公开(公告)号：US20060159916A1

公开(公告)日：2006-07-20

申请号：US10840794

申请日：2004-05-05

申请人： Robert Dubrow ,  Robert Daniels ,  J. Parce ,  Matthew Murphy ,  Jim Hamilton ,  Erik Scher ,  Dave Stumbo ,  Chunming Niu ,  Linda Romano ,  Jay Goldman ,  Vijendra Sahi ,  Jeffery Whiteford

发明人： Robert Dubrow ,  Robert Daniels ,  J. Parce ,  Matthew Murphy ,  Jim Hamilton ,  Erik Scher ,  Dave Stumbo ,  Chunming Niu ,  Linda Romano ,  Jay Goldman ,  Vijendra Sahi ,  Jeffery Whiteford

IPC分类号： B32B19/00 ,  D02G3/00 ,  B32B9/00

CPC分类号： B01J20/281 ,  A61L2400/12 ,  A61M1/1698 ,  B01J20/28007 ,  B01J20/28057 ,  B01J20/3204 ,  B01J20/321 ,  B01J20/3212 ,  B01J20/3219 ,  B01J20/3234 ,  B01J20/3236 ,  B01J20/3246 ,  B01J20/3265 ,  B01J20/327 ,  B01J20/3272 ,  B01J20/3274 ,  B01J20/3289 ,  B01J20/3291 ,  B01L3/5027 ,  B01L2200/16 ,  B01L2300/0636 ,  B01L2300/0681 ,  B01L2300/069 ,  B01L2300/161 ,  B01L2400/0406 ,  B82Y30/00 ,  F28D15/046 ,  F28F2245/02 ,  F28F2245/04 ,  G01N30/92 ,  G01N33/54346 ,  G01N33/54393 ,  H01J49/0418 ,  Y10S977/762 ,  Y10S977/764 ,  Y10S977/773 ,  Y10S977/813 ,  Y10S977/904 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2915 ,  Y10T428/2918 ,  Y10T428/292 ,  Y10T428/2929 ,  Y10T428/298

摘要： This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.

公开(公告)号：US20080041814A1

公开(公告)日：2008-02-21

申请号：US11839778

申请日：2007-08-16

申请人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

发明人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

IPC分类号： B32B9/00 ,  H01B13/00

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US20060008942A1

公开(公告)日：2006-01-12

申请号：US11117707

申请日：2005-04-29

申请人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

发明人： Linda Romano ,  Jian Chen ,  Xiangfeng Duan ,  Robert Dubrow ,  Stephen Empedocles ,  Jay Goldman ,  James Hamilton ,  David Heald ,  Francesco Lemmi ,  Chunming Niu ,  Yaoling Pan ,  George Pontis ,  Vijendra Sahi ,  Erik Scher ,  David Stumbo ,  Jeffery Whiteford

IPC分类号： H01L51/40 ,  H01L21/31 ,  H01L21/20 ,  H01L21/336 ,  B29C47/00 ,  D01F9/12 ,  H01L21/00 ,  D02G3/00

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

摘要翻译： 本发明涉及收获，整合和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供了收获纳米线的方法，其包括选择性地蚀刻放置在纳米线生长衬底上以去除纳米线的牺牲层。 本发明还提供了将纳米线整合到电子器件中的方法，包括将圆筒的外表面与纳米线的流体悬浮液接触并滚动纳米线涂覆的圆筒以将纳米线沉积到表面上。 还提供了使用喷墨打印机或孔径以纳米线排列纳米线的方法。 本发明的另外的方面提供了用于防止基于纳米线的晶体管中的栅极短路的方法。 提供了收获和集成纳米线的其他方法。

公开(公告)号：US20080038520A1

公开(公告)日：2008-02-14

申请号：US11641939

申请日：2006-12-20

申请人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  David Stumbo ,  Alice Fischer-Colbrie ,  Vijendra Sahi ,  Virginia Robbins

发明人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  David Stumbo ,  Alice Fischer-Colbrie ,  Vijendra Sahi ,  Virginia Robbins

IPC分类号： B32B15/02 ,  B05D5/12

CPC分类号： C30B29/605 ,  B82Y30/00 ,  C30B11/12 ,  C30B29/06 ,  Y10T428/24917

摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

公开(公告)号：US20060255481A1

公开(公告)日：2006-11-16

申请号：US11490636

申请日：2006-07-21

申请人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  Dave Stumbo

发明人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  Dave Stumbo

IPC分类号： H01L21/20 ,  H01L21/31 ,  H01L21/00

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7854 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/891 ,  H01L2924/00

摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

公开(公告)号：US20060019472A1

公开(公告)日：2006-01-26

申请号：US11117703

申请日：2005-04-29

申请人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  Dave Stumbo

发明人： Yaoling Pan ,  Xiangfeng Duan ,  Robert Dubrow ,  Jay Goldman ,  Shahriar Mostarshed ,  Chunming Niu ,  Linda Romano ,  Dave Stumbo

IPC分类号： H01L21/20 ,  H01L21/4763

CPC分类号： H01L29/0673 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/18 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/60 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/7854 ,  H01L2924/0002 ,  Y10S438/962 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/843 ,  Y10S977/891 ,  H01L2924/00

摘要： The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

摘要翻译： 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施方案中，提供了纳米线生长和掺杂的方法，包括使用硅前体的组合的用于外延取向的纳米线生长的方法。 在本发明的另一方面，提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面，提供了将纳米线从一个衬底转移到另一个衬底的方法。

公开(公告)号：US20060068154A1

公开(公告)日：2006-03-30

申请号：US11034216

申请日：2005-01-13

申请人： J. Parce ,  Jian Chen ,  Robert Dubrow ,  William Freeman ,  Erik Scher ,  Jeffery Whiteford

发明人： J. Parce ,  Jian Chen ,  Robert Dubrow ,  William Freeman ,  Erik Scher ,  Jeffery Whiteford

IPC分类号： B32B1/04

CPC分类号： C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  C08K3/30 ,  C09D5/00 ,  C09D7/61 ,  C09D7/67 ,  C09D11/037 ,  C09K11/565 ,  C09K11/883 ,  G02B1/11 ,  G02B3/00 ,  G02B3/0006 ,  G02B5/08 ,  H01L33/502 ,  H01L33/504 ,  H01L33/56 ,  H05B33/145 ,  Y10S977/715 ,  Y10S977/753 ,  Y10S977/834 ,  Y10T428/23 ,  Y10T428/239

摘要： The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.

摘要翻译： 本发明提供掺杂有半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 本发明还提供了用于生产包含半导体纳米晶体的基质的方法。

公开(公告)号：US20080020235A1

公开(公告)日：2008-01-24

申请号：US11593918

申请日：2006-11-07

申请人： J. Parce ,  Jian Chen ,  Robert Dubrow ,  William Freeman ,  Erik Scher ,  Jeffery Whiteford

发明人： J. Parce ,  Jian Chen ,  Robert Dubrow ,  William Freeman ,  Erik Scher ,  Jeffery Whiteford

IPC分类号： B32B9/00

CPC分类号： C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  C08K3/30 ,  C09D5/00 ,  C09D7/61 ,  C09D7/67 ,  C09D11/037 ,  C09K11/565 ,  C09K11/883 ,  G02B1/11 ,  G02B3/00 ,  G02B3/0006 ,  G02B5/08 ,  H01L33/502 ,  H01L33/504 ,  H01L33/56 ,  H05B33/145 ,  Y10S977/715 ,  Y10S977/753 ,  Y10S977/834 ,  Y10T428/23 ,  Y10T428/239

摘要： The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.

公开(公告)号：US20060204738A1

公开(公告)日：2006-09-14

申请号：US11330722

申请日：2006-01-12

申请人： Robert Dubrow ,  Lawrence Bock ,  R. Daniels ,  Veeral Hardev ,  Chunming Niu ,  Vijendra Sahi

发明人： Robert Dubrow ,  Lawrence Bock ,  R. Daniels ,  Veeral Hardev ,  Chunming Niu ,  Vijendra Sahi

IPC分类号： D04H13/00

CPC分类号： A61L31/10 ,  A61F13/02 ,  A61L27/34 ,  A61L2400/12 ,  A61L2420/04 ,  A61N1/05 ,  B82Y30/00 ,  Y10S977/762 ,  Y10S977/764 ,  Y10S977/773 ,  Y10S977/811 ,  Y10S977/813 ,  Y10S977/90 ,  Y10S977/904 ,  Y10S977/906 ,  Y10T428/12111 ,  Y10T428/249924 ,  Y10T428/29

摘要： This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates for use in various medical devices, as well as methods and uses for such substrates and medical devices. In one particular embodiment, methods for enhancing cellular functions on a surface of a medical device implant are disclosed which generally comprise providing a medical device implant comprising a plurality of nanofibers (e.g., nanowires) thereon and exposing the medical device implant to cells such as osteoblasts.

公开(公告)号：US20070034833A1

公开(公告)日：2007-02-15

申请号：US11492717

申请日：2006-07-24

申请人： J. Parce ,  Paul Bernatis ,  Robert Dubrow ,  William Freeman ,  Joel Gamoras ,  Shihai Kan ,  Andreas Meisel ,  Baixin Qian ,  Jeffery Whiteford ,  Jonathan Ziebarth

发明人： J. Parce ,  Paul Bernatis ,  Robert Dubrow ,  William Freeman ,  Joel Gamoras ,  Shihai Kan ,  Andreas Meisel ,  Baixin Qian ,  Jeffery Whiteford ,  Jonathan Ziebarth

IPC分类号： C09K11/02

CPC分类号： C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  C01B19/007 ,  C01G9/08 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2004/84 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  G02B1/11 ,  G02B3/0087 ,  G02B2207/101 ,  H01L33/502 ,  Y10S977/783

摘要： Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

摘要翻译： 提供掺杂半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 还提供了用于生产包含半导体纳米晶体的基质的方法。 还描述了具有高量子效率，小尺寸和/或窄尺寸分布的纳米结构，以及生产具有II-VI族壳的磷化铟纳米结构和核 - 壳纳米结构的方法。