摘要:
In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions, can be achieved through a reaction preventive or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P
摘要:
The invention comprises a process for joining a first surface and a second surface where the first surface comprises an initially non-solderable surface which comprises coating the first surface with a solder-adhesion layer to produce a solder-adhesion layer on the first surface and providing a Thermal Interface Material (“TIM”) composition comprising solderable heat-conducting particles in a bondable resin matrix where at least some of the solderable heat-conducting particles comprise a solder surface. The TIM composition is placed between the first surface and the second surface to extend between and be contiguous with both the second surface and the solder-adhesion layer on the first surface. Sufficiently heating the TIM composition results in (a) soldering at least some of the solderable heat-conducting particles to one another; and (b) soldering at least some of the solderable heat-conducting particles to the solder-adhesion layer on the first surface. When the second surface comprises a solderable surface, the particles will also bond to it. When the second surface is not solderable, a solder adhesion layer can be placed on it. The process also includes adhesively bonding the resin matrix to the first surface and the second surface. The first surface can comprise an electronic device such as a semiconductor device and the second surface can comprise a heat sink, such as a solderable heat sink. The invention also comprises a process for improving the heat conductivity of a TIM, an article of manufacture made by the process, and a composition of matter comprising the TIM.
摘要:
An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.
摘要:
A ball-limiting metallurgy includes a substrate, a barrier layer formed over the substrate, an adhesion layer formed over the barrier layer, a first solderable layer formed over the adhesion layer, a diffusion barrier layer formed over the adhesion layer, and a second solderable layer formed over the diffusion barrier layer.
摘要:
A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.
摘要:
An electronic interconnection assembly having a thin film bonded to either a glass ceramic or to an organic laminate substrate, and a method for attaching a thin film wiring package to the substrate. Provided is the utilization of adhesives which may be processed at significantly lower temperatures so as to avoid damaging components, the wiring package and interconnection joints. Moreover, pursuant to specific aspects, the joining of the thin film to the substrate may be implemented with the utilization of dendrites.
摘要:
A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.
摘要:
A new interconnection scheme is disclosed for a tape automated bonding (TAB) package, a flip chip package and an active matrix liquid crystal display (AMLCD) panel, where an electrically conducting adhesive is used to form an electrical interconnection between an active electronic device and its components. The electrically conducting adhesive can be a mixture comprising a polymer resin, a no-clean solder flux, a plurality of electrically conducting particles with an electrically conducting fusible coating which provides a metallurgical bond between the conducting particles as well as to the substrates. The advantages of using the electrically conducting adhesives include reduction in bonding pressure and/or bonding temperature, control of interfacial reactions, promotion of stable metallurgical bonds, enhanced reliability of the joints, and others.
摘要:
Pastes of dendrite particles coated with an electrically conductive coating are described. A surface is placed in contact with an electrolytic or electroless plating solution. Dendrites are formed on the surface. The dendrites are exposed to another plating solution to plate a coating on the surface of the dendrites. The coated dendrites are removed from the surface to form a powder of coated dendrites. The powder is added to a polymer material to form a paste. The paste is disposed between electrical contacts on adjacent surfaces. The paste is heated to fuse the dendrite surfaces to form a network of fused dendrites which are also fused to the electrical contacts. The paste is further heated to cure the polymer to form electrical interconnections between the electrical contacts on the adjacent surfaces.
摘要:
In using Ni(P) and Sn-rich solders in Pb free interconnections, the prevention and control of the formation of intermetallic compound inclusions can be achieved through a reaction-preventative or control layer that is positioned on top of an electroless Ni(P) metallization, such as by application of a thin layer of Sn on the Ni(P) or through the application of a thin layer of Cu on the Ni(P).