公开(公告)号：US06310282B1

公开(公告)日：2001-10-30

申请号：US09527521

申请日：2000-03-16

申请人： Masatoshi Sakurai ,  Katsuyuki Naito ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Maki Yonetsu

发明人： Masatoshi Sakurai ,  Katsuyuki Naito ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Maki Yonetsu

IPC分类号： H01L31103

CPC分类号： H01M14/005 ,  G02F1/1523 ,  G02F2001/13324 ,  H01G9/2004 ,  H01G9/2031 ,  H01G9/2063 ,  H01G9/2068 ,  H01G9/2072 ,  H01L27/3227 ,  H01L51/0059 ,  H01L51/0064 ,  H01L51/0081 ,  H01L51/0086 ,  H01L51/4226 ,  H01L51/5096 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P70/521

摘要： A photovoltaic conversion element comprising, a first transparent electrode, a transparent semiconductor layer disposed on the first transparent electrode, a sensitizing dye adsorption portion which is disposed on the surface of the transparent semiconductor layer, a carrier transport layer formed on the sensitizing dye adsorption portion, and a second transparent electrode disposed on the carrier transport layer, wherein the sensitizing dye adsorption portion comprises sensitizing dyes of plural kinds of color, which are adsorbed on a plurality of surface regions of the semiconductor layer.

摘要翻译： 一种光电转换元件，包括第一透明电极，设置在第一透明电极上的透明半导体层，设置在透明半导体层的表面上的增感染料吸附部分，形成在敏化染料吸附部分上的载体输送层 以及设置在所述载体输送层上的第二透明电极，其中所述增感染料吸附部分包含吸附在所述半导体层的多个表面区域上的多种颜色的增感染料。

公开(公告)号：US06384321B1

公开(公告)日：2002-05-07

申请号：US09667562

申请日：2000-09-22

申请人： Satoshi Mikoshiba ,  Hiroyasu Sumino ,  Maki Yonetsu ,  Shuji Hayase

发明人： Satoshi Mikoshiba ,  Hiroyasu Sumino ,  Maki Yonetsu ,  Shuji Hayase

IPC分类号： H01L3104

CPC分类号： H01M6/168 ,  H01G9/2004 ,  H01G9/2009 ,  H01G9/2031 ,  H01G9/2059 ,  H01G9/2077 ,  H01M6/162 ,  H01M6/166 ,  Y02E10/542 ,  Y02P70/521

摘要： The present invention provides an electrolyte composition, comprising an electrolyte containing at least one kind of an imidazolium salt selected from the group consisting of 1-methyl-3-propyl imidazolium iodide, 1-methyl-3-isopropyl imidazolium iodide, 1-methyl-3-butyl imidazolium iodide, 1-methyl-3-isobutyl imidazolium iodide and 1-methyl-3-sec-butyl imidazolium iodide, a halogen-containing compound dissolved in the electrolyte, and a compound dissolved in the electrolyte and containing at least one element selected from the group consisting of N, P and S, the compound being capable of forming an onium salt together with the halogen-containing compound.

摘要翻译： 本发明提供一种电解质组合物，其包含含有选自1-甲基-3-丙基碘化咪唑，碘化1-甲基-3-异丙基咪唑鎓，1-甲基-3-异丙基咪唑鎓碘化物， 碘化3-丁基咪唑鎓，碘化1-甲基-3-异丁基咪唑鎓，碘化1-甲基-3-仲丁基咪唑鎓，溶解在电解质中的含卤素化合物，溶解在电解质中的化合物，含有至少一种 选自N，P和S的元素，所述化合物能够与含卤素的化合物一起形成鎓盐。

公开(公告)号：US07147950B2

公开(公告)日：2006-12-12

申请号：US10315101

申请日：2002-12-10

申请人： Maki Yonetsu ,  Masahiro Takashita ,  Hiroyasu Sumino

发明人： Maki Yonetsu ,  Masahiro Takashita ,  Hiroyasu Sumino

IPC分类号： H01M8/04 ,  H01M2/00 ,  H01M10/44

CPC分类号： H01M8/04186 ,  H01M8/1009 ,  H01M8/222

摘要： Disclosed is a fuel cell comprising a fuel cell body (stacked body) including a unit cell having an electromotive section in which an electrolyte membrane is sandwiched between a fuel electrode and an oxidant electrode, and a liquid fuel tank for storing a liquid fuel that is to be supplied to the fuel cell body and connected to the fuel cell body. The liquid fuel is introduced by the capillary action into the unit cell included in the fuel cell body and vaporized within the unit cell so as to be supplied to the fuel electrode, thereby generating an electric power. The liquid fuel tank is provided with a pressure adjusting mechanism for introducing a required amount of the liquid fuel from a liquid outlet port into the unit cell.

公开(公告)号：US06506513B1

公开(公告)日：2003-01-14

申请号：US09653458

申请日：2000-08-31

申请人： Maki Yonetsu ,  Masahiro Takashita ,  Hiroyasu Sumino

发明人： Maki Yonetsu ,  Masahiro Takashita ,  Hiroyasu Sumino

IPC分类号： H01M238

CPC分类号： H01M8/04186 ,  H01M8/1009 ,  H01M8/222

摘要： Disclosed is a fuel cell comprising a fuel cell body (stacked body) including a unit cell having an electromotive section in which an electrolyte membrane is sandwiched between a fuel electrode and an oxidant electrode, and a liquid fuel tank for storing a liquid fuel that is to be supplied to the fuel cell body and connected to the fuel cell body. The liquid fuel is introduced by the capillary action into the unit cell included in the fuel cell body and vaporized within the unit cell so as to be supplied to the fuel electrode, thereby generating an electric power. The liquid fuel tank is provided with a pressure adjusting mechanism for introducing a required amount of the liquid fuel from a liquid outlet port into the unit cell.

摘要翻译： 公开了一种燃料电池，其包括燃料电池体（层叠体），该燃料电池体包括：单电池，具有电解质部分，电解质膜夹在燃料电极和氧化剂电极之间;液体燃料箱，用于储存液体燃料， 供给到燃料电池体并与燃料电池体连接。 液体燃料通过毛细管作用被引入到燃料电池体内的单体电池中，并在单电池内汽化，从而供给燃料电极，从而产生电力。 液体燃料箱设置有用于将液体燃料从液体出口导入所需单元的压力调节机构。

公开(公告)号：US6013356A

公开(公告)日：2000-01-11

申请号：US721319

申请日：1996-09-26

申请人： Akihiro Horiguchi ,  Hiroyasu Sumino ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Akihiro Horiguchi ,  Hiroyasu Sumino ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： H01L23/498 ,  B32B3/00

CPC分类号： H01L23/49883 ,  H01L23/49894 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15174 ,  H01L2924/15312 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/256 ,  Y10T428/258 ,  Y10T428/259 ,  Y10T428/31678

摘要： A circuit board having at least one insulator layer and at least one conductor layer which includes at least one of the whole insulator layers in a sintered body containing .beta.-Si.sub.3 N.sub.4 as a main component and at least one element selected from the group consisting of a rare earth element and an alkaline earth element, and at least one of the whole conductor layers contains at least one element selected from the group of IVb, Vb and VIb group of the periodic table, and at least one element selected from the group of a rare earth element and an alkaline earth element, and a Si element.

摘要翻译： 一种具有至少一个绝缘体层和至少一个导体层的电路板，所述至少一个导体层包含以包含β-Si 3 N 4为主要成分的烧结体中的至少一个整个绝缘体层，以及至少一种选自稀有金属 地球元素和碱土元素，并且整个导体层中的至少一个包含选自周期表的IVb，Vb和VIb族组中的至少一种元素，以及选自稀有元素组中的至少一种元素 土元素和碱土元素，以及Si元素。

公开(公告)号：US5616956A

公开(公告)日：1997-04-01

申请号：US524906

申请日：1995-09-07

申请人： Akihiro Horiguchi ,  Jun Monma ,  Kazuo Kimura ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Mitsuo Kasori ,  Hiroyasu Sumino

发明人： Akihiro Horiguchi ,  Jun Monma ,  Kazuo Kimura ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Mitsuo Kasori ,  Hiroyasu Sumino

IPC分类号： H05K1/09 ,  C04B35/581 ,  C04B41/87 ,  C04B41/88 ,  C04B41/89 ,  H01L25/16 ,  H05K1/03 ,  H05K3/46 ,  H01L23/02 ,  C04B35/58 ,  H01L23/48 ,  H01L29/62

CPC分类号： H01L25/16 ,  C04B35/581 ,  H01L2924/0002

摘要： Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.

摘要翻译： 公开了一种电路基板和施加电路基板的半导体器件。 电路基板具有绝缘层和导电层。 绝缘层由包含氮化铝的烧结氮化铝组合物组成; 由包含元素的化合物给出的第一组分，所述元素选自元素周期表的IIa族元素和IIIa族元素; 由简单的硼或硼化合物给出的第二组分; 并且第三组分由简单的锰或锰化合物产生。 导电层包含：由金属或导电化合物给出的导电组分，用于显示导电性; 氮化铝; 第一部分; 第二部分; 和第三个组件。 半导体器件具有上述电路基板，安装在电路基板上的半导体元件和用密封玻璃紧密地结合到电路基板上的盖以覆盖半导体元件。

公开(公告)号：US5641718A

公开(公告)日：1997-06-24

申请号：US521475

申请日：1995-08-30

申请人： Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi ,  Mitsuo Kasori ,  Hiroyasu Sumino ,  Fumio Ueno ,  Jun Monma ,  Kazuo Kimura

发明人： Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi ,  Mitsuo Kasori ,  Hiroyasu Sumino ,  Fumio Ueno ,  Jun Monma ,  Kazuo Kimura

IPC分类号： C04B35/581 ,  C04B41/51 ,  C04B41/88 ,  H01L23/15 ,  H05K1/03 ,  C04B35/58 ,  C04B35/03 ,  B32B7/00

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5133 ,  C04B41/88 ,  H01L23/15 ,  C04B2111/00844 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  Y10T428/24926

摘要： Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

摘要翻译： 公开了一种用于半导体器件的烧结氮化铝组合物和电路基板。 烧结的氮化铝组合物包括：氮化铝; 由含有选自元素周期表的碱土元素和IIIa族元素的元素的化合物给出的第一组分; 由简单硅或含硅化合物制成的第二组分; 以及由简单的锰或含锰化合物制成的第三组分。 电路基板具有由上述烧结氮化铝组合物构成的绝缘层和包含导电材料的导电层和与绝缘层相同的部件。

公开(公告)号：US6107638A

公开(公告)日：2000-08-22

申请号：US42453

申请日：1998-03-16

申请人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： H01L21/20 ,  H01L23/15 ,  H01L23/373 ,  H05K3/38 ,  H01L29/12

CPC分类号： H01L23/15 ,  C04B35/593 ,  C04B37/025 ,  C04B37/026 ,  C04B41/009 ,  C04B41/52 ,  C04B41/90 ,  H01L21/2007 ,  H01L23/3735 ,  H05K3/38 ,  C04B2111/00405 ,  C04B2111/00844 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3409 ,  C04B2235/3865 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/6565 ,  C04B2235/6584 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/068 ,  C04B2237/08 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/36 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/405 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/408 ,  C04B2237/52 ,  C04B2237/54 ,  C04B2237/562 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/74 ,  C04B2237/86 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/3025

摘要： Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.

摘要翻译： 公开了一种氮化硅电路基板及其制造方法及其半导体器件。 电路基板包括：氮化硅衬底; 金属电路板; 以及介于氮化硅板和用于接合氮化硅衬底和金属电路板的金属电路板之间并具有含有氧化铝组分的化合物的中间层。 中间层中的氧化铝组分的浓度在金属电路板的侧面比在氮化硅板侧更高。

公开(公告)号：US6086990A

公开(公告)日：2000-07-11

申请号：US721320

申请日：1996-09-26

申请人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： C04B37/02 ,  C04B35/584 ,  C04B35/593 ,  C04B41/52 ,  C04B41/89 ,  H01L23/14 ,  H01L23/15 ,  H01L23/373 ,  H05K1/03 ,  H05K3/38 ,  B32B15/00

CPC分类号： C04B41/009 ,  C04B35/5935 ,  C04B41/52 ,  C04B41/89 ,  H01L23/15 ,  H01L23/3735 ,  H05K3/38 ,  C04B2111/00844 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3025 ,  H05K1/0306 ,  Y10T428/265

摘要： Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.

摘要翻译： 公开了一种高导热氮化硅电路基板，其包括在25℃下的热导率为60W / m×K以上的氮化硅陶瓷板和通过中间层与氮化硅陶瓷板接合的金属电路板，该中间层含有 氧和选自钛，锆，铪，铌和铝的至少一种元素，以及使用该元素的半导体器件。

公开(公告)号：US6110596A

公开(公告)日：2000-08-29

申请号：US721346

申请日：1996-09-26

申请人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Fumio Ueno

发明人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Fumio Ueno

IPC分类号： H05K1/05 ,  C04B37/02 ,  H01L23/14 ,  H05K3/38 ,  C04B35/58

CPC分类号： C04B35/645 ,  C03C8/24 ,  C04B35/584 ,  C04B35/64 ,  C04B37/025 ,  H05K3/38 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3258 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/447 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/658 ,  C04B2235/72 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/10 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/405 ,  C04B2237/407 ,  C04B2237/592 ,  C04B2237/62 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  Y10T428/24975 ,  Y10T428/265

摘要： Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.

摘要翻译： 公开了一种电路基板，其包括在室温下为80W / mK以上的导热性的氮化硅陶瓷板1和通过玻璃层3与氮化硅陶瓷板1接合的金属板2，以及半导体装置 其中安装有电路基板。