公开(公告)号：US5899376A

公开(公告)日：1999-05-04

申请号：US677392

申请日：1996-07-09

申请人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： B23K1/20 ,  H05K3/34

CPC分类号： B23K1/203 ,  H01L24/11 ,  H05K3/3489 ,  B23K2201/40 ,  H01L2924/01322

摘要： A process of transferring a flux on electrodes of a semiconductor chip, a film carrier, or a substrate, the process comprising: using a transfer apparatus including a transfer baseplate having protrusions corresponding to said electrodes; dipping the tips of the protrusions of the transfer baseplate in a flux bath to cause the flux to stick to the tips; then aligning the protrusions of the transfer baseplate with the electrodes; and transferring the stuck flux onto the electrodes from the tips.

摘要翻译： 一种在半导体芯片，薄膜载体或基板的电极上传送磁通的方法，该方法包括：使用包括具有对应于所述电极的突起的转印基板的转印装置; 将转移基板的突起的尖端浸入助熔剂槽中以使焊剂粘附到尖端; 然后将转印基板的突起与电极对准; 并将粘附的助焊剂从尖端转移到电极上。

公开(公告)号：US5765744A

公开(公告)日：1998-06-16

申请号：US678474

申请日：1996-07-09

申请人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kouhei Tatumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： B23K3/06 ,  H01L21/48 ,  H01L21/60 ,  H01L21/68 ,  H05K3/34 ,  B23K1/00 ,  B23K31/02

CPC分类号： H05K3/3478 ,  B23K3/0623 ,  H01L21/4853 ,  H01L21/6835 ,  H01L24/11 ,  B23K2201/36 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H05K2203/0113 ,  H05K2203/0278 ,  H05K2203/0338 ,  H05K2203/041 ,  H05K2203/082

摘要： A process of producing small metal bumps includes the steps of simultaneously holding small metal balls on an arrangement baseplate in the positions corresponding to those of electrodes of a semiconductor chip, a film carrier, or a substrate; aligning the small metal balls held on the arrangement baseplate with the electrodes; lightly pressing the small metal balls against the electrodes; to provisionally fix the balls to the electrodes; and pressing the provisionally fixed small metal balls to flatten the pressed surfaces of the small metal balls, and at the same time, to bond the small metal balls to the electrodes.

摘要翻译： 制造小金属凸块的工艺包括以下步骤：在与半导体芯片，薄膜载体或基板的电极对应的位置上同时将小金属球保持在布置基板上; 将安置基板上保持的小金属球与电极对准; 轻轻地将小金属球压在电极上; 将球临时固定到电极; 并且按压临时固定的小金属球来使小金属球的压制表面变平，同时将小金属球粘合到电极上。

公开(公告)号：US07285486B2

公开(公告)日：2007-10-23

申请号：US11094051

申请日：2005-03-30

申请人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

发明人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

IPC分类号： H01L21/44

CPC分类号： B23K3/0623 ,  B23K2101/40 ,  H01L21/4853 ,  H01L21/6838 ,  H01L24/11 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/04953 ,  H05K3/3478 ,  H05K2203/041 ,  H05K2203/082

摘要： Balls are sucked onto a carrier board so as to be temporarily arranged in a ball arrangement region of the board, and then the balls are transferred and bonded onto an objective substance with their positions being adjusted. Gas blow is applied to the temporarily arranged balls or alternatively the temporarily arranged balls are sucked, so as to remove excess balls other than balls that have been exactly sucked onto the ball arrangement region. Cooperation with application of fine vibration to the carrier board makes the removal of the excess balls more efficient.

摘要翻译： 将球吸附到载体板上，以便暂时地布置在板的球形布置区域中，然后将球转移并粘合到目标物质上并调整它们的位置。 对临时布置的球施加气体吹动，或者临时布置的球被吸入，以便去除已经精确吸入球配置区域的球以外的多余的球。 携带精细振动的合作使得多余的滚珠更加有效的去除。

公开(公告)号：US07045388B2

公开(公告)日：2006-05-16

申请号：US09254119

申请日：1997-08-27

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： H01L21/48 ,  B23K31/00 ,  H01R43/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  Y10T29/49222 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05611 ,  H01L2224/05669 ,  H01L2224/11 ,  H01L2924/00012

摘要： A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps (3) which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.

摘要翻译： 一种半导体器件（1），包括形成在半导体芯片（2）上的电极和由球形并且具有给定尺寸并且与电极（5）粘合的低熔点金属球组成的凸块（3）。 电极（5）由Cu或Cu合金，Al或Al合金或Au或Au合金的电极材料形成。 当电极材料由Al或Al合金构成时，电极在Al或Al合金的电极材料层上含有至少一层由金属或金属合金（优选金属选自Ti ，W，Ni，Cr，Au，Pd，Cu，Pt，Ag，Sn或Pb，或这些金属的合金）。 低熔点金属球（3）优选用助焊剂粘合到电极（5）上。 粘结到各个电极（3）上的粘合剂的低熔点金属球（3）也可以在使用前被回流以形成半球形凸块（10）。

公开(公告)号：US06509645B2

公开(公告)日：2003-01-21

申请号：US09350125

申请日：1999-07-09

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

IPC分类号： H01L2348

CPC分类号： H01L29/0657 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/065 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/1017 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

摘要： A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane. Spherical bumps constituting a group to be connected to the outside protrude above the spherical semiconductor element such that a predetermined gap is formed between a plane or a spherical surface capable of contacting the spherical bumps and the surface of the spherical semiconductor element. The spherical semiconductor device is connected to various circuit boards or another semiconductor device through the spherical bumps. This affords easy and accurate electrical connections to the outside.

公开(公告)号：US20080032495A1

公开(公告)日：2008-02-07

申请号：US11906388

申请日：2007-10-01

申请人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

发明人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

IPC分类号： H01L21/441

CPC分类号： B23K3/0623 ,  B23K2101/40 ,  H01L21/4853 ,  H01L21/6838 ,  H01L24/11 ,  H01L2224/05573 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/04953 ,  H05K3/3478 ,  H05K2203/041 ,  H05K2203/082

摘要： Balls are sucked onto a carrier board so as to be temporarily arranged in a ball arrangement region of the board, and then the balls are transferred and bonded onto an objective substance with their positions being adjusted. Gas blow is applied to the temporarily arranged balls or alternatively the temporarily arranged balls are sucked, so as to remove excess balls other than balls that have been exactly sucked onto the ball arrangement region. Cooperation with application of fine vibration to the carrier board makes the removal of the excess balls more efficient.

摘要翻译： 将球吸附到载体板上，以便暂时地布置在板的球形布置区域中，然后将球转移并粘合到目标物质上并调整它们的位置。 对临时布置的球施加气体吹动，或者临时布置的球被吸入，以便去除已经精确吸入球配置区域的球以外的多余的球。 携带精细振动的合作使得多余的滚珠更加有效的去除。

公开(公告)号：US06909182B2

公开(公告)日：2005-06-21

申请号：US10255759

申请日：2002-09-27

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino ,  Nobuo Takeda ,  Atsuyuki Fukano

IPC分类号： H01L23/485 ,  H01L25/065 ,  H01L29/06 ,  H01L23/48

CPC分类号： H01L29/0657 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/065 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/1017 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48

摘要： A spherical semiconductor device includes a spherical semiconductor element having one or more electrodes on its surface. Spherical conductive bumps are formed at the positions of the electrodes. The electrodes are so arranged as to contact a common plane. Spherical bumps constituting a group to be connected to the outside protrude above the spherical semiconductor element such that a predetermined gap is formed between a plane or a spherical surface capable of contacting the spherical bumps and the surface of the spherical semiconductor element. The spherical semiconductor device is connected to various circuit boards or another semiconductor device through the spherical bumps. This affords easy and accurate electrical connections to the outside.

摘要翻译： 一种球形半导体器件包括其表面上具有一个或多个电极的球形半导体元件。 在电极的位置处形成球形导电凸块。 电极被布置为接触公共平面。 构成与外部连接的组的球形凸块突出在球形半导体元件上方，使得能够在能够接触球面凸块的平面或球面之间形成预定间隙，并且球形半导体元件的表面。 球形半导体器件通过球形凸块连接到各种电路板或另一半导体器件。 这提供了容易和准确的电连接到外部。

公开(公告)号：US06884708B2

公开(公告)日：2005-04-26

申请号：US09254118

申请日：1997-08-27

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： H01L23/50 ,  H01L21/48 ,  H01L23/495 ,  H01L21/44 ,  H05K3/34

CPC分类号： H01L23/49582 ,  H01L21/4821 ,  H01L21/4846 ,  H01L2924/0002 ,  Y10T29/49142 ,  Y10T29/49144 ,  H01L2924/00

摘要： The object of the present invention is to provide a free and precise control of the plating amount while easily determining a selected portion to be plated.Small balls 24 are arranged at, and adhered or bonded to, via holes 22 of a TAB tape 21 and the small balls 24 are then melted so that a copper wiring 23 exposed at the via holes 22 of the TAB tape 21 can be selectively plated with a different metal to enable selected portions of a substrate for electronic devices to be partially plated easily and precisely.

摘要翻译： 本发明的目的是提供对电镀量的自由精确控制，同时容易地确定所选择的被电镀部分。 小球24被布置在TAB带21的通孔22上并被粘接或粘合，然后使小球24熔化，使得露出在TAB带21的通孔22上的铜布线23能够被选择性地镀覆 具有不同的金属以使得用于电子器件的基板的选定部分能够容易且精确地部分地镀覆。

公开(公告)号：US06571007B1

公开(公告)日：2003-05-27

申请号：US09355517

申请日：1999-07-30

申请人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

发明人： Kenji Shimokawa ,  Eiji Hashino ,  Kohei Tatsumi

IPC分类号： G06K900

CPC分类号： H05K3/3478 ,  H01L21/4853 ,  H01L24/11 ,  H01L2224/05624 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01054 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15788 ,  H05K1/0269 ,  H05K2201/0108 ,  H05K2203/0338 ,  H05K2203/041 ,  H05K2203/082 ,  H01L2924/00 ,  H01L2924/00014

摘要： A ball-arranging substrate comprising a substrate with a main surface, a plurality of ball-arranging holes formed on the main surface for sucking and holding minute electroconductive balls at the locations corresponding to those of electrodes formed on a semiconductor device or a printed circuit board, wherein when light illuminates the ball-arranging surface to allow optical recognition of the arrangement of the minute electroconductive balls by means of the light reflected by the minute electroconductive balls and by the main surface, the wave length of the light of the light source is set in the range of 300 to 900 nm, and the reflectivity is made not more than 50% based on the light source. A reflective mirror should be provided on the rear surface of the substrate opposite to the light source, in the case when the substrate is transparent to the irradiated light.

摘要翻译： 一种球形排列衬底，包括具有主表面的衬底，多个球形排列孔，形成在主表面上，用于在与形成在半导体器件或印刷电路板上的电极相对应的位置处吸引并保持微小的导电球 其中，当光照亮所述球排列表面以允许通过由所述微小导电球反射的光和所述主表面对所述微小导电球的布置进行光学识别时，所述光源的光的波长为 设定在300〜900nm的范围内，并且基于光源的反射率不大于50％。 在基板对照射光透明的情况下，应在基板的与光源相对的背面上设置反射镜。

公开(公告)号：US07045389B1

公开(公告)日：2006-05-16

申请号：US09632910

申请日：2000-08-04

申请人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

发明人： Kohei Tatsumi ,  Kenji Shimokawa ,  Eiji Hashino

IPC分类号： H01L21/48 ,  H01L23/48 ,  B23K31/00 ,  H01R43/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  Y10T29/49222 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05611 ,  H01L2224/05669 ,  H01L2224/11 ,  H01L2924/00012

摘要： A semiconductor device (1) comprising electrodes formed on a semiconductor chip (2) and bumps (3) which consist of a low melting point metal ball spherically formed and having a given size and which are adhesive bonded to the electrodes (5). The electrodes (5) are formed from an electrode material of Cu or a Cu alloy, Al or an Al alloy, or Au or a Au alloy. When the electrode material is composed of Al or an Al alloy, the electrodes contain, on the electrode material layer of Al or an Al alloy, at least one layer (6) composed of a metal or metal alloy (preferably a metal selected form Ti, W, Ni, Cr, Au, Pd, Cu, Pt, Ag, Sn or Pb, or an alloy of these metals) having a melting point higher than the electrode material. The low melting point metal balls (3) are adhesive bonded to the electrodes (5) preferably with a flux. The low melting point metal balls (3) adhesive bonded to the respective electrodes (3) may also be reflowed to form semispherical bumps (10) before use.

摘要翻译： 一种半导体器件（1），包括形成在半导体芯片（2）上的电极和由球形并且具有给定尺寸并且与电极（5）粘合的低熔点金属球组成的凸块（3）。 电极（5）由Cu或Cu合金，Al或Al合金或Au或Au合金的电极材料形成。 当电极材料由Al或Al合金构成时，电极在Al或Al合金的电极材料层上含有至少一层由金属或金属合金（优选金属选自Ti ，W，Ni，Cr，Au，Pd，Cu，Pt，Ag，Sn或Pb，或这些金属的合金）。 低熔点金属球（3）优选用助焊剂粘合到电极（5）上。 粘结到各个电极（3）上的粘合剂的低熔点金属球（3）也可以在使用前被回流以形成半球形凸块（10）。