公开(公告)号：US6110596A

公开(公告)日：2000-08-29

申请号：US721346

申请日：1996-09-26

申请人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Fumio Ueno

发明人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Hiroyasu Sumino ,  Fumio Ueno

IPC分类号： H05K1/05 ,  C04B37/02 ,  H01L23/14 ,  H05K3/38 ,  C04B35/58

CPC分类号： C04B35/645 ,  C03C8/24 ,  C04B35/584 ,  C04B35/64 ,  C04B37/025 ,  H05K3/38 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3258 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/447 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/658 ,  C04B2235/72 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/10 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/405 ,  C04B2237/407 ,  C04B2237/592 ,  C04B2237/62 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  Y10T428/24975 ,  Y10T428/265

摘要： Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.

摘要翻译： 公开了一种电路基板，其包括在室温下为80W / mK以上的导热性的氮化硅陶瓷板1和通过玻璃层3与氮化硅陶瓷板1接合的金属板2，以及半导体装置 其中安装有电路基板。

公开(公告)号：US6107638A

公开(公告)日：2000-08-22

申请号：US42453

申请日：1998-03-16

申请人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： H01L21/20 ,  H01L23/15 ,  H01L23/373 ,  H05K3/38 ,  H01L29/12

CPC分类号： H01L23/15 ,  C04B35/593 ,  C04B37/025 ,  C04B37/026 ,  C04B41/009 ,  C04B41/52 ,  C04B41/90 ,  H01L21/2007 ,  H01L23/3735 ,  H05K3/38 ,  C04B2111/00405 ,  C04B2111/00844 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3409 ,  C04B2235/3865 ,  C04B2235/3878 ,  C04B2235/3895 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/6565 ,  C04B2235/6584 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/068 ,  C04B2237/08 ,  C04B2237/121 ,  C04B2237/122 ,  C04B2237/36 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/403 ,  C04B2237/405 ,  C04B2237/406 ,  C04B2237/407 ,  C04B2237/408 ,  C04B2237/52 ,  C04B2237/54 ,  C04B2237/562 ,  C04B2237/58 ,  C04B2237/704 ,  C04B2237/708 ,  C04B2237/72 ,  C04B2237/74 ,  C04B2237/86 ,  H01L2224/05599 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/3025

摘要： Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.

摘要翻译： 公开了一种氮化硅电路基板及其制造方法及其半导体器件。 电路基板包括：氮化硅衬底; 金属电路板; 以及介于氮化硅板和用于接合氮化硅衬底和金属电路板的金属电路板之间并具有含有氧化铝组分的化合物的中间层。 中间层中的氧化铝组分的浓度在金属电路板的侧面比在氮化硅板侧更高。

公开(公告)号：US6086990A

公开(公告)日：2000-07-11

申请号：US721320

申请日：1996-09-26

申请人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Hiroyasu Sumino ,  Akihiro Horiguchi ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： C04B37/02 ,  C04B35/584 ,  C04B35/593 ,  C04B41/52 ,  C04B41/89 ,  H01L23/14 ,  H01L23/15 ,  H01L23/373 ,  H05K1/03 ,  H05K3/38 ,  B32B15/00

CPC分类号： C04B41/009 ,  C04B35/5935 ,  C04B41/52 ,  C04B41/89 ,  H01L23/15 ,  H01L23/3735 ,  H05K3/38 ,  C04B2111/00844 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3025 ,  H05K1/0306 ,  Y10T428/265

摘要： Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.

摘要翻译： 公开了一种高导热氮化硅电路基板，其包括在25℃下的热导率为60W / m×K以上的氮化硅陶瓷板和通过中间层与氮化硅陶瓷板接合的金属电路板，该中间层含有 氧和选自钛，锆，铪，铌和铝的至少一种元素，以及使用该元素的半导体器件。

公开(公告)号：US5641718A

公开(公告)日：1997-06-24

申请号：US521475

申请日：1995-08-30

申请人： Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi ,  Mitsuo Kasori ,  Hiroyasu Sumino ,  Fumio Ueno ,  Jun Monma ,  Kazuo Kimura

发明人： Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi ,  Mitsuo Kasori ,  Hiroyasu Sumino ,  Fumio Ueno ,  Jun Monma ,  Kazuo Kimura

IPC分类号： C04B35/581 ,  C04B41/51 ,  C04B41/88 ,  H01L23/15 ,  H05K1/03 ,  C04B35/58 ,  C04B35/03 ,  B32B7/00

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5133 ,  C04B41/88 ,  H01L23/15 ,  C04B2111/00844 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  Y10T428/24926

摘要： Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.

摘要翻译： 公开了一种用于半导体器件的烧结氮化铝组合物和电路基板。 烧结的氮化铝组合物包括：氮化铝; 由含有选自元素周期表的碱土元素和IIIa族元素的元素的化合物给出的第一组分; 由简单硅或含硅化合物制成的第二组分; 以及由简单的锰或含锰化合物制成的第三组分。 电路基板具有由上述烧结氮化铝组合物构成的绝缘层和包含导电材料的导电层和与绝缘层相同的部件。

公开(公告)号：US6013356A

公开(公告)日：2000-01-11

申请号：US721319

申请日：1996-09-26

申请人： Akihiro Horiguchi ,  Hiroyasu Sumino ,  Mitsuo Kasori ,  Fumio Ueno

发明人： Akihiro Horiguchi ,  Hiroyasu Sumino ,  Mitsuo Kasori ,  Fumio Ueno

IPC分类号： H01L23/498 ,  B32B3/00

CPC分类号： H01L23/49883 ,  H01L23/49894 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/15174 ,  H01L2924/15312 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/256 ,  Y10T428/258 ,  Y10T428/259 ,  Y10T428/31678

摘要： A circuit board having at least one insulator layer and at least one conductor layer which includes at least one of the whole insulator layers in a sintered body containing .beta.-Si.sub.3 N.sub.4 as a main component and at least one element selected from the group consisting of a rare earth element and an alkaline earth element, and at least one of the whole conductor layers contains at least one element selected from the group of IVb, Vb and VIb group of the periodic table, and at least one element selected from the group of a rare earth element and an alkaline earth element, and a Si element.

摘要翻译： 一种具有至少一个绝缘体层和至少一个导体层的电路板，所述至少一个导体层包含以包含β-Si 3 N 4为主要成分的烧结体中的至少一个整个绝缘体层，以及至少一种选自稀有金属 地球元素和碱土元素，并且整个导体层中的至少一个包含选自周期表的IVb，Vb和VIb族组中的至少一种元素，以及选自稀有元素组中的至少一种元素 土元素和碱土元素，以及Si元素。

公开(公告)号：US5616956A

公开(公告)日：1997-04-01

申请号：US524906

申请日：1995-09-07

申请人： Akihiro Horiguchi ,  Jun Monma ,  Kazuo Kimura ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Mitsuo Kasori ,  Hiroyasu Sumino

发明人： Akihiro Horiguchi ,  Jun Monma ,  Kazuo Kimura ,  Katsuyoshi Oh-Ishi ,  Fumio Ueno ,  Mitsuo Kasori ,  Hiroyasu Sumino

IPC分类号： H05K1/09 ,  C04B35/581 ,  C04B41/87 ,  C04B41/88 ,  C04B41/89 ,  H01L25/16 ,  H05K1/03 ,  H05K3/46 ,  H01L23/02 ,  C04B35/58 ,  H01L23/48 ,  H01L29/62

CPC分类号： H01L25/16 ,  C04B35/581 ,  H01L2924/0002

摘要： Disclosed is a circuit substrate and a semiconductor device to which the circuit substrate is applied. The circuit substrate has an insulating layer and an electrically conductive layer. The insulating layer is composed of a sintered aluminum nitride composition containing: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of group IIa elements and group IIIa elements of the periodic table; a second component given by either a simple boron or a boron compound; and a third component give by either a simple manganese or a manganese compound. The electrically conductive layer contains: a conductive component given by a metal or an electrically conductive compound for exhibiting electric conductivity; aluminum nitride; the first component; the second component; and the third component. The semiconductor device has the above circuit substrate, a semiconductor element mounted on the circuit substrate, and a cap being tightly bonded to the circuit substrate with a sealing glass to cover the semiconductor element.

摘要翻译： 公开了一种电路基板和施加电路基板的半导体器件。 电路基板具有绝缘层和导电层。 绝缘层由包含氮化铝的烧结氮化铝组合物组成; 由包含元素的化合物给出的第一组分，所述元素选自元素周期表的IIa族元素和IIIa族元素; 由简单的硼或硼化合物给出的第二组分; 并且第三组分由简单的锰或锰化合物产生。 导电层包含：由金属或导电化合物给出的导电组分，用于显示导电性; 氮化铝; 第一部分; 第二部分; 和第三个组件。 半导体器件具有上述电路基板，安装在电路基板上的半导体元件和用密封玻璃紧密地结合到电路基板上的盖以覆盖半导体元件。

公开(公告)号：US5500395A

公开(公告)日：1996-03-19

申请号：US320758

申请日：1994-10-11

申请人： Fumio Ueno ,  Mitsuo Kasori ,  Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi

发明人： Fumio Ueno ,  Mitsuo Kasori ,  Akihiro Horiguchi ,  Katsuyoshi Oh-Ishi

IPC分类号： C04B35/581 ,  H01B3/12 ,  H01L23/15

CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  Y10S428/901 ,  Y10T428/24917

摘要： Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.

摘要翻译： 公开了一种具有高导热性和高强度的氮化铝烧结体，其可以通过低温，短时间烧结制造。 该氮化铝烧结体的氮化铝粒子的平均粒径为2μm以下，导热率为80W / m·K以上，相对密度为98％以上。

公开(公告)号：US5286927A

公开(公告)日：1994-02-15

申请号：US959618

申请日：1992-10-13

申请人： Fumio Ueno ,  Mitsuo Kasori ,  Yoshiko Goto ,  Akihiro Horiguchi

发明人： Fumio Ueno ,  Mitsuo Kasori ,  Yoshiko Goto ,  Akihiro Horiguchi

IPC分类号： C23C16/18 ,  C23C30/00 ,  H05K1/03 ,  H05K1/09 ,  H05K3/00 ,  H05K3/10 ,  H05K3/12 ,  H05K01/00

CPC分类号： H05K3/1258 ,  H01L24/48 ,  H05K1/092 ,  H05K3/12 ,  H01L2224/1147 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K1/0306 ,  H05K2201/09036 ,  H05K2203/0568 ,  H05K3/0023 ,  H05K3/10 ,  H05K3/107 ,  Y10T29/49155 ,  Y10T29/49158

摘要： Disclosed is a method of manufacturing a circuit board comprising an insulating substrate and a conductor pattern of a low resistivity which can be prevented from being peeled off the substrate by a thermal stress. The method comprises the step of forming an insulating layer on an insulating substrate, the insulating layer being provided with a groove having a depth of at least 20 .mu.m and shaped like a conductor pattern which is to be formed later, the step of filling the groove of the insulating layer with a paste composition consisting of a powdery material capable of forming an electrically conductive metal, a fine particles having a thermal expansion coefficient smaller than that of the electrically conductive metal, the fine particles being used in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal, and an organic binder, and the step of baking the paste composition so as to form a conductor pattern on the insulating substrate, the conductor pattern containing as a main component the electrically conductive metal and the fine particles having a thermal expansion coefficient smaller than that of the metal, the fine particles being dispersed in the electrically conductive metal in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal.

摘要翻译： 公开了一种制造电路板的方法，该电路板包括绝缘基板和具有低电阻率的导体图案，其可以防止被热应力从基板上剥离。 该方法包括在绝缘基板上形成绝缘层的步骤，绝缘层设置有深度至少为20（μm）的凹槽，并形成为稍后形成的导体图案，步骤 用能够形成导电金属的粉末材料组成的糊料组合物，具有比导电金属的热膨胀系数小的热膨胀系数的微粒填充绝缘层的槽，该微粒的用量为 相对于导电性金属的量为0.5〜20体积％的有机粘合剂，以及在该绝缘性基材上形成导体图案的烧成糊剂组合物的步骤，以主要成分为主成分的导体图案 导电性金属和热膨胀系数小于金属的微细粒子，微细散布在电极中 相对于导电金属的量，导电金属的导电量为0.5〜20体积％。

公开(公告)号：US5284537A

公开(公告)日：1994-02-08

申请号：US988666

申请日：1992-12-10

申请人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Yoshiko Goto ,  Fumio Ueno

发明人： Mitsuo Kasori ,  Akihiro Horiguchi ,  Yoshiko Goto ,  Fumio Ueno

IPC分类号： C04B35/581 ,  C04B37/00

CPC分类号： C04B35/581

摘要： In an aluminum nitride structure, a plurality of aluminum nitride regions having different purities are integrally formed to satisfy a predetermined positional relationship, and neighboring regions are brought into direct contact with each other to form an abrupt junction therebetween. Therefore, the aluminum nitride structure has anisotropy in physical properties such as a thermal conductivity, a light transmittance, and a strength.

摘要翻译： 在氮化铝结构中，具有不同纯度的多个氮化铝区域一体地形成以满足预定的位置关系，并且相邻区域彼此直接接触以在它们之间形成突然的接合。 因此，氮化铝结构体在导热性，透光率和强度等物理性质方面具有各向异性。

公开(公告)号：US5184399A

公开(公告)日：1993-02-09

申请号：US723184

申请日：1991-06-28

申请人： Fumio Ueno ,  Mitsuo Kasori ,  Yoshiko Goto ,  Akihiro Horiguchi

发明人： Fumio Ueno ,  Mitsuo Kasori ,  Yoshiko Goto ,  Akihiro Horiguchi

IPC分类号： C23C16/18 ,  C23C30/00 ,  H05K1/03 ,  H05K1/09 ,  H05K3/00 ,  H05K3/10 ,  H05K3/12

CPC分类号： H05K3/1258 ,  H01L24/48 ,  H05K1/092 ,  H05K3/12 ,  H01L2224/1147 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73265 ,  H01L24/45 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/351 ,  H05K1/0306 ,  H05K2201/09036 ,  H05K2203/0568 ,  H05K3/0023 ,  H05K3/10 ,  H05K3/107 ,  Y10T29/49155 ,  Y10T29/49158

摘要： Disclosed is a method of manufacturing a circuit board comprising an insulating substrate and a conductor pattern of a low resistivity which can be prevented from being peeled off the substrate by a thermal stress. The method comprises the step of forming an insulating layer on an insulating substrate, the insulating layer being provided with a groove having a depth of at least 20 .mu.m and shaped like a conductor pattern which is to be formed later, the step of filling the groove of the insulating layer with a paste composition consisting of a powdery material capable of forming an electrically conductive metal, a fine particles having a thermal expansion coefficient smaller than that of the electrically conductive metal, the fine particles being used in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal, and an organic binder, and the step of baking the paste composition so as to form a conductor pattern on the insulating substrate, the conductor pattern containing as a main component the electrically conductive metal and the fine particles having a thermal expansion coefficient smaller than that of the metal, the fine particles being dispersed in the electrically conductive metal in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal.