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    Resin encapsulated semiconductor device
    1.
    发明授权
    Resin encapsulated semiconductor device 失效
    树脂封装半导体器件

    公开(公告)号：US4758875A

    公开(公告)日：1988-07-19

    申请号：US266198

    申请日：1981-05-22

    申请人： Koji Fujisaki ,  Akio Nishikawa ,  Shunichi Numata ,  Hiroshi Suzuki ,  Takeshi Komaru ,  Daisuke Makino

    发明人： Koji Fujisaki ,  Akio Nishikawa ,  Shunichi Numata ,  Hiroshi Suzuki ,  Takeshi Komaru ,  Daisuke Makino

    IPC分类号： C08G73/00 ,  C08G73/10 ,  H01L21/312 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48 ,  H01L23/28 ,  H01L29/34

    CPC分类号： H01L21/312 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/3025

    摘要： Disclosed is a resin encapsulated semiconductor memory device comprising a semiconductor memory element, a package encapsulating the memory element and an .alpha.-rays shielding layer made from a water-resistant aromatic polyimide polymer, interposed between the memory element and the package, the aromatic polyimide polymer having a saturated water absorption rate of 1% or less. The polyimide polymer is exemplified as the polymer having the following recurring units: ##STR1## wherein R is an aliphatic or aromatic group; R.sub.1 and R.sub.2 are independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or CF.sub.3 ; and R.sub.3 to R.sub.6 are independently a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. The disclosure is also concerned with resin encapsulated semiconductor devices in which the aromatic polyimide polymer of low water absorption is used as an insulating layer or passivation film.

    摘要翻译： 公开了一种树脂封装的半导体存储器件，其包括半导体存储元件，封装存储元件的封装以及介于该存储元件与封装之间的由防水芳香族聚酰亚胺聚合物制成的α-阵列屏蔽层，芳族聚酰亚胺聚合物 饱和吸水率为1％以下。 聚酰亚胺聚合物作为具有以下重复单元的聚合物被列举：其中R是脂族或芳族基团; R1和R2独立地为氢原子，具有1至4个碳原子的烷基或CF 3; R 3〜R 6独立地为氢原子，卤原子或碳原子数为1〜4的烷基。 本发明还涉及使用低吸水性的芳族聚酰亚胺聚合物作为绝缘层或钝化膜的树脂封装的半导体器件。

    Composition for protective coating material
    3.
    发明授权
    Composition for protective coating material 失效
    保护涂层材料的组成

    公开(公告)号：US4645688A

    公开(公告)日：1987-02-24

    申请号：US679460

    申请日：1984-12-07

    申请人： Daisuke Makino ,  Hidetaka Sato ,  Hiroshi Suzuki ,  Shun-ichiro Uchimura ,  Hiroshi Suzuki

    发明人： Daisuke Makino ,  Hidetaka Sato ,  Hiroshi Suzuki ,  Shun-ichiro Uchimura ,  Hiroshi Suzuki

    IPC分类号： C08G73/10 ,  C08G77/54 ,  H01B3/30 ,  H01B3/46 ,  H01L23/29 ,  B05D5/12

    CPC分类号： C08G77/54 ,  C08G73/1042 ,  C08G73/106 ,  H01B3/303 ,  H01B3/46 ,  H01L23/296 ,  H01L2924/0002

    摘要： There are disclosed a composition for protective coating material, preferably for a protective coating material of a semiconductor device which is constituted of principal elements of a semiconductor memory element, an encapsulating layer containing an inorganic material for encapsulating said element and a layer of a cured protective coating material arranged between said memory element and said encapsulating layer, which is composed of a polyamide acid obtained by the reaction of a diaminosiloxane, an organic diamine containing no silicon and an organic tetrabasic acid dianhydride, and a semiconductor device having a layer of a cured protective coating material composed of a polyimide-silicone copolymer obtained by dehydrating ring closure of the above-mentioned polyamide acid.

    摘要翻译： 公开了一种用于保护涂层材料的组合物，优选用于半导体器件的保护涂层材料，其由半导体存储元件的主要元件，包含用于封装所述元件的无机材料的封装层和固化保护层 布置在所述存储元件和所述封装层之间的涂料，其由通过二氨基硅氧烷，不含硅的有机二胺和有机四元酸二酐反应获得的聚酰胺酸和具有固化的层的半导体器件 由通过上述聚酰胺酸脱水闭环得到的聚酰亚胺 - 硅氧烷共聚物构成的保护涂料。