摘要:
A chemical mechanical planarization tool and method are presented employing a non-linear motion of the carrier arm relative to the polishing pad. The non-linear motion of the carrier arm relative to the polishing pad can be accomplished in a variety of ways, for example, employing a mechanical template having an irregular opening or programming the carrier displacement mechanism to move the carrier in an irregular, non-rotational X-Y path over the polishing pad.
摘要:
A polishing pad and method of polishing with a chemical mechanical planarization apparatus includes providing a bulk polishing pad material having a front polishing surface side and a back side. The polishing pad further includes a polishing pad wear indicator for indicating a polishing pad wear during a life cycle of the polishing pad. The polishing pad wear indicator is formed on the back side of the bulk polishing pad material.
摘要:
Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.
摘要:
Bidirectional field emission devices (FEDs) and associated fabrication methods are described. A basic device includes a first unitary field emission structure and an adjacently positioned, second unitary field emission structure. The first unitary structure has a first cathode portion and a first anode portion, while the second unitary structure has a second cathode portion and a second anode portion. The structures are positioned such that the first cathode portion opposes the second anode portion so that electrons may flow by field emission thereto and the second cathode portion opposes the first anode portion, again so that electrons may flow by field emission thereto. A control mechanism defines whether the device is active, while biasing voltages applied to the first and second unitary structures define the direction of current flow. Multiple applications exist for such a bidirectional FED. For example, an FED DRAM cell is discussed, as are methods for fabricating the various devices.
摘要:
An apparatus used for holding a first semiconductor device in proper alignment to a second semiconductor device, whose size is different from the first device, while performing a C4 bond between the two devices. The apparatus for holding the two devices in proper alignment consists of a holding fixture, which includes upper and lower pocket receptacles for receiving the semiconductor devices. The semiconductor devices are placed into the respective upper and lower slots aligned to two or more edges of the holding fixture.
摘要:
A fabrication method and resultant monolithic electronic module having a separately formed thin-film layer attached to a side surface. The fabrication method includes providing an electronic module composed of stacked integrated circuit chips. A thin-film layer is separately formed on a temporary support which is used to attach the thin-film layer to the electronic module. The disclosed techniques may also be used for attaching an interposer, which may include active circuity, to an electronic module. Specific details of the fabrication method, resulting multichip packages, and various thin-film structures are set forth.
摘要:
Disclosed is a process for producing multi-level conductor/insulator films on a processed semiconductor substrate having a conductor pattern. The insulator layers, each comprise a photosensitive polyimide polymer composition, and this allows the desired wiring channels and stud vias to be formed directly in the insulator layers, without the use of separate masking layers and resulting image transfer steps, thus providing a less cumbersome and costly process.
摘要:
Disclosed is a process for passivating a metal surface in a metal/polyimide structure, such as a polyimide layer on a semiconductor substrate containing a pattern of metallization. The process involves the formation of an intermediate layer of a silsesquioxane polymer between the polyimide layer and the substrate. The silsesquioxane layer passivates the metal, to inhibit interaction between the metal surface and the polyimide precursor material used in forming the polyimide, to provide a moisture-resistant and oxidation-resistant interface.
摘要:
A method for forming an electrically conductive line between two layers of insulating material and method for connecting the line through both layers of the insulating material to the opposite surfaces is provided. In the method, first, second and third layers of insulating material are provided wherein the first and third layers are separated by the second layer of insulating material which is different in etch rate from the first and third layers. The edge portion of all three layers is exposed and the insulating layer of the second material is selectively etched to remove the revealed edge portion and provide a slot between the first and third layers of insulating material. Also openings are provided in both the first and third layers of insulating material which communicate with the slot and extend respectively through the layers of the first and third insulating material. Thereafter, a conductive material such as tungsten is deposited in the slot and the openings and also on the face of the stacked insulating material. Finally, the excess tungsten is removed from the faces of the insulating material of the first and third layers leaving a conductive line sandwiched between the first and third insulating layers of the material; also metal remains in the openings formed to thereby form conductive studs extending from the line to the opposite surfaces of the insulating material sandwich so formed.
摘要:
A method for temporarily attaching an electrical component to a pad, testing the component, removing and replacing the component if necessary, and making a final attachment of the component to the pad. The method provides for attachment and removal of components, to and from pads located on the substrate of a printed circuit board, wherein the method enables components to be easily removed prior to final assembly without damaging the circuit board or components mounted thereon. The method utilizes a layer of conductive, radiation-curable adhesive placed between the component's lead and the pad. Radiation is then directed through a mask onto a portion of the adhesive layer, which cures the portion while leaving a remaining area of the adhesive layer uncured. Because the portion of the adhesive layer that receives the radiation, and is consequently cured by the radiation, is only a limited portion of the whole adhesive layer, the component may be easily removed from the pad by applying a small mechanical force. Following such removal, the component or a replacement thereof may be attached to the remaining area. The final stage of the method cures the remaining area of uncured adhesive by exposing the remaining area to radiation.