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公开(公告)号：US20160204028A1
公开(公告)日：2016-07-14
申请号：US15072685
申请日：2016-03-17
发明人： Yuri M. Brovman , Brian M. Erwin , Nicholas A. Polomoff , Jennifer D. Schuler , Matthew E. Souter , Christopher L. Tessler
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , H01L21/76825 , H01L21/76837 , H01L21/7684 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76865 , H01L21/76877 , H01L21/76883 , H01L21/76885 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03614 , H01L2224/03632 , H01L2224/0381 , H01L2224/039 , H01L2224/0401 , H01L2224/05187 , H01L2224/05647 , H01L2224/1182 , H01L2224/13007 , H01L2224/13147 , H01L2224/13562 , H01L2224/13687 , H01L2924/00014 , H01L2924/04953 , H01L2924/04941 , H01L2924/00012
摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.
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2.发明申请公开(公告)号：US20160074968A1
公开(公告)日：2016-03-17
申请号：US14483321
申请日：2014-09-11
CPC分类号： B23K26/009 , B23K26/066 , B23K26/361 , B23K2103/56
摘要： A laser etching system includes a laser source configured to generate a plurality of laser pulses during an etching pass. A workpiece is aligned with respect to the laser source. The workpiece includes an etching material that is etched in response to receiving the plurality of laser pulses. A mask reticle is interposed between the laser source and the workpiece. The mask reticle includes at least one mask pattern configured to regulate the fluence or a number of laser pulses realized by the workpiece such that a plurality of features having different depths with respect to one another are etched in the etching material.
摘要翻译： 激光蚀刻系统包括被配置为在蚀刻通过期间产生多个激光脉冲的激光源。 工件相对于激光源对准。 工件包括蚀刻材料，其被蚀刻以响应于接收多个激光脉冲。 掩模掩模布置在激光源和工件之间。 掩模掩模版包括至少一个掩模图案，其被配置为调节由工件实现的注量或多个激光脉冲，使得在蚀刻材料中蚀刻具有彼此不同深度的多个特征。
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公开(公告)号：US09748135B2
公开(公告)日：2017-08-29
申请号：US14828608
申请日：2015-08-18
发明人： Yuri M. Brovman , Brian M. Erwin , Nicholas A. Polomoff , Jennifer D. Schuler , Matthew E. Souter , Christopher L. Tessler
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , H01L21/76825 , H01L21/76837 , H01L21/7684 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76865 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03614 , H01L2224/03632 , H01L2224/0381 , H01L2224/039 , H01L2224/0401 , H01L2224/05187 , H01L2224/05647 , H01L2224/1182 , H01L2224/13007 , H01L2224/13147 , H01L2224/13562 , H01L2224/13687 , H01L2924/00014 , H01L2924/04953 , H01L2924/04941 , H01L2924/00012
摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.
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公开(公告)号：US20150357235A1
公开(公告)日：2015-12-10
申请号：US14828608
申请日：2015-08-18
发明人： Yuri M. Brovman , Brian M. Erwin , Nicholas A. Polomoff , Jennifer D. Schuler , Matthew E. Souter , Christopher L. Tessler
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , H01L21/76825 , H01L21/76837 , H01L21/7684 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76865 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03614 , H01L2224/03632 , H01L2224/0381 , H01L2224/039 , H01L2224/0401 , H01L2224/05187 , H01L2224/05647 , H01L2224/1182 , H01L2224/13007 , H01L2224/13147 , H01L2224/13562 , H01L2224/13687 , H01L2924/00014 , H01L2924/04953 , H01L2924/04941 , H01L2924/00012
摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.
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公开(公告)号：US09754823B2
公开(公告)日：2017-09-05
申请号：US14288840
申请日：2014-05-28
发明人： Yuri M. Brovman , Brian M. Erwin , Nicholas A. Polomoff , Jennifer D. Schuler , Matthew E. Souter , Christopher L. Tessler
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , H01L21/76825 , H01L21/76837 , H01L21/7684 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76865 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03614 , H01L2224/03632 , H01L2224/0381 , H01L2224/039 , H01L2224/0401 , H01L2224/05187 , H01L2224/05647 , H01L2224/1182 , H01L2224/13007 , H01L2224/13147 , H01L2224/13562 , H01L2224/13687 , H01L2924/00014 , H01L2924/04953 , H01L2924/04941 , H01L2924/00012
摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.
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公开(公告)号：US20150348831A1
公开(公告)日：2015-12-03
申请号：US14288840
申请日：2014-05-28
发明人： Yuri M. Brovman , Brian M. Erwin , Nicholas A. Polomoff , Jennifer D. Schuler , Matthew E. Souter , Christopher L. Tessler
IPC分类号： H01L21/768
CPC分类号： H01L21/76841 , H01L21/76825 , H01L21/76837 , H01L21/7684 , H01L21/76849 , H01L21/7685 , H01L21/76852 , H01L21/76865 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03614 , H01L2224/03632 , H01L2224/0381 , H01L2224/039 , H01L2224/0401 , H01L2224/05187 , H01L2224/05647 , H01L2224/1182 , H01L2224/13007 , H01L2224/13147 , H01L2224/13562 , H01L2224/13687 , H01L2924/00014 , H01L2924/04953 , H01L2924/04941 , H01L2924/00012
摘要： A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.
摘要翻译： 在衬底上选择性地定位阻挡层的方法包括在衬底的表面上形成阻挡层。 阻挡层由金属元素和非金属元素组成。 阻挡层也可以由金属元素和非金属元素形成。 该方法还包括在阻挡层上形成导电膜层，并在导电膜层中形成金属部分。 该方法还包括从电介质层选择性地烧蚀阻挡层的部分，以选择性地将阻挡层定位在衬底上。
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7.发明申请LASER ABLATION SYSTEM INCLUDING VARIABLE ENERGY BEAM TO MINIMIZE ETCH-STOP MATERIAL DAMAGE 审中-公开包括可变能量光束在内的激光雷达系统，以最小化灭火材料损伤公开(公告)号：US20160184926A1
公开(公告)日：2016-06-30
申请号：US14585404
申请日：2014-12-30
发明人： Courtney T. Sheets , Matthew E. Souter , Brian M. Erwin , Bouwe W. Leenstra , Nicholas A. Polomoff , Christopher L. Tessler
IPC分类号： B23K26/06 , B23K26/362 , B23K26/40 , B23K26/03
CPC分类号： B23K26/0626 , B23K26/0622 , B23K26/066 , B23K26/361 , B23K26/362 , B23K26/40 , B23K26/402
摘要： An ablation system includes an ablation tool configured to generate an energy beam to ablate an energy-sensitive material formed on at least one embedded feature of a workpiece. The ablation tool selects an initial fluence and an initial pulse rate of the energy beam to ablate a first portion of the energy-sensitive layer. The ablation tool further reduces at least one of the initial fluence and the initial pulse rate of the energy beam to ablate a second remaining portion of the energy-sensitive layer such that the embedded feature is exposed without being damaged or deformed.
摘要翻译： 消融系统包括消融工具，其被配置为产生能量束以消融形成在工件的至少一个嵌入特征上的能量敏感材料。 消融工具选择能量束的初始注量和初始脉冲速率来消融能量敏感层的第一部分。 消融工具进一步减少能量束的初始注量和初始脉冲速率中的至少一个，以消除能量敏感层的第二剩余部分，使得嵌入特征被暴露而不被损坏或变形。
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公开(公告)号：US11009545B2
公开(公告)日：2021-05-18
申请号：US16816841
申请日：2020-03-12
摘要： An integrated circuit (IC) device tester includes contact probes. A liner is formed upon the contact probes. The liner includes a matrix of metal particles and glass particles. The metal particles of the liner allow the contact probe to pass an electrical current through the liner. The glass particles of the liner prevent C4 material from adhering to the liner.
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公开(公告)号：US20190148283A1
公开(公告)日：2019-05-16
申请号：US16248013
申请日：2019-01-15
IPC分类号： H01L23/498 , H01L21/48 , H01L23/31 , H01L21/56
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/4857 , H01L21/563 , H01L23/13 , H01L23/3185 , H01L23/49822 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/16 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81815 , H01L2224/83385 , H01L2224/92125 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15313 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3511 , H01L2924/014 , H01L2924/00014 , H01L2924/00
摘要： A module includes a laminate, the laminate including a solder mask layer and at least one depression in an upper surface of the solder mask layer that does not pass all of the way through the solder mask layer. The module also includes a first electronic element disposed in a first of the at least one depressions.
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10.发明申请公开(公告)号：US20180076160A1
公开(公告)日：2018-03-15
申请号：US15813311
申请日：2017-11-15
IPC分类号： H01L23/00
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03632 , H01L2224/0381 , H01L2224/0382 , H01L2224/04105 , H01L2224/05647 , H01L2224/11009 , H01L2224/11632 , H01L2224/1181 , H01L2224/1182 , H01L2224/131 , H01L2224/13147 , H01L2224/13686 , H01L2924/05042 , H01L2924/00014 , H01L2924/014 , H01L2924/01029 , H01L2924/053
摘要： A semiconductor structure includes an electrically conductive structure formed upon an uppermost organic layer of a semiconductor substrate. A capping layer is formed upon the uppermost organic layer covering the electrically conductive structure. A maskless selective removal lasering technique ejects portions of the capping layer while retaining the portion of the capping layer covering the electrically conductive structure. Portions of the capping layer are ejected from the uppermost organic layer by a shockwave as a result of the laser beam vaporizing the uppermost organic layer of the semiconductor substrate. Portions of the capping layer contacting the electrically conductive structure are retained by the conductive structure dissipating heat from the laser that would otherwise vaporize the uppermost organic layer of the semiconductor substrate.
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