Production methods of a patterned thin film, semiconductor element, and circuit substrate using fluid resist material
    10.
    发明授权
    Production methods of a patterned thin film, semiconductor element, and circuit substrate using fluid resist material 有权
    使用流体抗蚀剂材料的图案化薄膜,半导体元件和电路基板的制造方法

    公开(公告)号:US08283218B2

    公开(公告)日:2012-10-09

    申请号:US12917078

    申请日:2010-11-01

    IPC分类号: H01L21/77 H01L21/8234

    摘要: A production method of a semiconductor element having a channel includes forming a resist pattern film on a thin film formed on a substrate, and pattering the thin film by etching. The production method also includes forming a second resist pattern film by applying a fluid resist material inside a channel groove after channel etching or inside a resist groove formed above a channel region before channel etching. The production method may also include forming a gate electrode, a gate insulating film, a semiconductor film, and a conductive film on an insulating substrate. The method may include applying the fluid resist material inside the channel groove, thereby forming the second resist pattern film, and patterning the semiconductor film using at least the second resist pattern film.

    摘要翻译: 具有通道的半导体元件的制造方法包括在形成于基板上的薄膜上形成抗蚀剂图案膜,并通过蚀刻对薄膜进行图案化。 该制造方法还包括通过在沟道蚀刻之后在沟道槽内部施加流动抗蚀剂材料或在通道蚀刻之前形成在通道区域上方的抗蚀剂槽内部形成第二抗蚀剂图案膜。 制造方法还可以包括在绝缘基板上形成栅电极,栅绝缘膜,半导体膜和导电膜。 该方法可以包括将流体抗蚀剂材料施加在沟道槽内,从而形成第二抗蚀剂图案膜,并使用至少第二抗蚀剂图案膜来图案化半导体膜。