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    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20120234387A1

    公开(公告)日：2012-09-20

    申请号：US13364839

    申请日：2012-02-02

    申请人： Masato SAWADA ,  Junji Sano ,  Tomomichi Naka ,  Naoaki Sakurai

    发明人： Masato SAWADA ,  Junji Sano ,  Tomomichi Naka ,  Naoaki Sakurai

    IPC分类号： H01L31/0203 ,  H01L31/18

    CPC分类号： H01G9/2077 ,  H01G9/2031 ,  H01G9/2059 ,  Y02E10/542 ,  Y02P70/521

    摘要： According to one embodiment, a solar cell includes a first substrate, a second substrate, a first electrode, a second electrode, a support unit, a sealing unit, a permeation suppression unit, and an electrolyte fluid. The first electrode is provided on a major surface of the first substrate. The second electrode is provided on a major surface of the second substrate. The support unit is provided on the second electrode. The support unit is configured to support a sensitizing dye. The sealing unit is configured to seal a circumferential edge portion of the first substrate and a circumferential edge portion of the second substrate. The permeation suppression unit is provided around the support unit on an inner side of the sealing unit. The electrolyte fluid is provided on an inner side of the permeation suppression unit.

    摘要翻译： 根据一个实施例，太阳能电池包括第一基板，第二基板，第一电极，第二电极，支撑单元，密封单元，渗透抑制单元和电解液。 第一电极设置在第一基板的主表面上。 第二电极设置在第二基板的主表面上。 支撑单元设置在第二电极上。 支撑单元构造成支撑敏化染料。 密封单元构造成密封第一基板的周向边缘部分和第二基板的周边边缘部分。 渗透抑制单元设置在密封单元内侧的支撑单元周围。 电解质流体设置在渗透抑制单元的内侧。

    Substrate processing system and substrate processing program
    3.
    发明授权
    Substrate processing system and substrate processing program 有权
    基板加工系统和基板加工程序

    公开(公告)号：US09303976B2

    公开(公告)日：2016-04-05

    申请号：US13456458

    申请日：2012-04-26

    申请人： Masahiro Uekita ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Naoaki Sakurai ,  Eijiro Koike

    发明人： Masahiro Uekita ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Naoaki Sakurai ,  Eijiro Koike

    IPC分类号： G06F19/00 ,  G06F15/00 ,  G01B11/06 ,  G01N21/64 ,  G01N21/66

    CPC分类号： G01B11/06 ,  G01N21/64 ,  G01N21/66 ,  G01N2021/6421 ,  H01L2933/0041

    摘要： According to one embodiment, a substrate processing system includes a measuring unit, a data processing unit, and a processing unit. The measuring unit is configured to measure information relating to a thickness dimension of a substrate. The substrate includes a light emitting unit and a wavelength conversion unit. The wavelength conversion unit includes a phosphor. The data processing unit is configured to determine processing information relating to a thickness direction of the wavelength conversion unit based on the measured information relating to the thickness dimension of the substrate and based on information relating to a characteristic of light emitted from the light emitting unit. The processing unit is configured to perform processing of the wavelength conversion unit based on the determined processing information.

    摘要翻译： 根据一个实施例，基板处理系统包括测量单元，数据处理单元和处理单元。 测量单元被配置为测量与衬底的厚度尺寸有关的信息。 基板包括发光单元和波长转换单元。 波长转换单元包括荧光体。 数据处理单元被配置为基于与基板的厚度尺寸相关的测量信息，并且基于与从发光单元发射的光的特性相关的信息来确定与波长转换单元的厚度方向有关的处理信息。 处理单元被配置为基于所确定的处理信息来执行波长转换单元的处理。

    SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING PROGRAM
    5.
    发明申请
    SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING PROGRAM 有权
    基板处理系统和基板处理程序

    公开(公告)号：US20120277896A1

    公开(公告)日：2012-11-01

    申请号：US13456458

    申请日：2012-04-26

    申请人： Masahiro Uekita ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Naoaki Sakurai ,  Eijiro Koike

    发明人： Masahiro Uekita ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Naoaki Sakurai ,  Eijiro Koike

    IPC分类号： G06F19/00 ,  G06F15/00 ,  G01B11/06

    CPC分类号： G01B11/06 ,  G01N21/64 ,  G01N21/66 ,  G01N2021/6421 ,  H01L2933/0041

    摘要： According to one embodiment, a substrate processing system includes a measuring unit, a data processing unit, and a processing unit. The measuring unit is configured to measure information relating to a thickness dimension of a substrate. The substrate includes a light emitting unit and a wavelength conversion unit. The wavelength conversion unit includes a phosphor. The data processing unit is configured to determine processing information relating to a thickness direction of the wavelength conversion unit based on the measured information relating to the thickness dimension of the substrate and based on information relating to a characteristic of light emitted from the light emitting unit. The processing unit is configured to perform processing of the wavelength conversion unit based on the determined processing information.

    摘要翻译： 根据一个实施例，基板处理系统包括测量单元，数据处理单元和处理单元。 测量单元被配置为测量与衬底的厚度尺寸有关的信息。 基板包括发光单元和波长转换单元。 波长转换单元包括荧光体。 数据处理单元被配置为基于与基板的厚度尺寸相关的测量信息，并且基于与从发光单元发射的光的特性相关的信息来确定与波长转换单元的厚度方向有关的处理信息。 处理单元被配置为基于所确定的处理信息来执行波长转换单元的处理。

    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    6.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    光学半导体器件及其制造方法

    公开(公告)号：US20110297987A1

    公开(公告)日：2011-12-08

    申请号：US13154999

    申请日：2011-06-07

    申请人： Hiroshi KOIZUMI ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa

    发明人： Hiroshi KOIZUMI ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa

    IPC分类号： H01L33/50

    CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0058

    摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

    摘要翻译： 根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。 发光层包括第一和第二主表面，第一和第二电极。 第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

    SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE WAFER AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光装置的制造方法及制造半导体发光装置的方法

    公开(公告)号：US20120235177A1

    公开(公告)日：2012-09-20

    申请号：US13402430

    申请日：2012-02-22

    申请人： Tomomichi Naka

    发明人： Tomomichi Naka

    IPC分类号： H01L33/50 ,  H01L27/15

    CPC分类号： H01L33/508 ,  H01L27/156 ,  H01L2224/11 ,  H01L2933/0041

    摘要： According to one embodiment, a semiconductor light emitting device wafer includes a plurality of semiconductor light emitting devices, the plurality of semiconductor light emitting devices being collectively formed, and includes a light emitting unit and a wavelength conversion unit. The light emitting unit has a first major surface and a second major surface on a side opposite to the first major surface. The wavelength conversion unit is provided on the first major surface side. The wavelength conversion unit contains a fluorescer. A thickness of the wavelength conversion unit changes based on a distribution in a surface of the wafer of at least one selected from a wavelength and an intensity of light emitted from the light emitting unit of the plurality of semiconductor light emitting devices.

    摘要翻译： 根据一个实施例，半导体发光器件晶片包括多个半导体发光器件，多个半导体发光器件共同形成，并且包括发光单元和波长转换单元。 发光单元具有与第一主表面相对的一侧的第一主表面和第二主表面。 波长转换单元设置在第一主表面侧。 波长转换单元含有荧光剂。 波长转换单元的厚度基于从多个半导体发光器件的发光单元的波长和光强度中选出的至少一个晶片表面的分布而变化。

    Semiconductor light emitting device
    10.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08368089B2

    公开(公告)日：2013-02-05

    申请号：US12885777

    申请日：2010-09-20

    申请人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    发明人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

    IPC分类号： H01L29/18 ,  H01L33/00

    CPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。