METHOD OF CLEANING STEEL SHEET AND CONTINOUS CLEANING SYSTEM OF STEEL SHEET
    3.
    发明申请
    METHOD OF CLEANING STEEL SHEET AND CONTINOUS CLEANING SYSTEM OF STEEL SHEET 有权
    钢板清洗方法和钢板连续清洗系统

    公开(公告)号:US20100095980A1

    公开(公告)日:2010-04-22

    申请号:US12451231

    申请日:2008-04-30

    IPC分类号: B08B3/00

    摘要: The present invention provides a method of cleaning steel sheet, said method of cleaning steel sheet feeding a cleaning solution activated by ultrasonic waves of a frequency of 0.8 MHz to 3 MHz to a surface of steel sheet at an angle inclined by 1 to 80° with respect to a line perpendicular to the surface of the steel sheet in a direction opposite to the running direction, thereby enabling megasonic waves to be applied to cleaning of running steel sheet and improving the cleaning effect and cleaning speed, and a continuous cleaning system of steel sheet.

    摘要翻译: 本发明提供一种清洁钢板的方法,所述清洁钢板的方法是将以0.8MHz至3MHz频率的超声波激活的清洗液以倾斜1°至80°的角度向钢板表面进行清洁, 相对于与行进方向相反的方向垂直于钢板表面的线,从而能够对超声波进行清扫,提高清洗效果和清洗速度,以及钢的连续清洗系统 片。

    Single silicon crystal having low OSF density induced by oxidation and
method for production thereof
    9.
    发明授权
    Single silicon crystal having low OSF density induced by oxidation and method for production thereof 失效
    通过氧化诱导的低OSF密度的单硅晶体及其生产方法

    公开(公告)号:US5373804A

    公开(公告)日:1994-12-20

    申请号:US882242

    申请日:1992-05-08

    CPC分类号: C30B29/06 C30B15/00

    摘要: A single silicon crystal wafer produced by the Czochvalski method and measuring not less than 100 mm in diameter, a single silicon crystal having low OSF density induced by oxidation, wherein regarding the local resistivity measured by the spread resistance method on the surface of said wafer subjected in advance to a heat treatment for extinction of oxygen donor, the proportion of the number of points of measurement registering errors exceeding .+-.1.0% of the mean value is not more than 35% of the total number of points of measurement, and regarding the distribution of oxygen concentration in solid solution in the wafer surface, the difference between the maximum and the minimum is not more than 2.0% of the maximum, and a method for production thereof.

    摘要翻译: 通过Czochvalski法生产的单晶硅晶片,直径不小于100mm,由氧化引起的OSF密度低的单一硅晶体,其中通过扩展电阻法在所述晶片的表面上测得的局部电阻率 提前进行氧供体灭绝的热处理时,超过平均值的+/- 1.0%的测量点数误差的比例不超过总测量点的35%,并且关于 在晶片表面的固溶体中的氧浓度的分布,最大值与最小值之间的差别不大于最大值的2.0%及其制造方法。