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53 条记录 (耗时 0.025 秒)

    Flexible interconnections with dual-metal dual-stud structure
    1.
    发明授权
    Flexible interconnections with dual-metal dual-stud structure 失效
    双金属双螺柱结构的柔性互连

    公开(公告)号：US06426544B1

    公开(公告)日：2002-07-30

    申请号：US09351440

    申请日：1999-07-12

    申请人： James G. Ryan ,  Badih El-Kareh

    发明人： James G. Ryan ,  Badih El-Kareh

    IPC分类号： H01L2900

    CPC分类号： H01L28/40 ,  H01L21/76838 ,  H01L23/5223 ,  H01L23/53223 ,  H01L23/53228 ,  H01L2924/0002 ,  Y10S438/957 ,  H01L2924/00

    摘要： A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/CuAlSi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric.

    摘要翻译： 具有高导电性和高金属迁移破坏性的金属互连由两层金属或合金（例如TI / CuAlSi）形成，其中介电介质介于两者之间，并且通过导电材料形成在该层之间的连接，优选在 在互连的端部形成在层间电介质的孔中的插头或螺柱的形式。 通过与每个层形成单独的连接，可以从相同的层形成高精度的金属 - 金属电容器。 互连（和电容器）的形状具有降低的严重性，并且有助于覆盖层间电介质的平坦化。

    Capacitor charging sensor
    2.
    发明授权
    Capacitor charging sensor 失效
    电容充电传感器

    公开(公告)号：US06144037A

    公开(公告)日：2000-11-07

    申请号：US99602

    申请日：1998-06-18

    申请人： James G. Ryan ,  Badih El-Kareh ,  Auguste B. El-Kareh

    发明人： James G. Ryan ,  Badih El-Kareh ,  Auguste B. El-Kareh

    IPC分类号： G01Q70/00 ,  H01J37/02 ,  H01J37/304

    CPC分类号： H01J37/304 ,  H01J37/026 ,  H01J2237/244

    摘要： A system for detecting charge accumulation during semiconductor wafer manufacturing including a sensor comprising a capacitor, an emitter for directing a primary electron beam toward the sensor, wherein the primary electron beam causes the sensor to emit secondary electrons and a detector for measuring the secondary electrons.

    摘要翻译： 一种用于检测半导体晶片制造期间的电荷累积的系统，包括：传感器，包括电容器，用于将一次电子束朝向传感器引导的发射器，其中所述一次电子束使所述传感器发射二次电子;以及用于测量所述二次电子的检测器。

    Method of making flexible interconnections with dual-metal-dual-stud structure
    3.
    发明授权
    Method of making flexible interconnections with dual-metal-dual-stud structure 失效
    使用双金属双螺柱结构制作柔性互连的方法

    公开(公告)号：US5972788A

    公开(公告)日：1999-10-26

    申请号：US651772

    申请日：1996-05-22

    申请人： James G. Ryan ,  Badih El-Kareh

    发明人： James G. Ryan ,  Badih El-Kareh

    IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04 ,  H01L27/108 ,  H01L21/4763

    CPC分类号： H01L28/40 ,  H01L21/76838 ,  H01L23/5223 ,  H01L23/53223 ,  H01L23/53228 ,  H01L2924/0002 ,  Y10S438/957

    摘要： A metal interconnect having a high conductivity and high resistance to metal migration failure is formed of two layers of metal or alloy (such as TI/CuAlSi) with a dielectric interposed therebetween and a connection made between the layers by a conductive material, preferably in the form of a plug or stud formed in an aperture of an inter-level dielectric, at ends of the interconnect. A high precision metal-to-metal capacitor can be formed from the same layers by forming separate connections to each of the layers. The topography of the interconnect (and capacitor) is of reduced severity and facilitates planarization of an overlying inter-level dielectric.

    摘要翻译： 具有高导电性和高金属迁移破坏性的金属互连由两层金属或合金（例如TI / CuAlSi）形成，其中介电介质介于两者之间，并且通过导电材料形成在该层之间的连接，优选在 在互连的端部形成在层间电介质的孔中的插头或螺柱的形式。 通过与每个层形成单独的连接，可以从相同的层形成高精度的金属 - 金属电容器。 互连（和电容器）的形状具有降低的严重性，并且有助于覆盖层间电介质的平坦化。

    Digital hearing aid system
    6.
    发明授权
    Digital hearing aid system 有权
    数字助听器系统

    公开(公告)号：US07433481B2

    公开(公告)日：2008-10-07

    申请号：US11150896

    申请日：2005-06-13

    申请人： Stephen W. Armstrong ,  Frederick E. Sykes ,  David R. Brown ,  James G. Ryan

    发明人： Stephen W. Armstrong ,  Frederick E. Sykes ,  David R. Brown ,  James G. Ryan

    IPC分类号： H04R25/00

    CPC分类号： H04R25/407 ,  H04R25/356 ,  H04R25/453 ,  H04R25/505 ,  H04R2225/43 ,  H04R2460/05

    摘要： A digital hearing aid is provided that includes front and rear microphones, a sound processor, and a speaker. Embodiments of the digital hearing aid include an occlusion subsystem, and a directional processor and headroom expander. The front microphone receives a front microphone acoustical signal and generates a front microphone analog signal. The rear microphone receives a rear microphone acoustical signal and generates a rear microphone analog signal. The front and rear microphone analog signals are converted into the digital domain, and at least the front microphone signal is coupled to the sound processor. The sound processor selectively modifies the signal characteristics and generates a processed signal. The processed signal is coupled to the speaker which converts the signal to an acoustical hearing aid output signal that is directed into the ear canal of the digital hearing aid user. The occlusion sub-system compensates for the amplification of the digital hearing aid user's own voice within the ear canal. The directional processor and headroom expander optimizes the gain applied to the acoustical signals received by the digital hearing aid and combine the amplified signals into a directionally-sensitive response.

    摘要翻译： 提供了一种数字助听器，包括前置和后置麦克风，声音处理器和扬声器。 数字助听器的实施例包括遮挡子系统以及定向处理器和净空扩展器。 前麦克风接收前麦克风声信号并产生前麦克风模拟信号。 后麦克风接收后麦克风声音信号并产生后麦克风模拟信号。 前和后麦克风模拟信号被转换成数字域，并且至少前麦克风信号耦合到声音处理器。 声音处理器选择性地修改信号特性并产生处理的信号。 经处理的信号耦合到扬声器，扬声器将该信号转换成被引导到数字助听器用户的耳道中的声学助听器输出信号。 闭塞子系统补偿耳道内数字助听器用户自己的声音的放大。 定向处理器和净空扩展器优化了应用于由数字助听器接收的声学信号的增益，并将放大的信号组合成方向敏感的响应。

    Method for fabricating a scanning probe microscope probe
    7.
    发明授权
    Method for fabricating a scanning probe microscope probe 失效
    扫描探针显微镜探针的制造方法

    公开(公告)号：US06656369B2

    公开(公告)日：2003-12-02

    申请号：US10053314

    申请日：2002-01-17

    申请人： Mahadevaiyer Krishnan ,  Mark E. Lagus ,  Kevin S. Petrarca ,  James G. Ryan ,  Richard P. Volant

    发明人： Mahadevaiyer Krishnan ,  Mark E. Lagus ,  Kevin S. Petrarca ,  James G. Ryan ,  Richard P. Volant

    IPC分类号： B44C122

    CPC分类号： G01Q70/16

    摘要： A scanning probe microscope probe is formed by depositing probe material in a mold that has a cavity in a shape and of a size of the desired form of the scanning probe microscope probe that is being fabricated. In the preferred embodiment, the cavity is formed by lithographically defining, in the body of the mold, the shape and the size of the desired scanning probe microscope probe and etching the body of the mold to form the cavity. Prior to depositing the probe material in the cavity in the mold, the cavity is lined with a release layer which, upon activation after the probe has been formed, permits removal of the probe.

    摘要翻译： 扫描探针显微镜探针通过将探针材料沉积在具有正在制造的扫描探针显微镜探针的所需形状和尺寸的空腔的模具中而形成。 在优选实施例中，通过在模具主体中光刻地限定所需扫描探针显微镜探针的形状和尺寸并蚀刻模具主体以形成空腔而形成空腔。 在将探针材料沉积在模具中的空腔中之前，空腔内衬有释放层，其在探针已经形成之后激活，允许去除探针。

    Method of making epitaxial cobalt silicide using a thin metal underlayer
    9.
    发明授权
    Method of making epitaxial cobalt silicide using a thin metal underlayer 失效
    使用薄金属底层制造外延钴硅化物的方法

    公开(公告)号：US5356837A

    公开(公告)日：1994-10-18

    申请号：US145429

    申请日：1993-10-29

    申请人： Peter J. Geiss ,  Thomas J. Licata ,  Herbert L. Ho ,  James G. Ryan

    发明人： Peter J. Geiss ,  Thomas J. Licata ,  Herbert L. Ho ,  James G. Ryan

    IPC分类号： H01L21/28 ,  C30B1/00 ,  H01L21/223 ,  H01L21/225 ,  H01L21/285 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/44

    CPC分类号： H01L21/28518 ,  C30B1/00 ,  C30B29/10 ,  H01L21/2257

    摘要： An epitaxial cobalt silicide film is formed using a thin metal underlayer, which is placed underneath a cobalt layer prior to a heating step which forms the silicide film. More specifically, a refractory metal layer comprising tungsten, chromium, molybdenum, or a silicide thereof, is formed overlying a silicon substrate on a semiconductor wafer. A cobalt layer is formed overlying the refractory metal layer. Next, the wafer is annealed at a temperature sufficiently high to form an epitaxial cobalt silicide film overlying the silicon substrate. Following this annealing step, a cobalt-silicon-refractory metal alloy remains overlying the epitaxial cobalt silicide film. This silicide is then used to form a shallow P-N junction by dopant out-diffusion. First, either a P or N-type dopant is implanted into the silicide film so that substantially none of the dopant is implanted into the underlying silicon substrate. After implanting, the dopant is out-diffused from the silicide film into the underlying silicon substrate at a drive temperature sufficiently high to form the desired P-N junction.

    摘要翻译： 使用薄金属底层形成外延钴硅化物膜，该金属底层在形成硅化物膜的加热步骤之前放置在钴层下方。 更具体地，在半导体晶片上的硅衬底上形成包含钨，铬，钼或其硅化物的难熔金属层。 形成覆盖难熔金属层的钴层。 接下来，将晶片在足够高的温度下退火以形成覆盖硅衬底的外延钴硅化物膜。 在该退火步骤之后，钴 - 硅 - 难熔金属合金保留在外延钴硅化物膜上。 然后将该硅化物用于通过掺杂剂外扩散形成浅P-N结。 首先，将P或N型掺杂剂注入到硅化物膜中，使得基本上没有掺杂剂注入到下面的硅衬底中。 在植入之后，掺杂剂在足够高的驱动温度下从硅化物薄膜扩散到下面的硅衬底中以形成所需的P-N结。