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41 条记录 (耗时 0.023 秒)

    Semiconductor optical switch and array of the same
    4.
    发明授权
    Semiconductor optical switch and array of the same 失效
    半导体光开关和阵列相同

    公开(公告)号：US5394491A

    公开(公告)日：1995-02-28

    申请号：US232403

    申请日：1994-04-25

    申请人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

    发明人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

    IPC分类号： G02F1/313 ,  H01S5/50 ,  H04Q11/00 ,  G02B6/26

    CPC分类号： G02F1/3138 ,  H01S5/50 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0041 ,  H04Q2011/0052

    摘要： A semiconductor optical switch and an optical switch array for use in an optical logic circuit, photonic switching, OEIC, etc., wherein a light amplifying means is provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, according to the arrangement of the present invention that a light amplifying means is provided in addition to the deflecting portion, no noise component is amplified and therefore the SN ratio is markedly increased.

    摘要翻译： 一种用于光逻辑电路，光子切换，OEIC等的半导体光开关和光开关阵列，其中在连接多个光波导的旁路波导上设置有光放大装置，从而能够改善光 串扰和光传播损耗。 特别地，根据本发明的配置，除了偏转部分之外还提供了光放大装置，没有放大噪声分量，因此SN比显着增加。

    Semiconductor laser having a multiple quantum well structure doped with impurities
    6.
    发明授权
    Semiconductor laser having a multiple quantum well structure doped with impurities 失效
    具有掺杂有杂质的多量子阱结构的半导体激光器

    公开(公告)号：US4881235A

    公开(公告)日：1989-11-14

    申请号：US41410

    申请日：1987-04-23

    申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/227 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/309 ,  H01S5/3407 ,  Y10S372/704

    摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

    摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。 理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

    Semiconductor electro-absorption optical modulator, semiconductor electro-absorption optical modulator integrated laser, optical transmitter module and optical module
    9.
    发明授权
    Semiconductor electro-absorption optical modulator, semiconductor electro-absorption optical modulator integrated laser, optical transmitter module and optical module 有权
    半导体电吸收光调制器，半导体电吸收光调制器集成激光器，光发射模块和光模块

    公开(公告)号：US07409113B2

    公开(公告)日：2008-08-05

    申请号：US11019370

    申请日：2004-12-23

    申请人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

    发明人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

    IPC分类号： G02F1/035 ,  G02F1/295 ,  G02B6/12

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2203/21

    摘要： This invention provides an optical transmitter module and an optical module using an EA modulator capable of realizing stable ACER regardless of operating temperature without using a control mechanism for maintaining temperature of the EA modulator constant. In the EA modulator, optical waveguides formed of a multi-layered film are formed on a substrate, an electrical signal is applied to the optical waveguides in a direction vertical to the substrate, and the input light absorption amount is changed to control the amount of output light. Also, a plurality of p-side electrodes electrically separated from each other for applying an electrical signal to the active layer optical waveguides are arranged on optical axes of active layer optical waveguides. The length of optical waveguides to which the electrical signal is applied is changed by controlling the number of p-side electrodes to which the electrical signal is applied in accordance with temperature.

    摘要翻译： 本发明提供了一种使用EA调制器的光发射机模块和光模块，其能够在不使用用于保持EA调制器的温度恒定的控制机制的情况下，无论操作温度如何，都能实现稳定的ACER。 在EA调制器中，在基板上形成由多层膜形成的光波导，在垂直于基板的方向上向光波导施加电信号，并且改变输入光吸收量， 输出光。 此外，在有源层光波导的光轴上配置有多个彼此电隔离用于向有源层光波导施加电信号的p侧电极。 通过根据温度控制施加电信号的p侧电极的数量来改变施加电信号的光波导的长度。

    Semiconductor electro-absorption optical modulator integrated light emission element light emission element module and optical transmission system
    10.
    发明授权
    Semiconductor electro-absorption optical modulator integrated light emission element light emission element module and optical transmission system 失效
    半导体电吸收光调制器集成发光元件发光元件模块和光传输系统

    公开(公告)号：US06678479B1

    公开(公告)日：2004-01-13

    申请号：US09516912

    申请日：2000-03-01

    申请人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

    发明人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

    IPC分类号： H04B1006

    CPC分类号： H01S5/0265 ,  H01S5/2077 ,  H01S5/2272 ,  H04B10/5051

    摘要： For achieving a transmission light source having different transmission properties or characteristics, i.e., the a parameters, depending upon application thereof, in a light emission element of semiconductor EA modulator integrated type being constructed with a light emission portion for lasing with a single vertical mode and a plurality of EA modulators, wherein an absorption edge wavelength under the condition of applying no bias thereto, in the semiconductor multiple-quantum-well structure owned by the modulator which is near to an emission side of the light emission portion, is to be equal or longer than the absorption edge wavelength owned by the modulator positioned far from the emission side of the light emission portion.

    摘要翻译： 为了实现具有不同透射特性或特性的传输光源，即根据其应用的参数，在半导体EA调制器集成型的发光元件中构造有用于以单个垂直模式激光的发光部分，以及 在靠近发光部的发射侧的调制器所拥有的半导体多量子阱结构中，在不施加偏压的条件下的吸收边缘波长的多个EA调制器将相等 或比由位于远离发光部分的发射侧的调制器所拥有的吸收边缘波长更长。