公开(公告)号：US20060170095A1

公开(公告)日：2006-08-03

申请号：US11049407

申请日：2005-02-02

申请人： John Brennan ,  Joseph Freund ,  Ralph Moyer ,  John Osenbach ,  Hugo Safar ,  Thomas Shilling

发明人： John Brennan ,  Joseph Freund ,  Ralph Moyer ,  John Osenbach ,  Hugo Safar ,  Thomas Shilling

IPC分类号： H01L23/34

CPC分类号： H01L23/047 ,  H01L23/10 ,  H01L23/24 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/564 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/0655 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/85203 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099

摘要： Device packages often include walls build on a heat sink that surrounds a device die that thermally interacts with the heat sink. Use of raised or depressed feature on said heat sink that contacts the walls improves the cohesiveness of the package. By appropriately positioning these features contaminant infusion into the package is improved without degrading cohesiveness.

摘要翻译： 设备包通常包括围绕与散热器热相互作用的设备管芯的散热器上的壁。 在所述散热器上使用与壁接触的凸起或凹陷特征改善了包装的内聚性。 通过适当地定位这些特征，可以改善污染物输入到包装中而不降低粘结性。

公开(公告)号：US20060172465A1

公开(公告)日：2006-08-03

申请号：US11049246

申请日：2005-02-02

申请人： John Brennan ,  Joseph Freund ,  Jeffrey Gilbert ,  John Osenbach ,  Hugo Safar

发明人： John Brennan ,  Joseph Freund ,  Jeffrey Gilbert ,  John Osenbach ,  Hugo Safar

IPC分类号： H01L21/60

CPC分类号： H01L24/85 ,  B23K20/005 ,  H01L21/52 ,  H01L23/10 ,  H01L23/24 ,  H01L23/36 ,  H01L23/49861 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/05599 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/484 ,  H01L2224/49109 ,  H01L2224/78313 ,  H01L2224/83801 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/78 ,  H01L2224/45099 ,  H01L2924/00

摘要： Devices such as amplifiers are built on a heat sink having a perimeter wall surrounding active electronic devices. Surprisingly formation of wire bonds to such devices tends to be degraded if they have an aspect ratio greater than 2:1. This problem is overcome by forming wire bonds before such walls have a height of 30 mils and after bond formation extending the walls to their final height.

摘要翻译： 诸如放大器的装置构建在具有围绕有源电子装置的周围壁的散热器上。 如果具有大于2:1的纵横比，则令这种装置的引线键的形成趋向于降低。 这个问题通过在这种壁的高度为30密耳之间并且在形成壁之后延伸到其最终高度之后形成线接合来克服。

公开(公告)号：US20060108672A1

公开(公告)日：2006-05-25

申请号：US10996677

申请日：2004-11-24

申请人： John Brennan ,  Joseph Freund ,  John Osenbach ,  Hugo Safar ,  Richard Shanaman

发明人： John Brennan ,  Joseph Freund ,  John Osenbach ,  Hugo Safar ,  Richard Shanaman

IPC分类号： H01L23/495 ,  H01L23/24 ,  H01L23/02

CPC分类号： H01L24/48 ,  H01L23/047 ,  H01L23/06 ,  H01L23/4827 ,  H01L23/488 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/29 ,  H01L24/31 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/2908 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/83805 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The specification describes a technique for die bonding that is tailored to air cavity plastic packages for high power devices. The die bonding method is simple and effective, and eliminates the step of placement of solder preforms in the die bonding operation. According to the invention the die that are to be attached are pre-coated with AuSn solder. A multifunctional bonding layer is applied between the silicon die and the AuSn bonding layer. The multifunctional bonding layer comprises a multi-layer structure including Ti/Pt/Au. The chip support member comprises copper or a copper alloy. The chip support member may also be pre-coated with a bonding layer. The pre-coated die is soldered to the chip support member.

摘要翻译： 本说明书描述了针对大功率器件的空腔塑料封装而定制的芯片接合技术。 芯片接合方法简单有效，并且消除了在焊接操作中放置焊料预成型件的步骤。 根据本发明，待附接的模具预先涂覆有AuSn焊料。 在硅片和AuSn结合层之间施加多功能结合层。 多功能结合层包括包含Ti / Pt / Au的多层结构。 芯片支撑构件包括铜或铜合金。 芯片支撑构件也可以预先涂覆有结合层。 预涂模具被焊接到芯片支撑构件。

公开(公告)号：US20060170079A1

公开(公告)日：2006-08-03

申请号：US11048968

申请日：2005-02-02

申请人： John Brennan ,  Patrick Carberry ,  Joseph Freund ,  George Libricz ,  Ralph Moyer

发明人： John Brennan ,  Patrick Carberry ,  Joseph Freund ,  George Libricz ,  Ralph Moyer

IPC分类号： H01L23/495

CPC分类号： H01L23/047 ,  H01L23/24 ,  H01L23/49861 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/78313 ,  H01L2224/85181 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate, at least one integrated circuit element and a leadframe. The integrated circuit element and the leadframe are disposed on the substrate. The leadframe has at least one lead and at least one encapsulant dam disposed on the at least one lead. The encapsulant dam has at least one chamfered edge to provide clearance for a wire feed during a wire-bonding process.

摘要翻译： 提供了具有基板，至少一个集成电路元件和引线框架的集成电路器件。 集成电路元件和引线框架设置在基板上。 引线框具有至少一个引线和至少一个密封剂坝，其设置在至少一个引线上。 密封剂坝具有至少一个倒角边缘，以在引线接合过程期间为焊丝进给提供间隙。

公开(公告)号：US20050189616A1

公开(公告)日：2005-09-01

申请号：US10788678

申请日：2004-02-27

申请人： John Brennan ,  Joseph Freund ,  John Osenbach

发明人： John Brennan ,  Joseph Freund ,  John Osenbach

IPC分类号： H01L21/331 ,  H01L29/00 ,  H01L29/06

CPC分类号： H01L29/66234 ,  H01L29/0657

摘要： Power transistor devices and techniques for reducing bowing in such devices are provided. In one aspect, a power transistor device is provided. The power transistor device comprises a substrate, a device film formed on the substrate and an adhesion layer formed on a side of the substrate opposite the device film, wherein at least a portion of the adhesion layer is at least partially segmented. The power transistor device thereby exhibits a reduced amount of bowing relative to an amount of bowing expected without the segmenting of the adhesion layer. The power transistor device may be part of an integrated circuit.

摘要翻译： 提供了功率晶体管器件和用于减少这种器件中的弓形的技术。 一方面，提供了一种功率晶体管器件。 功率晶体管器件包括衬底，形成在衬底上的器件膜和形成在衬底相对于器件膜的一侧上的粘附层，其中粘附层的至少一部分至少部分地被分割。 因此，功率晶体管器件相对于预期的弯曲量而显示减少的弯曲量，而没有粘附层的分割。 功率晶体管器件可以是集成电路的一部分。

公开(公告)号：US20060158856A1

公开(公告)日：2006-07-20

申请号：US11385245

申请日：2006-03-21

申请人： Timothy Bambridge ,  John Bowen ,  John Brennan ,  Joseph Freund

发明人： Timothy Bambridge ,  John Bowen ,  John Brennan ,  Joseph Freund

IPC分类号： H05K7/20 ,  B23K13/08

CPC分类号： H01L24/49 ,  H01L23/66 ,  H01L24/48 ,  H01L2223/6644 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  Y10T29/49144 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49162 ,  Y10T29/49179 ,  Y10T29/49194 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

公开(公告)号：US20060043609A1

公开(公告)日：2006-03-02

申请号：US10926631

申请日：2004-08-26

申请人： John Brennan ,  Donald Farrell ,  Joseph Freund

发明人： John Brennan ,  Donald Farrell ,  Joseph Freund

IPC分类号： H01L23/52

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/4917 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An integrated circuit comprises an integrated circuit package and a plurality of circuit elements disposed within the integrated circuit package. A plurality of wire bonds provide connections for at least one of the circuit elements. At least one wire bond in a first subset of wire bonds and at least one wire bond in a second subset of wire bonds are substantially perpendicular to one another at a crossing point of the wire bonds in a plan view of the integrated circuit.

公开(公告)号：US20050184385A1

公开(公告)日：2005-08-25

申请号：US10784756

申请日：2004-02-23

申请人： John Brennan ,  Joseph Freund ,  Sujal Shah ,  Richard Shanaman

发明人： John Brennan ,  Joseph Freund ,  Sujal Shah ,  Richard Shanaman

IPC分类号： H01L23/10 ,  H01L23/12 ,  H01L23/34 ,  H01L23/367

CPC分类号： H01L23/3677 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2924/00

摘要： A semiconductor device includes a substrate and an active region formed in the substrate proximate an upper surface of the substrate. The active region includes at least one circuit element formed therein. At least one channel is formed in a back surface of the substrate opposite the upper surface of the substrate, the channel being formed proximate the active region. The channel is substantially filled with one or more layers of a thermally conductive material and configured so as to provide a thermal conduction path for conducting heat away from the active region.

摘要翻译： 半导体器件包括衬底和形成在衬底中的靠近衬底的上表面的有源区。 有源区包括形成在其中的至少一个电路元件。 在衬底的与衬底的上表面相对的背表面中形成至少一个沟道，该沟道靠近有源区形成。 通道基本上填充有一层或多层导热材料，并且构造成提供用于将热量从有源区域传导出来的热传导路径。

公开(公告)号：US20050191793A1

公开(公告)日：2005-09-01

申请号：US10788162

申请日：2004-02-26

申请人： John Brennan ,  Joseph Freund ,  Curtis Miller ,  Richard Shanaman

发明人： John Brennan ,  Joseph Freund ,  Curtis Miller ,  Richard Shanaman

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/047 ,  H01L23/31 ,  H01L23/433 ,  H01L23/495

CPC分类号： H01L23/49562 ,  H01L23/047 ,  H01L23/315 ,  H01L23/4334 ,  H01L23/49568 ,  H01L24/48 ,  H01L2224/32188 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00

摘要： A method for attaching at least one IC die to a non-ceramic IC package including a leadframe and a base, the IC package being configured for receiving the at least one IC die, includes attaching the IC die to an upper surface of a thermal carrier in a manner which facilitates thermal transfer between the die and the carrier. The method further includes attaching the thermal carrier having the IC die attached thereto to an upper surface of the base of the IC package. In this manner, one or more IC dies may be attached to a standard plastic IC package without a significant impact on thermal transfer in the device and at a significant cost savings compared to ceramic IC packages.

摘要翻译： 一种用于将至少一个IC管芯附接到包括引线框架和基座的非陶瓷IC封装的方法，所述IC封装构造成用于接收所述至少一个IC管芯，包括将所述IC管芯附接到热载体的上表面 以促进模具和载体之间的热传递的方式。 该方法还包括将具有附接到其中的IC芯片的热载体附接到IC封装的基座的上表面。 以这种方式，与陶瓷IC封装相比，可以将一个或多个IC管芯连接到标准塑料IC封装，而不会对器件中的热传递产生显着影响。

公开(公告)号：US20050183265A1

公开(公告)日：2005-08-25

申请号：US10787010

申请日：2004-02-25

申请人： Timothy Bambridge ,  John Bowen ,  John Brennan ,  Joseph Freund

发明人： Timothy Bambridge ,  John Bowen ,  John Brennan ,  Joseph Freund

IPC分类号： H01L23/49 ,  H01L23/66 ,  H01L27/082 ,  H01L27/102

CPC分类号： H01L24/49 ,  H01L23/66 ,  H01L24/48 ,  H01L2223/6644 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  Y10T29/49144 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49162 ,  Y10T29/49179 ,  Y10T29/49194 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.

摘要翻译： 一种集成电路是以从集成电路封装到集成电路封装的射频性能一致的方式引线接合的。 测量集成电路内的结合距离，每个对应于待形成的引线键合。 根据键距，基线长度和基线回路高度，计算假想线接合曲线下的面积。 导线沿着给定的一个焊接距离结合以形成给定的一个引线键合。 提供给定引线键合的引线键合分布，其具有基本上等于所计算的面积的区域。