公开(公告)号：US4159205A

公开(公告)日：1979-06-26

申请号：US808950

申请日：1977-06-22

申请人： Kenichiro Miyahara ,  Nobuji Nakayama

发明人： Kenichiro Miyahara ,  Nobuji Nakayama

IPC分类号： D01F9/08 ,  C04B35/622 ,  C01F7/02 ,  C04B35/10

CPC分类号： C04B35/62236 ,  C04B35/6225

摘要： A process for the manufacture of an aluminum oxide or zirconium oxide fiber comprising fiberizing a liquid containing lactic acid and an oxidizable compound selected from basic aluminum chloride, zirconium acetate and zirconium oxychloride and the resulting fibers. The liquid optionally also contains colloidal silica.

摘要翻译： 一种制造氧化铝或氧化锆纤维的方法，包括使含有乳酸的液体和选自碱性氯化铝，乙酸锆和氯氧化锆的可氧化化合物纤维化，以及所得纤维。 液体任选地还含有胶体二氧化硅。

公开(公告)号：US20050236158A1

公开(公告)日：2005-10-27

申请号：US10516489

申请日：2003-06-02

申请人： Kenichiro Miyahara

发明人： Kenichiro Miyahara

IPC分类号： E21B33/08 ,  E21B7/00

CPC分类号： E21B33/085

摘要： A rotating diverter head for use on a blow out preventer stack of an oil, gas or geothermal well. While providing for sealing and rotation of a drill pipe through the head, the head additional includes a flange on which the head is rotatable. The flange connects the head to the stack whereupon it can be rotated to align a return flow line before being locked in position.

摘要翻译： 用于油，气或地热井的防喷器堆的旋转分流头。 当提供钻杆通过头部的密封和旋转时，附加的头部包括凸缘，头部可旋转。 法兰将头部连接到堆叠，在此之前，可以将其旋转以对准回流管线，然后再将其锁定到位。

公开(公告)号：US20060183625A1

公开(公告)日：2006-08-17

申请号：US10516849

申请日：2003-07-04

申请人： Kenichiro Miyahara

发明人： Kenichiro Miyahara

IPC分类号： C04B35/00

CPC分类号： C04B35/565 ,  C04B35/053 ,  C04B35/08 ,  C04B35/115 ,  C04B35/443 ,  C04B35/453 ,  C04B35/486 ,  C04B35/505 ,  C04B35/58 ,  C04B35/581 ,  C04B35/593 ,  C04B35/65 ,  C04B41/009 ,  C04B41/5062 ,  C04B41/5063 ,  C04B41/87 ,  C04B2111/0025 ,  C04B2111/80 ,  C04B2235/32 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/422 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/658 ,  C04B2235/6584 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/9623 ,  C04B2235/963 ,  C04B2235/9653 ,  C04B2235/9661 ,  C30B25/18 ,  G02B6/122 ,  H01L33/483 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12044 ,  H01L2924/15174 ,  H01L2924/15182 ,  H01L2924/16195 ,  C04B41/4531 ,  C04B35/10 ,  C04B35/48 ,  C04B35/584 ,  H01L2924/00014 ,  H01L2924/00

摘要： It found out that a single crystal thin film which is excellent in crystallinity and comprises as the main ingredients at least one of more materials selected from a gallium nitride, an indium nitride, and an aluminum nitride can form on a substrate of a sintered compact which comprises as the main ingredients an aluminum nitride, a ceramic material having the crystal structure of a hexagonal system or a trigonal system, and a ceramic material having optical permeability. The above finding has allowed the preparation of a light emitting device excellent in luminous efficiency, an optical, waveguide exhibiting low loss, and a substrate for light emitting device mounting capable of controlling a direction of luminescence emitted to a substrate exterior.

摘要翻译： 它发现结晶度优异并且包含作为主要成分的单晶薄膜可以在烧结体的基材上形成至少一种选自氮化镓，氮化铟和氮化铝的材料中的至少一种， 包括氮化铝，具有六方晶系或三角系的晶体结构的陶瓷材料和具有透光性的陶瓷材料的主要成分。 上述发现允许制备发光效率优异的发光装置，表现出低损耗的光学波导和用于发光装置安装的基板，其能够控制发射到基板外部的发光方向。

公开(公告)号：US5830570A

公开(公告)日：1998-11-03

申请号：US597349

申请日：1996-02-06

申请人： Yoshihiro Ohkawa ,  Makoto Ikeda ,  Kenichiro Miyahara ,  Yoshiaki Itoh

发明人： Yoshihiro Ohkawa ,  Makoto Ikeda ,  Kenichiro Miyahara ,  Yoshiaki Itoh

IPC分类号： C04B41/50 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  H01L23/15 ,  H05K1/03

CPC分类号： C04B41/009 ,  C04B41/5031 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  H01L23/15 ,  C04B2111/00844 ,  C04B2111/82 ,  H01L2924/0002 ,  H05K1/0306 ,  Y10T428/265

摘要： An aluminum nitride substrate composed of a sintered body base material composed mainly of aluminum nitride and an aluminum oxide layer formed on the surface of the base material, wherein at least one of the base material and the aluminum oxide layer contains at least one member selected from the group consisting of single substances, carbidies, nitrides, borides and oxides of Ti, V, Nb, Mo, W, Co and Ni. This aluminum oxide layer is formed by an oxidizing treatment of the base material, and a metal conductor layer is formed on this aluminum oxide layer. This substrate has a very high allusion to the metal conductor layer.

摘要翻译： 一种由主要由氮化铝构成的烧结体基材和形成在基材表面上的氧化铝层构成的氮化铝基材，其中至少一种基材和氧化铝层含有至少一种选自 由Ti，V，Nb，Mo，W，Co和Ni组成的单一物质，碳化物，氮化物，硼化物和氧化物组成的组。 该氧化铝层通过基材的氧化处理而形成，在该氧化铝层上形成金属导体层。 该衬底对金属导体层具有非常高的吸引力。

公开(公告)号：US5077245A

公开(公告)日：1991-12-31

申请号：US150080

申请日：1988-01-29

申请人： Kenichiro Miyahara

发明人： Kenichiro Miyahara

IPC分类号： C04B35/581

CPC分类号： C04B35/581

摘要： An aluminum nitride-based sintered body having a thermal conductivity of greater than 110 W/mK and a relative density of at least 90% and a process for the production thereof are disclosed. The sintered body contains minor amounts of at least one compound of a Group IIa metal and at least one compound of a Group IIIa metal of the Periodic Table and can be produced from an aluminum nitride starting powder prepared by direct nitriding of metallic aluminum powder and having a purity of at least 99%, an oxygen content of lower than 1.8%, and an Si content of at most 1.0% by mixing the starting powder with powdery sintering additives consisting of at least one metal or compound of a Group IIa metal such as Ca and at least one metal or compound of a Group IIIa metal such as Y, shaping the powder mixture, and baking the shaped mixture at a relatively low temperature.

摘要翻译： 公开了一种导热率大于110W / mK，相对密度至少为90％的氮化铝基烧结体及其制造方法。 该烧结体含有少量的至少一种IIa族金属化合物和至少一种元素周期表IIIa族金属化合物，并且可以由氮化铝起始粉末制备，其通过直接氮化金属铝粉末制备，并具有 通过将起始粉末与由IIa族金属的至少一种金属或化合物组成的粉末状烧结添加剂混合，例如至少99％的纯度，低于1.8％的氧含量和至多1.0％的Si含量， Ca和至少一种金属或IIIa族金属的化合物，例如Y，使粉末混合物成形，并在相对低的温度下烘烤成型混合物。

公开(公告)号：US5665473A

公开(公告)日：1997-09-09

申请号：US527225

申请日：1995-09-12

申请人： Tokio Okoshi ,  Yuka Kato ,  Hideki Okoshi ,  Kenichiro Miyahara ,  Masakatsu Maeda

发明人： Tokio Okoshi ,  Yuka Kato ,  Hideki Okoshi ,  Kenichiro Miyahara ,  Masakatsu Maeda

IPC分类号： H01L23/057 ,  H01L23/495 ,  B32B9/00

CPC分类号： H01L23/49537 ,  H01L23/057 ,  H01L24/49 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/20753 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10S428/901

摘要： A package for mounting a semiconductor device comprises a base plate and a conductive layer laminated onto the base plate via an adhesive layer. The modulus of elasticity at 25.degree. C. of the adhesive layer is 10 kg/mm.sup.2 or less.

摘要翻译： 用于安装半导体器件的封装包括基板和通过粘合剂层层压到基板上的导电层。 粘合剂层的25℃下的弹性模量为10kg / mm 2以下。

公开(公告)号：US5629559A

公开(公告)日：1997-05-13

申请号：US347484

申请日：1994-12-06

申请人： Kenichiro Miyahara

发明人： Kenichiro Miyahara

IPC分类号： H01L23/057 ,  H01L23/367 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H01L23/52

CPC分类号： H01L23/057 ,  H01L23/3675 ,  H01L23/49537 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/49 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/85099 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01065 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/20102 ,  H01L2924/20753 ,  H01L2924/30107 ,  H01L2924/3011

摘要： The present invention provides a package for mounting of semiconductor device, wherein:(a) a power layer, a ground layer and a signal layer are laminated via an intermediate layer including an insulating layer,(b) the power layer and the ground layer are each constituted by an inner lead area, an outer lead area and an electro-conductive area, the inner lead area and the outer lead area being not covered with the intermediate layer and being exposed and the electro-conductive area being interposed between the inner lead area and the outer lead area and covered with the intermediate layer, and(c) substantially all of the electro-conductive area of each of the power layer and the ground layer is constituted by a planar electro-conductive member. In this package, the self-inductances of the power layer and the ground layer are low and the capacitor formed by these layers has a large capacity; therefore, the power line and ground line noise is reduced.

摘要翻译： PCT No.PCT / JP94 / 00571 Sec。 371日期1994年12月6日第 102（e）日期1994年12月6日PCT 1994年4月6日PCT PCT。 公开号WO94 / 23448 日期：1994年10月13日本发明提供了一种用于安装半导体器件的封装，其中：（a）功率层，接地层和信号层经由包括绝缘层的中间层层叠，（b）功率层 接地层由内引线区域，外引线区域和导电区域构成，内引线区域和外引线区域不被中间层覆盖并被露出，导电区域为 插入在内引线区域和外引线区域之间并被中间层覆盖，（c）功率层和接地层中的每一个的基本上所有的导电区域由平面导电构件构成。 在该封装中，功率层和接地层的自感度低，由这些层形成的电容器容量大; 因此，电力线和地线噪声减小。

公开(公告)号：US5376601A

公开(公告)日：1994-12-27

申请号：US116812

申请日：1993-09-07

申请人： Yoshihiro Okawa ,  Kenichiro Miyahara

发明人： Yoshihiro Okawa ,  Kenichiro Miyahara

IPC分类号： C04B35/581 ,  C04B35/58 ,  C04B35/64

CPC分类号： C04B35/581

摘要： A molded article is prepared from an AlN powder of a high purity without adding sintering assistant, baked in a nitrogen atmosphere without containing carbon, and is further heat-treated in a nitrogen atmosphere containing carbon in order to remove impurities in the sintered product. There is obtained a highly pure and dense sintered product which comprises mainly a phase of aluminum nitride, which has an average grain size of greater than 9 .mu.m, cationic metal impurities other aluminum, and Si, Fe and Ca in amounts smaller than predetermined values. The sintered product exhibits a very small creep rate when stress is applied thereto at high temperatures and is used as a material for high temperature uses such as a baking jig. Owing to its excellent anti-creeping property at high temperatures, tile product is suitably used as a structural material subject to stress at high temperatures for extended periods of time. When used as a baking jig, in particular, the sintered product does not adversely affect the molded articles and exhibits excellent durability.

摘要翻译： 由不含添加烧结助剂的高纯度AlN粉末制备成型体，在不含碳的氮气气氛中进行烧成，并且在含有碳的氮气气氛中进一步热处理以除去烧结体中的杂质。 获得了高纯度且致密的烧结产品，其主要包括平均粒度大于9μm的氮化铝相，阳离子金属杂质，其它铝，Si，Fe和Ca的量小于预定值 。 当在高温下施加应力时，烧结产品具有非常小的蠕变速率，并且用作高温用途的材料如烘烤夹具。 由于其在高温下具有优异的抗蠕变性，所以瓦片产品适合用作在高温下长时间压力的结构材料。 特别是作为烘烤夹具使用时，烧结体不会对成形体产生不良影响，耐久性优异。

公开(公告)号：US5314850A

公开(公告)日：1994-05-24

申请号：US222381

申请日：1988-07-19

申请人： Kenichiro Miyahara

发明人： Kenichiro Miyahara

IPC分类号： C04B35/581 ,  C04B35/58

CPC分类号： C04B35/581

摘要： An aluminum nitride sintered body having a thermal conductivity of at least 100 W/mK, preferably at least 120 W/mK, more preferably at least 140 W/mK, and most preferably at least 160 W/mK is produced by baking with a sintering additive using an aluminum nitride starting powder of high purity derived by direct nitriding of metallic aluminum. The sintering additive is selected from compounds of Group IIa, IIIa, and IIIb metals of the periodic table and preferably it comprises predominantly Y.sub.2 O.sub.3 or a precursor thereof. In one embodiment, the starting powder and the sintering additive are slurried with a binder and an organic solvent and shaped into a sheet. The sheet, after drying and binder removal, is suitable for use in making multilayered ceramic substrates, ceramic heaters, radiators, and the like.

摘要翻译： 具有至少100W / mK，优选至少120W / mK，更优选至少140W / mK，最优选至少160W / mK的热导率的氮化铝烧结体通过烧结 添加剂使用通过直接氮化金属铝得到的高纯度的氮化铝起始粉末。 烧结添加剂选自周期表IIa，IIIa和IIIb族金属的化合物，优选主要包含Y 2 O 3或其前体。 在一个实施方案中，起始粉末和烧结添加剂用粘合剂和有机溶剂浆化并成形为片材。 干燥后的粘合剂除去后的片材适用于制造多层陶瓷基板，陶瓷加热器，散热器等。

公开(公告)号：US20060163605A1

公开(公告)日：2006-07-27

申请号：US11320873

申请日：2005-12-30

申请人： Kenichiro Miyahara

发明人： Kenichiro Miyahara

IPC分类号： H01L33/00

CPC分类号： C04B35/645 ,  C04B35/453 ,  C04B35/58 ,  C04B35/581 ,  C04B2235/32 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3205 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3869 ,  C04B2235/3873 ,  C04B2235/40 ,  C04B2235/401 ,  C04B2235/402 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/407 ,  C04B2235/408 ,  C04B2235/422 ,  C04B2235/428 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2235/9653 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406

摘要： A substrate for forming a thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the thin film. The use of the sintered compact composed mainly of a ceramic material, especially translucent sintered compact, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one member selected from among gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light emitting element excelling in luminous efficiency.

摘要翻译： 用于形成主要由氮化镓，氮化铟或氮化铝构成的薄膜的基板，所述基板由主要由陶瓷材料构成的烧结体组成; 以及配备有薄膜的薄膜基板。 使用主要由陶瓷材料，特别是半透明烧结体组成的烧结体作为基板，能够在其上形成主要由选自氮化镓，氮化铟和铝中的至少一种的高结晶单晶薄膜 氮化物。 因此，提供了具有高结晶性单晶薄膜的薄膜基板。 此外，使用主要由陶瓷材料构成的烧结体能够提供发光效率优异的发光元件。