BOOTING METHOD OF COMPUTING SYSTEM INCLUDING MEMORY MODULE WITH PROCESSING DEVICE MOUNTED

    公开(公告)号:US20210349730A1

    公开(公告)日:2021-11-11

    申请号:US17115924

    申请日:2020-12-09

    IPC分类号: G06F9/4401 G06N20/00

    摘要: A booting method of a computing system, which includes a memory module including a processing device connected to a plurality of memory devices, including: powering up the computing system; after powering up the computing system, performing first memory training on the plurality of memory devices by the processing device in the memory module, and generating a module ready signal indicating completion of the first memory training; after powering up the computing system, performing a first booting sequence by a host device, the host device executing basic input/output system (BIOS) code of a BIOS memory included in the computing system; waiting for the module ready signal to be received from the memory module in the host device after performing the first booting sequence; and receiving the module ready signal in the host device, and performing a second booting sequence based on the module ready signal.

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    4.
    发明公开

    公开(公告)号:US20240063018A1

    公开(公告)日:2024-02-22

    申请号:US18366470

    申请日:2023-08-07

    摘要: A method of fabricating a semiconductor device, includes forming a dielectric layer on a substrate; forming a hard mask layer on the dielectric layer; forming mandrel lines on the hard mask layer, each of the mandrel lines extending in a first direction; forming spacers on both sidewalls of each of mandrel lines; removing the plurality of mandrel lines from the spacers; forming a first linear opening corresponding to a first region of a space between adjacent ones of the spacers, in the hard mask layer; forming a second linear opening corresponding to a second region of the space between the adjacent ones, the second linear opening being adjacent to the first linear opening in the first direction; forming trenches in the dielectric layer using the hard mask layer; and interconnection lines by filling the trenches with a conductive material.

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220399331A1

    公开(公告)日:2022-12-15

    申请号:US17561867

    申请日:2021-12-24

    摘要: A semiconductor integrated circuit device including a substrate with a first element region of a P type and a second element region of an N type, a channel active region that extends in the first element region or the second element region, the channel active region including a plurality of channels, a plurality of gate lines that extend in a second direction intersecting and include a gate metal layer, and a gate insulating film in contact with the gate metal layer, a plurality of first spacers on opposite side portions of respective ones of the gate lines, and a plurality of source/drain regions that are between ones of the plurality of gate lines. The channel active region includes a first channel directly on the substrate, and a second channel spaced apart from the first channel and extends into the gate metal layer.

    MEMORY EXPANDER AND COMPUTING SYSTEM INCLUDING THE SAME

    公开(公告)号:US20240211424A1

    公开(公告)日:2024-06-27

    申请号:US18448701

    申请日:2023-08-11

    IPC分类号: G06F13/40 G06F11/07 G11C5/14

    摘要: A memory expander includes memory sub-modules, power management integrated circuits, a controller, and a power controller. The memory sub-modules store data, and each of the memory sub-modules includes one or more memories. The power management integrated circuits independently supply powers to the memory sub-modules, respectively. The controller communicates with an external device through an interface (e.g., compute express link (CXL)), controls operations of the memory sub-modules, and checks whether the memory sub-modules are abnormal. The power controller controls operations of the power management integrated circuits. In response to a first memory sub-module becoming abnormal, the power controller controls a first power management integrated circuit to block a first power supplied to the first memory sub-module.