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16 条记录 (耗时 0.029 秒)

    Tuneable ferroelectric decoupling capacitor
    3.
    发明授权
    Tuneable ferroelectric decoupling capacitor 有权
    可调铁电去耦电容器

    公开(公告)号：US06507476B1

    公开(公告)日：2003-01-14

    申请号：US09430901

    申请日：1999-11-01

    申请人： Thomas M. Shaw ,  W. David Pricer ,  Deborah A. Neumayer ,  John D. Baniecki ,  Robert B. Laibowitz

    发明人： Thomas M. Shaw ,  W. David Pricer ,  Deborah A. Neumayer ,  John D. Baniecki ,  Robert B. Laibowitz

    IPC分类号： H01G400

    CPC分类号： H01L27/0805 ,  H01L28/55

    摘要： A method for configuring a bypass capacitor for use in conjunction with an integrated circuit device is disclosed. In an exemplary embodiment of the invention, the method includes selecting mechanical dimensions for the bypass capacitor, the mechanical dimensions causing the bypass capacitor to exhibit electrical losses at a clock frequency of the integrated circuit device. The bypass capacitor preferably includes a ferroelectric dielectric material. In addition, the selection of mechanical dimensions for the bypass capacitor determines a mechanical resonance frequency for the bypass capacitor, with the mechanical resonance frequency corresponding to the clock frequency.

    摘要翻译： 公开了一种用于配置与集成电路器件一起使用的旁路电容器的方法。 在本发明的示例性实施例中，该方法包括选择旁路电容器的机械尺寸，使得旁路电容器在集成电路器件的时钟频率处呈现电损耗的机械尺寸。 旁路电容器优选地包括铁电介质材料。 另外，旁路电容器的机械尺寸的选择决定了旁路电容器的机械共振频率，机械共振频率对应于时钟频率。

    Gated structure for controlling fluctuations in mesoscopic structures
    6.
    发明授权
    Gated structure for controlling fluctuations in mesoscopic structures 失效
    用于控制介观结构波动的门控结构

    公开(公告)号：US4982248A

    公开(公告)日：1991-01-01

    申请号：US295727

    申请日：1989-01-11

    申请人： Robert B. Laibowitz ,  Corwin P. Umbach

    发明人： Robert B. Laibowitz ,  Corwin P. Umbach

    IPC分类号： H01L29/78 ,  H01L29/772

    CPC分类号： H01L29/772

    摘要： A new solid state device based on mesoscopic phenomena is described. A structure of the mesoscopic device includes phase altering scattering sites at various energy levels disposed in proximity to a conductive channel. The carries in the channel, being isolated by a potential barrier, are not in substantial scattering interaction with the phase altering scattering sites in the absence of a sufficiently large voltage at the gate of the mesoscopic device. Increasing the potential at the gate, imposes a localized electric field along the channel, increases the energy levels of the carriers in the channel, and allows the carriers to interact with the phase altering scattering sites, thereby controllably varying the conductance of the channel.

    Gas treatment of thin film structures with catalytic action
    7.
    发明授权
    Gas treatment of thin film structures with catalytic action 失效
    具有催化作用的薄膜结构气体处理

    公开(公告)号：US06815343B2

    公开(公告)日：2004-11-09

    申请号：US10334178

    申请日：2002-12-30

    申请人： John D. Baniecki ,  Robert B. Laibowitz ,  Christopher C. Parks ,  Thomas M. Shaw

    发明人： John D. Baniecki ,  Robert B. Laibowitz ,  Christopher C. Parks ,  Thomas M. Shaw

    IPC分类号： H01L2144

    CPC分类号： H01L21/3003 ,  H01L21/28185 ,  H01L21/324 ,  H01L29/513

    摘要： A method of substantially reducing and/or eliminating the amount of defects and/or impurities that amass at interfacial surfaces that are present in a multilayer structure is provided. Specifically, the method improves the efficiency of a forming gas anneal by providing a multilayer structure having a catalytic layer formed thereon or buried therein which allows for a significant increase in the amount of hydrogen or deuterium which can be incorporated into the structure. The method is also conducted at a low temperature (on the order of about 400° C. or less). Multilayer structures are also provided which include an annealed multilayer structure having at least one interfacial surface present therein. The at least one material interface contains a region of hydrogen or deuterium which substantially reduces defects and impurities present at the at least one interface.

    Thin-film field-effect transistor with organic semiconductor requiring low operating voltages
    8.
    发明授权
    Thin-film field-effect transistor with organic semiconductor requiring low operating voltages 有权
    具有需要低工作电压的有机半导体的薄膜场效应晶体管

    公开(公告)号：US06344660B1

    公开(公告)日：2002-02-05

    申请号：US09323804

    申请日：1999-06-02

    申请人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    发明人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    IPC分类号： H01L3524

    CPC分类号： H01L51/0525 ,  H01L21/31691 ,  H01L51/0052 ,  H01L51/0545

    摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

    摘要翻译： 一种基于有机半导体材料的薄膜晶体管（TFT）器件结构，其在比现有技术的有机TFT器件的当前状态更低的工作电压下表现出高场效应迁移率，高电流调制和低子阈值斜率。 该结构包括合适的衬底，其具有以下特征序列：一组覆盖有高介电常数绝缘体的导电栅极电极，有机半导体层，对应于每条栅极线的导电源极和漏极电极组 ，以及可以覆盖和保护器件结构的可选钝化层。 使用高介电常数栅极绝缘体利用有机半导体的意想不到的栅极电压依赖性，以在非常低的工作电压下实现高场效应迁移率水平。 教导了将这种绝缘体材料的选择和将其集成到TFT结构中的手段的合理组合，这将使得能够容易地在玻璃或塑料基板上制造以及在平板显示器应用中使用这种装置。

    Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
    10.
    发明授权
    Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric 失效
    包括有机半导体和化学溶液沉积的金属氧化物栅极电介质的薄膜效应晶体管的制造

    公开(公告)号：US5946551A

    公开(公告)日：1999-08-31

    申请号：US827015

    申请日：1997-03-25

    申请人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    发明人： Christos Dimitrios Dimitrakopoulos ,  Peter Richard Duncombe ,  Bruce K. Furman ,  Robert B. Laibowitz ,  Deborah Ann Neumayer ,  Sampath Purushothaman

    IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

    CPC分类号： H01L21/31691 ,  H01L51/0525 ,  H01L51/0052 ,  H01L51/0545

    摘要： A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. A fabrication process for the same, especially a process for deposition of the gate insulator using chemical solutions. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this insulator material and the means to integrate it into the TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.

    摘要翻译： 一种基于有机半导体材料的薄膜晶体管（TFT）器件结构，其在比现有技术的有机TFT器件的当前状态更低的工作电压下表现出高场效应迁移率，高电流调制和低子阈值斜率。 其制造方法，特别是使用化学溶液沉积栅极绝缘体的工艺。 该结构包括以下列顺序排列的合适的衬底：一组由高介电常数绝缘体覆盖的导电栅极电极，有机半导体层，对应于每条栅极线的一组导电源极和漏极电极 ，以及可以覆盖和保护器件结构的可选钝化层。 使用高介电常数栅极绝缘体利用有机半导体的意想不到的栅极电压依赖性，以在非常低的工作电压下实现高场效应迁移率水平。 教导了将这种绝缘体材料的选择和将其集成到TFT结构中的手段的合理组合，这将使得能够容易地在玻璃或塑料基板上制造以及在平板显示器应用中使用这种装置。