradiation target by the irradiation of the charged particle beam; a needle arranged in an irradiation area of the charged particle beam; a needle actuator configured to actuate the needle; and a controller configured to control the needle actuator to actuate the needle along a movement route that is configured by a preset target position and preset way points. The controller controls the needle actuator to set an actuating direction of the needle for each of the way points.
Abstract:
A sample preparation method is carried out using a focused ion beam and an electron beam. While displaying a SEM image of a first cross-section of a sample on a display screen, the first cross-section is subjected to etching processing by scanning and irradiation of the focused ion beam, thereby exposing a second cross-section, and while displaying a SEM image of the second cross-section on the display screen, the scanning direction of the focused ion beam is changed while performing scanning and irradiation of the focused ion beam and subjecting the second cross-section to etching processing, thereby exposing a desired cross-section of the sample.
Abstract:
Provided is a cross-section processing and observation apparatus, including a control portion for repeatedly executing a process including slice processing by an ion beam and acquisition of a SIM image by a secondary electron emitted from a cross-section formed by the slice processing, in which the control portion divides an observation image into a plurality of areas, and finishes the process when a change has occurred between an image in one area of the plurality of areas and an image in an area, which corresponds to the one area, of an observation image of another cross-section acquired by the process.
Abstract:
A focused ion beam apparatus includes: a focused ion beam tube configured to irradiate a focused ion beam onto a sample; a detector configured to detect secondary particles generated from the sample due to the irradiation and to output detection information regarding detected secondary particles; an image forming unit configured to form an observation image of the sample based on the detection information; a storage unit configured to store positional relation between a first processing area set on an observation image of a first sample and a cross-section surface of the first sample; and a processing area setting unit configured to automatically set a second processing area on an observation image of a second sample based on the positional relation stored in the storage unit and a position of a cross-section surface of the second sample on the observation image of the second sample.