摘要:
A semiconductor chip includes stress-relief to mitigate the effects of differences in coefficients of thermal expansion (CTE) between a printed circuit board (PCB) and a semiconductor chip and a flip-chip package including the semiconductor chip. The semiconductor chip includes a stress-relief buffer coupling a bump and a semiconductor chip pad.
摘要:
Methods of forming connection bumps for semiconductor devices in which rewiring patterns are formed. The method includes preparing a semiconductor substrate on which a pad is partially exposed through a passivation film, forming a seed layer on the pad and passivation film, forming a photoresist pattern including an opening pattern comprising a first opening that exposes a portion of the seed layer on the pad and a second opening that exposes a portion of the seed layer on the passivation film and is separated from the first opening, performing a first electroplating to form filler layers in the opening patterns, performing a second electroplating to form a solder layer on the filler layers, removing the photoresist pattern and performing a reflow process to form a collapsed solder layer that electrically connects the filler layers to each other and a solder bump on the filler layer formed in the second opening.
摘要:
A semiconductor package includes a semiconductor chip having a first bump group and a second bump group, and a package substrate having a first pattern for data communication with the semiconductor chip and a second pattern for supplying power to the semiconductor chip or grounding the semiconductor chip, wherein the first bump group is disposed on the first pattern and the second bump group is disposed on the second pattern.
摘要:
A package substrate, a semiconductor package having the same, and a method for fabricating the semiconductor package. The semiconductor package includes a semiconductor chip, a package substrate, and a molding layer. The package substrate provides a region mounted with the semiconductor chip. The molding layer is configured to mold the semiconductor chip. The package substrate includes a first opening portion that provides an open region connected electrically to the semiconductor chip and extends beyond sides of the semiconductor chip to be electrically connected to the semiconductor chip.
摘要:
Provided are a method for manufacturing a semiconductor package and a semiconductor package manufactured using the method. The method includes providing a substrate having a first region and a second region having a higher step difference than the first region, i.e., having a difference in height, forming a mask pattern having a first opening exposing a portion of the first region and a second opening exposing a portion of the second region on the substrate, forming first and second bump material films filling the first and second openings, respectively, and forming the first and second bumps by performing a reflow process on the first and second bump material films, wherein the first opening has a lower portion having the same width with the second opening and a top portion having a width greater than the second opening.
摘要:
A semiconductor chip includes a redistribution interconnect that is implemented by shorting bumps, and a semiconductor package and a system each including the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a passivation film disposed on the semiconductor substrate, and a plurality of pseudo bumps disposed on the passivation film. Each pseudo bump is directly connected to adjacent pseudo bumps to form at least one redistribution interconnect.
摘要:
A bump structure may include a body portion spaced apart from a pad disposed on a substrate and a first extension extending from a side of the body portion onto the pad. A second extension extends from another side of the body portion.
摘要:
A semiconductor package includes a semiconductor chip having a first bump group and a second bump group, and a package substrate having a first pattern for data communication with the semiconductor chip and a second pattern for supplying power to the semiconductor chip or grounding the semiconductor chip, wherein the first bump group is disposed on the first pattern and the second bump group is disposed on the second pattern.
摘要:
A bump structure may include a body portion spaced apart from a pad disposed on a substrate and a first extension extending from a side of the body portion onto the pad. A second extension extends from another side of the body portion.
摘要:
A semiconductor chip includes a redistribution interconnect that is implemented by shorting bumps, and a semiconductor package and a system each including the semiconductor chip. The semiconductor chip includes a semiconductor substrate, a passivation film disposed on the semiconductor substrate, and a plurality of pseudo bumps disposed on the passivation film. Each pseudo bump is directly connected to adjacent pseudo bumps to form at least one redistribution interconnect.