专利检索 ap:("Keunhyuk Lee" OR "Oseob Jeon" OR "Seugwon Lim") AND inv:"Oseob Jeon" 第 1 页

1.

发明申请
POWER MODULE PACKAGE HAVING EXCELLENT HEAT SINK EMISSION CAPABILITY AND METHOD FOR MANUFACTURING THE SAME 有权

公开(公告)号：US20100176498A1

公开(公告)日：2010-07-15

申请号：US12730294

申请日：2010-03-24

申请人： Keunhyuk Lee , Oseob Jeon , Seugwon Lim

发明人： Keunhyuk Lee , Oseob Jeon , Seugwon Lim

IPC分类号： H01L23/34

CPC分类号： H01L23/49575 , C04B37/028 , C04B2237/343 , C04B2237/402 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L25/162 , H01L25/165 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/2076 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012

摘要： A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame.

2.

发明授权
Power module package having excellent heat sink emission capability and method for manufacturing the same 有权
标题翻译：功率模块封装具有优良的散热发射能力及其制造方法

公开(公告)号：US08890310B2

公开(公告)日：2014-11-18

申请号：US12730294

申请日：2010-03-24

申请人： Keunhyuk Lee , Oseob Jeon , Seungwon Lim

发明人： Keunhyuk Lee , Oseob Jeon , Seungwon Lim

IPC分类号： H01L23/495 , H01L23/10 , H01L23/433 , H01L25/16 , H01L23/00

CPC分类号： H01L23/49575 , C04B37/028 , C04B2237/343 , C04B2237/402 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L25/162 , H01L25/165 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/2076 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012

摘要： A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame.

摘要翻译： 功率模块封装包括电源电路元件，控制电路元件，引线框架，具有散热器和绝缘层的氧化铝衬底以及密封树脂。控制电路元件与电源电路元件电连接以控制电源电路元件内的芯片。引线框架在其边缘具有外部连接端子引线，并且具有附接有电源电路元件和控制电路元件的第一表面和用作传热路径的第二表面。散热器是由诸如铝的金属制成的板，电绝缘层至少形成在散热器的上表面上并由氧化铝制成。电绝缘层可以形成在散热器的整个表面上。这里，绝缘层通过粘合剂，在电力电路元件附接的下方的区域附着到引线框架的第一表面。此外，密封树脂封装电源电路元件和控制电路元件，引线框架和金属氧化物基板，并且暴露引线框架的外部连接端子。

3.

发明申请
POWER MODULE PACKAGE HAVING EXCELLENT HEAT SINK EMISSION CAPABILITY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：具有优异散热排放能力的功率模块封装及其制造方法

公开(公告)号：US20100013070A1

公开(公告)日：2010-01-21

申请号：US12565274

申请日：2009-09-23

申请人： Joosang Lee , Oseob Jeon , Keunhyuk Lee , Seungwon Lim

发明人： Joosang Lee , Oseob Jeon , Keunhyuk Lee , Seungwon Lim

IPC分类号： H01L23/498

CPC分类号： H01L23/49575 , C04B37/028 , C04B2237/343 , C04B2237/402 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L25/162 , H01L25/165 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/2076 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012

摘要： A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame.

摘要翻译： 功率模块封装包括电源电路元件，控制电路元件，引线框架，具有散热器和绝缘层的氧化铝衬底以及密封树脂。控制电路元件与电源电路元件电连接以控制电源电路元件内的芯片。引线框架在其边缘具有外部连接端子引线，并且具有附接有电源电路元件和控制电路元件的第一表面和用作传热路径的第二表面。散热器是由诸如铝的金属制成的板，电绝缘层至少形成在散热器的上表面上并由氧化铝制成。电绝缘层可以形成在散热器的整个表面上。这里，绝缘层通过粘合剂，在电力电路元件附接的下方的区域附着到引线框架的第一表面。此外，密封树脂封装电源电路元件和控制电路元件，引线框架和金属氧化物基板，并且暴露引线框架的外部连接端子。

4.

发明申请
Power module package having excellent heat sink emission capability and method for manufacturing the same 审中-公开
标题翻译：功率模块封装具有优良的散热发射能力及其制造方法

公开(公告)号：US20060056213A1

公开(公告)日：2006-03-16

申请号：US11208385

申请日：2005-08-19

申请人： Joosang Lee , Oseob Jeon , KeunHyuk Lee , Seungwon Lim

发明人： Joosang Lee , Oseob Jeon , KeunHyuk Lee , Seungwon Lim

IPC分类号： H02M1/00

CPC分类号： H01L23/49575 , C04B37/028 , C04B2237/343 , C04B2237/402 , H01L23/4334 , H01L24/45 , H01L24/48 , H01L25/162 , H01L25/165 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/2076 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012

摘要： A power module package includes a power circuit element, a control circuit element, a lead frame, an aluminum oxide substrate having a heat sink and an insulation layer, and a sealing resin. The control circuit element is electrically connected with the power circuit element to control chips within the power circuit element. The lead frame has external connection terminal leads in its edge and has a first surface to which the power circuit element and the control circuit element are attached and a second surface which is used as a heat transmission path. The heat sink is a plate made of metal such as aluminum and the electrical insulation layer is formed at least on an upper surface of the heat sink and made of aluminum oxide. The electrical insulation layer may be formed over an entire surface of the heat sink. Here, the insulation layer is attached to the second surface by an adhesive, on a region below where the power circuit element is attached, to the first surface of the lead frame. In addition, the sealing resin encloses the power circuit element and the control circuit element, the lead frame, and the metal oxide substrate and exposes the external connection terminals of the lead frame.

摘要翻译： 功率模块封装包括电源电路元件，控制电路元件，引线框架，具有散热器和绝缘层的氧化铝衬底以及密封树脂。控制电路元件与电源电路元件电连接以控制电源电路元件内的芯片。引线框架在其边缘具有外部连接端子引线，并且具有附接有电源电路元件和控制电路元件的第一表面和用作传热路径的第二表面。散热器是由诸如铝的金属制成的板，电绝缘层至少形成在散热器的上表面上并由氧化铝制成。电绝缘层可以形成在散热器的整个表面上。这里，绝缘层通过粘合剂，在电力电路元件附接的下方的区域附着到引线框架的第一表面。此外，密封树脂封装电源电路元件和控制电路元件，引线框架和金属氧化物基板，并且暴露引线框架的外部连接端子。

5.

发明授权
Semiconductor die package and method for making the same 有权
标题翻译：半导体管芯封装及其制造方法

公开(公告)号：US08664752B2

公开(公告)日：2014-03-04

申请号：US13430347

申请日：2012-03-26

申请人： Oseob Jeon , Yoonhwa Choi , Boon Huan Gooi , Maria Cristina B. Estacio , David Chong , Tan Teik Keng , Shibaek Nam , Rajeev Joshi , Chung-Lin Wu , Venkat Iyer , Lay Yeap Lim , Byoung-Ok Lee

发明人： Oseob Jeon , Yoonhwa Choi , Boon Huan Gooi , Maria Cristina B. Estacio , David Chong , Tan Teik Keng , Shibaek Nam , Rajeev Joshi , Chung-Lin Wu , Venkat Iyer , Lay Yeap Lim , Byoung-Ok Lee

IPC分类号： H01L23/495

CPC分类号： H01L24/29 , H01L21/561 , H01L23/3121 , H01L23/4951 , H01L23/49558 , H01L23/49562 , H01L23/49575 , H01L23/49861 , H01L24/32 , H01L24/36 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/0655 , H01L2223/54406 , H01L2223/54486 , H01L2224/16 , H01L2224/291 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29299 , H01L2224/293 , H01L2224/32057 , H01L2224/32225 , H01L2224/40245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45169 , H01L2224/45565 , H01L2224/456 , H01L2224/45644 , H01L2224/45669 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49113 , H01L2224/4943 , H01L2224/73204 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/83801 , H01L2224/8385 , H01L2224/85013 , H01L2224/97 , H01L2924/00013 , H01L2924/00014 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/1815 , H01L2924/19043 , H01L2924/30107 , H01L2224/85 , H01L2924/00 , H01L2924/0105 , H01L2924/01082 , H01L2924/00012 , H01L2224/13111 , H01L2924/0665 , H01L2224/29099 , H01L2224/29199 , H01L2224/37099

摘要： Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.

摘要翻译： 公开了半导体管芯封装。示例性半导体管芯封装包括预成型衬底。预成型基板可以具有附接到其上的半导体管芯，并且封装材料可以设置在半导体管芯上方。

6.

发明申请
High-Power Semiconductor Die Packages With Integrated Heat-Sink Capability and Methods of Manufacturing the Same 有权
标题翻译：具有集成散热能力的大功率半导体芯片封装及其制造方法

公开(公告)号：US20090166850A1

公开(公告)日：2009-07-02

申请号：US11968602

申请日：2008-01-02

申请人： Oseob Jeon , Chung-Lin Wu , Eddy Tjhia , Bigildis C. Dosdos

发明人： Oseob Jeon , Chung-Lin Wu , Eddy Tjhia , Bigildis C. Dosdos

IPC分类号： H01L21/50 , H01L23/40

CPC分类号： H01L23/49816 , H01L23/3128 , H01L23/3675 , H01L23/40 , H01L23/49562 , H01L23/49805 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/73 , H01L25/072 , H01L25/16 , H01L2224/16 , H01L2224/371 , H01L2224/37147 , H01L2224/3754 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48247 , H01L2224/732 , H01L2224/73253 , H01L2224/73255 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1305 , H01L2924/13091 , H01L2924/15311 , H01L2924/181 , H01L2924/19042 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207

摘要： An exemplary semiconductor die package of the invention has a metal-oxide substrate disposed between a first surface of a semiconductor die and a heat-sinking component, with a conductive die clip or one or more electrical interconnect traces disposed between the metal-oxide substrate and the first surface of the semiconductor die. The heat-sinking component may comprise a heat sink, or an adaptor plate to which a heat sink may be coupled. The conductive die clip or electrical trace(s) provides electrical connection(s) to the first surface of the semiconductor die, while the metal-oxide substrate electrically insulates the die from the heat-sinking component, and provides a path of high thermal conductivity between the die and the heat-sinking component. The second surface of the semiconductor die may be left free to connect to a circuit board, or a leadframe or interconnect substrate may be attached to it.

摘要翻译： 本发明的示例性半导体管芯封装具有设置在半导体管芯的第一表面和散热部件之间的金属氧化物衬底，其具有导电裸片夹或设置在金属氧化物衬底和金属氧化物衬底之间的一个或多个电互连迹线半导体芯片的第一表面。散热部件可以包括散热器或适配器板，散热器可以耦合到适配器板。导电芯片夹或电迹线为半导体管芯的第一表面提供电连接，同时金属氧化物衬底将电芯与散热部件绝缘，并提供高导热性的路径在模具和散热部件之间。半导体管芯的第二表面可以自由地连接到电路板，或者可以将引线框架或互连衬底附接到其上。

7.

发明授权
Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same 有权
标题翻译：具有设置在同一侧的源极/漏极触点的垂直MOSFET晶体管及其制造方法

公开(公告)号：US08487371B2

公开(公告)日：2013-07-16

申请号：US13074921

申请日：2011-03-29

申请人： Daniel M. Kinzer , Steven Sapp , Chung-Lin Wu , Oseob Jeon , Bigildis Dosdos

发明人： Daniel M. Kinzer , Steven Sapp , Chung-Lin Wu , Oseob Jeon , Bigildis Dosdos

IPC分类号： H01L29/66 , H01L23/62 , H01L27/088 , H01L21/338

CPC分类号： H01L29/7827 , H01L24/13 , H01L29/41766 , H01L29/66666 , H01L29/7809 , H01L29/7811 , H01L29/7813 , H01L2224/131 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/00

摘要： Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent electrical performance with low drain-to-source resistance RDS(on) include using a two-metal drain contact technique. The RDS(on) is further improved by using a through-silicon-via (TSV) technique to form a drain contact or by using a copper layer closely connected to the drain drift.

摘要翻译： 具有晶体管的晶体管的晶体管的晶体管的一侧制造晶圆级芯片级封装（WLCSP）器件的系统和方法仍然具有优异的电气性能，低漏极 - 源极电阻RDS（on）包括使用双金属漏极接触技术。通过使用穿硅通孔（TSV）技术来形成漏极接触或通过使用紧密连接到漏极漂移的铜层来进一步改善RDS（on）。