公开(公告)号：US09343207B2

公开(公告)日：2016-05-17

申请号：US14369659

申请日：2013-08-27

申请人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

发明人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： H01C7/10 ,  H01C7/108 ,  H01L45/00 ,  C23C14/00 ,  C23C14/08 ,  H01C17/06 ,  H01C17/12

CPC分类号： H01C7/108 ,  C23C14/0036 ,  C23C14/08 ,  H01C17/06 ,  H01C17/12 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

摘要翻译： 提供一种电阻变化器件，可以免受过电流的影响，而不会增大器件尺寸。 根据本实施例的电阻改变装置1包括下电极层3，上电极层6，第一金属氧化物层51，第二金属氧化物层52和限流层4.第一金属氧化物层51 设置在下电极层3和上电极层6之间，并且具有第一电阻率。 第二金属氧化物层52设置在第一金属氧化物层51和上电极层6之间，并且具有比第一电阻率高的第二电阻率。 限流层4设置在下电极层3和第一金属氧化物层51之间，并且具有比第一电阻率高的第三电阻率并且低于第二电阻率。

公开(公告)号：US20150056373A1

公开(公告)日：2015-02-26

申请号：US14348006

申请日：2013-07-25

申请人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

发明人： Natsuki Fukuda ,  Kazunori Fukuju ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/00 ,  C23C16/44 ,  H01J37/34 ,  C23C16/455

CPC分类号： C23C14/0063 ,  C23C14/0068 ,  C23C14/083 ,  C23C16/4412 ,  C23C16/455 ,  H01J37/32449 ,  H01J37/34 ,  H01J37/3411 ,  H01J2237/006

摘要： [Object] To provide a deposition method and a deposition apparatus capable of forming a metal compound layer having desired film characteristics uniformly in a substrate surface.[Solving Means] A deposition method according to an embodiment of the present invention includes evacuating an inside of a vacuum chamber 10 having a deposition chamber 101 formed inside a cylindrical partition wall 20 and an exhaust chamber 102 formed outside the partition wall 20, via an exhaust line 50 connected to the exhaust chamber 102. A process gas containing a reactive gas is introduced into the exhaust chamber 102. With the deposition chamber 101 being maintained at a lower pressure than the exhaust chamber 102, the process gas is supplied to the deposition chamber 101 via a gas flow passage 80 between the partition wall 20 and the vacuum chamber 10.

摘要翻译： 本发明提供能够在基板表面上均匀地形成具有期望的膜特性的金属化合物层的沉积方法和沉积装置。 [解决方案]根据本发明的实施方式的沉积方法包括将具有形成在圆筒形分隔壁20内的沉积室101和形成在分隔壁20外部的排气室102的真空室10的内部经由 连接到排气室102的排气管路50.将包含反应性气体的处理气体引入排气室102.在沉积室101保持在比排气室102低的压力下，将处理气体供应到沉积物 室101经由分隔壁20和真空室10之间的气体流路80。

公开(公告)号：US09269903B2

公开(公告)日：2016-02-23

申请号：US14122966

申请日：2012-06-07

申请人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Youhei Ogawa ,  Koukou Suu

发明人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Youhei Ogawa ,  Koukou Suu

IPC分类号： C23C14/24 ,  H01L45/00 ,  C23C14/54 ,  C23C14/08 ,  C23C14/34 ,  H01J37/34 ,  H01L27/10

CPC分类号： H01L45/1625 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/3492 ,  C23C14/542 ,  C23C14/548 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3429 ,  H01L27/101 ,  H01L45/04 ,  H01L45/146

摘要： [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed.[Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

摘要翻译： 提供一种用于制造可变电阻元件的方法和装置，通过该方法和装置可以精确地形成具有所需电阻率的金属氧化物层。 本发明的实施方式的可变电阻元件的制造方法包括：形成具有第一电阻率的第一金属氧化物和形成具有与第一电阻率不同的第二电阻率的第二金属氧化物的工序的工序; 电阻率。 第一金属氧化物通过溅射形成在基板上，同时溅射由金属氧化物制成的第一靶，以第一功率由金属制成的第二靶。 通过在溅射第一靶的同时以不同于第一功率的第二功率溅射第二靶，在第一金属氧化物层上形成第二金属氧化物层。

公开(公告)号：US09281477B2

公开(公告)日：2016-03-08

申请号：US14125254

申请日：2012-06-17

申请人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Koukou Suu

发明人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Koukou Suu

IPC分类号： H01L45/00 ,  G11C11/56 ,  G11C13/00

CPC分类号： H01L45/1253 ,  G11C11/5614 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/56 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.

摘要翻译： 为了提供不需要成形工艺的电阻变化元件，并且能够降低功耗并且元件的小型化，并提供其制造方法。 根据本发明实施例的电阻变化元件1包括底电极层3，顶电极层5和氧化物半导体层4.氧化物半导体层4具有第一金属氧化物层41和第二金属氧化物层 第一金属氧化物层41形成在底电极层3和顶电极层5之间，并与底电极层3欧姆接触。第二金属氧化物层42形成在第一金属氧化物层41和 顶部电极层5，并与顶部电极层5欧姆接触。

公开(公告)号：US20140166966A1

公开(公告)日：2014-06-19

申请号：US14125254

申请日：2012-06-07

申请人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Koukou Suu

发明人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Koukou Suu

IPC分类号： H01L45/00

CPC分类号： H01L45/1253 ,  G11C11/5614 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/56 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.

摘要翻译： 为了提供不需要成形工艺的电阻变化元件，并且能够降低功耗并且元件的小型化，并提供其制造方法。 根据本发明实施例的电阻变化元件1包括底电极层3，顶电极层5和氧化物半导体层4.氧化物半导体层4具有第一金属氧化物层41和第二金属氧化物层 第一金属氧化物层41形成在底电极层3和顶电极层5之间，并与底电极层3欧姆接触。第二金属氧化物层42形成在第一金属氧化物层41和 顶部电极层5，并与顶部电极层5欧姆接触。

公开(公告)号：US20140102879A1

公开(公告)日：2014-04-17

申请号：US14122966

申请日：2012-06-07

申请人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Youhei Ogawa ,  Koukou Suu

发明人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Youhei Ogawa ,  Koukou Suu

IPC分类号： H01L45/00

CPC分类号： H01L45/1625 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/3492 ,  C23C14/542 ,  C23C14/548 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3429 ,  H01L27/101 ,  H01L45/04 ,  H01L45/146

摘要： [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed.[Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

摘要翻译： 提供一种用于制造可变电阻元件的方法和装置，通过该方法和装置可以精确地形成具有所需电阻率的金属氧化物层。 本发明的实施方式的可变电阻元件的制造方法包括：形成具有第一电阻率的第一金属氧化物和形成具有与第一电阻率不同的第二电阻率的第二金属氧化物的工序的工序; 电阻率。 第一金属氧化物通过溅射形成在基板上，同时溅射由金属氧化物制成的第一靶，以第一功率由金属制成的第二靶。 通过在溅射第一靶的同时以不同于第一功率的第二功率溅射第二靶，在第一金属氧化物层上形成第二金属氧化物层。

公开(公告)号：US08262798B2

公开(公告)日：2012-09-11

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US20100038234A1

公开(公告)日：2010-02-18

申请号：US12519712

申请日：2007-12-17

申请人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

发明人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/34 ,  C23C14/06

CPC分类号： H01L41/083 ,  C23C14/0036 ,  C23C14/088 ,  H01L41/1876 ,  H01L41/316

摘要： A multilayer thin film formation method and a multilayer thin film formation apparatus that improve dielectric characteristics and piezoelectric characteristics of a thin film formed from a lead-based perovskite complex oxide. The multilayer thin film formation method includes formation of a lower electrode layer (32b) containing a noble metal above a substrate (S) by sputtering a lower electrode layer target (TG2), and superposing a lead-based complex oxide layer (33) on the lower electrode layer (32b) by sputtering an oxide layer target (TG3) containing lead. The lower electrode layer (32b) has a thickness restricted to 10 to 30 nm, and the lead-based complex oxide layer (33) has a thickness restricted to 0.2 and 5.0 μm.

摘要翻译： 一种提高由铅系钙钛矿复合氧化物形成的薄膜的介电特性和压电特性的多层薄膜形成方法和多层薄膜形成装置。 多层薄膜形成方法包括通过溅射下电极层靶（TG2），在基底（S）上方形成含有贵金属的下电极层（32b），并将引线基复合氧化物层（33）叠加在 通过溅射含有铅的氧化物层靶（TG3）来形成下电极层（32b）。 下部电极层（32b）的厚度为10〜30nm，铅系复合氧化物层（33）的厚度为0.2〜5.0μm。

公开(公告)号：US20050059246A1

公开(公告)日：2005-03-17

申请号：US10910807

申请日：2004-08-04

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中 该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和 沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动， 在排气路径的次级侧形成较低的空间。

公开(公告)号：US20100314599A1

公开(公告)日：2010-12-16

申请号：US12742602

申请日：2008-11-13

申请人： Shin Kikuchi ,  Yutaka Nishioka ,  Isao Kimura ,  Takehito Jimbo ,  Koukou Suu

发明人： Shin Kikuchi ,  Yutaka Nishioka ,  Isao Kimura ,  Takehito Jimbo ,  Koukou Suu

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： C23C14/046 ,  C23C14/0623 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

摘要： A chalcogenide film of the invention is formed by a sputtering within a contact hole formed in an insulating layer on a substrate, and is made of a chalcogen compound including a melting-point lowering material that lowers a melting point.

摘要翻译： 本发明的硫族化物膜是通过在形成于基板上的绝缘层中的接触孔内的溅射形成的，并且由包含降低熔点的熔点降低材料的硫属化合物构成。