公开(公告)号：US06930382B2

公开(公告)日：2005-08-16

申请号：US10875190

申请日：2004-06-25

申请人： Kanako Sawada ,  Keiichi Sasaki

发明人： Kanako Sawada ,  Keiichi Sasaki

IPC分类号： H01L25/18 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L25/065 ,  H01L25/07 ,  H01L23/02

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/13091 ,  Y10S438/926 ,  H01L2924/00

摘要： A semiconductor device includes a first substrate including an element, a first plug penetrating through the first substrate, made of a conductive material, and electrically connected with the element, a second substrate provided above the first substrate, and electrically connected with the element via the first plug, and a second plug penetrating through the first substrate, made of a non-dielectric material, and being not electrically connected with the second substrate.

摘要翻译： 一种半导体器件，包括：第一基板，包括元件，贯穿所述第一基板的第一插塞，由导电材料制成并与所述元件电连接;第二基板，设置在所述第一基板上方，并经由所述元件与所述元件电连接 第一插头和穿过第一基板的第二插头，由非电介质材料制成，并且不与第二基板电连接。

公开(公告)号：US06841469B2

公开(公告)日：2005-01-11

申请号：US10327981

申请日：2002-12-26

申请人： Kanako Sawada ,  Keiichi Sasaki

发明人： Kanako Sawada ,  Keiichi Sasaki

IPC分类号： H01L25/18 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L25/065 ,  H01L25/07 ,  H01L21/4763

CPC分类号： H01L25/50 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/13091 ,  Y10S438/926 ,  H01L2924/00

摘要： A semiconductor device comprises a first substrate including an element, a first plug penetrating through the first substrate, made of a conductive material, and electrically connected with the element, a second substrate provided above the first substrate, and electrically connected with the element via the first plug, and a second plug penetrating through the first substrate, made of a non-dielectric material, and being not electrically connected with the second substrate.

摘要翻译： 半导体器件包括：第一衬底，其包括元件，穿过第一衬底的第一插塞，由导电材料制成并与该元件电连接;第二衬底，设置在第一衬底上方，并经由元件与元件电连接 第一插头和穿过第一基板的第二插头，由非电介质材料制成，并且不与第二基板电连接。

公开(公告)号：US5424250A

公开(公告)日：1995-06-13

申请号：US215815

申请日：1994-03-22

申请人： Kanako Sawada

发明人： Kanako Sawada

IPC分类号： H01L21/56

CPC分类号： H01L21/56 ,  H01L2224/16 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/13091

摘要： A method for manufacturing a semiconductor device in which two resin encapsulating sheets, each having a convex portion, are brought into contact with a semiconductor chip. The semiconductor chip is then encapsulated by pressing the chip between the encapsulating sheets.

摘要翻译： 一种制造半导体器件的方法，其中两个具有凸部的树脂封装片与半导体芯片接触。 然后通过在封装片之间挤压芯片来封装半导体芯片。

公开(公告)号：US07045886B2

公开(公告)日：2006-05-16

申请号：US10375146

申请日：2003-02-28

申请人： Kanako Sawada

发明人： Kanako Sawada

IPC分类号： H01L23/02 ,  H01L23/28 ,  H01L23/34

CPC分类号： H01L23/49827 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/29 ,  H01L25/0652 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device is disclosed which has a first substrate with wiring formed thereon, a second substrate mounted above the first substrate with a conductive plug buried in the second substrate to penetrate between upper and lower surfaces thereof, a plurality of semiconductor chips mounted above the second substrate and having a terminal electrode as electrically connected to the first substrate through the conductive plug of the second substrate, and a resin buried in an empty space or gap between adjacent ones of the plurality of semiconductor chips.

公开(公告)号：US20050006786A1

公开(公告)日：2005-01-13

申请号：US10915431

申请日：2004-08-11

申请人： Kanako Sawada

发明人： Kanako Sawada

IPC分类号： H01L25/18 ,  H01L21/56 ,  H01L21/60 ,  H01L23/498 ,  H01L23/52 ,  H01L23/538 ,  H01L25/04 ,  H01L23/053

CPC分类号： H01L23/49827 ,  H01L21/563 ,  H01L23/5385 ,  H01L24/29 ,  H01L25/0652 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83192 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device is disclosed which has a first substrate with wiring formed thereon, a second substrate mounted above the first substrate with a conductive plug buried in the second substrate to penetrate between upper and lower surfaces thereof, a plurality of semiconductor chips mounted above the second substrate and having a terminal electrode as electrically connected to the first substrate through the conductive plug of the second substrate, and a resin buried in an empty space or gap between adjacent ones of the plurality of semiconductor chips.

摘要翻译： 公开了一种半导体器件，其具有在其上形成有布线的第一基板，安装在第一基板上方的第二基板，其中埋置在第二基板中的导电插塞以穿透其上表面和下表面之间，安装在第二基板上的多个半导体芯片 衬底，并且具有通过第二衬底的导电插塞电连接到第一衬底的端子电极，以及埋在多个半导体芯片中的相邻空穴之间的空白空间或间隙中的树脂。

公开(公告)号：US08409919B2

公开(公告)日：2013-04-02

申请号：US12882673

申请日：2010-09-15

申请人： Hideo Aoki ,  Masatoshi Fukuda ,  Kanako Sawada ,  Yasuhiro Koshio

发明人： Hideo Aoki ,  Masatoshi Fukuda ,  Kanako Sawada ,  Yasuhiro Koshio

IPC分类号： H01L21/60

CPC分类号： H01L24/81 ,  H01L24/13 ,  H01L24/16 ,  H01L24/75 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/7592 ,  H01L2224/81065 ,  H01L2224/81093 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81208 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/81986 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00

摘要： According to a manufacturing method of one embodiment, a first solder bump and a second solder bump are aligned and placed in contact with each other, and thereafter, the first and second solder bumps are heated to a temperature equal or higher than a melting point of the solder bumps and melted, whereby a partially connection body of the first solder bump and the second solder bump is formed. The partially connection body is cooled. The cooled partially connection body is heated to a temperature equal to or higher than the melting point of the solder bump in a reducing atmosphere, thereby to form a permanent connection body by melting the partially connection body while removing an oxide film existing on a surface of the partially connection body.

摘要翻译： 根据一个实施例的制造方法，将第一焊料凸块和第二焊料凸块对齐并且彼此接触放置，然后将第一和第二焊料凸块加热至等于或高于 焊料凸起并熔化，由此形成第一焊料凸块和第二焊料凸块的部分连接体。 部分连接体被冷却。 冷却的部分连接体在还原气氛中被加热到等于或高于焊料凸点的熔点的温度，从而通过熔化部分连接体而形成永久性连接体，同时除去存在于表面上的氧化膜 部分连接体。

公开(公告)号：US20100320258A1

公开(公告)日：2010-12-23

申请号：US12815693

申请日：2010-06-15

申请人： Kanako Sawada ,  Hideo Aoki ,  Naoyuki Komuta ,  Koji Ogiso

发明人： Kanako Sawada ,  Hideo Aoki ,  Naoyuki Komuta ,  Koji Ogiso

IPC分类号： B23K31/02

CPC分类号： B23K1/008 ,  B23K1/0016 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/81065 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81986 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  Y10T29/49144 ,  Y10T29/49149 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/05099

摘要： In one embodiment, a first substrate having first solder bumps and a second substrate having second solder bumps are stacked while temporarily tacking the solder bumps to each other, and then a stack is disposed inside a furnace. The gas in the furnace is exhausted to be in a reduced pressure atmosphere, and then a carboxylic acid gas is introduced into the furnace. While increasing a temperature inside the furnace where the carboxylic acid gas is introduced, the gas in the furnace is exhausted to be in a reduced pressure atmosphere at a temperature in a range from a reduction temperature of oxide films by the carboxylic acid gas to lower than a melting temperature of the solder bumps. By increasing the temperature inside the furnace up to a temperature in a range of the melting temperature of the solder bumps and higher, the first solder bumps and the second solder bumps are melted and joined.

摘要翻译： 在一个实施例中，堆叠具有第一焊料凸块的第一基板和具有第二焊料凸块的第二基板，同时临时将焊料凸块彼此粘贴，然后将堆叠设置在炉内。 将炉内的气体排出到减压气氛中，然后将羧酸气体引入炉中。 在提高引入了羧酸气体的炉内的温度的同时，将炉内的气体在由氧化物膜的还原温度通过羧酸气体降低至低于室温的温度下排出到减压气氛中 焊料凸块的熔化温度。 通过将炉内的温度升高到焊锡凸块的熔融温度范围内的温度，使第一焊料凸块和第二焊料凸点熔化并接合。

公开(公告)号：US6087715A

公开(公告)日：2000-07-11

申请号：US336697

申请日：1999-06-21

申请人： Kanako Sawada ,  Hee Yeoul Yoo ,  Atsushi Kurosu ,  Kenji Takahashi

发明人： Kanako Sawada ,  Hee Yeoul Yoo ,  Atsushi Kurosu ,  Kenji Takahashi

IPC分类号： H01L21/60 ,  H01L21/607 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50

CPC分类号： H01L24/97 ,  H01L23/3142 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49586 ,  H01L24/32 ,  H01L2224/29007 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/0135 ,  H01L2924/078 ,  H01L2924/15151 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511

摘要： To provide a highly reliable semiconductor device which does not suffer from a crack in its package, a semiconductor chip 12 is mounted on a lead frame 11 with a bonding layer 13 between them, and they are sealed with a sealing resin 14. The lead frame 11 has a base member 11a essentially consisting of Cu and an oxide film 11b essentially consisting of an oxide of the base member 11a formed on the base member and having a thickness of about 50 nm or below. By controlling the oxide film 11b to a thickness of about 50 nm or below, an adhesion strength with the sealing resin 14 is improved greatly, so that a package crack does not occur even if a large thermal load is applied in a reflow process for mounting.

摘要翻译： 为了提供不会在其封装中遭受裂纹的高度可靠的半导体器件，半导体芯片12安装在引线框架11上，其间具有接合层13，并且用密封树脂14密封。引线框架 11具有基本上由Cu组成的基底部件11a和基本部件11a的氧化物基本上由氧化膜11b构成，该基底部件11a形成在基体上，厚度约为50nm以下。 通过将氧化膜11b控制到约50nm以下的厚度，与密封树脂14的密合强度大大提高，即使在用于安装的回流工艺中施加大的热负荷也不会发生封装裂缝 。

公开(公告)号：US5937279A

公开(公告)日：1999-08-10

申请号：US63380

申请日：1998-04-21

申请人： Kanako Sawada ,  Hee Yeoul Yoo ,  Atsushi Kurosu ,  Kenji Takahashi

发明人： Kanako Sawada ,  Hee Yeoul Yoo ,  Atsushi Kurosu ,  Kenji Takahashi

IPC分类号： H01L21/60 ,  H01L21/607 ,  H01L23/31 ,  H01L23/495 ,  H01L23/50 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/97 ,  H01L23/3142 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49586 ,  H01L24/32 ,  H01L2224/29007 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/0134 ,  H01L2924/0135 ,  H01L2924/078 ,  H01L2924/15151 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511

摘要： To provide a highly reliable semiconductor device which does not suffer from a crack in its package, a semiconductor chip 12 is mounted on a lead frame 11 with a bonding layer 13 between them, and they are sealed with a sealing resin 14. The lead frame 11 has a base member 11a essentially consisting of Cu and an oxide film 11b essentially consisting of an oxide of the base member 11a formed on the base member and having a thickness of about 50 nm or below. By controlling the oxide film 11b to a thickness of about 50 nm or below, an adhesion strength with the sealing resin 14 is improved greatly, so that a package crack does not occur even if a large thermal load is applied in a reflow process for mounting.

公开(公告)号：US08191758B2

公开(公告)日：2012-06-05

申请号：US12815693

申请日：2010-06-15

申请人： Kanako Sawada ,  Hideo Aoki ,  Naoyuki Komuta ,  Koji Ogiso

发明人： Kanako Sawada ,  Hideo Aoki ,  Naoyuki Komuta ,  Koji Ogiso

IPC分类号： B23K31/02 ,  H01L21/44 ,  H05K3/00

CPC分类号： B23K1/008 ,  B23K1/0016 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/16 ,  H01L2224/81065 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81986 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  Y10T29/49144 ,  Y10T29/49149 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/05099

摘要： In one embodiment, a first substrate having first solder bumps and a second substrate having second solder bumps are stacked while temporarily tacking the solder bumps to each other, and then a stack is disposed inside a furnace. The gas in the furnace is exhausted to be in a reduced pressure atmosphere, and then a carboxylic acid gas is introduced into the furnace. While increasing a temperature inside the furnace where the carboxylic acid gas is introduced, the gas in the furnace is exhausted to be in a reduced pressure atmosphere at a temperature in a range from a reduction temperature of oxide films by the carboxylic acid gas to lower than a melting temperature of the solder bumps. By increasing the temperature inside the furnace up to a temperature in a range of the melting temperature of the solder bumps and higher, the first solder bumps and the second solder bumps are melted and joined.

摘要翻译： 在一个实施例中，堆叠具有第一焊料凸块的第一基板和具有第二焊料凸块的第二基板，同时临时将焊料凸块彼此粘贴，然后将堆叠设置在炉内。 将炉内的气体排出到减压气氛中，然后将羧酸气体引入炉中。 在提高引入了羧酸气体的炉内的温度的同时，将炉内的气体在由氧化物膜的还原温度通过羧酸气体降低至低于室温的温度下排出到减压气氛中 焊料凸块的熔化温度。 通过将炉内的温度升高到焊锡凸块的熔融温度范围内的温度，使第一焊料凸块和第二焊料凸点熔化并接合。