公开(公告)号：US20160184926A1

公开(公告)日：2016-06-30

申请号：US14585404

申请日：2014-12-30

Applicant: SUSS MicroTec Photonic Systems Inc. ,  International Business Machines Corporation

Inventor： Courtney T. Sheets ,  Matthew E. Souter ,  Brian M. Erwin ,  Bouwe W. Leenstra ,  Nicholas A. Polomoff ,  Christopher L. Tessler

IPC: B23K26/06 ,  B23K26/362 ,  B23K26/40 ,  B23K26/03

CPC classification number: B23K26/0626 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/361 ,  B23K26/362 ,  B23K26/40 ,  B23K26/402

Abstract: An ablation system includes an ablation tool configured to generate an energy beam to ablate an energy-sensitive material formed on at least one embedded feature of a workpiece. The ablation tool selects an initial fluence and an initial pulse rate of the energy beam to ablate a first portion of the energy-sensitive layer. The ablation tool further reduces at least one of the initial fluence and the initial pulse rate of the energy beam to ablate a second remaining portion of the energy-sensitive layer such that the embedded feature is exposed without being damaged or deformed.

Abstract translation: 消融系统包括消融工具，其被配置为产生能量束以消融形成在工件的至少一个嵌入特征上的能量敏感材料。 消融工具选择能量束的初始注量和初始脉冲速率来消融能量敏感层的第一部分。 消融工具进一步减少能量束的初始注量和初始脉冲速率中的至少一个，以消除能量敏感层的第二剩余部分，使得嵌入特征被暴露而不被损坏或变形。

公开(公告)号：US09748135B2

公开(公告)日：2017-08-29

申请号：US14828608

申请日：2015-08-18

Applicant: International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

Inventor： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

公开(公告)号：US20150357235A1

公开(公告)日：2015-12-10

申请号：US14828608

申请日：2015-08-18

Applicant: International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

Inventor： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

公开(公告)号：US20140224860A1

公开(公告)日：2014-08-14

申请号：US13764254

申请日：2013-02-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Glen N. Biggs ,  Russell A. Budd ,  Benjamin V. Fasano ,  John J. Garant ,  Peter A. Gruber ,  John P. Karidis ,  Bouwe W. Leenstra ,  Phillip W. Palmatier ,  Kevin M. Prettyman ,  Christopher L. Tessler ,  Thomas Weiss

IPC: B23K3/06

CPC classification number: B23K3/0607 ,  B23K3/0638

Abstract: A fill head apparatus includes at least one chamber for holding a fluid. The chamber has an outlet for expelling the fluid. A vacuum device has an inlet for a suction device adjacent to the fluid outlet. A plurality of flexible and resilient sealing devices contact a top surface of a workpiece. The sealing devices are positioned on opposing sides of the chamber outlet and on opposing sides of the vacuum device inlet, such that the sealing devices create at least a partial seal around a cavity defined by the workpiece and the cavity is beneath both the chamber outlet and the vacuum outlet.

Abstract translation: 填充头装置包括用于保持流体的至少一个室。 该腔室具有排出流体的出口。 真空装置具有用于与流体出口相邻的抽吸装置的入口。 多个柔性和弹性密封装置接触工件的顶表面。 密封装置定位在室出口的相对侧和真空装置入口的相对侧上，使得密封装置在由工件限定的空腔周围产生至少一个局部密封，并且空腔位于室出口和 真空出口。

公开(公告)号：US20160204028A1

公开(公告)日：2016-07-14

申请号：US15072685

申请日：2016-03-17

Applicant: International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

Inventor： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

公开(公告)号：US20160074968A1

公开(公告)日：2016-03-17

申请号：US14483321

申请日：2014-09-11

Applicant: SUSS MicroTec Photonic Systems Inc. ,  International Business Machines Corporation

Inventor： Matthew E. Souter ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Christopher L. Tessler

IPC: B23K26/36 ,  B23K26/06 ,  G03F1/48 ,  B23K26/00

CPC classification number: B23K26/009 ,  B23K26/066 ,  B23K26/361 ,  B23K2103/56

Abstract: A laser etching system includes a laser source configured to generate a plurality of laser pulses during an etching pass. A workpiece is aligned with respect to the laser source. The workpiece includes an etching material that is etched in response to receiving the plurality of laser pulses. A mask reticle is interposed between the laser source and the workpiece. The mask reticle includes at least one mask pattern configured to regulate the fluence or a number of laser pulses realized by the workpiece such that a plurality of features having different depths with respect to one another are etched in the etching material.

Abstract translation: 激光蚀刻系统包括被配置为在蚀刻通过期间产生多个激光脉冲的激光源。 工件相对于激光源对准。 工件包括蚀刻材料，其被蚀刻以响应于接收多个激光脉冲。 掩模掩模布置在激光源和工件之间。 掩模掩模版包括至少一个掩模图案，其被配置为调节由工件实现的注量或多个激光脉冲，使得在蚀刻材料中蚀刻具有彼此不同深度的多个特征。

公开(公告)号：US09754823B2

公开(公告)日：2017-09-05

申请号：US14288840

申请日：2014-05-28

Applicant: International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

Inventor： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

公开(公告)号：US09278401B2

公开(公告)日：2016-03-08

申请号：US13764254

申请日：2013-02-11

Applicant: International Business Machines Corporation

Inventor： Glen N. Biggs ,  Russell A. Budd ,  Benjamin V. Fasano ,  John J. Garant ,  Peter A. Gruber ,  John P. Karidis ,  Bouwe W. Leenstra ,  Phillip W. Palmatier ,  Kevin M. Prettyman ,  Christopher L. Tessler ,  Thomas Weiss

IPC: B23K3/06

CPC classification number: B23K3/0607 ,  B23K3/0638

Abstract: A fill head apparatus includes at least one chamber for holding a fluid. The chamber has an outlet for expelling the fluid. A vacuum device has an inlet for a suction device adjacent to the fluid outlet. A plurality of flexible and resilient sealing devices contact a top surface of a workpiece. The sealing devices are positioned on opposing sides of the chamber outlet and on opposing sides of the vacuum device inlet, such that the sealing devices create at least a partial seal around a cavity defined by the workpiece and the cavity is beneath both the chamber outlet and the vacuum outlet.

Abstract translation: 填充头装置包括用于保持流体的至少一个室。 该腔室具有排出流体的出口。 真空装置具有用于与流体出口相邻的抽吸装置的入口。 多个柔性和弹性密封装置接触工件的顶表面。 密封装置定位在室出口的相对侧和真空装置入口的相对侧上，使得密封装置在由工件限定的空腔周围产生至少一个局部密封，并且空腔位于室出口和 真空出口。

公开(公告)号：US20150348831A1

公开(公告)日：2015-12-03

申请号：US14288840

申请日：2014-05-28

Applicant: International Business Machines Corporation ,  SUSS MicroTec Photonic Systems Inc.

Inventor： Yuri M. Brovman ,  Brian M. Erwin ,  Nicholas A. Polomoff ,  Jennifer D. Schuler ,  Matthew E. Souter ,  Christopher L. Tessler

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/76825 ,  H01L21/76837 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03614 ,  H01L2224/03632 ,  H01L2224/0381 ,  H01L2224/039 ,  H01L2224/0401 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/1182 ,  H01L2224/13007 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/13687 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/04941 ,  H01L2924/00012

Abstract: A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Abstract translation: 在衬底上选择性地定位阻挡层的方法包括在衬底的表面上形成阻挡层。 阻挡层由金属元素和非金属元素组成。 阻挡层也可以由金属元素和非金属元素形成。 该方法还包括在阻挡层上形成导电膜层，并在导电膜层中形成金属部分。 该方法还包括从电介质层选择性地烧蚀阻挡层的部分，以选择性地将阻挡层定位在衬底上。