Wafer coating and singulation method
    4.
    发明授权
    Wafer coating and singulation method 有权
    晶圆涂层和切片方法

    公开(公告)号:US06649445B1

    公开(公告)日:2003-11-18

    申请号:US10241265

    申请日:2002-09-11

    IPC分类号: H01L2144

    摘要: A method for providing an underfill material on an integrated circuit chip at the wafer level. The wafer (10) typically contains one or more integrated circuit chips (12), and each integrated circuit chip typically has a plurality of solder bumps (34) on its active surface. The wafer is first diced (22) on the active surface side to form channels (38) that will ultimately define the edges (39) of each individual integrated circuit chip, the dicing being of such a depth that it only cuts part-way through the wafer. The front side (36) of the wafer is then coated (24) with an underfill material (40). Generally, a portion (45) of each solder bump remains uncoated, but in certain cases the bumps can be completely covered. The back side of the wafer is then lapped, ground, polished or otherwise treated (26) so as to remove material down to the level of the previously diced channels. This reduction in the thickness of the wafer causes the original diced channels to now extend completely from the front side to the back side of the wafer. The wafer is then singulated (28) by cutting the underfill material (92) that was deposited in the channels during the coating step, so that the integrated circuit chip (12) is released from the wafer, and the underfill material that was coated on the active side remains affixed to the active surface of each individual integrated circuit chip.

    摘要翻译: 一种用于在晶片级的集成电路芯片上提供底部填充材料的方法。 晶片(10)通常包含一个或多个集成电路芯片(12),并且每个集成电路芯片在其有源表面上通常具有多个焊料凸块(34)。 晶片首先在有源表面侧切割(22)以形成最终限定每个单独的集成电路芯片的边缘(39)的通道(38),切割具有这样的深度,使得其仅切割 晶圆。 然后用底部填充材料(40)涂覆(24)晶片的前侧(36)。 通常,每个焊料凸块的一部分(45)保持未涂覆,但在某些情况下,凸块可被完全覆盖。 然后将晶片的背面研磨,研磨,抛光或以其他方式处理(26),以便将材料移除到先前切割的通道的水平。 晶片厚度的这种减小使得原来的切割通道现在完全从晶片的正面延伸到背面。 然后通过切割在涂布步骤期间沉积在通道中的底部填充材料(92)将晶片分割(28),使得集成电路芯片(12)从晶片释放,并将涂覆的底部填充材料 有源侧保持固定到每个单独的集成电路芯片的有源表面。

    Cold cathode device and vacuum gauge using same
    5.
    发明授权
    Cold cathode device and vacuum gauge using same 有权
    冷阴极装置和真空计使用相同

    公开(公告)号:US07141983B2

    公开(公告)日:2006-11-28

    申请号:US11092087

    申请日:2005-03-29

    IPC分类号: G01L21/34

    CPC分类号: G01L21/34

    摘要: A cold cathode device (20) includes a grid (24), a cold cathode (21) positioned under the grid, and a shield electrode (26) positioned above and parallel to the grid. A vacuum gauge includes a shell (32), a collector (39), an anode (38), and the cold cathode device of the present invention. The cold cathode device and the collector are positioned symmetrically relative to the anode. The collector, the grid and the cold cathode device are received in the shell. The shield electrode can shield an electric field of the grid for preventing from disturbing a symmetrical saddle field in the vacuum gauge. Electrons produced by the cold cathode device can obtain a long electron track because the electron vibration in the saddle field is symmetrical. Thus, the vacuum gauge has an improved sensitivity, and can be widely used to measure pressure in ultra-high and extremely high vacuum conditions.

    摘要翻译: 冷阴极器件(20)包括栅格(24),位于栅格下方的冷阴极(21)和位于栅格上方并平行于栅极的屏蔽电极(26)。 真空计包括壳体(32),收集器(39),阳极(38)和本发明的冷阴极装置。 冷阴极器件和集电器相对于阳极对称地定位。 收集器,格栅和冷阴极装置被接收在外壳中。 屏蔽电极可以屏蔽电网的电场,以防止干扰真空计中的对称鞍场。 由冷阴极器件产生的电子可以获得长电子轨迹,因为鞍场中的电子振动是对称的。 因此,真空计具有提高的灵敏度,并且可以广泛用于在超高和极高的真空条件下测量压力。

    Faucet handle
    7.
    外观设计

    公开(公告)号:USD935002S1

    公开(公告)日:2021-11-02

    申请号:US29693405

    申请日:2019-06-03

    申请人: Jing Qi

    设计人: Jing Qi

    Faucet
    8.
    外观设计
    Faucet 有权

    公开(公告)号:USD913428S1

    公开(公告)日:2021-03-16

    申请号:US29691597

    申请日:2019-05-17

    申请人: Jing Qi

    设计人: Jing Qi

    Ionization vacuum gauge
    9.
    发明授权
    Ionization vacuum gauge 有权
    电离真空计

    公开(公告)号:US09355825B2

    公开(公告)日:2016-05-31

    申请号:US13661011

    申请日:2012-10-25

    CPC分类号: H01J41/06

    摘要: An ionization vacuum gauge includes a cathode, an anode and an ion collector. The ion collector component is located at one side of the anode component and spaced from the anode component. The cathode component is located at another side of the anode component and includes an electron emitter, which extends toward the anode component from the cathode component. The electron emitter includes at least one carbon nanotube wire.

    摘要翻译: 电离真空计包括阴极,阳极和离子收集器。 离子收集器部件位于阳极部件的一侧并与阳极部件间隔开。 阴极部件位于阳极部件的另一侧,并且包括从阴极部件向阳极部件延伸的电子发射器。 电子发射体包括至少一个碳纳米管线。

    MATERIALS AND METHODS FOR SENSITIZING MULTIDRUG RESISTANT CELLS
    10.
    发明申请
    MATERIALS AND METHODS FOR SENSITIZING MULTIDRUG RESISTANT CELLS 有权
    用于致敏耐药细胞的材料和方法

    公开(公告)号:US20110301108A1

    公开(公告)日:2011-12-08

    申请号:US13125530

    申请日:2009-10-24

    CPC分类号: A61K31/425 A61K31/54

    摘要: Disclosed herein are materials and methods for sensitizing multidrug resistant cancer cells that express ABCG2 and related proteins members of a family of ATP-binding transporter superfamily that mediate drug efflux found in some types of multidrug resistant caner cells. A series of compounds, including (N-(4-chlorophenyl)-2-[(6-{[4,6-di(4-morpholinyl)-1,3,5-tri-azin-2-yl]amino}-1,3-benzothiazol-2-yl)sulfanyl]acetamide), specifically inhibits ABCG2 and can be used to boost the bio-avail-ability of one or more effective cancer killing drugs, making it possible to use certain widely used chemotherapeutic reagent to treat multidrug resistance cancers. Using these compounds in combination with chemotherapeutic drugs that are substrates for ABCG2 and related proteins may also find utility in treating cancer cells that are not currently identified as multi-drug resistant Additionally, these compounds appear to accelerate the intercellular degradation of ABCG2 and related proteins. They are not toxic to animals at levels at which they effect the activity of ABCG2 expressed in multi-drug resistant cancer lines.

    摘要翻译: 本文公开了用于敏化表达ABCG2的多药耐药性癌细胞的物质和方法,以及介导某些类型的多药耐药性细胞中发现的药物流出的ATP结合转运蛋白超家族的相关蛋白质成员。 一系列化合物,包括(N-(4-氯苯基)-2 - [(6 - {[4,6-二(4-吗啉基)-1,3,5-三氮杂萘-2-基]氨基} -1,3-苯并噻唑-2-基)硫烷基]乙酰胺),特异性抑制ABCG2,可用于提高一种或多种有效的癌症杀伤药物的生物利用度,使得可以使用某些广泛使用的化学治疗试剂 治疗多药耐药性癌症。 将这些化合物与作为ABCG2和相关蛋白质的底物的化学治疗药物联合使用也可用于治疗目前尚未被鉴定为多药耐药的癌细胞。另外,这些化合物似乎加速了ABCG2和相关蛋白质的细胞间降解。 它们在影响多药耐药性癌细胞系中表达的ABCG2活性的水平下对动物无毒性。