LIQUID PURIFICATION SYSTEM
    1.
    发明申请
    LIQUID PURIFICATION SYSTEM 有权
    液体净化系统

    公开(公告)号:US20150307364A1

    公开(公告)日:2015-10-29

    申请号:US14265221

    申请日:2014-04-29

    IPC分类号: C02F1/00

    摘要: A liquid purification system is provided. Although not limited to water, the purification system is especially suitable for water. The purification system utilizes a vessel having antimicrobial inner wall load bearing surfaces and/or antimicrobial (antibacterial, anti-fungal, anti-mold, etc.) interior non-load bearing surfaces. When the liquid moves within the vessel and contacts the antimicrobial surfaces, the liquid becomes purified or sanitized. The inner wall load bearing surfaces and non-load bearing interior surfaces of the vessel may be manufactured from a host polymer that has antimicrobial organo-metallic additives which form a solid-solution with the host polymer and are distributed homogeneously throughout the host polymer. The host polymer matrix may be an organic material, an inorganic material or an organic-inorganic material blend. The antimicrobial agent polymer matrix may be located in localized zones within the vessel.

    摘要翻译: 提供液体净化系统。 净化系统虽然不限于水,但特别适用于水。 净化系统利用具有抗微生物内壁承载表面和/或抗微生物(抗菌,抗真菌,防霉等)内部非承载表面的容器。 当液体在容器内移动并接触抗微生物表面时,液体被净化或消毒。 容器的内壁承载表面和非承载内表面可以由具有抗微生物有机金属添加剂的主体聚合物制造,所述抗微生物有机金属添加剂与主体聚合物形成固溶体并且均匀分布在整个主体聚合物中。 主体聚合物基质可以是有机材料,无机材料或有机 - 无机材料混合物。 抗微生物剂聚合物基质可以位于容器内的局部区域中。

    Method and Apparatus to Facilitate Testing of Printed Semiconductor Devices
    2.
    发明申请
    Method and Apparatus to Facilitate Testing of Printed Semiconductor Devices 审中-公开
    促进印刷半导体器件测试的方法和装置

    公开(公告)号:US20090098668A1

    公开(公告)日:2009-04-16

    申请号:US12270544

    申请日:2008-11-13

    IPC分类号: H01L21/66 H01L21/302

    CPC分类号: H01L22/14 H01L51/0005

    摘要: A printing platform receives (102) (preferably in-line with a semiconductor device printing process (101)) a substrate having at least one semiconductor device printed thereon and further having a test structure printed thereon, which test structure comprises at least one printed semiconductor layer. These teachings then provide for the automatic testing (103) of the test structure with respect to at least one static (i.e., relatively unchanging) electrical characteristic metric. The static electrical characteristic metric (or metrics) of choice will likely vary with the application setting but can include, for example, a measure of electrical resistance, a measure of electrical reactance, and/or a measure of electrical continuity. Optionally (though preferably) the semiconductor device printing process itself is then adjusted (105) as a function, at least in part, of this metric.

    摘要翻译: 印刷平台接收(优选地与半导体器件印刷工艺(101)成直角))具有印刷在其上的至少一个半导体器件并且还具有印刷在其上的测试结构的衬底,该测试结构包括至少一个印刷半导体 层。 然后,这些教导提供了关于至少一个静态(即,相对不变的)电特性度量的测试结构的自动测试(103)。 选择的静态电特性度量(或度量)可能随着应用设置而变化,但是可以包括例如电阻的测量,电抗的测量和/或电连续性的测量。 可选地(尽管优选地),然后至少部分地基于该度量来调整(105)半导体器件打印过程本身。

    Nanoparticle Semiconductor Device and Method for Fabricating
    3.
    发明申请
    Nanoparticle Semiconductor Device and Method for Fabricating 审中-公开
    纳米粒子半导体器件及其制造方法

    公开(公告)号:US20090057662A1

    公开(公告)日:2009-03-05

    申请号:US11846805

    申请日:2007-08-29

    IPC分类号: H01L29/12 H01L21/20

    摘要: A low-temperature process for creating a semiconductive device by printing a liquid composition containing semiconducting nanoparticles. The semiconductive device is formed on a polymeric substrate by printing a composition that contains nanoparticles of inorganic semiconductor suspended in a carrier, using a graphic arts printing method. The printed deposit is then heated to remove substantially all of the carrier from the printed deposit. The low-temperature process does not heat the substrate or the printed deposit above 300° C. The mobility of the resulting semiconductive device is between about 10 cm2/Vs and 200 cm2/Vs.

    摘要翻译: 通过印刷含有半导体纳米颗粒的液体组合物来产生半导体器件的低温方法。 使用印刷技术印刷方法,通过印刷含有悬浮在载体中的无机半导体纳米颗粒的组合物,在聚合物基材上形成半导体装置。 然后加热印刷的沉积物以从印刷的沉积物中基本上除去所有的载体。 低温工艺不会将衬底或印刷沉积物加热到300℃以上。所得半导体器件的迁移率在约10cm 2 / Vs至200cm 2 / Vs之间。

    Organic semiconductor inverting circuit
    5.
    发明授权
    Organic semiconductor inverting circuit 失效
    有机半导体反相电路

    公开(公告)号:US07030666B2

    公开(公告)日:2006-04-18

    申请号:US10788627

    申请日:2004-02-27

    IPC分类号: H03B1/00 H03K3/00

    CPC分类号: H03K19/08

    摘要: An organic semiconductor inverting circuit includes at least three organic transistors, an output terminal (110, 210, 310, 410), a reference supply voltage input (115, 215, 315, 415), a first positive supply voltage input (120, 220, 320, 420), and a negative supply voltage input (125, 225, 325, 425). One of the three organic transistors is an input transistor having a gate to which is coupled an input terminal (105, 205, 305, 405). The output terminal (110, 210, 310, 410) is coupled to a first electrode of at least one of the at least three organic transistors.

    摘要翻译: 有机半导体反相电路包括至少三个有机晶体管,输出端(110,210,310,410),参考电源电压输入(115,215,315,415),第一正电源电压输入端(120,220) ,320,420)和负电源电压输入(125,225,325,425)。 三个有机晶体管中的一个是具有与输入端(105,205,305,405)耦合的栅极的输入晶体管。 输出端子(110,210,310,410)耦合到至少三个有机晶体管中的至少一个的第一电极。

    Organic semiconductor and method
    6.
    发明授权
    Organic semiconductor and method 失效
    有机半导体和方法

    公开(公告)号:US06603141B2

    公开(公告)日:2003-08-05

    申请号:US10034337

    申请日:2001-12-28

    IPC分类号: H01L2700

    摘要: A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

    摘要翻译: 由具有形成在其上的栅电极(11),源电极(12)和漏电极(13)的柔性或刚性基板(10)形成的半导体器件和至少部分地设置在其上的有机半导体材料(14)构成。 通过适当选择材料,栅电极(11)将形成肖特基结,在有机半导体材料(14)与源电极(12)和漏电极(13)之间形成欧姆接触。 在许多实施例中,可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

    Method and apparatus for providing electrically isolated closely spaced features on a printed circuit board
    8.
    发明授权
    Method and apparatus for providing electrically isolated closely spaced features on a printed circuit board 失效
    用于在印刷电路板上提供电隔离的紧密间隔的特征的方法和装置

    公开(公告)号:US08134233B2

    公开(公告)日:2012-03-13

    申请号:US11830348

    申请日:2007-07-30

    IPC分类号: H01L23/34 H05K7/00

    摘要: A method and apparatus for forming controlled stress fractures in metal produces electrically isolated, closely spaced circuit sub-entities for use on a metallized printed wiring board. A polymeric substrate has a layer of metal adhered to the surface, and the metal layer is formed into entities. Each entity has a fracture initiating feature formed into it, which serves to initiate and/or direct a stress crack that is induced in the metal. The entities are fractured in a controlled manner by subjecting the substrate and the entities to mechanical stress by a rapid thermal excursion, creating a stress fracture in the entity extending from the fracture initiating feature. The stress fracture divides each entity into two or more sub-entities that are electrically isolated from each other by the stress fracture. The resulting structure can be used to form circuitry requiring very fine spaces for high density printed circuit boards. The rapid thermal stress may be induced by a high intensity, strobed xenon arc lamp.

    摘要翻译: 用于在金属中形成受控应力断裂的方法和装置产生用于金属化印刷线路板的电隔离,紧密间隔的电路子实体。 聚合物基材具有粘附到表面的金属层,并且金属层形成为实体。 每个实体具有形成在其中的断裂起始特征,其用于引发和/或引导在金属中诱发的应力裂纹。 通过快速热偏移对衬底和实体进行机械应力,以受控的方式将实体断裂,在从断裂起始特征延伸的实体中产生应力断裂。 应力断裂将每个实体分为两个或多个通过应力断裂彼此电隔离的子实体。 所得到的结构可用于形成对于高密度印刷电路板需要非常精细空间的电路。 快速热应力可能由高强度,选通的氙弧灯引起。

    Printed electronic substrate havine photochromic barrier layer
    9.
    发明授权
    Printed electronic substrate havine photochromic barrier layer 失效
    印刷电子基板上有光致变色屏障层

    公开(公告)号:US07667285B2

    公开(公告)日:2010-02-23

    申请号:US11610771

    申请日:2006-12-14

    IPC分类号: H01L31/00

    摘要: A protective photochromic barrier film for a light-sensitive printed electronic substrate. Light-sensitive semiconductor devices on a dielectric substrate are electrically connected by conductors. A barrier layer containing photochromic dyes covers some or all of the light-sensitive semiconductor devices. Upon exposure to visible, infrared, or ultraviolet light, the photochromic dyes change chemical structure and decrease the amount of visible or non-visible light that can impinge upon the light-sensitive electronic devices. Upon removal of the visible or non-visible light, the photochromic dyes either revert to their original structure or maintain their altered state.

    摘要翻译: 用于感光印刷电子基板的保护性光致变色阻挡膜。 电介质基片上的感光半导体器件通过导体电连接。 含有光致变色染料的阻挡层覆盖部分或全部感光半导体器件。 当光可见光,红外光或紫外光照射时,光致变色染料会改变化学结构并减少可能会碰到光敏电子设备的可见光或不可见光的量。 在去除可见光或不可见光时,光致变色染料可以回复到其原始结构或维持其改变的状态。

    Semiconductor Device Having Silane Treated Interface
    10.
    发明申请
    Semiconductor Device Having Silane Treated Interface 审中-公开
    具有硅烷处理界面的半导体器件

    公开(公告)号:US20100032654A1

    公开(公告)日:2010-02-11

    申请号:US12189373

    申请日:2008-08-11

    IPC分类号: H01L51/10

    摘要: A semiconductor device made on a polymer substrate using graphic arts printing technology uses a printable organic semiconductor. An electrode is situated on the substrate, and a dielectric layer is situated over the electrode. Another electrode(s) is situated on the dielectric layer. The exposed surfaces of the dielectric and the top electrode are treated with a reactive silane to alter the surface of the electrode and the dielectric sufficiently to allow an overlying organic semiconductor layer to have good adhesion to both the electrode and the dielectric. In various embodiments, the electrodes may be printed, and the dielectric layer may also be printed.

    摘要翻译: 使用图形印刷技术在聚合物基板上制造的半导体器件使用可印刷的有机半导体。 电极位于衬底上,电介质层位于电极上方。 另一个电极位于电介质层上。 电介质和顶部电极的暴露表面用反应性硅烷处理以充分改变电极和电介质的表面,以允许上覆的有机半导体层对电极和电介质具有良好的粘合性。 在各种实施例中,可以印刷电极,并且还可以印刷电介质层。