Method of producing a thin film multilayer wiring board
    5.
    发明授权
    Method of producing a thin film multilayer wiring board 失效
    薄膜多层布线板的制造方法

    公开(公告)号:US5393406A

    公开(公告)日:1995-02-28

    申请号:US845942

    申请日:1992-03-04

    摘要: A thin film multilayer wiring board-producing method of the present invention is intended to decrease thermal stresses developing during the formation of the multilayer construction, and also to greatly reduce the number of the steps of the process, as compared with a conventional method. A film material can be used as an insulating film of the multilayer wiring board, and is adhesively bonded to a predetermined portion. Wiring conductors are formed by electroplating. The wiring layers are repeated laminated to form the multilayer construction. A metallic film serving as an electrode is formed on one of upper and lower surfaces of a substrate, the metallic film being removed after a multilayer wiring is formed. A soluble insulating film is formed on a metallic undercoat film on the substrate, and grooves are formed in the soluble insulating film, and wiring conductors are formed in the grooves, using either electroplating or both electroplating and electroless plating. Thereafter, the soluble insulating film and the metallic undercoat film are removed. Subsequently, an insoluble insulating film is formed at those locations from which the soluble insulating film and the metallic undercoat have been removed.

    摘要翻译: 本发明的薄膜多层布线板的制造方法,与以往的方法相比,旨在降低在形成多层结构时的热应力发展,并且大大减少了工艺步骤的数量。 膜材料可以用作多层布线板的绝缘膜,并且粘合到预定部分。 接线导体通过电镀形成。 重复层压布线层以形成多层结构。 用作电极的金属膜形成在基板的上表面和下表面之一上,金属膜在形成多层布线之后被去除。 在基板上的金属底涂层上形成可溶性绝缘膜,并且在可溶性绝缘膜中形成槽,并且使用电镀或电镀或无电镀两者在沟槽中形成布线导体。 然后,除去可溶性绝缘膜和金属底涂膜。 随后,在去除可溶性绝缘膜和金属底涂层的那些位置处形成不溶性绝缘膜。

    Cooling arrangement for semiconductor devices and method of making the
same
    10.
    发明授权
    Cooling arrangement for semiconductor devices and method of making the same 失效
    用于半导体器件的冷却装置及其制造方法

    公开(公告)号:US5133403A

    公开(公告)日:1992-07-28

    申请号:US423386

    申请日:1989-10-19

    摘要: A cooling device for cooling semiconductor elements by removing heat generated from the semiconductor elements such as, for example, semiconductor integrated chips in a large-sized electronic computer. The cooling device is fashioned of a composite AlN-BN sintered material having a Vickers hardness not higher than one-fifth of that of an AlN material, and an anisotropic property of thermal conductivity in a two dimensional direction is higher than that of AlN which is isotropic in thermal conductivity. The cooling device may be mass-produced while nevertheless having a high transfer performance matching the quantity of heat generated for each semiconductor element even if the composite sintered material is uniform in shape and size. The composite sintered material is formed by a mixture of a hexagonal BN powder having an average particle diameter of not less than 1 .mu.m and an AlN powder having an average particle diameter of about 2 .mu.m, with a sintering aid being added and the powdery mixture being subjected to a hot press sintering whereby the sintered material is low in thermal conductivity in a direction parallel to an axis of a shaft of the hot press.

    摘要翻译: 一种用于通过从大型电子计算机中的诸如半导体集成芯片的半导体元件产生的热量来冷却半导体元件的冷却装置。 该冷却装置由维氏硬度不高于AlN材料的五分之一的复合AlN-BN烧结材料制成,并且二维方向的热导率的各向异性特性比AlN的各向异性高 各向同性的导热性。 即使复合烧结体的形状和尺寸一致,冷却装置也可以批量生产,同时具有与每个半导体元件产生的热量匹配的高转印性能。 复合烧结材料由平均粒径不小于1μm的六方晶BN粉末和平均粒径约2μm的AlN粉末的混合物形成,并加入烧结助剂。 混合物进行热压烧结,由此烧结材料在与热压机的轴的轴线平行的方向上的导热性低。