公开(公告)号：US10541350B2

公开(公告)日：2020-01-21

申请号：US15985236

申请日：2018-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon Yoon ,  Jae In Sim ,  Tae Hun Kim ,  Gi Bum Kim

IPC: H01L33/10 ,  H01L33/38 ,  H01L33/50

Abstract: A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.

公开(公告)号：US10177278B2

公开(公告)日：2019-01-08

申请号：US15437970

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hyun Kim ,  Jae Ryung Yoo ,  Gi Bum Kim ,  Ha Yeong Son ,  Sang Seok Lee

IPC: H01L33/48 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.

公开(公告)号：US10756238B2

公开(公告)日：2020-08-25

申请号：US16234800

申请日：2018-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon Yoon ,  Gi Bum Kim

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/42 ,  H01L33/32

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer, and a reflective electrode structure on the transparent electrode layer that includes a light-transmitting insulating layer on the transparent electrode layer with insulating patterns, portions of sides of the insulating patterns being open, and a contact region of the transparent electrode layer being defined by a region between the insulating patterns, air gaps between the transparent electrode layer and the insulating patterns, the air gaps extending in the open portions of the sides of the insulating patterns, and a reflective electrode layer on the insulating patterns to cover the open portions of the insulating patterns, the reflective electrode layer being connected to the contact region of the transparent electrode layer.

公开(公告)号：US09099624B2

公开(公告)日：2015-08-04

申请号：US13677072

申请日：2012-11-14

Applicant: Samsung Electronics Co., Ltd

Inventor： Wan Ho Lee ,  Gi Bum Kim ,  Si Hyuk Lee

IPC: H01L33/58 ,  H01L33/44

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.

Abstract translation: 包含其的半导体发光器件和封装包括：包括第一导电型半导体层，有源层和第二导电类型半导体层的发光结构。 光提取层设置在发光结构上，并且包括具有透光性的透光薄膜层，包括设置在透光薄膜层上的纳米棒的纳米棒层和纳米线层，纳米线层包括 纳米线布置在纳米棒层上。

公开(公告)号：US09570660B2

公开(公告)日：2017-02-14

申请号：US14799675

申请日：2015-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In Sim ,  Sang Yeob Song ,  Jong Hoon Ha ,  Gi Bum Kim ,  Seung Woo Choi

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。

公开(公告)号：US09048343B2

公开(公告)日：2015-06-02

申请号：US13762983

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Gi Bum Kim ,  Yu Seung Kim ,  Seung Woo Choi ,  Gyeong Seon Park ,  Shi Young Lee

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Abstract translation: 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。

公开(公告)号：US10074773B2

公开(公告)日：2018-09-11

申请号：US15671275

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In Sim ,  Ju Heon Yoon ,  Gi Bum Kim ,  Ji Hye Lee

IPC: H01L33/36 ,  H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/38 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L33/007 ,  H01L33/38 ,  H01L33/42 ,  H01L33/486 ,  H01L33/60 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/13101 ,  H01L2224/16245 ,  H01L2933/0016 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.