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公开(公告)号：US5384912A
公开(公告)日：1995-01-24
申请号：US892607
申请日：1992-05-29
申请人： Michael A. Ogrinc , Robert A. Card , Chris R. Burns , Charles P. Clarke , Ronda L. Collier , Kevin M. Collins , Stephen E. Crane , Clifford Hersh , Brian C. Knittel , Steven T. Mayer , Lawrence Stead , Andrew E. Wade , Robert L. Lay , Bradley G. Stewart , Raymond Pon , Robert Leyland , John F. Schlag , Sven Jensen
发明人： Michael A. Ogrinc , Robert A. Card , Chris R. Burns , Charles P. Clarke , Ronda L. Collier , Kevin M. Collins , Stephen E. Crane , Clifford Hersh , Brian C. Knittel , Steven T. Mayer , Lawrence Stead , Andrew E. Wade , Robert L. Lay , Bradley G. Stewart , Raymond Pon , Robert Leyland , John F. Schlag , Sven Jensen
CPC分类号： G06T1/60 , G06F17/175 , G06T3/00 , H04N5/2628 , H04N7/002 , H04N9/74
摘要： A video digital signal processing and display system that allows real time processing of video images with extensive filtering and inter-pixel interpolation. The system includes a front end user and program interface supported by a personal computer, and also includes a microprocessor for controlling the system and specialized video circuitry including an image translator.The image translator performs image translation, perspective projection, scaling, rotation, border insertion, and formation of composite images. The image translator interacts with the other specialized video circuitry which includes a frame constructor, a keyer and crosspoint switches, and a frame store constructor.
摘要翻译： 一种视频数字信号处理和显示系统，允许对具有广泛滤波和像素间插值的视频图像进行实时处理。 该系统包括由个人计算机支持的前端用户和程序接口，并且还包括用于控制系统的微处理器和包括图像转换器的专用视频电路。 图像翻译器执行图像翻译，透视投影，缩放，旋转，边框插入和合成图像的形成。 图像翻译器与包括帧构造器，键控器和交叉点开关的其他专用视频电路以及帧存储器构造器进行交互。
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公开(公告)号：US06201924B1
公开(公告)日：2001-03-13
申请号：US08482905
申请日：1995-06-07
申请人： Stephen E. Crane , LeeAnn Heringer , Michael Shinsky , Gerald A. Raitzer , Michael A. Ogrinc , Steven T. Mayer
发明人： Stephen E. Crane , LeeAnn Heringer , Michael Shinsky , Gerald A. Raitzer , Michael A. Ogrinc , Steven T. Mayer
IPC分类号： H04N576
CPC分类号： G11B27/024 , G11B27/028 , G11B27/032 , G11B27/034 , G11B27/34 , G11B2220/20 , G11B2220/2525 , G11B2220/90
摘要： A disk-assisted system for editing video tapes. Source material from video tapes is logged onto random access storage such as a hard disk drive using of a Macintosh-based computer system. At any one time, only a small portion of the tape material is stored as video frames on the computer disk. By software control, material is cached back and forth between the computer disk and the video tape. Thus editing is accomplished and an edit decision list constructed for compilation of the final video production. This provides the advantage of fast access time for editing of the material which is on the disk while allowing actual physical editing at the end of the project of the actual video tape material. The processes of logging the material onto the disk and editing the final tape are performed automatically.
摘要翻译： 用于编辑录像带的磁盘辅助系统。 来自视频磁带的源材料被记录到使用基于Macintosh的计算机系统的随机存取存储器例如硬盘驱动器上。 在任何一个时间，只有一小部分磁带材料作为视频帧存储在计算机磁盘上。 通过软件控制，材料在计算机磁盘和录像带之间来回缓存。 因此编辑完成并且为编译最终的视频制作而构造的编辑决定列表。 这提供了用于编辑磁盘上的材料的快速访问时间的优点，同时允许在实际录像带材料的项目结束时的实际物理编辑。 将材料记录到磁盘上并编辑最终磁带的过程自动执行。
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公开(公告)号：US09109295B2
公开(公告)日：2015-08-18
申请号：US12577619
申请日：2009-10-12
摘要： An electroplating apparatus for filling recessed features on a semiconductor substrate includes an electrolyte concentrator configured for concentrating an electrolyte having Cu2+ ions to form a concentrated electrolyte solution that would have been supersaturated at 20° C. The electrolyte is maintained at a temperature that is higher than 20° C., such as at least at about 40° C. The apparatus further includes a concentrated electrolyte reservoir and a plating cell, where the plating cell is configured for electroplating with concentrated electrolyte at a temperature of at least about 40° C. Electroplating with electrolytes having Cu2+ concentration of at least about 60 g/L at temperatures of at least about 40° C. results in very fast copper deposition rates, and is particularly well-suited for filling large, high aspect ratio features, such as through-silicon vias.
摘要翻译： 用于在半导体衬底上填充凹陷特征的电镀设备包括电解质浓缩器，其被配置用于浓缩具有Cu 2+离子的电解质，以形成在20℃下已经过饱和的浓缩电解质溶液。电解质保持在高于 20℃，例如至少约40℃。该设备还包括浓缩电解质储存器和电镀池，其中电镀单元被配置为在至少约40℃的温度下用浓缩电解质电镀。 在至少约40℃的温度下，具有Cu2 +浓度至少约60g / L的电解质的电镀导致非常快的铜沉积速率，并且特别适合于填充大的高纵横比特征，例如通过 硅通孔。
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4.发明授权Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers 有权铜电镀工艺，用于跨晶片沉积均匀并在半贵金属涂覆的晶片上无空隙填充公开(公告)号：US08513124B1
公开(公告)日：2013-08-20
申请号：US12785205
申请日：2010-05-21
IPC分类号： H01L21/44
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L2221/1089
摘要： Disclosed are methods of depositing a copper seed layer to be used for subsequent electroplating a bulk-layer of copper thereon. A copper seed layer may be deposited with different processes, including CVD, PVD, and electroplating. With electroplating methods for depositing a copper seed layer, disclosed are methods for depositing a copper alloy seed layer, methods for depositing a copper seed layer on the semi-noble metal layer with a non-corrosive electrolyte, methods of treating the semi-noble metal layer that the copper seed layer is deposited on, and methods for promoting a more uniform copper seed layer deposition across a semiconductor wafer.
摘要翻译： 公开了一种沉积铜籽晶层的方法，该铜籽晶层用于随后电镀铜的体层。 铜种子层可以以不同的工艺沉积，包括CVD，PVD和电镀。 利用用于沉积铜籽晶层的电镀方法，公开了用于沉积铜合金晶种层的方法，用非腐蚀性电解质在半贵金属层上沉积铜籽晶层的方法，处理半贵金属的方法 沉积铜籽晶层的层，以及用于促进越过半导体晶片的更均匀的铜籽晶层沉积的方法。
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公开(公告)号：US08500985B2
公开(公告)日：2013-08-06
申请号：US11827800
申请日：2007-07-13
CPC分类号： C25D5/022 , C25F5/00 , H05K3/07 , H05K3/108 , H05K2203/0108 , H05K2203/0392 , H05K2203/0537 , H05K2203/0713
摘要： Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
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公开(公告)号：US08481432B2
公开(公告)日：2013-07-09
申请号：US13116963
申请日：2011-05-26
申请人： Steven T. Mayer , Daniel A. Koos , Eric Webb
发明人： Steven T. Mayer , Daniel A. Koos , Eric Webb
IPC分类号： H01L21/302
CPC分类号： C23F1/02 , C23C18/1608 , C23C18/1834 , C23F1/18 , C23F1/34 , H01L21/288 , H01L21/32134 , H01L21/76849 , H01L21/76856 , H01L21/76858 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching process involves oxidation of the exposed metal to form a metal oxide that is subsequently removed from the surface of the substrate. The exposed metal may be oxidized by using solutions containing oxidizing agents such as peroxides or by using oxidizing gases such as those containing oxygen or ozone. The metal oxide produced is then removed using suitable metal oxide etching agents such as glycine. The oxidation and etching may occur in the same solution. In other embodiments, the exposed metal is directly etched without forming a metal oxide. Suitable direct metal etching agents include any number of acidic solutions. The process allows for controlled oxidation and/or etching with reduced pitting. After the metal regions are etched and recessed in the substrate surface, a conductive capping layer is formed using electroless deposition over the recessed exposed metal regions.
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公开(公告)号：US08475637B2
公开(公告)日：2013-07-02
申请号：US12337147
申请日：2008-12-17
申请人： Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
发明人： Jingbin Feng , Zhian He , Robert Rash , Steven T. Mayer
CPC分类号： C25D7/123 , C25D17/001 , C25D17/002
摘要： Embodiments related to increasing a uniformity of an electroplated film are disclosed. For example, one disclosed embodiment provides an electroplating apparatus comprising a plating chamber, a work piece holder, a cathode contact configured to electrically contact a work piece, and an anode contact configured to electrically contact an anode disposed in the plating chamber. A diffusing barrier is disposed between the cathode contact and the anode contact to provide a uniform electrolyte flow to the work piece, and electrolyte delivery and return paths are provided for delivering electrolyte to and away from the plating chamber. Additionally, a vented electrolyte manifold is disposed in the electrolyte delivery path immediately upstream of the plating chamber, the vented electrolyte manifold comprising one or more electrolyte delivery openings that open to the plating chamber and one or more vents that open to a location other than the plating chamber.
摘要翻译： 公开了与提高电镀膜的均匀性有关的实施例。 例如，一个公开的实施例提供了一种电镀设备，其包括电镀室，工件保持器，构造成电接触工件的阴极接触件和被配置为电接触设置在电镀室中的阳极的阳极接触件。 扩散阻挡层设置在阴极接触件和阳极接触件之间，以提供均匀的电解质流向工件，并且提供电解质输送和返回路径用于将电解质输送到电镀室和远离电镀室。 另外，排气的电解液歧管设置在紧邻镀室的上游的电解质输送路径中，排出的电解质歧管包括一个或多个向电镀室敞开的电解质输送开口，以及一个或多个通向出口 电镀室。
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8.发明授权公开(公告)号：US08419964B2
公开(公告)日：2013-04-16
申请号：US12199412
申请日：2008-08-27
IPC分类号： H01L21/302
CPC分类号： H01L21/6708 , H01L21/02068 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67745 , H01L21/68735 , H01L21/68785
摘要： Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.
摘要翻译： 描述了用于从半导体晶片的边缘斜面区域去除金属的化学蚀刻方法和相关模块。 在晶片的边缘斜面区域上施加蚀刻剂之前，该方法和系统提供了薄层的预漂洗液体。 蚀刻剂较少稀释，并通过稀薄的冲洗液层更快地扩散。 公开了一种边缘斜面去除实施例，其涉及在减少加工时间，使金属锥度变窄并允许随后的化学机械抛光方面特别有效。
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9.发明申请公开(公告)号：US20110284386A1
公开(公告)日：2011-11-24
申请号：US13110488
申请日：2011-05-18
申请人： Mark J. Willey , Steven T. Mayer
发明人： Mark J. Willey , Steven T. Mayer
CPC分类号： C25D3/38 , C25D5/022 , C25D7/123 , C25D21/12 , H01L21/2885 , H01L21/76879 , H01L21/76898 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A method for electrofilling large, high aspect ratio recessed features with copper without depositing substantial amounts of copper in the field region is provided. The method allows completely filling recessed features having aspect ratios of at least about 5:1 such as at least about 10:1, and widths of at least about 1 μm in a substantially void-free manner without depositing more than 5% of copper in the field region (relative to the thickness deposited in the recessed feature). The method involves contacting the substrate having one or more large, high aspect ratio recessed features (such as a TSVs) with an electrolyte comprising copper ions and an organic dual state inhibitor (DSI) configured for inhibiting copper deposition in the field region, and electrodepositing copper under potential-controlled conditions, where the potential is controlled not exceed the critical potential of the DSI.
摘要翻译： 提供了一种用于电镀大量，高纵横比的凹陷特征与铜而不在现场区域中沉积大量铜的方法。 该方法允许以基本无空隙的方式完全填充具有至少约5:1的纵横比（例如至少约10:1）和至少约1μm的宽度的凹陷特征，而不沉积超过5％的铜 场区域（相对于沉积在凹陷特征中的厚度）。 该方法包括将具有一个或多个大的，高纵横比的凹陷特征（例如TSV）的基底与包含铜离子的电解质和被配置用于抑制场区中的铜沉积的有机双态抑制剂（DSI）接触，以及电沉积 在电势控制条件下，电位控制的铜不超过DSI的临界电位。
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公开(公告)号：US08026174B1
公开(公告)日：2011-09-27
申请号：US12496120
申请日：2009-07-01
IPC分类号： H01L21/445 , C25D17/28
CPC分类号： C25D17/001 , C25D3/38 , C25D5/10 , H01L21/2885 , H01L21/67161 , H01L21/6719 , H01L21/6723 , H01L21/67751 , H01L21/76877 , Y10T29/41
摘要： Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.
摘要翻译： 提供了顺序处理半导体晶片的方法和装置。 顺序过程采用多工位处理模块，其中特别包含的晶片工艺被分为子工艺，每个子工艺被优化用于增加晶圆到晶片的均匀性，结果质量和整个晶片生产量。 在一个示例中，铜电镀模块包括用于润湿，起始，种子层修复，填充，覆盖层，回收和冲洗的分离站。
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