公开(公告)号：US20190093253A1

公开(公告)日：2019-03-28

申请号：US16179363

申请日：2018-11-02

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  National Institute of Advanced Industrial Science and Technology ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

Inventor： Hitoshi NOGUCHI ,  Shozo SHIRAI ,  Toshiharu MAKINO ,  Masahiko OGURA ,  Hiromitsu KATO ,  Hiroyuki KAWASHIMA ,  Daisuke KUWABARA ,  Satoshi YAMASAKI ,  Daisuke TAKEUCHI ,  Norio TOKUDA ,  Takao INOKUMA ,  Tsubasa MATSUMOTO

IPC: C30B25/04 ,  H01L29/16 ,  H01L21/02 ,  C30B25/20 ,  C30B29/04 ,  C30B25/18 ,  H01L21/3065 ,  H01L21/308

Abstract: A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

公开(公告)号：US20170247814A1

公开(公告)日：2017-08-31

申请号：US15445196

申请日：2017-02-28

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

Inventor： Hitoshi NOGUCHI ,  Shozo SHIRAI ,  Toshiharu MAKINO ,  Masahiko OGURA ,  Hiromitsu KATO ,  Hiroyuki KAWASHIMA ,  Daisuke KUWABARA ,  Satoshi YAMASAKI ,  Daisuke TAKEUCHI ,  Norio TOKUDA ,  Takao INOKUMA ,  Tsubasa MATSUMOTO

IPC: C30B25/18 ,  H01L21/02 ,  C30B29/04 ,  H01L29/16 ,  C30B25/20 ,  C30B25/04

CPC classification number: C30B25/186 ,  C30B25/04 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02647 ,  H01L21/02658 ,  H01L21/3065 ,  H01L21/3081 ,  H01L29/1602

Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

公开(公告)号：US20240279842A1

公开(公告)日：2024-08-22

申请号：US18567210

申请日：2022-05-24

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Hitoshi NOGUCHI ,  Toshiharu MAKINO ,  Masahiko OGURA ,  Hiromitsu KATO

IPC: C30B29/04 ,  C01B32/26 ,  C30B25/08 ,  C30B25/10 ,  C30B25/18

CPC classification number: C30B29/04 ,  C01B32/26 ,  C30B25/08 ,  C30B25/105 ,  C30B25/183 ,  C01P2002/72

Abstract: A method for manufacturing a diamond substrate, the method being a method for producing a (111) oriented diamond crystal on an underlying substrate by epitaxial growth using hydrogen-diluted methane as a main source gas by a microwave plasma CVD method, a direct current plasma CVD method, a hot-filament CVD method, or an arc discharge plasma jet CVD method, in which a growth rate is less than 3.8 μm/h. Thereby, a diamond crystal applicable to an electronic and magnetic device and a method to produce this crystal are stably provided in which the crystal with the NV axis with orientation and high-density NVC obtained by the CVD method under a predetermined condition is grown on a highly oriented (111) diamond base substrate obtained by the CVD method also under a predetermined condition.

公开(公告)号：US20180223447A1

公开(公告)日：2018-08-09

申请号：US15887207

申请日：2018-02-02

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

Inventor： Hitoshi NOGUCHI ,  Toshiharu MAKINO ,  Masahiko OGURA ,  Hiromitsu KATO ,  Hiroyuki KAWASHIMA ,  Satoshi YAMASAKI ,  Norio TOKUDA

IPC: C30B25/20 ,  C30B25/18 ,  C30B29/04 ,  H01L21/02

CPC classification number: C30B25/20 ,  C23C16/0281 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B25/183 ,  C30B25/186 ,  C30B29/04 ,  H01L21/00 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02634

Abstract: It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

公开(公告)号：US20170247811A1

公开(公告)日：2017-08-31

申请号：US15445134

申请日：2017-02-28

Applicant: SHIN-ETSU CHEMICAL CO., LTD. ,  National Institute of Advanced Industrial Science and Technology ,  NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY

Inventor： Hitoshi NOGUCHI ,  Shozo SHIRAI ,  Toshiharu MAKINO ,  Masahiko OGURA ,  Hiromitsu KATO ,  Hiroyuki KAWASHIMA ,  Daisuke KUWABARA ,  Satoshi YAMASAKI ,  Daisuke TAKEUCHI ,  Norio TOKUDA ,  Takao INOKUMA ,  Tsubasa MATSUMOTO

IPC: C30B25/04 ,  H01L21/02 ,  C30B29/04 ,  H01L29/16 ,  C30B25/18 ,  C30B25/20

CPC classification number: C30B25/04 ,  C30B25/186 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02057 ,  H01L21/02085 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/3086 ,  H01L29/1602

Abstract: The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

公开(公告)号：US20160126420A1

公开(公告)日：2016-05-05

申请号：US14775170

申请日：2014-03-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Toshiharu MAKINO ,  Satoshi YAMASAKI ,  Hideyo OOKUSHI ,  Masahiko OGURA ,  Hiromitsu KATO ,  Daisuke TAKEUCHI

IPC: H01L33/34 ,  H01L33/50

CPC classification number: H01L33/343 ,  H01L33/34 ,  H01L33/50 ,  H01L33/508

Abstract: A white light-emitting device of the present invention includes a substrate (101); a diamond semiconductor layer (105) provided on the substrate (101), in which one or a plurality of p-type α layers (102), a p-type or n-type γ layer (103), and one or a plurality of n-type β layers (104) are laminated in this order from the substrate (101); a first electrode (106) provided on the α layer (102) which injects an electric current; a second electrode (107) provided on the β layer (104) which injects an electric current; and a fluorescent member (108) which coats a light emission extraction region of the surface of the diamond semiconductor layer.

Abstract translation: 本发明的白色发光装置包括：基板（101）; 设置在基板（101）上的金刚石半导体层（105），其中一个或多个p型α层（102），p型或n型γ层（103）和一个或多个 的n型＆bgr 层（104）从基板（101）依次层叠; 设置在注入电流的α层（102）上的第一电极（106） 设置在第一电极上的第二电极（107） 注入电流的层（104）; 以及涂覆金刚石半导体层的表面的发光提取区域的荧光部件（108）。

公开(公告)号：US20150075420A1

公开(公告)日：2015-03-19

申请号：US14488629

申请日：2014-09-17

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Hitoshi NOGUCHI ,  Daisuke TAKEUCHI ,  Satoshi YAMASAKI ,  Masahiko OGURA ,  Hiromitsu KATO ,  Toshiharu MAKINO ,  Hideyo OKUSHI

IPC: C30B25/16 ,  C30B29/04 ,  C30B25/18

CPC classification number: C30B25/16 ,  C30B25/105 ,  C30B25/12 ,  C30B25/18 ,  C30B25/183 ,  C30B25/186 ,  C30B29/04

Abstract: A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

Abstract translation: 一种制造单晶金刚石的方法，其中气相合成单晶金刚石另外沉积在通过气相合成获得的单晶金刚石种子基底上，包括测量种子基底的平整度的步骤，确定是否 基于平坦度的测量结果来平坦化种子基底，以及根据确定平坦化需要平坦化的种子基底之后的另外沉积气相合成单晶金刚石的步骤的以下两个步骤中的任何一个步骤 以及基于所述测定，另外沉积气相合成单晶金刚石而不使其不需要扁平化的种子基底平坦化的步骤。