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1.发明授权Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction 有权半平面III族氮化物光电子器件在M面平面衬底上，在C方向上具有小于+/- 15度的倾斜度公开(公告)号：US09077151B2
公开(公告)日：2015-07-07
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
IPC分类号： H01S5/00 , H01S5/32 , B82Y20/00 , H01L21/02 , H01S5/343 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译： 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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2.发明申请SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES WITH MISCUTS LESS THAN +/-15 DEGREES IN THE C-DIRECTION 有权M-PLANE基板上的半极性III型氮化物光电器件，C型方向的误差小于+/- 15度公开(公告)号：US20110216795A1
公开(公告)日：2011-09-08
申请号：US13041120
申请日：2011-03-04
申请人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
发明人： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , S. James Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
摘要翻译： 在杂交GaN上生长的光电子器件，其中杂交包括GaN的半极性GaN晶体平面（从GaN的m面）和GaN的c方向偏离x度，其中-15
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3.发明申请公开(公告)号：US20110170569A1
公开(公告)日：2011-07-14
申请号：US12908478
申请日：2010-10-20
申请人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
发明人： Anurag Tyagi , Robert M. Farrell , Chia-Yen Huang , Po Shan Hsu , Daniel A. Haeger , Kathryn M. Kelchner , Hiroaki Ohta , Shuji Nakamura , Steven P. DenBaars , James S. Speck
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01S5/0014 , H01S5/06216 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
摘要翻译： 采用具有一个或多个蚀刻小面镜的空腔的半极性{20-21} III族氮化物基激光二极管。 蚀刻刻面镜提供了任意控制激光二极管的空腔或条纹的取向和尺寸的能力，从而能够控制激光二极管的电学和光学性质。
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4.发明申请STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES 审中-公开（Ga，Al，In，B）N激光二极管中的选择性蚀刻的结构和方法公开(公告)号：US20110044364A1
公开(公告)日：2011-02-24
申请号：US12859661
申请日：2010-08-19
申请人： Robert M. Farrell , Daniel A. Haeger , Po Shan Hsu , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell , Daniel A. Haeger , Po Shan Hsu , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01S5/028 , H01L21/306
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/209 , H01S5/22 , H01S5/3063 , H01S5/3213
摘要： A structure and method that can be used to achieve selective etching in (Ga, Al, In, B) N laser diodes, comprising fabricating (Ga, Al, In, B) N laser diodes with one or more Al-containing etch stop layers.
摘要翻译： 可用于实现（Ga，Al，In，B）N激光二极管中的选择性蚀刻的结构和方法，包括用一个或多个含Al蚀刻停止层制造（Ga，Al，In，B）N激光二极管 。
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公开(公告)号：US20110103418A1
公开(公告)日：2011-05-05
申请号：US12913638
申请日：2010-10-27
申请人： Matthew T. Hardy , You-Da Lin , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura , Kathryn M. Kelchner
发明人： Matthew T. Hardy , You-Da Lin , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura , Kathryn M. Kelchner
IPC分类号： H01S5/323 , H01L33/22 , H01L21/302
CPC分类号： H01L33/0045 , B82Y20/00 , H01S5/1082 , H01S5/22 , H01S5/34333
摘要： An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device.
摘要翻译： 一种光电子器件，包括有源区和波导结构，以提供从有源区发射的光的光学限制; 在装置的相对端上的一对具有相反表面极性的小面; 和通过结晶化学蚀刻工艺被粗糙化的其中一个方面，其中该器件是基于非极性或半极性（Ga，In，Al，B）N的器件。
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6.发明授权Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations 有权通过部分或完全松弛的具有失配位错的铝铟镓氮层，在半极性氮化物量子阱中进行各向异性应变控制公开(公告)号：US08481991B2
公开(公告)日：2013-07-09
申请号：US12861652
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01L29/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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7.发明申请ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 有权通过部分或完全放松的铝氮化镓氮化物层与杂质分离的二氧化氮量子阱中的各向异性应变控制公开(公告)号：US20110062415A1
公开(公告)日：2011-03-17
申请号：US12861652
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L33/0075 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2201 , H01S5/32 , H01S5/3201 , H01S5/3202 , H01S5/3403 , H01S5/3425 , H01S2301/173
摘要： An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
摘要翻译： 用于基于III-Nitride的光学器件的外延结构，其包括在下层上具有各向异性应变的活性层，其中由于存在失配而使底层中的晶格常数和应变在至少一个方向上部分或完全松弛 位错，使得有源层中的各向异性应变被下层调制。
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8.发明授权Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface 有权部分或完全松弛的合金上的半极性或非极性氮化物器件在异质界面处具有失配位错公开(公告)号：US09159553B2
公开(公告)日：2015-10-13
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
IPC分类号： H01S5/00 , H01L21/02 , B82Y20/00 , H01L33/00 , H01S5/32 , H01S5/343 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译： 具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。 这可以用作高In组合设备的模板层。 具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW）） 有可能
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9.发明申请SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE 有权部分或完全放松的合金的二极体氮化物在异质结中具有杂质偏离公开(公告)号：US20110064103A1
公开(公告)日：2011-03-17
申请号：US12861532
申请日：2010-08-23
申请人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
发明人： Hiroaki Ohta , Feng Wu , Anurag Tyagi , Arpan Chakraborty , James S. Speck , Steven P. DenBaars , Shuji Nakamura , Erin C. Young
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
摘要翻译： 具有松散晶格常数的无位错高质量模板，通过空间限制异质界面周围的错配位错制造。 这可以用作高In组合设备的模板层。 具体地说，本发明制备了高质量的InGaN模板（In组成为约5-10％），并且可以在这些模板上生长比其它模板高得多的In-InGaN量子阱（QW）（或多量子阱（MQW）） 有可能
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10.发明申请STRUCTURE FOR IMPROVING THE MIRROR FACET CLEAVING YIELD OF (Ga,Al,In,B)N LASER DIODES GROWN ON NONPOLAR OR SEMIPOLAR (Ga,Al,In,B)N SUBSTRATES 审中-公开（Ga，Al，In，B）N基板上形成的（Ga，Al，In，B）N激光二极管的反射面薄膜的结构公开(公告)号：US20110007766A1
公开(公告)日：2011-01-13
申请号：US12833607
申请日：2010-07-09
申请人： Robert M. Farrell , Matthew T. Hardy , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Robert M. Farrell , Matthew T. Hardy , Hiroaki Ohta , Steven P. DenBaars , James S. Speck , Shuji Nakamura
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/2018 , H01S5/2031
摘要： A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing waveguide cladding layers, and one of more n-type doped aluminum-containing layers that can be used to assist with facet cleaving along a particular crystallographic plane.
摘要翻译： 用于改善生长在非极性或半极性（Ga，Al，In，B）N衬底上的（Ga，Al，In，B）N激光二极管的镜面切割产率的结构。 该结构包括非极性或半极性（Ga，Al，In，B）N激光二极管，其包括波导芯，其在不存在p型掺杂的含铝波导覆层的情况下为器件的工作提供足够的光学限制，并且 更多n型掺杂的含铝层，可用于辅助沿着特定结晶平面的切面。
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