公开(公告)号：US20120138898A1

公开(公告)日：2012-06-07

申请号：US13310522

申请日：2011-12-02

申请人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

发明人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

IPC分类号： H01L31/0352

CPC分类号： H01L27/1446 ,  G01J5/024 ,  H01L31/0392 ,  H01L31/0543 ,  H01L31/1035 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。

公开(公告)号：US20120267688A1

公开(公告)日：2012-10-25

申请号：US13495746

申请日：2012-06-13

申请人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

发明人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

IPC分类号： H01L29/267 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02546

摘要： To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.

摘要翻译： 为了提高表面的平坦度，提高在单晶硅晶片上外延生长不同种类的半导体晶体层时的半导体器件的可靠性，提供了一种半导体晶片，其包括：在其表面具有硅晶体的基底晶片， 所述硅晶体具有第一凹陷和第二凹陷; 第一组IVB半导体晶体位于第一凹陷中并暴露; 位于第二凹陷中的第二组IVB半导体晶体; 以及位于第二凹陷中的第二IVB族半导体晶体上方并暴露的III-V族化合物半导体晶体。

公开(公告)号：US20120319170A1

公开(公告)日：2012-12-20

申请号：US13594442

申请日：2012-08-24

申请人： Masahiko HATA ,  Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Kazuhiko HONJO

发明人： Masahiko HATA ,  Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Kazuhiko HONJO

IPC分类号： H01L29/737 ,  H01L21/20

CPC分类号： H01L27/0605 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/13023 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the silicon crystal; an electronic element including a portion of the Group 3-5 compound semiconductor crystal as active layer; an insulating film formed directly or indirectly on the base wafer and covering the electronic element; an electrode formed directly or indirectly on the insulating film; a first coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the electrode; a passive element formed directly or indirectly on the insulating film; a second coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the passive element.

摘要翻译： 提供电子器件，其包括：其表面由硅晶体制成的基底晶片; 在硅晶体的部分区域上直接或间接形成的3-5族化合物半导体晶体; 包含部分3-5族化合物半导体晶体作为活性层的电子元件; 直接或间接地形成在基底晶片上并覆盖电子元件的绝缘膜; 在绝缘膜上直接或间接形成的电极; 延伸穿过所述绝缘膜的第一耦合布线，其至少一部分直接或间接地形成在所述绝缘膜上，并且将所述电子元件与所述电极电耦合; 绝缘膜上直接或间接形成的无源元件; 延伸穿过绝缘膜的第二耦合布线，其至少一部分直接或间接地形成在绝缘膜上，并将电子元件与无源元件电连接。

公开(公告)号：US20120068207A1

公开(公告)日：2012-03-22

申请号：US13310451

申请日：2011-12-02

申请人： Masahiko HATA ,  Sadanori Yamanaka ,  Tomoyuki Takada

发明人： Masahiko HATA ,  Sadanori Yamanaka ,  Tomoyuki Takada

IPC分类号： H01L33/26 ,  H01L31/18 ,  H01L21/20 ,  H01L31/0264

CPC分类号： H01L27/1446 ,  H01L21/02439 ,  H01L21/02441 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02524 ,  H01L27/14601 ,  H01L27/15 ,  H01L27/156 ,  H01L29/161 ,  H01L29/267 ,  H01L29/7371 ,  H01S5/021

摘要： Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least one of the Group 3-5 compound semiconductors has a photoelectric semiconductor formed therein, the photoelectric semiconductor including a light emitting semiconductor that emits light in response to a driving current supplied thereto or a light receiving semiconductor that generates a photocurrent in response to light applied thereto, and at least one of the plurality of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor has a heterojunction transistor formed therein.

摘要翻译： 提供了一种光学器件，其包括含有硅的基底晶片，设置在基底晶片上的多个晶种，以及多个晶格匹配或伪晶格匹配多个晶种的3-5族化合物半导体。 第3-5组化合物半导体中的至少一个具有形成在其中的光电半导体，该光电半导体包括响应于提供的驱动电流而发光的发光半导体或响应于光产生光电流的光接收半导体 并且除了具有光电半导体的组3-5化合物半导体之外的多个3-5族化合物半导体中的至少一个具有形成在其中的异质结晶体管。

公开(公告)号：US20120086044A1

公开(公告)日：2012-04-12

申请号：US13327313

申请日：2011-12-15

申请人： Masahiko HATA ,  Hiroyuki SAZAWA ,  Sadanori YAMANAKA

发明人： Masahiko HATA ,  Hiroyuki SAZAWA ,  Sadanori YAMANAKA

IPC分类号： H01L33/30

CPC分类号： H01L27/15 ,  B41J2/45 ,  H01L27/156

摘要： There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light emitting element that emits light in response to current supplied thereto is formed in at least one of the plurality of the Group 3-5 compound semiconductors, and a current limiting element that limits the current supplied to the light emitting element is formed in at least one of the plurality of the Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor in which the light emitting element is formed.

摘要翻译： 提供了一种发光器件，其包括含有硅的基底晶片，与基底晶片接触地设置的多个晶种，以及多个第3-5组化合物半导体，其各自是晶格匹配的或伪晶格的， 与相应的种子体相匹配。 在该装置中，响应于供给的电流而发光的发光元件形成在多个第3-5组化合物半导体中的至少一个中，限流元件限制供给到发光元件的电流 形成在其中形成有发光元件的组3-5化合物半导体之外的多个3-5族化合物半导体中的至少一种。

公开(公告)号：US20120061730A1

公开(公告)日：2012-03-15

申请号：US13301272

申请日：2011-11-21

申请人： Sadanori YAMANAKA ,  Masahiko HATA ,  Noboru FUKUHARA

发明人： Sadanori YAMANAKA ,  Masahiko HATA ,  Noboru FUKUHARA

IPC分类号： H01L29/70 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L29/7371 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66318 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： There is provided a semiconductor wafer including a base wafer that has an impurity region in which an impurity atom has been introduced into silicon, a plurality of seed bodies provided in contact with the impurity region, and a plurality of compound semiconductors each provided in contact with the corresponding seed bodies and lattice-matched or pseudo-lattice-matched to the corresponding seed bodies. The semiconductor wafer can further include an inhibitor provided on the base wafer and in which a plurality of apertures exposing at least a part of the impurity region are provided.

摘要翻译： 提供了一种半导体晶片，其包括：基底晶片，其具有将杂质原子引入到硅中的杂质区域，与杂质区域接触的多个晶种;以及多个化合物半导体，各自与 相应的种子体和与对应的种子晶格匹配或伪晶格匹配。 半导体晶片还可以包括设置在基底晶片上的抑制剂，其中设置暴露至少一部分杂质区域的多个孔。

公开(公告)号：US20120273839A1

公开(公告)日：2012-11-01

申请号：US13531192

申请日：2012-06-22

申请人： Masahiko HATA ,  Hisashi YAMADA ,  Tomoyuki TAKADA

发明人： Masahiko HATA ,  Hisashi YAMADA ,  Tomoyuki TAKADA

IPC分类号： H01L29/267 ,  H01L31/0336 ,  H01L21/20

CPC分类号： H01L31/1852 ,  H01L31/03046 ,  Y02E10/544 ,  Y02P70/521

摘要： A semiconductor wafer includes a base wafer, a sacrificial layer that is lattice-matched or pseudo lattice-matched to the base wafer, a first crystal layer that is formed on the sacrificial layer and made of an epitaxial crystal of SixGe1-x, (0≦x

摘要翻译： 半导体晶片包括基底晶片，与基底晶片进行晶格匹配或伪晶格匹配的牺牲层，形成在牺牲层上并由SixGe1-x的外延晶体制成的第一晶体层（0＆nlE ; x <1）;以及第二晶体层，其形成在第一晶体层上并且由具有比第一晶体层更大的带隙的组3-5化合物半导体的外延晶体制成。 基底晶片例如由单晶GaAs制成。 牺牲层例如由InmAlnGa1-m-nAs（0＆nlE; m <1,0

公开(公告)号：US20120205747A1

公开(公告)日：2012-08-16

申请号：US13410872

申请日：2012-03-02

申请人： Hisashi YAMADA ,  Masahiko HATA ,  Masafumi YOKOYAMA ,  Mitsuru TAKENAKA ,  Shinichi TAKAGI ,  Tetsuji YASUDA ,  Hideki TAKAGI ,  Yuji URABE

发明人： Hisashi YAMADA ,  Masahiko HATA ,  Masafumi YOKOYAMA ,  Mitsuru TAKENAKA ,  Shinichi TAKAGI ,  Tetsuji YASUDA ,  Hideki TAKAGI ,  Yuji URABE

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L21/20 ,  H01L29/02

CPC分类号： H01L29/78681 ,  H01L21/76251 ,  H01L21/76256 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66742

摘要： A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

摘要翻译： 半导体衬底包括衬底，绝缘层和半导体层。 绝缘层在衬底上并与衬底接触。 绝缘层包括无定形金属氧化物和无定形金属氮化物中的至少一种。 半导体层在绝缘层上方并与之接触。 半导体层通过晶体生长形成。

公开(公告)号：US20120074463A1

公开(公告)日：2012-03-29

申请号：US13310614

申请日：2011-12-02

申请人： Masahiko HATA ,  Taro ITATANI

发明人： Masahiko HATA ,  Taro ITATANI

IPC分类号： H01L31/0264 ,  H01L21/20 ,  H01L31/18 ,  H01L29/12

CPC分类号： H01L31/0522 ,  H01L27/142 ,  H01L31/028 ,  H01L31/03046 ,  H01L31/0392 ,  H01L31/0475 ,  H01L31/0543 ,  H01L31/0687 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in contact with a surface of the base wafer exposed inside the aperture, where the light-absorptive structure includes a first semiconductor and a second semiconductor.

摘要翻译： 提供一种半导体晶片，其包括：含有硅的基底晶片; 已经形成在基底晶片上的抑制剂具有露出基底晶片的表面的孔，并抑制晶体生长; 以及已经形成在所述孔内的与所述孔内露出的所述基底晶片的表面接触的光吸收结构，其中所述光吸收结构包括第一半导体和第二半导体。

公开(公告)号：US20120280275A1

公开(公告)日：2012-11-08

申请号：US13548837

申请日：2012-07-13

申请人： Masahiko HATA ,  Hiroyuki SAZAWA

发明人： Masahiko HATA ,  Hiroyuki SAZAWA

IPC分类号： H01L29/267 ,  H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/0254 ,  H01L21/02639

摘要： Provided is a semiconductor wafer including: a base wafer whose surface is made of a silicon crystal: a SixGe1-xC (0≦x

摘要翻译： 本发明提供一种半导体晶片，其包括：表面由硅晶体制成的基底晶片：形成在硅晶体的局部区域中的SixGe1-xC（0＆nlE; x <1）外延晶体; 以及形成在SixGe1-xC（0＆nlE; x <1）外延晶体上的第3族氮化物半导体晶体。 在一个示例中，半导体晶片包括形成在硅晶体上的抑制剂，包含露出硅晶体的孔，并抑制晶体生长，并且在孔径中形成SixGe1-xC（0＆lt; n1E; x <1）外延晶体 。