Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor
    9.
    发明申请
    Integrated high voltage capacitor having capacitance uniformity structures and a method of manufacture therefor 有权
    具有电容均匀结构的集成高压电容器及其制造方法

    公开(公告)号:US20060189089A1

    公开(公告)日:2006-08-24

    申请号:US11250047

    申请日:2005-10-13

    IPC分类号: H02M3/335 H01L21/20 H01L29/00

    摘要: The present invention provides an integrated high voltage capacitor, a method of manufacture therefore, and an integrated circuit chip including the same. The integrated high voltage capacitor, among other features, includes a first capacitor plate (120) located over or in a semiconductor substrate (105), and an insulator (130) located over the first capacitor plate (120), at least a portion of the insulator (130) comprising an interlevel dielectric layer (135, 138, 143, or 148). The integrated high voltage capacitor further includes capacitance uniformity structures (910) located at least partially within the insulator (130) and a second capacitor plate (160) located over the insulator (130).

    摘要翻译: 本发明提供一种集成的高压电容器,因此制造方法以及包括该高压电容器的集成电路芯片。 集成的高压电容器以及其它特征包括位于半导体衬底(105)上方或半导体衬底(105)中的第一电容器板(120)和位于第一电容器板(120)上方的绝缘体(130),至少一部分 所述绝缘体(130)包括层间介电层(135,138,143或148)。 集成高压电容器还包括至少部分位于绝缘体(130)内的电容均匀性结构(910)和位于绝缘体(130)上方的第二电容器板(160)。