公开(公告)号：US20060159916A1

公开(公告)日：2006-07-20

申请号：US10840794

申请日：2004-05-05

申请人： Robert Dubrow ,  Robert Daniels ,  J. Parce ,  Matthew Murphy ,  Jim Hamilton ,  Erik Scher ,  Dave Stumbo ,  Chunming Niu ,  Linda Romano ,  Jay Goldman ,  Vijendra Sahi ,  Jeffery Whiteford

发明人： Robert Dubrow ,  Robert Daniels ,  J. Parce ,  Matthew Murphy ,  Jim Hamilton ,  Erik Scher ,  Dave Stumbo ,  Chunming Niu ,  Linda Romano ,  Jay Goldman ,  Vijendra Sahi ,  Jeffery Whiteford

IPC分类号： B32B19/00 ,  D02G3/00 ,  B32B9/00

CPC分类号： B01J20/281 ,  A61L2400/12 ,  A61M1/1698 ,  B01J20/28007 ,  B01J20/28057 ,  B01J20/3204 ,  B01J20/321 ,  B01J20/3212 ,  B01J20/3219 ,  B01J20/3234 ,  B01J20/3236 ,  B01J20/3246 ,  B01J20/3265 ,  B01J20/327 ,  B01J20/3272 ,  B01J20/3274 ,  B01J20/3289 ,  B01J20/3291 ,  B01L3/5027 ,  B01L2200/16 ,  B01L2300/0636 ,  B01L2300/0681 ,  B01L2300/069 ,  B01L2300/161 ,  B01L2400/0406 ,  B82Y30/00 ,  F28D15/046 ,  F28F2245/02 ,  F28F2245/04 ,  G01N30/92 ,  G01N33/54346 ,  G01N33/54393 ,  H01J49/0418 ,  Y10S977/762 ,  Y10S977/764 ,  Y10S977/773 ,  Y10S977/813 ,  Y10S977/904 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2915 ,  Y10T428/2918 ,  Y10T428/292 ,  Y10T428/2929 ,  Y10T428/298

摘要： This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.

公开(公告)号：US20070228439A1

公开(公告)日：2007-10-04

申请号：US11760382

申请日：2007-06-08

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/786

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20060211183A1

公开(公告)日：2006-09-21

申请号：US11405864

申请日：2006-04-18

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20050181587A1

公开(公告)日：2005-08-18

申请号：US11106340

申请日：2005-04-13

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L21/336 ,  H01L21/38 ,  H01L29/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20070012980A1

公开(公告)日：2007-01-18

申请号：US11490637

申请日：2006-07-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20070120167A1

公开(公告)日：2007-05-31

申请号：US11602783

申请日：2006-11-21

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/94

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20060151820A1

公开(公告)日：2006-07-13

申请号：US11341711

申请日：2006-01-30

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20050110064A1

公开(公告)日：2005-05-26

申请号：US11004380

申请日：2004-12-03

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： G11C13/02 ,  H01L21/336 ,  H01L21/38 ,  H01L21/77 ,  H01L21/8234 ,  H01L27/108 ,  H01L29/04 ,  H01L29/06 ,  H01L29/76 ,  H01L29/786 ,  H01L29/94 ,  H01L31/119 ,  H01L33/20 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US20050079659A1

公开(公告)日：2005-04-14

申请号：US10674060

申请日：2003-09-30

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Parce ,  Jay Goldman

IPC分类号： G11C13/02 ,  H01L21/336 ,  H01L21/38 ,  H01L21/77 ,  H01L21/8234 ,  H01L27/108 ,  H01L29/04 ,  H01L29/06 ,  H01L29/76 ,  H01L29/786 ,  H01L29/94 ,  H01L31/119 ,  H01L33/20 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20060068154A1

公开(公告)日：2006-03-30

申请号：US11034216

申请日：2005-01-13

申请人： J. Parce ,  Jian Chen ,  Robert Dubrow ,  William Freeman ,  Erik Scher ,  Jeffery Whiteford

发明人： J. Parce ,  Jian Chen ,  Robert Dubrow ,  William Freeman ,  Erik Scher ,  Jeffery Whiteford

IPC分类号： B32B1/04

CPC分类号： C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  C08K3/30 ,  C09D5/00 ,  C09D7/61 ,  C09D7/67 ,  C09D11/037 ,  C09K11/565 ,  C09K11/883 ,  G02B1/11 ,  G02B3/00 ,  G02B3/0006 ,  G02B5/08 ,  H01L33/502 ,  H01L33/504 ,  H01L33/56 ,  H05B33/145 ,  Y10S977/715 ,  Y10S977/753 ,  Y10S977/834 ,  Y10T428/23 ,  Y10T428/239

摘要： The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.

摘要翻译： 本发明提供掺杂有半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 本发明还提供了用于生产包含半导体纳米晶体的基质的方法。