公开(公告)号：US09017479B2

公开(公告)日：2015-04-28

申请号：US12181402

申请日：2008-07-29

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B35/00 ,  C30B11/04 ,  C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B29/40 ,  C30B7/00

CPC分类号： C30B9/10 ,  C30B7/00 ,  C30B19/02 ,  C30B19/06 ,  C30B29/406 ,  C30B35/002 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024 ,  Y10T117/1064 ,  Y10T117/1096

摘要： The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

摘要翻译： 该装置具有用于存储溶液的坩埚; 用于存储坩埚的内部容器; 用于存储内部容器的加热容器，包括加热元件的加热容器，设置有加热元件的容器主体和与容器主体组合的盖子; 以及用于储存所述加热容器并用于装入至少包含氮气的气体的压力容器。 盖子还具有与容器主体相对于水平面倾斜的配合表面。

公开(公告)号：US08657955B2

公开(公告)日：2014-02-25

申请号：US12462429

申请日：2009-08-03

申请人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

发明人： Makoto Iwai ,  Takanao Shimodaira ,  Yoshihiko Yamamura ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Shiro Yamasaki

IPC分类号： C30B11/02

CPC分类号： C30B29/406 ,  C30B9/12

摘要： It is provided a melt composition for growing a gallium nitride single crystal by flux method. The melt composition contains gallium, sodium and barium, and a content of barium is 0.05 to 0.3 mol % with respect to 100 mol % of sodium.

摘要翻译： 提供一种通过助熔剂生长氮化镓单晶的熔融组合物。 熔融组合物含有镓，钠和钡，相对于100摩尔％的钠，钡的含量为0.05〜0.3摩尔％。

公开(公告)号：US08223543B2

公开(公告)日：2012-07-17

申请号：US13193968

申请日：2011-07-29

申请人： Makoto Iwai ,  Hiroshi Nakamura

发明人： Makoto Iwai ,  Hiroshi Nakamura

IPC分类号： G11C16/04

CPC分类号： G11C16/3459 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3436 ,  G11C16/3454

摘要： A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.

摘要翻译： 存储器包括第一和第二选择栅极晶体管，存储器单元，源极线，位线，连接到作为验证读取的目标的所选存储单元的选定字线，连接的未选择字线 到除所选存储单元之外的未选择的存储单元，用于产生提供给所选择的字线的所选择的读取电位并产生大于所选择的读取电位的未被选择的读取电位的电位产生电路， 以及控制电路，其通过验证被选择的存储器单元的单元电流属于两个值隔离的三个区域中的哪个区域属于三个组中的一个，将选择的存储单元的阈值电压分类为三个组中的一个 当所选择的读取电位为第一值时。

公开(公告)号：US08123856B2

公开(公告)日：2012-02-28

申请号：US12225550

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/00 ,  C30B19/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

摘要翻译： 在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。 提供本发明的装置用于制造III族氮化物基化合物半导体。 该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于 将从外部容器外部至少含有氮气的气体进料到反应器中。 进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

公开(公告)号：US20110299339A1

公开(公告)日：2011-12-08

申请号：US13210431

申请日：2011-08-16

申请人： Makoto Iwai ,  Yoshihisa Watanabe

发明人： Makoto Iwai ,  Yoshihisa Watanabe

IPC分类号： G11C16/26

CPC分类号： G11C16/0483 ,  G11C11/5642 ,  G11C16/26

摘要： A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.

摘要翻译： 非易失性半导体存储器包括：存储单元单元，包括具有电荷累积层和控制电极的多个存储单元，所述存储单元串联电连接; 多个字线，其各自电连接到所述多个存储单元的所述控制电极; 在所述存储单元单元的一端电连接到所述存储单元的源极线; 在所述存储单元单元的另一端电连接到所述存储单元的位线; 以及控制信号生成电路，其在数据读出操作期间，从连接到未选择的存储器的未选择的字线的选择时刻开始，选择连接到所述存储单元的所述存储单元的字线的定时。

公开(公告)号：US20110176366A1

公开(公告)日：2011-07-21

申请号：US12978878

申请日：2010-12-27

申请人： Rieko TANAKA ,  Makoto Iwai

发明人： Rieko TANAKA ,  Makoto Iwai

IPC分类号： G11C16/04 ,  G11C16/26

CPC分类号： G11C16/0408 ,  G11C16/26

摘要： An embodiment of the invention provides a semiconductor storage device including a NAND string, a SEN node, and a capacitor. The NAND string includes plural series-connected memory cells, and one end of the NAND string is connected to a bit line while the other end is connected to a common source line. The SEN node is configured to be able to be electrically connected to a voltage source and the bit line. In the capacitor, one end is connected to the SEN node while the other end is connected to a CLK node to which a voltage within a predetermined range is applied. A discharge rate of the SEN node is enhanced by decreasing a capacitance during discharge of the SEN node only when a selected memory cell selected from the plural memory cells is an on-cell.

摘要翻译： 本发明的实施例提供一种包括NAND串，SEN节点和电容器的半导体存储装置。 NAND串包括多个串联存储单元，并且NAND串的一端连接到位线，而另一端连接到公共源极线。 SEN节点被配置为能够电连接到电压源和位线。 在电容器中，一端连接到SEN节点，而另一端连接到施加了预定范围内的电压的CLK节点。 只有当从多个存储单元中选择的所选择的存储单元是开小区时，通过减少SEN节点的放电期间的电容来增强SEN节点的放电率。

公开(公告)号：US20110040000A1

公开(公告)日：2011-02-17

申请号：US12521610

申请日：2007-12-28

申请人： Takeaki Saiki ,  Makoto Iwai ,  Haruhiko Furukawa ,  Anil Kumar Tomar

发明人： Takeaki Saiki ,  Makoto Iwai ,  Haruhiko Furukawa ,  Anil Kumar Tomar

IPC分类号： C08K5/541 ,  C07F7/08

CPC分类号： C07F7/1804

摘要： A bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide, i.e., a polysulfide that contains bonded hydroxypolyalkyleneoxy groups instead of alkoxy groups in the bis(trialkoxysilylalkyl) polysulfide; a method of manufacturing of the aforementioned polysulfide by heating a bis(trialkoxysilylalkyl) polysulfide and a polyalkyleneglycol; a tire rubber additive to a tire rubber composition that comprises a bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide alone or a mixture of bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide and a polyalkyleneglycol; and a tire rubber composition that contains the aforementioned additive.

摘要翻译： 双（三（羟基聚亚烷氧基）甲硅烷基烷基]多硫化物，即在双（三烷氧基甲硅烷基烷基）多硫化物中含有键合的羟基聚亚烷基氧基代替烷氧基的多硫化物; 通过加热双（三烷氧基甲硅烷基烷基）多硫化物和聚亚烷基二醇制备上述多硫化物的方法; 包含单独的双[三（羟基亚烷基氧基）甲硅烷基烷基]多硫化物或双[三（羟基聚亚烷基氧基）甲硅烷基烷基]多硫化物和聚亚烷基二醇的混合物的轮胎橡胶组合物的轮胎橡胶添加剂; 和含有上述添加剂的轮胎橡胶组合物。

公开(公告)号：US20100301358A1

公开(公告)日：2010-12-02

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L29/20 ,  C30B9/12 ,  H01L29/772 ,  H01L33/30 ,  H01L31/0304 ,  H01L21/20

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US07833347B2

公开(公告)日：2010-11-16

申请号：US12212722

申请日：2008-09-18

申请人： Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B11/00 ,  C30B7/00

CPC分类号： C30B9/00 ,  C30B29/403 ,  C30B35/00 ,  Y10T117/1096

摘要： A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber disposed inside the pressure vessel and outside the crucible are used to grow the nitride single crystal.

摘要翻译： 使用含有易氧化材料的生长溶液来生产氮化物单晶。 用于储存生长溶液的坩埚，用于储存坩埚的压力容器和至少含有氮气的装置以及设置在压力容器内部和坩埚外部的氧吸收器用于生长氮化物单晶。

公开(公告)号：US20100247418A1

公开(公告)日：2010-09-30

申请号：US12662006

申请日：2010-03-26

申请人： Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： C01B21/06

CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625

摘要： An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

摘要翻译： 本发明的目的是通过Na通量法有效地添加Ge生产GaN。 在坩埚中，放置晶种衬底，使得衬底的一端保留在支撑基底上，由此籽晶衬底相对于坩埚的底表面保持倾斜，并且将镓固体和锗固体放置在 晶种基板与坩埚底面之间的空间。 然后，将钠固体置于晶种衬底上。 通过使用这种布置，当GaN晶体通过Na通量法在籽晶衬底上生长时，锗在形成钠 - 锗合金之前溶解在熔融镓中。 因此，GaN晶体可以有效地掺杂Ge。