公开(公告)号：USRE43725E1

公开(公告)日：2012-10-09

申请号：US11432793

申请日：2006-05-11

申请人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

发明人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

IPC分类号： H01L21/00

CPC分类号： H01L33/04 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S438/93

摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.

摘要翻译： 公开了一种发光二极管。 二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层， 与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。

公开(公告)号：US20120153343A1

公开(公告)日：2012-06-21

申请号：US13406251

申请日：2012-02-27

申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

IPC分类号： H01L33/48 ,  H01L33/36

CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。

公开(公告)号：US08044384B2

公开(公告)日：2011-10-25

申请号：US12698658

申请日：2010-02-02

申请人： Michael John Bergmann ,  David Todd Emerson

发明人： Michael John Bergmann ,  David Todd Emerson

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

摘要翻译： 提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。 发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包含至少一个量子阱结构，在有源区上包括铟的III族氮化物层， 在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。 包括铟的III族氮化物层也可以包括铝。

公开(公告)号：US07791101B2

公开(公告)日：2010-09-07

申请号：US12145213

申请日：2008-06-24

申请人： Michael John Bergmann ,  Daniel Carleton Driscoll ,  David Todd Emerson

发明人： Michael John Bergmann ,  Daniel Carleton Driscoll ,  David Todd Emerson

IPC分类号： H01L29/26

CPC分类号： H01L33/0079 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01L33/405

摘要： Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.

摘要翻译： 发光器件包括氮化镓基外延结构，其包括活性发光区和氮化镓基外层，例如氮化镓。 诸如氮化铟镓的氮化铟基层直接设置在外层上。 反射金属层或透明导电氧化物层直接设置在与外层相反的氮化铟镓层上。 氮化铟镓层与外层形成直接的欧姆接触。 不需要使用欧姆金属层。 还公开了相关的制造方法。

公开(公告)号：US07692182B2

公开(公告)日：2010-04-06

申请号：US10899791

申请日：2004-07-27

申请人： Michael John Bergmann ,  David Todd Emerson

发明人： Michael John Bergmann ,  David Todd Emerson

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06

摘要： Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

摘要翻译： 提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。 发光器件包括n型III族氮化物层，n型III族氮化物层上的III族氮化物基有源区，并且包括至少一个量子阱结构，在有源区上包括铟的III族氮化物层， 在包括铟的III族氮化物层上包括铝的p型III族氮化物层，n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。 包括铟的III族氮化物层也可以包括铝。

公开(公告)号：US07645342B2

公开(公告)日：2010-01-12

申请号：US11272909

申请日：2005-11-14

申请人： David Todd Emerson ,  Robert Allen Garner ,  Michael John Bergmann ,  Keenan Carlyle Brown ,  Michael Allen Pennington ,  Thomas Goldthwaite Coleman

发明人： David Todd Emerson ,  Robert Allen Garner ,  Michael John Bergmann ,  Keenan Carlyle Brown ,  Michael Allen Pennington ,  Thomas Goldthwaite Coleman

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/46 ,  C30B25/105 ,  H01L21/67103

摘要： A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor.

摘要翻译： 公开了一种提高长丝基电阻加热气相沉积系统的寿​​命和生产率的气相沉积反应器和相关方法。 反应器和方法提供加热细丝，同时允许细丝在温度升高的作用下膨胀时移动，同时将长丝的膨胀运动限制到防止细丝的膨胀运动与任何部分产生不期望的接触的量 的反应器。

公开(公告)号：USD593968S1

公开(公告)日：2009-06-09

申请号：US29328502

申请日：2008-11-25

申请人： John Edmond ,  James Ibbetson ,  Michael John Bergmann ,  Amber Christine Salter ,  David Todd Emerson ,  Ashay Chitnis ,  Bernd P. Keller ,  Kevin Haberern

设计人： John Edmond ,  James Ibbetson ,  Michael John Bergmann ,  Amber Christine Salter ,  David Todd Emerson ,  Ashay Chitnis ,  Bernd P. Keller ,  Kevin Haberern

公开(公告)号：US20090029493A1

公开(公告)日：2009-01-29

申请号：US12243507

申请日：2008-10-01

申请人： David Todd Emerson ,  Michael John Bergmann

发明人： David Todd Emerson ,  Michael John Bergmann

IPC分类号： H01L21/00

CPC分类号： H01L33/24 ,  H01L33/007 ,  H01L33/32

摘要： Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the plurality of layers of the active region to extend into the pits. In some embodiments, the active region comprises a plurality of quantum wells. The pit opening region may comprise a superlattice structure. The pits may surround their corresponding dislocations and the plurality of layers may extend to the respective dislocations. At least one of the pits of the plurality of pits may originate in a layer disposed between the pit opening layer and a substrate on which the pit opening layer is provided. The active region may be a Group III nitride based active region. Methods of fabricating such devices are also provided.

摘要翻译： 发光器件包括包括多个层的有源区和设置有源区的凹坑开口区。 凹坑开口区域被配置为将多个凹坑的开口的尺寸扩大到足以使有源区域的多个层延伸到凹坑中的尺寸。 在一些实施例中，有源区包括多个量子阱。 凹坑开口区域可以包括超晶格结构。 凹坑可以围绕其相应的位错，并且多个层可以延伸到相应的位错。 多个凹坑中的凹坑中的至少一个凹坑可以起源于设置在凹坑开口层和设置凹坑开口层的基底之间的层。 有源区可以是基于III族氮化物的有源区。 还提供了制造这种装置的方法。

公开(公告)号：US06958497B2

公开(公告)日：2005-10-25

申请号：US10140796

申请日：2002-05-07

申请人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

发明人： David Todd Emerson ,  James Ibbetson ,  Michael John Bergmann ,  Kathleen Marie Doverspike ,  Michael John O'Loughlin ,  Howard Dean Nordby, Jr. ,  Amber Christine Abare

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L29/22

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L33/32

摘要： A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride based barrier layer, a Group III nitride based quantum well layer on the first barrier layer and a second Group III nitride based barrier layer. A Group III nitride based semiconductor device and methods of fabricating a Group III nitride based semiconductor device having an active region comprising at least one quantum well structure are provided. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1−XN and InYGa1−YN, where 0≦X

摘要翻译： 在超晶格上提供了具有III族氮化物基超晶格和III族氮化物基活性区的发光二极管。 有源区具有至少一个量子阱结构。 量子阱结构包括第一III族氮化物基阻挡层，第一阻挡层上的基于III族氮化物的量子阱层和第二III族氮化物基阻挡层。 提供III族氮化物基半导体器件以及制造具有包括至少一个量子阱结构的有源区的III族氮化物基半导体器件的方法。 量子阱结构包括包含III族氮化物的阱支撑层，在阱支撑层上包含III族氮化物的量子阱层和在量子阱层上包含III族氮化物的覆盖层。 还提供了一种III族氮化物基半导体器件，其包括具有至少两个交替层的In 1 N 1 Ga 1-X N和In 1 N的纳米氮基超晶格， SUB> Y 1-Y N，其中0 <= X <1且0 <= Y <1，X不等于Y.该半导体器件可以是发光 二极管与III族氮化物基活性区。 有源区可以是多量子阱有源区。

公开(公告)号：US06734033B2

公开(公告)日：2004-05-11

申请号：US10458051

申请日：2003-06-10

申请人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

发明人： David Todd Emerson ,  Amber Christine Abare ,  Michael John Bergmann

IPC分类号： H01L2100

CPC分类号： H01L33/04 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S438/93

摘要： A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.

摘要翻译： 公开了一种发光二极管。 二极管包括具有第一导电类型的碳化硅衬底，在SiC衬底之上的与衬底具有相同导电类型的第一氮化镓层，在由多个重复的交替层组成的GaN层上形成的超晶格， GaN，InGaN和AlInGaN，具有与第一GaN层相同的导电类型的超晶格上的第二GaN层，第二GaN层上的多量子阱，多量子阱上的第三GaN层， 与衬底和第一GaN层具有相反导电类型的第三GaN层，与SiC衬底的欧姆接触以及与接触结构的欧姆接触。