公开(公告)号：US10056344B2

公开(公告)日：2018-08-21

申请号：US15793173

申请日：2017-10-25

申请人： OLYMPUS CORPORATION

发明人： Haruhisa Saito

IPC分类号： H01L23/48 ,  H01L23/00

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/14636 ,  H01L2224/0401 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/11 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16148 ,  H01L2924/00 ,  H01L2924/00014

摘要： A first surface of a first substrate included in a semiconductor device includes a first area in which a plurality of first connecting portions are disposed and a second area in which a plurality of second connecting portions are disposed. A second surface of a second substrate included in the semiconductor device includes a third area in which the plurality of first connecting portions are disposed and a fourth area in which the plurality of second connecting portions are disposed. The second area surrounds the first area on the first surface. The fourth area surrounds the third area on the second surface. A height of the second base electrode in a thickness direction of the first substrate is greater than a height of the first base electrode in the thickness direction.

公开(公告)号：US09478520B2

公开(公告)日：2016-10-25

申请号：US14470448

申请日：2014-08-27

申请人： OLYMPUS CORPORATION

发明人： Mitsuhiro Tsukimura ,  Naohiro Takazawa ,  Yoshiaki Takemoto ,  Hiroshi Kikuchi ,  Haruhisa Saito ,  Yoshitaka Tadaki ,  Yuichi Gomi

IPC分类号： H01L27/146 ,  H01L25/065 ,  H01L31/02 ,  H01L23/528 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/528 ,  H01L24/14 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/1469 ,  H01L31/02016 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06517 ,  H01L2924/13091 ,  H01L2924/00

摘要： A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

摘要翻译： 固态成像装置是固态成像装置，其中形成在第一半导体晶片上的第一基板和形成在第二半导体晶片上的第二基板通过电连接基板的连接而接合，其中第一基板包括光电 转换单元，第二基板包括输出电路，其通过连接器获取由光电转换单元生成的信号并输出​​信号，并且支撑第一和第二接合基板的虚拟连接器进一步布置在基板区域中，其中连接器 不排列在第一基板和第二基板中的至少一个的基板区域中。

公开(公告)号：US20140367853A1

公开(公告)日：2014-12-18

申请号：US14470448

申请日：2014-08-27

申请人： OLYMPUS CORPORATION

发明人： Mitsuhiro Tsukimura ,  Naohiro Takazawa ,  Yoshiaki Takemoto ,  Hiroshi Kikuchi ,  Haruhisa Saito ,  Yoshitaka Tadaki ,  Yuichi Gomi

IPC分类号： H01L25/065 ,  H01L27/146 ,  H01L23/528

CPC分类号： H01L25/0657 ,  H01L23/528 ,  H01L24/14 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/1469 ,  H01L31/02016 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06517 ,  H01L2924/13091 ,  H01L2924/00

摘要： A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

摘要翻译： 固态成像装置是固态成像装置，其中形成在第一半导体晶片上的第一基板和形成在第二半导体晶片上的第二基板通过电连接基板的连接而接合，其中第一基板包括光电 转换单元，第二基板包括输出电路，其通过连接器获取由光电转换单元生成的信号并输出​​信号，并且支撑第一和第二接合基板的虚拟连接器进一步布置在基板区域中，其中连接器 不排列在第一基板和第二基板中的至少一个的基板区域中。

公开(公告)号：US20180323231A1

公开(公告)日：2018-11-08

申请号：US16036347

申请日：2018-07-16

申请人： OLYMPUS CORPORATION

发明人： Haruhisa Saito

IPC分类号： H01L27/146 ,  H04N5/378

CPC分类号： H01L27/14645 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/14 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H04N5/369 ,  H04N5/378

摘要： A solid-state imaging device has a first substrate, a second substrate, and a third substrate. The first substrate has a plurality of first photoelectric conversion elements. The second substrate has a plurality of first through electrodes. The plurality of first photoelectric conversion elements are disposed in a pixel area. The plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area.

公开(公告)号：US20170062506A1

公开(公告)日：2017-03-02

申请号：US15352927

申请日：2016-11-16

申请人： OLYMPUS CORPORATION

发明人： Haruhisa Saito

IPC分类号： H01L27/146 ,  H01L21/306

CPC分类号： H01L27/14643 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/308 ,  H01L25/065 ,  H01L25/0657 ,  H01L25/162 ,  H01L25/167 ,  H01L25/50 ,  H01L27/14 ,  H01L27/146 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/1469

摘要： A semiconductor device having a stacked structure formed by stacking a thinned first silicon substrate and a second silicon substrate supporting the first silicon substrate, wherein the first silicon substrate includes a first surface with a crystal surface orientation of (100) or (110) and a second surface opposite to the first surface, the second silicon substrate includes a third surface and a fourth surface that is opposite to the third surface and from which a silicon surface with a crystal surface orientation (111) is exposed, and wherein the semiconductor device is formed by etching silicon with a predetermined thickness in a direction from the first surface toward the second surface to make the first silicon substrate to be thinned, after bonding the first silicon substrate and the second silicon substrate in a state where the second surface and the third surface facing the second surface are bonded with each other.

摘要翻译： 一种半导体器件，具有通过堆叠薄化的第一硅衬底和支撑第一硅衬底的第二硅衬底而形成的堆叠结构，其中第一硅衬底包括晶体表面取向为（100）或（110）的第一表面和 所述第二硅衬底包括与所述第三表面相对的第三表面和第四表面，并且从所述第二表面露出具有晶体表面取向（111）的硅表面，并且其中所述半导体器件是 通过在从第一表面朝向第二表面的方向上蚀刻具有预定厚度的硅而形成，以使第一硅衬底在第二表面和第三表面的状态下接合第一硅衬底和第二硅衬底之后，使第一硅衬底变薄 面对第二表面的表面彼此接合。

公开(公告)号：US20130181316A1

公开(公告)日：2013-07-18

申请号：US13742952

申请日：2013-01-16

申请人： OLYMPUS CORPORATION

发明人： Mitsuhiro Tsukimura ,  Naohiro Takazawa ,  Yoshiaki Takemoto ,  Hiroshi Kikuchi ,  Haruhisa Saito ,  Yoshitaka Tadaki ,  Yuichi Gomi

IPC分类号： H01L31/02

CPC分类号： H01L25/0657 ,  H01L23/528 ,  H01L24/14 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/1469 ,  H01L31/02016 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06517 ,  H01L2924/13091 ,  H01L2924/00

摘要： A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

摘要翻译： 固态成像装置是固态成像装置，其中形成在第一半导体晶片上的第一基板和形成在第二半导体晶片上的第二基板通过电连接基板的连接而接合，其中第一基板包括光电 转换单元，第二基板包括输出电路，其通过连接器获取由光电转换单元生成的信号并输出​​信号，并且支撑第一和第二接合基板的虚拟连接器进一步布置在基板区域中，其中连接器 不排列在第一基板和第二基板中的至少一个的基板区域中。

公开(公告)号：US20180047694A1

公开(公告)日：2018-02-15

申请号：US15793173

申请日：2017-10-25

申请人： OLYMPUS CORPORATION

发明人： Haruhisa Saito

IPC分类号： H01L23/00 ,  H01L25/07 ,  H01L21/768 ,  H01L27/146

CPC分类号： H01L24/11 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L27/14636 ,  H01L2224/0401 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/11 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16148 ,  H01L2924/00 ,  H01L2924/00014

摘要： A first surface of a first substrate included in a semiconductor device includes a first area in which a plurality of first connecting portions are disposed and a second area in which a plurality of second connecting portions are disposed. A second surface of a second substrate included in the semiconductor device includes a third area in which the plurality of first connecting portions are disposed and a fourth area in which the plurality of second connecting portions are disposed. The second area surrounds the first area on the first surface. The fourth area surrounds the third area on the second surface. A height of the second base electrode in a thickness direction of the first substrate is greater than a height of the first base electrode in the thickness direction.

公开(公告)号：US09230884B2

公开(公告)日：2016-01-05

申请号：US13846249

申请日：2013-03-18

申请人： OLYMPUS CORPORATION

发明人： Yoshiaki Takemoto ,  Haruhisa Saito ,  Hiroshi Kikuchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H05K1/02 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/48 ,  H01L23/3142 ,  H01L24/05 ,  H01L24/80 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/06181 ,  H01L2224/08146 ,  H01L2224/08148 ,  H01L2224/80013 ,  H01L2224/80203 ,  H01L2224/80895 ,  H01L2224/82365 ,  H01L2224/83104 ,  H01L2224/83365 ,  H01L2224/9212 ,  H01L2224/94 ,  H05K1/02 ,  H01L2924/00014 ,  H01L2224/80 ,  H01L2224/83

摘要： A substrate may include: a base material having a predetermined thickness; an electrode section formed on one side surface in a thickness direction of the base material, and having a plurality of electrodes; and a concave section formed on at least a part of the surface on which the electrode section is formed, on the base material.

摘要翻译： 基材可以包括：具有预定厚度的基材; 电极部，形成在所述基材的厚度方向的一个侧面上，具有多个电极; 以及形成在形成有电极部的表面的至少一部分上的凹部。

公开(公告)号：US20150357300A1

公开(公告)日：2015-12-10

申请号：US14823482

申请日：2015-08-11

申请人： OLYMPUS CORPORATION

发明人： Haruhisa Saito ,  Yoshitaka Tadaki ,  Chihiro Migita

IPC分类号： H01L23/00 ,  H01L27/146

CPC分类号： H01L24/13 ,  H01L21/563 ,  H01L24/05 ,  H01L24/11 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L27/14636 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/05096 ,  H01L2224/05098 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05568 ,  H01L2224/05571 ,  H01L2224/05576 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11622 ,  H01L2224/11826 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13013 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13551 ,  H01L2224/13552 ,  H01L2224/1356 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/13566 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2224/13669 ,  H01L2224/13684 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/8109 ,  H01L2224/81092 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/8138 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81469 ,  H01L2224/81484 ,  H01L2224/81903 ,  H01L2224/831 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01074 ,  H01L2224/11825 ,  H01L2924/014

摘要： A semiconductor substrate includes a semiconductor substrate body in which a wiring is formed and a bonding electrode provided to protrude from a first surface of the semiconductor substrate body. The bonding electrode comprises a composite including a first metal portion which is provided to protrude from the first surface of the semiconductor substrate body and of which a base end portion in a protrusion direction is electrically connected to the wiring, and a second metal portion which is formed of a second metal which has lower hardness than first metal of which the first metal portion is formed and which is provided to be bonded to the first metal portion in a range equal to or less than a protrusion height of the first metal portion, the first metal portion is formed on the second metal portion by sputtering or evaporation the first metal.

摘要翻译： 半导体衬底包括其中形成布线的半导体衬底体和设置成从半导体衬底本体的第一表面突出的接合电极。 所述接合电极包括复合体，所述复合体包括第一金属部分，所述第一金属部分设置成从所述半导体基板本体的所述第一表面突出并且其突出方向上的基端部电连接到所述布线;以及第二金属部分， 由比形成有第一金属部的第一金属低的第二金属形成，并且设置成在第一金属部的突出高度以下的范围内与第一金属部接合， 通过溅射或蒸发第一金属，在第二金属部分上形成第一金属部分。

公开(公告)号：US20150270304A1

公开(公告)日：2015-09-24

申请号：US14734240

申请日：2015-06-09

申请人： OLYMPUS CORPORATION

发明人： Haruhisa Saito

IPC分类号： H01L27/146 ,  H01L25/065 ,  H01L21/78 ,  H01L23/00 ,  H01L25/00

CPC分类号： H01L27/14634 ,  H01L21/48 ,  H01L21/50 ,  H01L21/78 ,  H01L23/48 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/14636 ,  H01L27/1469 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/08112 ,  H01L2224/08135 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11472 ,  H01L2224/1148 ,  H01L2224/1184 ,  H01L2224/13013 ,  H01L2224/13017 ,  H01L2224/13082 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/1411 ,  H01L2224/16057 ,  H01L2224/16106 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/8012 ,  H01L2224/81193 ,  H01L2224/83193 ,  H01L2224/83194 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2924/12042 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device manufacturing method includes a wafer stack manufacturing process and a dicing process. The wafer stack manufacturing process includes: a first wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature higher than a glass transition point of the resin film, manufacturing first holes extending from a surface of the resin film to wirings of the circuits, and providing electrodes electrically connected to the wirings in the first holes to form a first wafer; a second wafer manufacturing process of manufacturing a resin film covering circuits and heated to a temperature lower than a glass transition point of the resin film, manufacturing second holes extending from a surface of the resin film to wirings of the circuits, and providing the electrodes electrically connected to the wirings in the second holes to form a second wafer; and a wafer bonding process.

摘要翻译： 半导体器件制造方法包括晶片堆叠制造工艺和切割工艺。 晶片堆栈制造工艺包括：制造树脂膜覆盖电路并被加热到高于树脂膜的玻璃化转变点的温度的第一晶片制造工艺，制造从树脂膜的表面延伸到第一孔的布线 并且提供与第一孔中的布线电连接以形成第一晶片的电极; 制造树脂膜覆盖电路并被加热到低于树脂膜的玻璃化转变点的温度的第二晶片制造工艺，制造从树脂膜的表面延伸到电路的布线的第二孔，并且将电极提供电 连接到第二孔中的布线以形成第二晶片; 和晶圆接合工艺。